Jean-Louis LAZZARI

103

Documents

Publications

	Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates M. Sebai , I. Trabelsi , G. Bousselmi , J.-L. Lazzari , M. Kanzari Physica B: Condensed Matter, 2023, 653, pp.414670. ⟨10.1016/j.physb.2023.414670⟩ Article dans une revue hal-04311451v1
	Preparation and characterization of Cu2ZnxFe1−xSnS4 thin ‎films deposited on intrinsic silicon substrates Marwa Sebai , Ghada Bousselmi , Jean-Louis Lazzari , Mounir Kanzari Materials Today Communications, 2023, 35, pp.105558. ⟨10.1016/j.mtcomm.2023.105558⟩ Article dans une revue hal-04311472v1
	Study of n-WO3/p-porous silicon structures for gas-sensing applications H. Mhamdi , R. Benabderrahmane Zaghouani , T. Fiorido , J.-L. Lazzari , Marc Bendahan Journal of Materials Science: Materials in Electronics, 2020, 31 (10), pp.7862-7870. ⟨10.1007/s10854-020-03324-8⟩ Article dans une revue hal-02867069v1
	Energy band gap tuning in Te-doped WS2/WSe2 heterostructures Anna Krivosheeva , Victor Shaposhnikov , Victor Borisenko , J.-L. Lazzari Journal of Materials Science, 2020, 55 (23), pp.9695-9702. ⟨10.1007/s10853-020-04485-x⟩ Article dans une revue hal-03156173v1
	Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction H. Saidi , C. Ben Alaya , M.F. Boujmil , B. Durand , J.L. Lazzari Current Applied Physics, 2020, 20 (1), pp.29-36. ⟨10.1016/j.cap.2019.09.015⟩ Article dans une revue hal-02414308v1
	Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector N Sfina , I Ammar , J.-L. Lazzari , M Said Physica Scripta, 2020, 96 (3), pp.035802. ⟨10.1088/1402-4896/abd49a⟩ Article dans une revue hal-03144158v1
	Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position A. Krivosheeva , V. Shaposhnikov , V. e. Borisenko , J.-L. Lazzari International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩ Article dans une revue hal-03144479v1
	Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure N Sfina , A. Jbeli , Jean-Louis Lazzari , M. Saïd Recent Advances in Photonics and Optics, 2019, ⟨10.36959/665/321⟩ Article dans une revue hal-02414543v1
	Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure N. Sfina , A. Jbeli , J.-L. Lazzari , M. Said Recent Advances in Photonics and Optics, 2019, 2 (1), pp.40-49. ⟨10.36959/665/321⟩ Article dans une revue hal-03141584v1
	Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction H. Saïdi , C. Ben Alaya , M. F. Boujmil , B. Durand , J.-L. Lazzari Current Applied Physics, 2019, 20 (1), pp.29 - 36. ⟨10.1016/j.cap.2019.09.015⟩ Article dans une revue hal-03141578v1
	Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position A. Krivosheeva , V. Shaposhnikov , V. e. Borisenko , Jean-Louis Lazzari International Journal of Nanoscience, 2019, 18 (03n04), pp.1940007. ⟨10.1142/S0219581X19400076⟩ Article dans une revue hal-02414584v1
	Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles M. Alaya , R. Benabderrahmane Zaghouani , S. Khamlich , J. -L. Lazzari , W. Dimassi Thin Solid Films, 2018, 645, pp.51-56. ⟨10.1016/j.tsf.2017.10.041⟩ Article dans une revue hal-01688043v1
	Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application H Saïdi , M Boujmil , B Durand , J.-L. Lazzari , M Bouaïcha Materials Research Express, 2018, 5 (1), pp.016414. ⟨10.1088/2053-1591/aaa604⟩ Article dans une revue hal-03144205v1
	Multiscale in modelling and validation for solar photovoltaics Tareq Abu Hamed , Nadja Adamovic , Urs Aeberhard , Diego Alonso-Alvarez , Zoe Amin-Akhlaghi EPJ Photovoltaics, 2018, 9, pp.10. ⟨10.1051/epjpv/2018008⟩ Article dans une revue hal-01908379v1
	Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation R. Benabderrahmane Zaghouani , M. Alaya , H. Nouri , J.-L. Lazzari , W. Dimassi Journal of Materials Science: Materials in Electronics, 2018, 29 (20), pp.17731-17736. ⟨10.1007/s10854-018-9879-1⟩ Article dans une revue hal-01958616v1
	Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application H. Saidi , M Boujmil , B Durand , J-L Lazzari , M Bouaïcha Materials Research Express, 2018, 5 (1), ⟨10.1088/2053-1591/aaa604⟩ Article dans une revue hal-01720283v1
	Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles M. Alaya , Rabia Benabderrahmane Zaghouani , S. Khamlich , J.-L. Lazzari , W. Dimassi Thin Solid Films, 2018, 645, pp.51-56. ⟨10.1016/j.tsf.2017.10.041⟩ Article dans une revue hal-03156158v1
	Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis Hela Boustanji , Sihem Jaziri , Jean-Louis Lazzari Solar Energy Materials and Solar Cells, 2017, 159, pp.633 - 639. ⟨10.1016/j.solmat.2016.03.038⟩ Article dans une revue hal-01720820v1
	Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis Hela Boustanji , Sihem Jaziri , J.-L. Lazzari Solar Energy Materials and Solar Cells, 2017, 159, pp.633-639. ⟨10.1016/j.solmat.2016.03.038⟩ Article dans une revue hal-03144529v1
	Composition dependence of the band offsets in wurtzite nitride-based heterojunctions Amel Bhouri , Jean-Louis Lazzari Materials Science in Semiconductor Processing, 2016, 41, pp.121-131. ⟨10.1016/j.mssp.2015.08.011⟩ Article dans une revue hal-01455010v1
	Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons A. Kechiantz , A. Afanasev , J. -L. Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.767-774. ⟨10.1016/j.solmat.2015.01.034⟩ Article dans une revue hal-01455013v1
	Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons A. Kechiantz , A. Afanasev , J.-L. Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.767-774. ⟨10.1016/j.solmat.2015.01.034⟩ Article dans une revue hal-03144548v1
	Composition dependence of the band offsets in wurtzite nitridebased heterojunctions Amel Bhouri , J.-L. Lazzari Materials Science in Semiconductor Processing, 2016, 41, pp.121-131. ⟨10.1016/j.mssp.2015.08.011⟩ Article dans une revue hal-03150428v1
	Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode A. Rached , A. Bhouri , S. Sakr , J.-L. Lazzari , H. Belmabrouk Superlattices and Microstructures, 2016, 91, pp.37-50. ⟨10.1016/j.spmi.2015.12.035⟩ Article dans une revue hal-03150265v1
	Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells Mahfoudh Raissi , Gabrielle Regula , Jean-Louis Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.775-780. ⟨10.1016/j.solmat.2014.10.024⟩ Article dans une revue hal-01435212v1
	Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells Mahfoudh Raïssi , Gabrielle Regula , J.-L. Lazzari Solar Energy Materials and Solar Cells, 2016, 144, pp.775-780. ⟨10.1016/j.solmat.2014.10.024⟩ Article dans une revue hal-03144540v1
	Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode A. Rached , A. Bhouri , S. Sakr , J. -L. Lazzari , H. Belmabrouk Superlattices and Microstructures, 2016, 91, pp.37-50. ⟨10.1016/j.spmi.2015.12.035⟩ Article dans une revue hal-01455019v1
	Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells Ara Kechiantz , Andrei Afanasev , J.-L. Lazzari Progress in Photovoltaics: Research and Applications, 2015, 23 (8), pp.1003-1016. ⟨10.1002/pip.2521⟩ Article dans une revue hal-03151392v1
	Theoretical study of defect impact on two-dimensional MoS 2 Anna Krivosheeva , Victor Shaposhnikov , Victor Borisenko , Jean-Louis Lazzari , Chow Waileong Chinese Journal of Semiconductors, 2015, 36 (12), ⟨10.1088/1674-4926/36/12/122002⟩ Article dans une revue hal-01721079v1
	Band gap modifications of two-dimensional defected MoS 2 A. V. Krivosheeva , V. L. Shaposhnikov , V. E. Borisenko , J.-L. Lazzari , N. V. Skorodumova International Journal of Nanotechnology, 2015, 12 (8-9), pp.654. ⟨10.1504/IJNT.2015.068886⟩ Article dans une revue hal-03144566v1
	Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells A. Kechiantz , A. Afanas'Ev , J-L. Lazzari Progress in Photovoltaics, 2015, 23 (8), pp.1003-1016 Article dans une revue hal-01176908v1
	Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures A Bhouri , A Rached , J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03151381v1
	Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling N Yahyaoui , N Sfina , J.-L. Lazzari , A Bournel , M Said Semiconductor Science and Technology, 2015, 30 (8), pp.085016. ⟨10.1088/0268-1242/30/8/085016⟩ Article dans une revue hal-03151362v1
	Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures A Bhouri , A Rached , J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03151396v1
	Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge_0.964Sn_0.036/Ge multiple quantum wells by quantum modelling N. Yahyaoui , N. Sfina , J. L. Lazzari , A. Bournel , M. Said Semiconductor Science and Technology, 2015, 30 (8), pp.085016. ⟨10.1088/0268-1242/30/8/085016⟩ Article dans une revue hal-01214522v1
	Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector N. Harbi , N. Sfina , A. Jbeli , J-L. Lazzari , M. Said Optical Materials, 2015, 46, pp.472-480 Article dans une revue hal-01176915v1
	Resonant tunneling transport in AlzGa1-zN/InxGa1-x/AlzGa1-zN/InyGa1-yN quantum structures A. Bhouri , A. Rached , J-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102 Article dans une revue hal-01214532v1
	Direct band gap In x Ga 1Àx As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector N. Harbi , N. Sfina , A. Jbeli , J.-L. Lazzari , M. Said Optical Materials, 2015, 46, pp.472-480. ⟨10.1016/j.optmat.2015.05.006⟩ Article dans une revue hal-03144491v1
	Band gap modifications of two-dimensional defected MoS2 A.V. Krivosheeva , V.L. Shaposhnikov , V.E. Borisenko , Jean-Louis Lazzari , N.V. Skorodumova International Journal of Nanotechnology, 2015, 12 (8/9), pp.654 - 662. ⟨10.1504/IJNT.2015.068886⟩ Article dans une revue hal-01721341v1
	Theoretical study of defect impact on two-dimensional MoS 2 Anna Krivosheeva , Victor Shaposhnikov , Victor Borisenko , J.-L. Lazzari , Chow Waileong Journal of Semiconductors, 2015, 36 (12), pp.122002. ⟨10.1088/1674-4926/36/12/122002⟩ Article dans une revue hal-03151410v1
	Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures A Bhouri , A Rached , J.-L. Lazzari Journal of Physics D: Applied Physics, 2015, 48 (38), pp.385102. ⟨10.1088/0022-3727/48/38/385102⟩ Article dans une revue hal-03150395v1
	Stark shift of the absorption spectra in Ge/Ge1−xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators N. Yahyaoui , N. Sfina , J.-L. Lazzari , A. Bournel , M. Said Superlattices and Microstructures, 2015, 85, pp.629-637. ⟨10.1016/j.spmi.2015.06.021⟩ Article dans une revue hal-03144282v1
	Magnetic properties of AII-BIV-CV2 chalcopyrite semiconductors doped with 3d-elements A.V. Krivosheeva , V.L. Shaposhnikov , V.E. Borisenko , J-L. Lazzari physica status solidi (b), 2014, 251 (5), pp.1007-1019 Article dans une revue hal-00992902v1
	Magnetic properties of A II -B IV -C 2 V chalcopyrite semiconductors doped with 3d-elements Anna Krivosheeva , Victor Shaposhnikov , Victor Borisenko , J.-L. Lazzari physica status solidi (b), 2014, 251 (5), pp.1007-1019. ⟨10.1002/pssb.201350305⟩ Article dans une revue hal-03151346v1
	Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication Noureddine Sfina , Naima Yahyaoui , Moncef Said , J.-L. Lazzari Modeling and Numerical Simulation of Material Science, 2014, 4 (1), pp.37-52. ⟨10.4236/mnsms.2014.41007⟩ Article dans une revue hal-03144388v1
	Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n infrared photodetectors for 1.3-1.55 μm optical communication N. Sfina , N. Yahyaoui , M. Said , J.-L. Lazzari Modelling and Numerical Simulation of Material Science, 2014, 4, pp.37-52 Article dans une revue hal-00975045v1
	Wave-function engineering and absorption spectra in Si 0.16 Ge 0.84 /Ge 0.94 Sn 0.06 /Si 0.16 Ge 0.84 strained on relaxed Si 0.10 Ge 0.90 type I quantum well N. Yahyaoui , N. Sfina , J.-L. Lazzari , A. Bournel , M. Said Journal of Applied Physics, 2014, 115 (3), pp.033109. ⟨10.1063/1.4862226⟩ Article dans une revue hal-03144424v1
	Electron transport through cubic InGaN/AlGaN resonant tunneling diodes S Abdi-Ben Nasrallah , N. Yahyaoui , N. Sfina , S. Abdi-Ben Nasrallah , J.-L. Lazzari Computer Physics Communications, 2014, 185 (12), pp.3119-3126. ⟨10.1016/j.cpc.2014.08.006⟩ Article dans une revue hal-03144318v1
	Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection N. Yahyaoui , N. Sfina , J.-L. Lazzari , A. Bournel , M. Said physica status solidi (c), 2014, 11 (11-12), pp.1561-1565. ⟨10.1002/pssc.201400054⟩ Article dans une revue hal-03144555v1
	Electron transport through cubic InGaN/AlGaN resonant tunneling diodes N. Yahyaoui , N. Sfina , S. Abdi-Ben Nasrallah , J-L. Lazzari , M. Said Computer Physics Communications, 2014, 185 (12), pp.3119-3126 Article dans une revue hal-01221448v1
	Intersubband transitions in quantum well mid-infrared photodetectors N. Zeiri , N. Sfina , S. Abdi-Ben Nasrallah , J.-L. Lazzari , M. Said Infrared Physics and Technology, 2013, 60, pp.137-144 Article dans une revue hal-00975049v1
	Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells N. Yahyaoui , N. Sfina , J.-L. Lazzari , A. Bournel , M. Said The European Physical Journal B: Condensed Matter and Complex Systems, 2013, 86 (2), pp.59 Article dans une revue hal-00843724v1
	Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors V.L. Shaposhnikov , A.V. Krivosheeva , V.E. Borisenko , J.L. Lazzari , F. Arnaud d'Avitaya Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2012, 85, pp.205201 Article dans une revue hal-00698898v1
	Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 mu m N. Sfina , J.-L. Lazzari , M. Said Superlatices and Microstructures, 2012, 52 (4), pp.901-912 Article dans une revue hal-00773483v1
	Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode S. Mnasri , S. Abdi-Ben Nasrallah , N. Sfina , J.L. Lazzari , M. Said Journal of Nanoscience and Nanotechnology, 2012, 12 (11), pp.8791-8796 Article dans une revue hal-00843723v1
	Electronic Properties of GaSb Based Heterostructure for 3 um Emission A. Jdidi , S. Abdi-Ben Nasrallah , N. Sfina , M. Saïd , J.-L. Lazzari Sensor letters, 2012, 9 (6), pp.2257-2260 Article dans une revue hal-00698897v1
	Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductor heterostructure S. Mnasri , N. Sfina , S. Abdi-Ben Nasrallah , J.-L. Lazzari , M. Said Journal of Magnetism and Magnetic Materials, 2011, 323, pp.334-339 Article dans une revue hal-00566373v1
	Different Architectures of Relaxed Si1-xGex/Si Pseudo-Substrates Grown by Low-Pressure Chemical Vapor Deposition: Structural and Morphological Characteristics Mahfoudh Raïssi , G. Regula , C. Hadj Belgacem , N. Rochdi , S. Bozzo-Escoubas Journal of Crystal Growth, 2011, 328, pp.18-24 Article dans une revue hal-00624850v1
	AII-BIV-CV2 ternary semiconductors for photovoltaics A.V. Krivosheeva , V.L. Shaposhnikov , V.E. Borisenko , F. Arnaud d'Avitaya , J.-L. Lazzari Global Journal of Physical Chemistry, 2011, 2 (2), pp.201-205 Article dans une revue hal-00603275v1
	Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation N. Rochdi , K. Liudvikouskaya , M. Descoins , Mahfoudh Raïssi , C. Coudreau Thin Solid Films, 2011, 519 (19), pp.6302-6306 Article dans une revue hal-00603279v1
	Electrical field and temperature effects in 2D-2D resonant tunneling diodes based on cubic InGaN/AlGaN A. Bhouri , N. Yahyaoui , M. Debbichi , H. Mejri , J.-L. Lazzari physica status solidi (c), 2011, 8 (5), pp.1544-1547 Article dans une revue hal-00603259v1
	Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures N. Rochdi , Mahfoudh Raïssi , S. Vizzini , C. Coudreau , J.-L. Lazzari Global Journal of Physical Chemistry, 2011, 2 (2), pp.230-235 Article dans une revue hal-00603274v1
	A theoretical study of band structure properties for III-V nitrides quantum wells S. Ben Rejeb , A. Bhouri , M. Debbichi , J.-L. Lazzari , M. Said Superlattices and Microstructures, 2011, 50 (4), pp.277-288. ⟨10.1016/j.spmi.2011.07.004⟩ Article dans une revue hal-00624857v1
	A multi-color quantum well photodetector for mid- and long-wavelength infrared detection A. Jdidi , N. Sfina , S. Abdi-Ben Nassrallah , M. Saïd , J.-L. Lazzari Semiconductor Science and Technology, 2011, 26 (12), pp.125019. ⟨10.1088/0268-1242/26/12/125019⟩ Article dans une revue hal-00696826v1
	Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer T. El Asri , Mahfoudh Raïssi , S. Vizzini , A. El Maachi , E.L. Ameziane Applied Surface Science, 2010, 256, pp.2731-2734 Article dans une revue hal-00475821v1
	Engineering of Ga1-xInxAsySb1y/GaSb quantum well for III-V based devices emitting near 2.7 µm A. Jdidi , N. Sfina , M. Saïd , J.L. Lazzari Institute of physics conference series, 2010, 13, pp.012005 Article dans une revue hal-00603269v1
	Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system Mahfoudh Raïssi , S. Vizzini , G. Langer , N. Rochdi , H. Oughaddou Thin Solid Films, 2010, 518 (21), pp.5992-5994 Article dans une revue hal-00523867v1
	Alternative II-IV-V2 and Zn-III-IV-As3 compounds for photovoltaic applications A.V. Krivosheeva , V.L. Shaposhnikov , V.E. Borisenko , J. L. Lazzari Fizika, 2010, XVI (3-4EN), pp.33-36 Article dans une revue hal-00603270v1
	Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds A.V. Krivosheeva , V.L. Shaposhnikov , F. Arnaud d'Avitaya , V.E. Borisenko , J.L. Lazzari Journal of Physics: Condensed Matter, 2009, 21 (1-6), pp.045507 Article dans une revue hal-00386900v1
	A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation M. Debbichi , S. Ridene , H. Bouchriha , A. Ben Fredj , M. Saïd Semiconductor Science and Technology, 2009, 24 (8), ⟨10.1088/0268-1242/24/8/085010⟩ Article dans une revue hal-01618135v1
	Nitrogen effect on optical grain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser M. Debbichi , A. Ben Fredj , M. Said , J.L. Lazzari , Y. Cuminal Physica E: Low-dimensional Systems and Nanostructures, 2008, 40 (3), pp.489-493 Article dans une revue hal-00269960v1
	InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations M Debbichi , A Ben Fredj , Y. Cuminal , J-L Lazzari , S Ridene Journal of Physics D: Applied Physics, 2008, 41 (21), pp.215106. ⟨10.1088/0022-3727/41/21/215106⟩ Article dans une revue hal-01617369v1
	Structural, electronic and optical properties of II-IV-N-2 compounds (II=Be,Zn;IV=Si,Ge) V.L. Shaposhnikov , A.V. Krivosheeva , F. Arnaud D?avitaya , J.L. Lazzari , V.E. Borisenko physica status solidi (b), 2008, 245 (1), pp.142-148 Article dans une revue hal-00269959v1
	Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications M. Debbichi , A. Fredj , A. Bhouri , M. Saïd , J.-L. Lazzari Materials Science and Engineering: C, 2008, 28 (5-6), pp.751 - 754. ⟨10.1016/j.msec.2007.10.072⟩ Article dans une revue hal-01617344v1
	Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser M. Debbichi , A. Ben Fredj , M. Saïd , J.L Lazzari , Y. Cuminal Physica E: Low-dimensional Systems and Nanostructures, 2008, 40 (3), pp.489-493. ⟨10.1016/j.physe.2007.07.003⟩ Article dans une revue hal-00327284v1
	Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si N. Sfina , J.-L. Lazzari , Y. Cuminal , Philippe Christol , M. Said Materials Science and Engineering: C, 2008, 28 (5-6), pp.939 - 942. ⟨10.1016/j.msec.2007.10.083⟩ Article dans une revue hal-01617316v1
	Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm N. Sfina , J.-L. Lazzari , Y. Cuminal , Philippe Christol , M. Said Thin Solid Films, 2008, 517 (1), pp.388-390. ⟨10.1016/j.tsf.2008.08.038⟩ Article dans une revue hal-00386891v1
	Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface S. Vizzini , H. Oughaddou , C. Leandri , V.K. Lazarov , A. Kohn Journal of Crystal Growth, 2007, 305, pp.26 Article dans une revue hal-00386873v1
	Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface H. Oughaddou , C. Leandri , V.K. Lazarov , A. Kohn , K. Nguyen Journal of Crystal Growth, 2007, 305, pp.26-29 Article dans une revue hal-00175319v1
	Resonant tunnelling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum wells J.A. Berashevich , V.E. Borisenko , E. Viktor , J.L. Lazzari , F. Arnaud d'Avitaya Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75 (11), pp.115336 Article dans une revue hal-00165310v1
	Resonant tunneling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum well J.A. Berashevich , V.E. Borisenko , J.L. Lazzari , F. Arnaud d'Avitaya Virtual Journal of Nanoscale Science & Technology, 2007, 15 (12), pp.149 Article dans une revue hal-00175316v1
	Growth of magnetic tunnel junctions on Si(001) substrates S. Olive-Mendez , Vinh Le Thanh , I. Ozerov , S. Ferrero , C. Coudreau Thin Solid Films, 2007, 515, pp.6501-6506. ⟨10.1016/j.tsf.2007.02.077⟩ Article dans une revue hal-00175305v1
	A novel quantum-well laser structure based on InAs1-xNx/GaSb system M. Debbichi , Fredj A. Ben , A. Bhouri , M. Said , J.L. Lazzari physica status solidi (c), 2007, 4 (2), pp.592-594. ⟨10.1002/pssc.200673246⟩ Article dans une revue hal-00175311v1
	Field effect on electron-hole recombination in Si/Si1-Xgex/Si quantum wells having a W-like type II potential profile N. Sfina , J.L. Lazzari , M. Said Materials Science and Engineering: C, 2006, 26, n° 2-3, pp.214-217 Article dans une revue hal-00068519v1
	Modeling of the Stark effect in strained n-type Ge0.6Si0.4/Si/Ge0.6Si0.4 resonat tunneling diodes with graded electrostatic GexSi1-x (0.25 N. Sfina , Nasrallah S. Abdi-Ben , J.L. Lazzari , M. Said Materials Science in Semiconductor Processing, 2006, 9 (4-5), pp.737-740 Article dans une revue hal-00133705v1
	Induced electrostatic confinement of electron gas in W strain-compensated Si/SiGe/Si type-II quantum wells N. Sfina , J.L Lazzari , Philippe Christol , Y. Cuminal , M. Saïd Journal of Luminescence, 2006, 121 (2), pp.421-425. ⟨10.1016/j.jlumin.2006.08.082⟩ Article dans une revue hal-00328229v1
	Field effect on optical recombination in Si/SiGe quantum hgeterostructures having U, W and M type II potential designs N. Sfina , J.L. Lazzari , M. Said Materials Science and Engineering: B, 2005, 124, pp.470-474 Article dans une revue hal-00016469v1
	Strain-balanced Si_1-xGe_x/Si type II quantum wells for 1.55μm detection and emission N. Sfina , J.L. Lazzari , J. Derrien , F.A. d'Avitaya , M. Said The European Physical Journal B: Condensed Matter and Complex Systems, 2005, 48 (2), pp.151-156. ⟨10.1140/epjb/e2005-00389-6⟩ Article dans une revue hal-00017817v1
	Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm J. Leclercq , P. Grunberg , G. Boissier , C. Fouillant , S. Sadik Journal de Physique III, 1993, 3 (10), pp.1963-1979. ⟨10.1051/jp3:1993254⟩ Article dans une revue jpa-00249058v1
	Liquid phase epitaxy and characterization of InAs1- x - ySb x P y on (100) InAs H. Mani , E. Tournié , J.-L. Lazzari , C. Alibert , A. Joullié Journal of Crystal Growth, 1992, 121 (3), pp.463-472. ⟨10.1016/0022-0248(92)90158-F⟩ Article dans une revue hal-03156839v1
	GaInAsSb/GaSb pn photodiodes for detection to 2.4 μm E. Tournié , J.-L. Lazzari , E. Villemain , A. Joullié , L. Gouskov Electronics Letters, 1991, 27 (14), pp.1237. ⟨10.1049/el:19910776⟩ Article dans une revue hal-03156834v1
	Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K F. Pitard , E. Tournié , M. Mohou , G. Boissier , J.-L. Lazzari Journal de Physique III, 1991, 1 (4), pp.605-622. ⟨10.1051/jp3:1991143⟩ Article dans une revue jpa-00248604v1
	2.5 μm GaInAsSb lattice‐matched to GaSb by liquid phase epitaxy E. Tournié , J.-L. Lazzari , F. Pitard , C. Alibert , A. Joullié Journal of Applied Physics, 1990, 68 (11), pp.5936-5938. ⟨10.1063/1.346925⟩ Article dans une revue hal-03156369v1

	Quantum well width and barrier thickness effects on the perpendicular transport in polar and non-polar oriented AlGaN/GaN Resonant Tunneling Diodes Nafaa Kacem , Amel Bhouri , J.-L. Lazzari , Nejeh Jaba 2021 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS), Jun 2021, Sfax, Tunisia Communication dans un congrès hal-03656141v1
	Heterostructures of two-dimensional transition metal dichalcogenides: formation, ab initio modelling and possible applications A.V. V Krivosheeva , V.L. L Shaposhnikov , V.E. E Borisenko , J.-L. Lazzari 17th International Conference on Nanosciences & Nanotechnologies (NN20), Nanotexnology, Jul 2020, Thessaloniki, Greece. ⟨10.1016/j.matpr.2021.10.217⟩ Communication dans un congrès hal-03451177v1
	Efficiency limit of AlGaAs solar cell modified by AlGaSb quantum dot intermediate band embedded outside the depletion region A. Kechiantz , A. Afanasev , J.-L. Lazzari , A. Bhouri , Y. Cuminal 24th EUPVSEC, 2012, Frankfurt, Germany Communication dans un congrès hal-01862183v1
	Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infrared M. Debbichi , S. Ridene , A. Ben Fredj , M. Saïd , H. Bouchriha EMRS Int. Conference, 2009, Strasbourg, France Communication dans un congrès hal-01828413v1
	Dilute-Nitride "W" and "M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domain M. Debbichi , A. Ben Fredj , M. Saïd , S. Ridene , H. Bouchriha MADICA 2008, 2008, Rabat, Morocco Communication dans un congrès hal-01825842v1
	Layer-by-layer growth of aluminium nanometer-scaled oxide barrier for use in magnetic tunnel junctions formed on Si(001) substrates S.F. Olive-Mendez , Vinh Le Thanh , Igor Ozerov , Sylvain Ferreo , Cyril Coudreau E-MRS IUMRS ICEM 2006 Spring Meeting, May 2006, Nice, France Communication dans un congrès hal-01896719v1
	Carrier Concentration Control of GaSb/GaInAsSb System Philippe Christol , J. Lazzari , F. de Anda , Juanjo Nieto , H. Aït-Kaci THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: TPV7: Seventh World Conference on Thermophotovoltaic Generation of Electricity, 2006, Madrid (Spain), France. ⟨10.1063/1.2711727⟩ Communication dans un congrès hal-01756645v1
	Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission. M. Debbichi , Fredj A. Ben , A. Bhouri , M. Said , J.L. Lazzari 14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. pp.338-339 Communication dans un congrès hal-00110201v1

	Croissance couche par couche par d'oxyde tunnel ( AlOx) pour application aux MRAM S. Olive Mendez , I. Ozerov , S Ferrero , V. Le Thanh , C. Coudreau 10ème Colloque Louis Néel, Sep 2005, Dourdan, France Poster de conférence hal-02904628v1

	MAGNETIC ORDERING IN DOPED TWO-DIMENSIONAL DICHALCOGENIDES A. Krivosheeva , V. Shaposhnikov , Jean-Louis Lazzari Physics, Chemistry and Application of Nanostructures, WORLD SCIENTIFIC, pp.54-57, 2017, ⟨10.1142/9789813224537_0012⟩ Chapitre d'ouvrage hal-02414605v1

Jean-Louis LAZZARI

Publications

Growth and characterization of Cu2ZnxFe1-xSnS4 thin films deposited on n-type silicon substrates

Preparation and characterization of Cu2ZnxFe1−xSnS4 thin ‎films deposited on intrinsic silicon substrates

Study of n-WO3/p-porous silicon structures for gas-sensing applications

Energy band gap tuning in Te-doped WS2/WSe2 heterostructures

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Modelization of electrical and optical characteristics of short-wave infrared type I InGaAsBi/InGaAs/InP quantum wells p-i-n detector

Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position

Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure

Optical Gain and Radiative Current Density in Strain Compensated GaAsP/GaAsBi/GaAsP QWs Laser Structure

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

Electronic Properties of WS 2 /WSe 2 Heterostructure Containing Te Impurity: The Role of Substituting Position

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application

Multiscale in modelling and validation for solar photovoltaics

Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation

Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application

Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles

Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis

Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis

Composition dependence of the band offsets in wurtzite nitride-based heterojunctions

Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons

Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons

Composition dependence of the band offsets in wurtzite nitridebased heterojunctions

Self-consistent vertical transport calculations in AlxGa1–xN/GaN based resonant tunneling diode

Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells

Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells

Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode

Impact of spatial separation of type-II GaSb quantum dots from the depletion region on the conversion efficiency limit of GaAs solar cells

Theoretical study of defect impact on two-dimensional MoS 2

Band gap modifications of two-dimensional defected MoS 2

Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells

Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge 0.964 Sn 0.036 /Ge multiple quantum wells by quantum modelling

Resonant tunneling transport in Al z Ga 1− z N/In x Ga 1− x N/Al z Ga 1− z N/In y Ga 1− y N quantum structures

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling

Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector

Resonant tunneling transport in AlzGa1-zN/InxGa1-x/AlzGa1-zN/InyGa1-yN quantum structures

Direct band gap In x Ga 1Àx As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector

Band gap modifications of two-dimensional defected MoS2

Theoretical study of defect impact on two-dimensional MoS 2

Resonant tunneling transport in AlxGa1-x/InyGa1-yN/ AlxGa1-x/ InzGa1-zN quantum structures

Stark shift of the absorption spectra in Ge/Ge1−xSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators

Magnetic properties of AII-BIV-CV2 chalcopyrite semiconductors doped with 3d-elements

Magnetic properties of A II -B IV -C 2 V chalcopyrite semiconductors doped with 3d-elements

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n infrared photodetectors for 1.3-1.55 μm optical communication

Wave-function engineering and absorption spectra in Si 0.16 Ge 0.84 /Ge 0.94 Sn 0.06 /Si 0.16 Ge 0.84 strained on relaxed Si 0.10 Ge 0.90 type I quantum well

Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

Band engineering and absorption spectra in compressively strained Ge 0.92 Sn 0.08 /Ge (001) double quantum well for infrared photodetection

Electron transport through cubic InGaN/AlGaN resonant tunneling diodes

Intersubband transitions in quantum well mid-infrared photodetectors

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells

Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors

Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 mu m

Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode

Electronic Properties of GaSb Based Heterostructure for 3 um Emission

Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductor heterostructure

Different Architectures of Relaxed Si1-xGex/Si Pseudo-Substrates Grown by Low-Pressure Chemical Vapor Deposition: Structural and Morphological Characteristics

AII-BIV-CV2 ternary semiconductors for photovoltaics

Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation

Electrical field and temperature effects in 2D-2D resonant tunneling diodes based on cubic InGaN/AlGaN

Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures

A theoretical study of band structure properties for III-V nitrides quantum wells

A multi-color quantum well photodetector for mid- and long-wavelength infrared detection

Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer

Engineering of Ga1-xInxAsySb1y/GaSb quantum well for III-V based devices emitting near 2.7 µm

Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system

Alternative II-IV-V2 and Zn-III-IV-As3 compounds for photovoltaic applications

Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds

A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation

Nitrogen effect on optical grain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser

InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations

Structural, electronic and optical properties of II-IV-N-2 compounds (II=Be,Zn;IV=Si,Ge)

Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications

Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser

Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si

Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm

Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface

Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge_0.964Sn_0.036/Ge multiple quantum wells by quantum modelling

Strain-balanced Si_1-xGe_x/Si type II quantum wells for 1.55μm detection and emission