Co-auteurs

Nombre de documents

61

LAZZARI Jean-Louis


Article dans une revue57 documents

  • H. Saidi, M Boujmil, B Durand, J-L Lazzari, M Bouaïcha. Elaboration and characterization of CuInSe 2 thin films using one-step electrodeposition method on silicon substrate for photovoltaic application. Materials Research Express, IOP Publishing Ltd, 2018, 5 (1), 〈10.1088/2053-1591/aaa604〉. 〈hal-01720283〉
  • M. Alaya, R. Benabderrahmane Zaghouani, S. Khamlich, J. -L. Lazzari, W. Dimassi. Enhancement of physical properties of stain-etched porous silicon by integration of WO3 nanoparticles. Thin Solid Films, Elsevier, 2018, 645, pp.51-56. 〈10.1016/j.tsf.2017.10.041〉. 〈hal-01688043〉
  • Hela Boustanji, Sihem Jaziri, Jean-Louis Lazzari. Contribution of a single quantum dots layer in intermediate band solar cells: A capacitance analysis. Solar Energy Materials and Solar Cells, Elsevier, 2017, 159, pp.633 - 639. 〈10.1016/j.solmat.2016.03.038〉. 〈hal-01720820〉
  • A. Kechiantz, A. Afanasev, J. -L. Lazzari. Releasing confined holes from type-II quantum dots by inelastic scattering with hot photoelectrons. Solar Energy Materials and Solar Cells, Elsevier, 2016, 144, pp.767-774. 〈10.1016/j.solmat.2015.01.034〉. 〈hal-01455013〉
  • Mahfoudh Raissi, Gabrielle Regula, Jean-Louis Lazzari. Low-defect metamorphic Si (Ge) epilayers on Si (001) with a buried template of nanocavities for multiple-junction solar cells. Solar Energy Materials and Solar Cells, Elsevier, 2016, 144, pp.775-780. 〈10.1016/j.solmat.2014.10.024〉. 〈hal-01435212〉
  • A. Rached, A. Bhouri, S. Sakr, J. -L. Lazzari, H. Belmabrouk. Self-consistent vertical transport calculations in Al(x)Ga1-xN/GaN based resonant tunneling diode. Superlattices and Microstructures, Elsevier, 2016, 91, pp.37-50. 〈10.1016/j.spmi.2015.12.035〉. 〈hal-01455019〉
  • Amel Bhouri, Jean-Louis Lazzari. Composition dependence of the band offsets in wurtzite nitride-based heterojunctions. Materials Science in Semiconductor Processing, Elsevier, 2016, 41, pp.121-131. 〈10.1016/j.mssp.2015.08.011〉. 〈hal-01455010〉
  • A. Kechiantz, A. Afanas'Ev, J-L. Lazzari. Impact of Spatial Separation of Type-II GaSb Quantum Dots from the Depletion Region on the Conversion Efficiency Limit of GaAs Solar Cells. Progress in Photovoltaics: Research and Applications, 2015, 23 (8), pp.1003-1016. 〈hal-01176908〉
  • N. Harbi, N. Sfina, A. Jbeli, J-L. Lazzari, M. Said. Direct band gap InxGa1-xAs/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector. Optical Materials, Elsevier, 2015, 46, pp.472-480. 〈hal-01176915〉
  • N. Yahyaoui, N. Sfina, J. L. Lazzari, A. Bournel, M. Said. Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling. Semiconductors Science Technology, 2015, 30 (8), pp.085016. 〈hal-01214522〉
  • Anna Krivosheeva, Victor Shaposhnikov, Victor Borisenko, Jean-Louis Lazzari, Chow Waileong, et al.. Theoretical study of defect impact on two-dimensional MoS 2. Chinese Journal of Semiconductors, 2015, 36 (12), 〈10.1088/1674-4926/36/12/122002〉. 〈hal-01721079〉
  • A. Bhouri, A. Rached, J-L. Lazzari. Resonant tunneling transport in AlzGa1-zN/InxGa1-x/AlzGa1-zN/InyGa1-yN quantum structures. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (38), pp.385102. 〈hal-01214532〉
  • A.V. Krivosheeva, V.L. Shaposhnikov, V.E. Borisenko, Jean-Louis Lazzari, N.V. Skorodumova, et al.. Band gap modifications of two-dimensional defected MoS2. International Journal of Nanotechnology, Inderscience, 2015, 12 (8/9), pp.654 - 662. 〈10.1504/IJNT.2015.068886〉. 〈hal-01721341〉
  • A.V. Krivosheeva, V.L. Shaposhnikov, V.E. Borisenko, J-L. Lazzari. Magnetic properties of AII-BIV-CV2 chalcopyrite semiconductors doped with 3d-elements. physica status solidi (b), Wiley, 2014, 251 (5), pp.1007-1019. 〈hal-00992902〉
  • N. Sfina, N. Yahyaoui, M. Said, J.-L. Lazzari. Modelling of the quantum transport in strained Si/SiGe/Si superlattices based p-i-n infrared photodetectors for 1.3-1.55 μm optical communication. Modelling and Numerical Simulation of Material Science, 2014, 4, pp.37-52. 〈hal-00975045〉
  • N. Yahyaoui, N. Sfina, S. Abdi-Ben Nasrallah, J-L. Lazzari, M. Said. Electron transport through cubic InGaN/AlGaN resonant tunneling diodes. Computer Physics Communications, Elsevier, 2014, 185 (12), pp.3119-3126. 〈hal-01221448〉
  • N. Yahyaoui, N. Sfina, J.-L. Lazzari, A. Bournel, M. Said. Wave-function engineering and absorption spectra in Si0.16Ge0.84/Ge0.94Sn0.06/Si0.16Ge0.84 strained on relaxed Si0.10Ge0.90 type I quantum well. Journal of Applied Physics, American Institute of Physics, 2014, 115 (3), pp.033109. 〈hal-00975044〉
  • N. Yahyaoui, N. Sfina, J.-L. Lazzari, A. Bournel, M. Said. Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si1-xGex/Ge/Si1-xGex type-I quantum wells. European Physical Journal B: Condensed Matter and Complex Systems, Springer-Verlag, 2013, 86 (2), pp.59. 〈hal-00843724〉
  • N. Zeiri, N. Sfina, S. Abdi-Ben Nasrallah, J.-L. Lazzari, M. Said. Intersubband transitions in quantum well mid-infrared photodetectors. Infrared Physics and Technology, Elsevier, 2013, 60, pp.137-144. 〈hal-00975049〉
  • V.L. Shaposhnikov, A.V. Krivosheeva, V.E. Borisenko, J.L. Lazzari, F. Arnaud d'Avitaya. Ab initio modeling of the structural, electronic and optical properties of AIIBIVCV2 semiconductors. Physical Review B : Condensed matter and materials physics, American Physical Society, 2012, 85, pp.205201. 〈hal-00698898〉
  • S. Mnasri, S. Abdi-Ben Nasrallah, N. Sfina, J.L. Lazzari, M. Said. Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2012, 12 (11), pp.8791-8796. 〈hal-00843723〉
  • A. Jdidi, S. Abdi-Ben Nasrallah, N. Sfina, M. Saïd, J.-L. Lazzari. Electronic Properties of GaSb Based Heterostructure for 3 um Emission. Sensor letters, American Scientific Publishers, 2012, 9 (6), pp.2257-2260. 〈hal-00698897〉
  • N. Sfina, J.-L. Lazzari, M. Said. Si/S1-xGex/Si-based quantum wells infrared photodetector operating at 1.55 mu m. Superlatices and Microstructures, 2012, 52 (4), pp.901-912. 〈hal-00773483〉
  • A.V. Krivosheeva, V.L. Shaposhnikov, V.E. Borisenko, F. Arnaud d'Avitaya, J.-L. Lazzari. AII-BIV-CV2 ternary semiconductors for photovoltaics. Global Journal of Physical Chemistry, Simplex Academic Publishers, 2011, 2 (2), pp.201-205. 〈hal-00603275〉
  • A. Bhouri, N. Yahyaoui, M. Debbichi, H. Mejri, J.-L. Lazzari, et al.. Electrical field and temperature effects in 2D-2D resonant tunneling diodes based on cubic InGaN/AlGaN. physica status solidi (c), Wiley, 2011, 8 (5), pp.1544-1547. 〈hal-00603259〉
  • N. Rochdi, Mahfoudh Raïssi, S. Vizzini, C. Coudreau, J.-L. Lazzari, et al.. Structural and electrical characterizations of nanometer scaled aluminum oxide in metal / insulator / silicon (100) heterostructures. Global Journal of Physical Chemistry, Simplex Academic Publishers, 2011, 2 (2), pp.230-235. 〈hal-00603274〉
  • S. Mnasri, N. Sfina, S. Abdi-Ben Nasrallah, J.-L. Lazzari, M. Said. Spin polarization and spin-dependent transmittance in II-VI diluted magnetic semiconductor heterostructure. Journal of Magnetism and Magnetic Materials, Elsevier, 2011, 323, pp.334-339. 〈hal-00566373〉
  • A. Jdidi, N. Sfina, S. Abdi-Ben Nassrallah, M. Saïd, J.-L. Lazzari. A multi-color quantum well photodetector for mid- and long-wavelength infrared detection. Semiconductor Science and Technology, IOP Publishing, 2011, 26 (12), pp.125019. 〈10.1088/0268-1242/26/12/125019〉. 〈hal-00696826〉
  • S. Ben Rejeb, A. Bhouri, M. Debbichi, J.-L. Lazzari, M. Said. A theoretical study of band structure properties for III-V nitrides quantum wells. Superlattices and Microstructures, Elsevier, 2011, 50 (4), pp.277-288. 〈10.1016/j.spmi.2011.07.004〉. 〈hal-00624857〉
  • Mahfoudh Raïssi, G. Regula, C. Hadj Belgacem, N. Rochdi, S. Bozzo-Escoubas, et al.. Different Architectures of Relaxed Si1-xGex/Si Pseudo-Substrates Grown by Low-Pressure Chemical Vapor Deposition: Structural and Morphological Characteristics. Journal of Crystal Growth, Elsevier, 2011, 328, pp.18-24. 〈hal-00624850〉
  • N. Rochdi, K. Liudvikouskaya, M. Descoins, Mahfoudh Raïssi, C. Coudreau, et al.. Surface morphology and structure of ultra-thin magnesium oxide grown on (100) silicon by atomic layer deposition oxidation. Thin Solid Films, Elsevier, 2011, 519 (19), pp.6302-6306. 〈hal-00603279〉
  • A. Jdidi, N. Sfina, M. Saïd, J.L. Lazzari. Engineering of Ga1-xInxAsySb1y/GaSb quantum well for III-V based devices emitting near 2.7 µm. Institute of physics conference series, 2010, 13, pp.012005. 〈hal-00603269〉
  • A.V. Krivosheeva, V.L. Shaposhnikov, V.E. Borisenko, J. L. Lazzari. Alternative II-IV-V2 and Zn-III-IV-As3 compounds for photovoltaic applications. Fizika, 2010, XVI (3-4EN), pp.33-36. 〈hal-00603270〉
  • Mahfoudh Raïssi, S. Vizzini, G. Langer, N. Rochdi, H. Oughaddou, et al.. Interfacial solid phase reactions in cobalt/aluminum oxide/silicon(001) system. Thin Solid Films, Elsevier, 2010, 518 (21), pp.5992-5994. 〈hal-00523867〉
  • T. El Asri, Mahfoudh Raïssi, S. Vizzini, A. El Maachi, E.L. Ameziane, et al.. Inter-Diffusion of cobalt and silicon through an ultrathin aluminum oxide layer. Applied Surface Science, Elsevier, 2010, 256, pp.2731-2734. 〈hal-00475821〉
  • A.V. Krivosheeva, V.L. Shaposhnikov, F. Arnaud d'Avitaya, V.E. Borisenko, J.L. Lazzari. Electronic and magnetic properties of Mn-doped BeSiAs2 and BeGeAs2 compounds. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21 (1-6), pp.045507. 〈hal-00386900〉
  • M. Debbichi, S. Ridene, H. Bouchriha, A. Ben Fredj, M. Saïd, et al.. A theoretical study of laser structures based on dilute-nitride InAsN for mid-infrared operation. Semiconductor Science and Technology, IOP Publishing, 2009, 24 (8), 〈10.1088/0268-1242/24/8/085010〉. 〈hal-01618135〉
  • M. Debbichi, A. Ben Fredj, M. Saïd, J.L Lazzari, Y. Cuminal, et al.. Nitrogen effect on optical gain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2008, 40 (3), pp.489-493. 〈hal-00327284〉
  • V.L. Shaposhnikov, A.V. Krivosheeva, F. Arnaud D?avitaya, J.L. Lazzari, V.E. Borisenko. Structural, electronic and optical properties of II-IV-N-2 compounds (II=Be,Zn;IV=Si,Ge). physica status solidi (b), Wiley, 2008, 245 (1), pp.142-148. 〈hal-00269959〉
  • M. Debbichi, A. Ben Fredj, M. Said, J.L. Lazzari, Y. Cuminal, et al.. Nitrogen effect on optical grain and radiative current density for mid-infrared InAs(N)/GaSb/InAs(N) quantum-well laser. Physica E, 2008, 40 (3), pp.489-493. 〈hal-00269960〉
  • M. Debbichi, A. Fredj, A. Bhouri, M. Saïd, J.-L. Lazzari, et al.. Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications. Materials Science and Engineering: C, Elsevier, 2008, 28 (5-6), pp.751 - 754. 〈10.1016/j.msec.2007.10.072〉. 〈hal-01617344〉
  • N. Sfina, J.-L. Lazzari, Y. Cuminal, P. Christol, M. Said. Coulomb interaction of electron gas in MQWs Si/Si1−xGex/Si. Materials Science and Engineering: C, Elsevier, 2008, 28 (5-6), pp.939 - 942. 〈10.1016/j.msec.2007.10.083〉. 〈hal-01617316〉
  • M Debbichi, A Ben Fredj, Y. Cuminal, J-L Lazzari, S Ridene, et al.. InAsN/GaSb/InAsN ‘W’ quantum well laser for mid-infrared emission: from electronic structure to threshold current density calculations. Journal of Physics D: Applied Physics, IOP Publishing, 2008, 41 (21), pp. 215106. 〈10.1088/0022-3727/41/21/215106〉. 〈hal-01617369〉
  • N. Sfina, J.-L. Lazzari, Y. Cuminal, P. Christol, M. Said. Simulation of p–i–n heterojunctions built on strain-compensated Si/Si0.40Ge0.60/Si multiple quantum wells for photodetection near 1.55 µm. Thin Solid Films, Elsevier, 2008, 517 (1), pp.388-390. 〈hal-00386891〉
  • J.A. Berashevich, V.E. Borisenko, E. Viktor, J.L. Lazzari, F. Arnaud d'Avitaya. Resonant tunnelling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum wells. Physical Review B : Condensed matter and materials physics, American Physical Society, 2007, 75 (11), pp.115336. 〈hal-00165310〉
  • J.A. Berashevich, V.E. Borisenko, J.L. Lazzari, F. Arnaud d'Avitaya. Resonant tunneling versus thermally activated transport through strained Si1-xGex/Si/Si1-xGex quantum well. Virtual Journal of Nanoscale Science & Technology, 2007, 15 (12), pp.149. 〈hal-00175316〉
  • M. Debbichi, Fredj A. Ben, A. Bhouri, M. Said, J.L. Lazzari, et al.. A novel quantum-well laser structure based on InAs1-xNx/GaSb system. physica status solidi (c), Wiley, 2007, 4 (2), pp.592-594. 〈hal-00175311〉
  • S. Vizzini, H. Oughaddou, C. Leandri, V.K. Lazarov, A. Kohn, et al.. Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface. Journal of Crystal Growth, Elsevier, 2007, 305, pp.26. 〈hal-00386873〉
  • H. Oughaddou, C. Leandri, V.K. Lazarov, A. Kohn, K. Nguyen, et al.. Controlled growth of aluminum oxide thin films on hydrogen terminated Si(001) surface. Journal of Crystal Growth, Elsevier, 2007, 305, pp.26-29. 〈hal-00175319〉
  • S. Olive-Mendez, Thanh V. Le, I. Ozerov, S. Ferrero, C. Coudreau, et al.. Layer-by-layer growth of aluminium nanometer-scaled oxide barrier for use in magnetic tunnel junctions formed on Si(001) substrates.. Thin Solid Films, Elsevier, 2007, 515, pp.6501-6506. 〈hal-00175305〉
  • N. Sfina, J.L Lazzari, P. Christol, Y. Cuminal, M. Saïd. Induced electrostatic confinement of electron gas in W strain-compensated Si/SiGe/Si type-II quantum wells. Journal of Luminescence, Elsevier, 2006, 121 (2), pp.421-425. 〈hal-00328229〉
  • N. Sfina, J.L. Lazzari, M. Said. Field effect on electron-hole recombination in Si/Si1-Xgex/Si quantum wells having a W-like type II potential profile. Materials Science and Engineering: C, Elsevier, 2006, 26, n° 2-3, pp.214-217. 〈hal-00068519〉
  • N. Sfina, Nasrallah S. Abdi-Ben, J.L. Lazzari, M. Said. Modeling of the Stark effect in strained n-type Ge0.6Si0.4/Si/Ge0.6Si0.4 resonat tunneling diodes with graded electrostatic GexSi1-x (0.25. Materials Science in Semiconductor Processing, Elsevier, 2006, 9 (4-5), pp.737-740. 〈hal-00133705〉
  • N. Sfina, J.L. Lazzari, J. Derrien, F.A. D'Avitaya, M. Said. Strain-balanced Si1-xGex/Si type II quantum wells for 1.55 mu m detection and emission. European Physical Journal B: Condensed Matter and Complex Systems, Springer-Verlag, 2005, 48, n° 2, pp.151-156. 〈hal-00017817〉
  • N. Sfina, J.L. Lazzari, M. Said. Field effect on optical recombination in Si/SiGe quantum hgeterostructures having U, W and M type II potential designs. Materials Science and Engineering: B, Elsevier, 2005, 124, pp.470-474. 〈hal-00016469〉
  • J. Leclercq, P. Grunberg, G. Boissier, C. Fouillant, S. Sadik, et al.. Caractérisation au-dessous du seuil de doubles hétérostructures lasers GaInAsSb/GaAlAsSb émettant vers 2,37 μm. Journal de Physique III, EDP Sciences, 1993, 3 (10), pp.1963-1979. 〈10.1051/jp3:1993254〉. 〈jpa-00249058〉
  • F. Pitard, E. Tournié, M. Mohou, G. Boissier, J.-L. Lazzari, et al.. Preparation et étude de diodes laser a GaInAsSb-GaAlAsSb fonctionnant en continu à 80K. Journal de Physique III, EDP Sciences, 1991, 1 (4), pp.605-622. 〈10.1051/jp3:1991143〉. 〈jpa-00248604〉

Communication dans un congrès3 documents

  • M. Debbichi, S. Ridene, A. Ben Fredj, M. Saïd, H. Bouchriha, et al.. Optical gain calculation of dilute Nitride InAsN/GaSb laser diodes operating in the mid-infrared. EMRS Int. Conference, 2009, Strasbourg, France. 〈hal-01828413〉
  • M. Debbichi, Fredj A. Ben, A. Bhouri, M. Said, J.L. Lazzari, et al.. Nitride-based quantum-well lasers on InAs substrate for midwave-infrared emission.. 14th International Symposium on Nanostructures: Physics and Technology, NANO 2006, 2006, Saint-Petersbourg, Russia. Zh. Alferov and L. Esaki Co-Chairs and Co Editors for Proceedings IRMW.04o Ioffe Institute, pp.338-339, 2006. 〈hal-00110201〉
  • P. Christol, J. Lazzari, F. De Anda, J. Nieto, H. Aït-Kaci, et al.. Carrier Concentration Control of GaSb/GaInAsSb System. THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY: TPV7: Seventh World Conference on Thermophotovoltaic Generation of Electricity, 2006, Madrid (Spain), France. AIP, 〈10.1063/1.2711727〉. 〈hal-01756645〉

Poster1 document

  • M. Debbichi, A. Ben Fredj, M. Saïd, S. Ridene, H. Bouchriha, et al.. Dilute-Nitride "W" and "M" InAsN/GaSb laser diodes for gaz analysis in the mid-infrared domain. MADICA 2008, 2008, Rabat, Morocco. 〈hal-01825842〉