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69 résultats
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Impact of RF stress on different topologies of 100 nm X-band robust GaN LNAMicroelectronics Reliability, 2023, Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, 150, pp.115126. ⟨10.1016/j.microrel.2023.115126⟩
Article dans une revue
hal-04493506v1
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Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devicesEuropean Microwave Week, 2004, Amsterdam, Netherlands
Communication dans un congrès
hal-00141963v1
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Noise characteristics of AlInN/GaN HEMTs at microwave frequenciesInternational Conference on Noise and Fluctuations, Jun 2013, Montpellier, France. pp.10.1109/ICNF.2013.6578989
Communication dans un congrès
hal-00859789v1
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Impact of the Frequency Dependence of the Parasitic Admittance on the Diffusion Noise of a Diode Junction at Low BiasIEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
Article dans une revue
hal-02388640v1
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Carrier's transport mechanisms investigations in AlGaN/GaN HEMT thanks to physical modelling and low frequency noise measurements12th Gallium Arsenide and other Compound Semiconductors Application Symposium (GAAS 2004), Oct 2004, Amsterdam, Netherlands. pp.161-162
Communication dans un congrès
hal-01343356v1
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Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS CharacterizationInternational Conf. on Noise and Fluctuations, Sep 2007, Tokyo, Japan. pp.163-166
Communication dans un congrès
hal-00272560v1
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LA TECHNOLOGIE GAN ET SES APPLICATIONS POUR L'ELECTRONIQUE ROBUSTE, HAUTE FREQUENCE ET DE PUISSANCE2008
Autre publication scientifique
hal-00341009v1
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Ka-band low noise amplifiers based on InAlN/GaN technologiesInternational Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. 4p., ⟨10.1109/ICNF.2015.7288577⟩
Communication dans un congrès
hal-01234061v1
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Low Frequency Noise Deviation from Schottky theory in p-n junctionsIEEE International Conference on Noise and Fluctuation (ICNF 2019), Jun 2019, Neuchatel, Switzerland. https://icnf2019.epfl.ch/wp-content/uploads/2019/10/ICNF2019_Proceedings.pdf
Communication dans un congrès
hal-02315085v1
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The NIMPH Project7th CubeSat Symposium , von Karman Institute for Fluid Dynamics, University of Liege, Sep 2015, Liège, Belgium
Communication dans un congrès
hal-01274184v1
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Transmission quality evaluation of Tire Pressure Monitoring SystemsITSC 2009 12th International IEEE Conference on Intelligent Transportation Systems, Oct 2009, Saint-Louis, United States. 5p., ⟨10.1109/ITSC.2009.5309712⟩
Communication dans un congrès
hal-01343436v1
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Low frequency noise behaviour in GaN HEMT's on silicon substrate2004, pp.286-295
Communication dans un congrès
hal-00141967v1
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Methodology for accurate diagnostic of defects in III-N HEMT technologies Non-destructive and destructive experimental tools-electrical and T-CAD modelsIEEE Mediterranean Electrotechnical Conference (IEEE MELECON), May 2018, Marrakech, Morocco. 5p
Communication dans un congrès
hal-01877587v1
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Low Frequency Noise Of AlGaN/GaN HEMT Grown On Al2O3 , Si And SiC Substrates18th International Conference on Noise and Fluctuations (ICNF 2005), Sep 2005, Salamanque, Spain. ⟨10.1063/1.2036754⟩
Communication dans un congrès
hal-01343434v1
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Broadband Frequency Dispersion Small Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTsIEEE Transactions on Electron Devices, 2013, 60 (4), pp. 1372-1378
Article dans une revue
hal-00859123v1
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A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA18th European Microwave Integrated Circuits Conference (EuMIC 2023), Sep 2023, Berlin, Germany. pp.13-16, ⟨10.23919/EuMIC58042.2023.10288807⟩
Communication dans un congrès
hal-04494172v1
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[Invité] Etat de l'art et défis du GaN pour l'électronique14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France
Communication dans un congrès
hal-00878877v1
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Diagnostic Tools For Accurate Reliability Investigations of GaN Devices21st International Conference on Noise and Fluctuations (ICNF 2011) by Institute of Electrical and Electronics Engineers ( IEEE ), Jun 2011, Toronto, Canada
Communication dans un congrès
hal-00907447v1
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Trapping Related Degradation Effects in AlGaN/GaN HEMTEuMC 2010, Sep 2010, Paris, France
Communication dans un congrès
hal-01343334v1
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Analysis and path localization of gate current in AlGaN/GaN HEMTs using low frequency noise measurements and Optical Beam Induced Resistance Change techniqueIEEE MTT-S International Microwave Symposium Digest (IMS 2013), Jun 2013, Seattle, WA, United States. pp.1-4, ⟨10.1109/MWSYM.2013.6697490⟩
Communication dans un congrès
hal-01343964v1
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Improved robustness of AlGaN/GaN HEMTs using Deuterium to passivate the structural defectsConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008), Jul 2008, Sydney, Australia. ⟨10.1109/COMMAD.2008.4802078⟩
Communication dans un congrès
hal-01343322v1
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Méthode de Conception Agile en Tension pour Amplificateur Faible Bruit Robuste2022
Pré-publication, Document de travail
hal-03587960v1
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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHzSemiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩
Article dans une revue
hal-02929065v1
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Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICsIEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France
Communication dans un congrès
hal-04440655v1
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Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements22nd International Conference on Noise and Fluctuations (ICNF 2013), Jun 2013, Montpellier, France. ⟨10.1109/ICNF.2013.6578987⟩
Communication dans un congrès
hal-01343426v1
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Non-destructive techniques for evaluating the reliability of high frequency active devicesMicroelectronics Reliability, 2019, 100-101, pp.113359. ⟨10.1016/j.microrel.2019.06.051⟩
Article dans une revue
hal-02388674v1
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A new Method for Designing Robust Low Noise AmplifierSpace Microwave Week 2023, European Space Agency (ESA), May 2023, Noordwijk, Netherlands
Communication dans un congrès
hal-04142799v1
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I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studiesEuropean Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. pp.438-441
Communication dans un congrès
hal-01343977v1
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InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performancesInternational Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. ⟨10.1109/ICNF.2015.7288538⟩
Communication dans un congrès
hal-01234023v1
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Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurementsMicroelectronics Reliability, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9-11), pp.1491-1495. ⟨10.1016/j.microrel.2013.07.020⟩
Article dans une revue
hal-01343328v1
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