Nombre de documents

36

CV de Jean-Guy Tartarin


Article dans une revue6 documents

  • O Lazăr, Jean-Guy Tartarin, B Lambert, C Moreau, Jean-Luc Roux. Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics Reliability, Elsevier, 2015, 55 (9-10), pp.1714-1718. <10.1016/j.microrel.2015.06.122>. <hal-01234080>
  • Serge Karboyan, Jean-Guy Tartarin, Mehdi Rzin, Laurent Brunel, Arnaud Curutchet, et al.. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectronics Reliability, Elsevier, 2013, 53 (9-11), pp.1491-1495. <hal-01002658>
  • Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, Stéphane Piotrowicz, Sylvain L. Delage. Broadband Frequency Dispersion Small Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp. 1372-1378. <hal-00859123>
  • S Karboyan, J.G. Tartarin, M Rzin, L Brunel, A Curutchet, et al.. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements. Microelectronics Reliability, Elsevier, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9-11), pp.1491-1495. <10.1016/j.microrel.2013.07.020>. <hal-01343328>
  • Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, et al.. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187. <hal-01002539>
  • B Lambert, N Labat, D Carisetti, S Karboyan, J.G. Tartarin, et al.. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187. <10.1016/j.microrel.2012.06.100>. <hal-01343325>

Communication dans un congrès28 documents

  • O Lazăr, Jean-Guy Tartarin, B Lambert, C Moreau, J.L. Roux, et al.. New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements. International Microwave Symposium (IMS 2015), May 2015, Phoenix, AZ, United States. IEEE, 2015 IEEE MTT-S International Microwave Symposium pp.1-4, 2015, <10.1109/MWSYM.2015.7166789>. <hal-01343966>
  • Arnaud Fernandez, Amadou Gadio, F Destic, Julien Sommer, A Rissons, et al.. The NIMPH Project. 7th CubeSat Symposium , Sep 2015, Liège, Belgium. 2015. <hal-01274184>
  • Séraphin Dieudonné Nsele, Charles Robin, Jean-Guy Tartarin, Laurent Escotte, S Piotrowicz, et al.. Ka-band low noise amplifiers based on InAlN/GaN technologies. International Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. 4p., 2015, <10.1109/ICNF.2015.7288577>. <hal-01234061>
  • Séraphin Dieudonné Nsele, Jean-Guy Tartarin, Laurent Escotte, S Piotrowicz, S Delage. InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances. International Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. 2015, <10.1109/ICNF.2015.7288538>. <hal-01234023>
  • Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, Stéphane Piotrowicz. Noise characteristics of AlInN/GaN HEMTs at microwave frequencies. International Conference on Noise and Fluctuations, Jun 2013, Montpellier, France. pp.10.1109/ICNF.2013.6578989, 2013. <hal-00859789>
  • Jean-Guy Tartarin, S Karboyan, D Carisetti, B. Lambert. Gate defects in AlGaN/GaN HEMTs revealed by low frequency noise measurements. 22nd International Conference on Noise and Fluctuations (ICNF 2013), Jun 2013, Montpellier, France. IEEE, 2013 22nd International Conference on Noise and Fluctuations (ICNF), <10.1109/ICNF.2013.6578987>. <hal-01343426>
  • S Karboyan, Jean-Guy Tartarin, D Carisetti, B Lambert. Analysis and path localization of gate current in AlGaN/GaN HEMTs using low frequency noise measurements and Optical Beam Induced Resistance Change technique. IEEE MTT-S International Microwave Symposium Digest (IMS 2013), Jun 2013, Seattle, WA, United States. IEEE, 2013 IEEE MTT-S International Microwave Symposium Digest (IMS), pp.1-4, 2013, <10.1109/MWSYM.2013.6697490>. <hal-01343964>
  • Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, Stéphane Piotrowicz, Sylvain L. Delage. Modélisation Large Bande de la Dispersion Fréquentielle de la Conductance de sortie et de la Transconductance dans les HEMTs AlInN/GaN. Journées Nationales Microondes, May 2013, Paris, France. pp.Id263, 2013. <hal-00860965>
  • R. Aubry, Y. Cordier, J.C. De Jaeger, N. Grandjean, M. Rocchi, et al.. [Invité] Etat de l'art et défis du GaN pour l'électronique. 14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, Table ronde, 2013, Evian, France. <hal-00878877>
  • S Karboyan, Jean-Guy Tartarin, N Labat, B. Lambert. Gate and drain low frequency noise of ALGaN/GaN HEMTs featuring high and low gate leakage currents. 22nd International Conference on Noise and Fluctuations (ICNF 2013), Jun 2013, Montpellier, France. IEEE, 22nd International Conference on Noise and Fluctuations (ICNF 2013), 2013, <10.1109/ICNF.2013.6578954>. <hal-01343429>
  • Jean-Guy Tartarin, S Karboyan, François Olivié, Guilhem Astre, Laurent Bary, et al.. I-DLTS, Electrical Lag and Low Frequency Noise measurements of Trapping effects in AlGaN/GaN HEMT for reliability studies. European Microwave Integrated Circuits Conference (EuMIC 2011), Oct 2011, Manchester, United Kingdom. IEEE, 2011 European Microwave Integrated Circuits Conference (EuMIC), pp.438-441, <http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=6102866&abstractAccess=no&userType=inst>. <hal-01343977>
  • Jean-Guy Tartarin. Diagnostic Tools For Accurate Reliability Investigations of GaN Devices. 21st International Conference on Noise and Fluctuations (ICNF 2011) by Institute of Electrical and Electronics Engineers ( IEEE ), Jun 2011, Toronto, Canada. <hal-00907447>
  • Rémi Corbière, Bruno Louis, Jean-Guy Tartarin. A novel active variable gain X-Band amplifier in SiGe technology. International Microwave Symposium (IMS 2010), May 2010, Anaheim, CA, United States. IEEE, Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International pp.312-315, <10.1109/MWSYM.2010.5515104>. <hal-01343955>
  • Guilhem Astre, Jean-Guy Tartarin, B Lambert. Trapping Related Degradation Effects in AlGaN/GaN HEMT. EuMC 2010, Sep 2010, Paris, France. 2010, Microwave Conference (EuMC), 2010. <hal-01343334>
  • Mohamed Cheikh, Jacques David°, Jean-Guy Tartarin, Sébastien Kessler, Alexis Morin. RF Source Characterization Of Tire Pressure Monitoring System. European Wireless Technology Conference (EuWIT 2009), Sep 2009, Rome, Italy. IEEE, European Wireless Technology Conference 2009 EuWIT 2009, pp.176-179, 2009. <hal-01343350>
  • Guilhem Astre, Jean-Guy Tartarin, Jacques Chevallier, S Delage. Increased reliability of AlGaN/GaN HEMTs versus temperature using deuterium. EuMC 2008, Oct 2008, Amsterdam, Netherlands. Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European 2008, <10.1109/EMICC.2008.4772260>. <hal-01343347>
  • Olivier Llopis, Sébastien Gribaldo, Cédric Chambon, Bertrand Onillon, Jean-Guy Tartarin, et al.. Recent evolutions in low phase noise microwave sources and related problems of noise modeling. 19th International Conference on Noise and Fluctuations - ICNF2007, Sep 2007, Tokyo, Japan. American Institute of Physics, 922, pp.353-358, 2007. <hal-00177027>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Jean-Laurent Grondin, Laurent Bary, Jaime Mimila-Arroyo, et al.. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization. M. Tacano, Y. Yamamoto, M. Nakao. International Conf. on Noise and Fluctuations, Sep 2007, Tokyo, Japan. American Institute of Physics, pp.163-166, 2007, ISBN 978-0-7354-0432-8. <hal-00272560>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Jean-Laurent Grondin, Laurent Bary, Jaime Mimila-Arroyo, et al.. Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization. 19th International Conference on Noise and Fluctuations (ICNF 2007), Sep 2007, Tokyo, Japan. AIP, NOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007, 2007, <10.1063/1.2759658>. <hal-01343422>
  • Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Laurent Bary, J. Rayssac, E. Morvan, et al.. Design of a X-band GaN oscillator : from the low frequency noise device characterization and large signal modeling to circuit design. 2006, IEEE, Piscataway, NJ, USA, 4 pp., 2006. <hal-00128228>
  • Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, Laurent Bary, J. Rayssac, S Delage, et al.. ROBUST GAN ELECTRONICS FOR HIGHLY RELIABLE BF AND RF ANALOG SYSTEMS IN AEROSPACE APPLICATIONS. Micro-Nano-Technologies for Space Application (CANEUS 2006), Aug 2006, Toulouse, France. CANEUS, MNT for Aerospace Application, pp.81-87, 2006, CANEUS 2006, MNT for Space Application. <10.1115/CANEUS2006-11012>. <hal-01343284>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Laurent Bary, C. Chambon, Sébastien Gribaldo, et al.. Low frequency and linear high frequency noise performances of AlGaN/GaN grown on SiC substrate. 2005, IEEE, Piscataway, NJ, USA, pp.277-280, 2005. <hal-00154917>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, S Delage, et al.. Low Frequency Noise Of AlGaN/GaN HEMT Grown On Al2O3 , Si And SiC Substrates. 18th International Conference on Noise and Fluctuations (ICNF 2005), Sep 2005, Salamanque, Spain. NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations ICNF 2005, 2005, <10.1063/1.2036754>. <hal-01343434>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, et al.. Low frequency noise and transport mechanisms in AlGaN/GaN HEMT devices. European Microwave Week, 2004, Amsterdam, Netherlands. 2004. <hal-00141963>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, Robert Plana, et al.. Bruit dans les nouveaux composants et matériaux ou bruit fiabilité. Workshop Action Spécifique Bruit : Bruit en régime linéaire et non-linéaire dans les composants et circuits de télécommunications, 2004, La Grande Motte, France. 2004. <hal-00141964>
  • Jean-Guy Tartarin, Geoffroy Soubercaze-Pun, Abdelali Rennane, Laurent Bary, J.C. De Jaeger, et al.. Using low frequency noise characterization of AlGaN/GaN HEMT as a tool for technology assessment and failure prediction . 2004, SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, pp.296-306, 2004. <hal-00141968>
  • Laurent Bary, E. Angeli, Abdelali Rennane, Geoffroy Soubercaze-Pun, Jean-Guy Tartarin, et al.. Low frequency noise behaviour in GaN HEMT's on silicon substrate. 2004, SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, pp.286-295, 2004. <hal-00141967>
  • Abdelali Rennane, Laurent Bary, Jean-Guy Tartarin, Y. Guhel, C. Gaquiere, et al.. Low frequency noise behaviour in AlGaN/GaN HEMT's. 12th European Workshop on Heterostructure Technology, heTech 2003, 2003, San Rafael, Spain. 2003. <hal-00146693>

Autre publication1 document

  • Jean-Guy Tartarin. LA TECHNOLOGIE GAN ET SES APPLICATIONS POUR L'ELECTRONIQUE ROBUSTE, HAUTE FREQUENCE ET DE PUISSANCE. Rapport LAAS n° 08644. veille technologique sur la filière GaN. 2008. <hal-00341009>

HDR1 document

  • Jean-Guy Tartarin. LE BRUIT DE FOND ÉLECTRIQUE DANS LES COMPOSANTS ACTIFS, CIRCUITS ET SYSTÈMES DES HAUTES FRÉQUENCES : DES CAUSES VERS LES EFFETS. Sciences de l'ingénieur [physics]. Université Paul Sabatier - Toulouse III, 2009. <tel-00539034>