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Jean-François MICHAUD


Jean-François MICHAUD was born in 1976. In 2004, he received the Ph.D. degree in electronics, from the University of Rennes 1. Since September 2006, he is an associate professor at the University of Tours. His current research, in the GREMAN laboratory, focuses mainly on silicon carbide for electronic and MEMS applications. He is the GREMAN responsible person for the ANDRA project H2MEMS (resonant microsystems for hydrogen detection) leaded by IMS Bordeaux and the ECSEL-H2020 WInSiC4AP (Wide band gap Innovative SiC for Advanced Power) coordinated by Distretto Tecnologico Sicilia Micro E Nano Sistemi SRL (Italie)


Journal articles19 documents

  • Luis Iglesias, Priyadarshini Shanmugam, Jean-François Michaud, Daniel Alquier, Dominique Certon, et al.. Proof of concept and preliminary results of gas detection by measuring the admittance at the resonance and anti-resonance of an uncoated CMUT. Frontiers of Mechanical Engineering, 2020, ⟨10.3389/fmech.2020.00014⟩. ⟨hal-02505916⟩
  • Jaweb Messaoud, Jean-François Michaud, Dominique Certon, Massimo Camarda, Nicolò Piluso, et al.. Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates. Micromachines, MDPI, 2019, 10, ⟨10.3390/mi10120801⟩. ⟨hal-02374829⟩
  • Rami Khazaka, Jean-François Michaud, Philippe Vennegues, Daniel Alquier, Marc Portail. Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes. Applied Physics Letters, American Institute of Physics, 2017, 110 (8), ⟨10.1063/1.4977033⟩. ⟨hal-01741061⟩
  • Emilie Bahette, Jean-François Michaud, Dominique Certon, Dominique Gross, Marie Perroteau, et al.. Low temperature capacitive micromachined ultrasonic transducers (cMUTs) on glass substrate. Journal of Micromechanics and Microengineering, IOP Publishing, 2016, 26 (11), ⟨10.1088/0960-1317/26/11/115023⟩. ⟨hal-01741067⟩
  • Rami Khazaka, Jean-François Michaud, Philippe Vennegues, Luan Nguyen, Daniel Alquier, et al.. On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction. Journal of Applied Physics, American Institute of Physics, 2016, 120, pp.185306 - 141907. ⟨10.1063/1.4967741⟩. ⟨hal-01740987⟩
  • Rami Khazaka, Marius Grundmann, Marc Portail, Philippe Vennegues, Marcin Zielinski, et al.. Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001). Applied Physics Letters, American Institute of Physics, 2016, 108 (1), ⟨10.1063/1.4939692⟩. ⟨hal-01741073⟩
  • Rami Khazaka, Marc Portail, Philippe Vennéguès, Daniel Alquier, Jean-François Michaud. Direct Insight into Grains Formation in Si Layers Grown on 3C-SiC by Chemical Vapor Deposition. Acta Materialia, Elsevier, 2015, 98, pp.336-342. ⟨10.1016/j.actamat.2015.07.052⟩. ⟨hal-01784770⟩
  • Rami Khazaka, Emilie Bahette, Marc Portail, Daniel Alquier, Jean-François Michaud. Toward high-quality 3C–SiC membrane on a 3C–SiC pseudo-substrate. Materials Letters, 2015, 160, pp.28-30. ⟨10.1016/j.matlet.2015.07.071⟩. ⟨hal-01784769⟩
  • Emilie Bahette, Jean-François Michaud, Dominique Certon, Dominique Gross, Daniel Alquier. Progresses in cMUT Device Fabrication Using Low Temperature Processes. Journal of Micromechanics and Microengineering, IOP Publishing, 2014, 24 (4), pp.045020. ⟨10.1088/0960-1317/24/4/045020⟩. ⟨hal-01831020⟩
  • R. Boubekri, E. Cambril, L. Couraud, L. Bernardi, A. Madouri, et al.. Electrothermally driven high-frequency piezoresistive SiC cantilevers for dynamic atomic force microscopy. Journal of Applied Physics, American Institute of Physics, 2014, 116, pp.054304. ⟨10.1063/1.4891833⟩. ⟨hal-01715334⟩
  • Jean-François Michaud, Marc Portail, Thierry Chassagne, Marcin Zielinski, Daniel Alquier. Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate. Microelectronic Engineering, Elsevier, 2013, 105, pp.65-67. ⟨10.1016/j.mee.2013.01.010⟩. ⟨hal-01810899⟩
  • Gaël Gautier, Frédéric Cayrel, Marie Capelle, Jérôme Billoue, Xi Song, et al.. Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩. ⟨hal-01810904⟩
  • M. Zielinski, Jean-François Michaud, Sai Jiao, Thierry Chassagne, Anne-Elisabeth Bazin, et al.. Experimental Observation and Analytical Model of the Stress Gradient Inversion in 3C-SiC Layers on Silicon. Journal of Applied Physics, American Institute of Physics, 2012, 111 (5), pp.053507. ⟨10.1063/1.3687370⟩. ⟨hal-01810913⟩
  • Sai Jiao, Jean-François Michaud, Marc Portail, A. Madouri, Thierry Chassagne, et al.. A New Approach for AFM Cantilever Elaboration with 3C-SiC. Materials Letters, 2012, 77, pp.54-56. ⟨10.1016/j.matlet.2012.02.128⟩. ⟨hal-01810915⟩
  • J.F. Michaud, Régis Rogel, Tayeb Mohammed-Brahim, Michel Sarret. CW argon laser crystallization of silicon films: structural properties. Journal of Non-Crystalline Solids, Elsevier, 2006, 352 (9-20), pp.998-1002. ⟨hal-00437319⟩
  • J.F. Michaud, Christophe Cordier, Abdelmalek Boukhenoufa, Laurent Pichon. Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions. Solid-State Electronics, Elsevier, 2005, 49, issue 8, pp 1376-1380. ⟨hal-00013581⟩
  • J.F. Michaud, Régis Rogel, Tayeb Mohammed-Brahim, Michel Sarret, Olivier Bonnaud. Solid phase post-treatment of polysilicon films by a continuous argon laser. Thin Solid Films, Elsevier, 2005, 487, pp.81-84. ⟨hal-00772824⟩
  • Christophe Cordier, Abdelmalek Boukhenoufa, Laurent Pichon, Jean-François Michaud. Low frequency noise model in N-MOS transistors operating from sub-threshold to above-threshold regions. Solid-State Electronics, Elsevier, 2005, 49 (8), pp.1376-1380. ⟨hal-00772760⟩
  • Amar Saboundji, Jean-François Michaud, Tayeb Mohammed-Brahim, France Le Bihan, G. Andrä, et al.. Polysilicon thin-film transistors based on frequency doubled cw-Nd:YVO4 laser crystallized silicon. Solid State Phenomena, Trans Tech Publications Ltd 2003, 93, pp.55-60. ⟨hal-00085671⟩

Conference papers17 documents

  • Luis Iglesias, Priyadarshini Shanmugam, Jean-François Michaud, Daniel Alquier, Dominique Certon, et al.. Cmut Time of Flight Gas Sensor By Phase Shift Measurement. 18th International Meeting on Chemical Sensors IMCS 2020, 2020, Montreal, France. ⟨10.1149/MA2020-01312323mtgabs⟩. ⟨hal-02476748⟩
  • Isabelle Dufour, Luis Iglesias Hernandez, Priyadarshini Shanmugam, Jean-François Michaud, Daniel Alquier, et al.. Resonant MEMS for Gas Detection Based on the Measurements of Physical Properties of Gas Mixtures. 2020 Joint Conference of the IEEE International Frequency Control Symposium and the IEEE International Symposium on Applications of Ferroelectrics, Jul 2020, Keystone (virtual conference), United States. pp.1-3, ⟨10.1109/IFCS-ISAF41089.2020.9234908⟩. ⟨hal-02481928⟩
  • Luis Iglesias, Priyadarshini Shanmugam, Steven Pena, Jean-François Michaud, Daniel Alquier, et al.. Time of flight gas sensing with capacitive micro-machined ultrasonic transducers (CMUT’s). Journées de l’école doctorale SPI Université de Bordeaux, Mar 2019, Bordeaux, France. ⟨hal-02090954⟩
  • Luis Iglesias, Priyadarshini Shanmugam, Steven Pena, Jean-François Michaud, Daniel Alquier, et al.. CMUT enabled binary mixture gas sensing through time of flight measurement. The 16th International Workshop on Nanomechanical Sensors, 2019, Lausanne, Switzerland. ⟨hal-02191746⟩
  • Luis Iglesias, Priyadarshini Shanmugam, Steven Pena, J.-F. Michaud, Daniel Alquier, et al.. Gas detection in binary mixture by time of flight measurement made by the use of CMUTs. Workshop MUT 2019, 2019, Grenoble, France. ⟨hal-02191737⟩
  • Luis Iglesias Hernandez, Isabelle Dufour, Priyadarshini Shanmugam, Jean-François Michaud, Daniel Alquier, et al.. High Frequency Gas Detection With an Uncoated CMUT Array by Impedance Resonant Frequency Measurement. 2019 IEEE SENSORS, Oct 2019, Montreal, Canada. pp.1-4, ⟨10.1109/SENSORS43011.2019.8956767⟩. ⟨hal-02476746⟩
  • Priyadarshini Shanmugam, Luis Iglesias, Jean-François Michaud, Isabelle Dufour, Daniel Alquier, et al.. CMUT Based Air Coupled Transducers for Gas-Mixture Analysis. 2018 IEEE International Ultrasonics Symposium (IUS), Oct 2018, Kobe, Japan. pp.1-4, ⟨10.1109/ULTSYM.2018.8579789⟩. ⟨hal-02013282⟩
  • Jean-François Michaud, Marcin Zielinski, Jaweb Ben Messaoud, Thierry Chassagne, Marc Portail, et al.. Influence of Aluminum Incorporation on Mechanical Properties of 3C-SiC Epilayers. International Conference on Silicon Carbide and Related Materials, Sep 2017, Washington, United States. pp.318-321, ⟨10.4028/www.scientific.net/MSF.924.318⟩. ⟨hal-02017420⟩
  • Jean-François Michaud, Rami Khazaka, M. Portail, G. Andrä, J. Bergmann, et al.. Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration. Conférence MRS Spring Meeting, Apr 2016, Phoenix, United States. pp.3649 - 3654, ⟨10.1557/adv.2016.327⟩. ⟨hal-01741555⟩
  • Abdelmalek Boukhenoufa, Laurent Pichon, Christophe Cordier, Bogdan Cretu, Lehui Ding, et al.. Apparent noise parameter behavior in n-MOS transistors operating from subthreshold to above-threshold regions. Proceedings of the 18th International Conference on noise in Physical Systems and 1/f Fluctuation ; ICNF 2005 ; CP780 Noise and Fluctuations, Sep 2005, Salamanca, Spain. pp.319-322. ⟨hal-00773430⟩
  • J.F. Michaud, Regis Rogel, Tayeb Mohammed-Brahim, Michel Sarret. Cw Argon Laser Crystallization of Silicon Films : Structural properties. Int. Conf. Amorphous and Nanocrystalline Semiconductors (ICANS'21), Sep 2005, Lisbonne, Portugal. ⟨hal-00776201⟩
  • Jean-François Michaud. Cristallisation par laser argon continu de silicium amorphe déposé sur substrat de verre. JNRDM, May 2004, Marseille, France. pp.135-137. ⟨hal-00906104⟩
  • G. Le Meur, B. Bourouga, J.F. Michaud, Tayeb Mohammed-Brahim. Modeling to the heating of a silicon thin film on a glass substrate during a cw argon laser crystallization process. 6th International Symposium on Heat Transfer, Jun 2004, pekin, China. pp.137-142. ⟨hal-00848465⟩
  • Jean-François Michaud, Amar Saboundji, Regis Rogel, Tayeb Mohammed-Brahim, Michel Sarret, et al.. Continuous Argon Laser Crystallization of Patterned Silicon. The 11th International Displays Workshops IDW'04, Dec 2004, Niigata, Japan. ⟨hal-00870482⟩
  • Amar Saboundji, Jean-François Michaud, Tayeb Mohammed-Brahim, Olivier Bonnaud, G. Andrä, et al.. Impact of the use of the second harmonic CW Nd:YVO4 laser to crystallize amorphous silicon films on the TFT performance. Proceedings of International Conference on AM-LCD 2004, Aug 2004, Tokyo, Japan. ⟨hal-00870772⟩
  • Jean-François Michaud, Regis Rogel, Tayeb Mohammed-Brahim, Michel Sarret, Olivier Bonnaud. Solid phase post-treatment of polysilicon films by a continuous argon laser. POLYSE 2004, Sep 2004, Potdam, Germany. ⟨hal-00870429⟩
  • Jean-François Michaud. Cristallisation par laser continu de silicium amorphe déposé sur substrat de verre LPCVD. JNRDM, May 2003, Toulouse, France. Proceedings p 299. ⟨hal-00921466⟩

Book sections1 document

  • Jean-François Michaud, Marc Portail, Daniel Alquier. 3C-SiC — From Electronic to MEMS Devices. Advanced Silicon Carbide Devices and Processing, InTech, 2015. ⟨hal-02132700⟩

Patents2 documents

  • Luis Iglesias Hernandez, Dominique Certon, Jean-François Michaud, Priyadarshini Shanmugam, Laurent Colin, et al.. Dispositif et procédé de détection d’hydrogène. France, N° de brevet: FR2009222. 2020. ⟨hal-02978825⟩
  • Luis Iglesias Hernandez, Dominique Certon, Jean-François Michaud, Priyadarshini Shanmugam, Laurent Colin, et al.. Dispositif et procédé d’identification d’une contamination gazeuse. France, N° de brevet: FR2009223. 2020. ⟨hal-02978837⟩