Détermination de la pression d'arsenic minimale pour l'épitaxie par jets moléculaires de Ga1 - yInyAs/GaAs et Ga1 - xAlxAs
J.C. Harmand
,
F. Alexandre
,
J. Beerens
Article dans une revue
istex
jpa-00245615v1
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Silicon nanowires: Diameter dependence of growth rate and delay in growth
F. Dhalluin
,
T. Baron
,
P. Ferret
,
B. Salem
,
P. Gentile
,
et al.
Applied Physics Letters , 2010, pp.96 (13), art. no. 133109
Article dans une revue
hal-00623435v1
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Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence
Hung-Ling Chen
,
Chalermchai Himwas
,
Andrea Scaccabarozzi
,
Pierre Râle
,
Fabrice Oehler
,
et al.
Article dans une revue
hal-01972834v1
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HETONAN project: high efficiency tandem solar cells based on III-V nanowires on silicon
Alain Fave
,
Marco Vettori
,
Céline Chevalier
,
Nicolas Chauvin
,
Philippe Regreny
,
et al.
Journées Nationales des Nanofils Semiconducteurs (J2N 2017) , Nov 2017, Grenoble, France
Communication dans un congrès
hal-02071013v1
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Elaboration of III-V top cell for tandem cell with Silicon
Amadeo Michaud
,
Ahmed Ben Slimane
,
Adrien Bercegol
,
Raphaël Lachaume
,
Jean-Christophe Harmand
,
et al.
Communication dans un congrès
hal-03084896v1
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Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser
Salvatore Pes
,
Kevin Audo
,
Cyril Paranthoen
,
Christophe Levallois
,
Nicolas Chevalier
,
et al.
Conference on Lasers and Electro-Optics (CLEO 2017) , May 2017, San Jose, United States. OSA (ISBN: 978-1-943580-27-9), OSA Publishing, Tuesday Posters Session (JTu5A), pp. JTu5A.109, 2017, CLEO: Applications and Technology 2017.
⟨10.1364/CLEO_AT.2017.JTu5A.109⟩
Poster de conférence
hal-01532491v1
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GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
Capucine Tong
,
Amaury Delamarre
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
et al.
Article dans une revue
hal-03815027v1
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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Quang Chieu Bui
,
Ludovic Largeau
,
Martina Morassi
,
Nikoletta Jegenyes
,
Olivia Mauguin
,
et al.
Article dans une revue
hal-04278723v1
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GaN nanowires based piezoelectric generators
Noelle Gogneau
,
Pascal Chrétien
,
Nicolas Jamond
,
L Lu
,
Nicoletta Jegenyes
,
et al.
13th International Conference on Nitride Semiconductors - ICNS13 , Jul 2019, Bellevue, United States
Communication dans un congrès
hal-02154041v1
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Impact of the GaN nanowire polarity on energy harvesting
Noelle Gogneau
,
Pascal Chrétien
,
Elisabeth Galopin
,
Stephane Guilet
,
Laurent Travers
,
et al.
Article dans une revue
hal-01096617v1
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Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls
Adrian Díaz Álvarez
,
Nemanja Peric
,
Nathali Alexandra Franchina Vergel
,
Jean-Philippe Nys
,
Maxime Berthe
,
et al.
Article dans une revue
hal-02332261v1
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In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene
Camille Barbier
,
Tao Zhou
,
Gilles Renaud
,
Patrick Le Fèvre
,
Frank Glas
,
et al.
Article dans une revue
hal-03008961v1
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Quantitative Assessment of Carrier Density by Cathodoluminescence (2): GaAs nanowires
Hung-Ling Chen
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
Jean-Christophe Harmand
,
et al.
2019
Pré-publication, Document de travail
hal-02411467v1
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Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusion
Zhaslan Baraissov
,
Federico Panciera
,
Laurent Travers
,
Jean-Christophe Harmand
,
Utkur Mirsaidov
Article dans une revue
hal-02401188v1
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Piezoelectric conversion with InGaN/GaN nanowire heterostructures
Nicoletta Jegenyes
,
Martina Morassi
,
Pascal Chrétien
,
Laurent Travers
,
L Lu
,
et al.
12th International Conference on Nitride Semiconductors - ICNS 12 , Jul 2017, Strasbourg, France
Communication dans un congrès
hal-01591417v1
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Magnetic two-dimensional field effect transistor
Andre Raymond
,
Christophe Chaubet
,
Boris Chenaud
,
Adrien Delgard
,
I. Bisotto
,
et al.
Article dans une revue
hal-01692837v1
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Crystallization of Si Templates of Controlled Shape, Size, and Orientation: Toward Micro- and Nanosubstrates
Yann Cohin
,
Frank Glas
,
Andrea Cattoni
,
Sophie Bouchoule
,
Olivia Mauguin
,
et al.
Article dans une revue
hal-01139953v1
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Piezo-Generator Integrating Vertical Array of GaN Nanowires: A new alternative energy source for nomad electronics
Noëlle Gogneau
,
Nicolas Jamond
,
Laurent Travers
,
Jean-Christophe Harmand
,
Frank Glas
,
et al.
WTE 2016 , Oct 2016, Paris-Saclay, France
Communication dans un congrès
hal-01631168v1
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Giant spin-dependent photo-conductivity in GaAsN dilute nitride semiconductor
A. Kunold
,
Andrea Balocchi
,
F. Zhao
,
Naoufel Ben Abdallah
,
J. C. Harmand
,
et al.
Article dans une revue
hal-00631098v1
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Class-A operation of an optically-pumped 1.6 µm-emitting quantum dash-based vertical-external-cavity surface-emitting laser on InP
Salvatore Pes
,
Cyril Paranthoen
,
Christophe Levallois
,
Nicolas Chevalier
,
Cyril Hamel
,
et al.
Article dans une revue
hal-01533213v1
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Optical properties of GaN and GaN/AlN nanowires: the effect of doping and structural defects
L. Rigutti
,
F. Fortuna
,
M. Tchernycheva
,
A. de Luna Bugallo
,
G. Jacopin
,
et al.
8th International Conference on Nitride Semiconductors (ICNS8) , Oct 2009, Jeju, South Korea. pp.2233-2235,
⟨10.1002/pssc.200983472⟩
Communication dans un congrès
istex
in2p3-00724691v1
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Investigations on GaAsSbN/GaAs quantum wells for 1.3–1.55μm emission
J.C Harmand
,
G Ungaro
,
J. Ramos
,
E.V.K Rao
,
G. Saint-Girons
,
et al.
Article dans une revue
istex
hal-01939856v1
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Design of III-V nanowires based micosources vertically coupled to a Si waveguide for optical interconnects
Zhen Lin
,
Michel Gendry
,
J.C. Harmand
,
Xavier Letartre
CSW 2014 , 2014, Montpellier, France
Communication dans un congrès
hal-01489859v1
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High Sensitivity Piezogenerator Based on GaN Nanowires
L. Lu
,
N. Jamond
,
E. Lefeuvre
,
Pascal Chrétien
,
F. Houzé
,
et al.
Communication dans un congrès
hal-01591362v1
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Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure
J. Jawher
,
Mehrez Oueslati
,
Vincent Sallet
,
Jean Christophe Harmand
,
R. Chtourou
Article dans une revue
hal-03579487v1
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Nanoscale electrical analyses of axial-junction GaAsP nanowires for solar cell applications
Omar Saket
,
Chalermchai Himwas
,
Valerio Piazza
,
Fabien Bayle
,
Andrea Cattoni
,
et al.
Article dans une revue
hal-02992090v1
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In Situ X-ray Diffraction Study of GaN Nucleation on Transferred Graphene
Camille Barbier
,
Tao Zhou
,
Gilles Renaud
,
Olivier Geaymond
,
Patrick Le Fèvre
,
et al.
Article dans une revue
hal-04278719v1
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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors
Quang Chieu Bui
,
Ludovic Largeau
,
Martina Morassi
,
Nikoletta Jegenyes
,
Olivia Mauguin
,
et al.
Article dans une revue
hal-02385613v1
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Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
Martina Morassi
,
Ludovic Largeau
,
Fabrice Oehler
,
Hyun-Gyu Song
,
Laurent Travers
,
et al.
Article dans une revue
hal-02385645v1
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Quantitative Assessment of Carrier Density by Cathodoluminescence. II. Ga As Nanowires
Hung-Ling Chen
,
Romaric de Lépinau
,
Andrea Scaccabarozzi
,
Fabrice Oehler
,
Jean-Christophe Harmand
,
et al.
Article dans une revue
hal-03435524v1
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