Nombre de documents

19

CV de Jean-Baptiste Rodriguez


Communication dans un congrès9 documents

  • N. Hattasan, Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournié, Dries Van Thourhout, et al.. Heterogeneous GaSb/SOI mid-infrared photonic integrated circuits for spectroscopic applications. Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. 7945, pp.79451K, 2011, <10.1117/12.874659>. <hal-00641358>
  • Cyril Cervera, Rachid Taalat, Philippe Christol, Jean-Baptiste Rodriguez, K. Jaworowicz, et al.. Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode. Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, FL, United States. 8012, pp.801213, 2011, <10.1117/12.882133>. <hal-00641337>
  • Isabelle Ribet-Mohamed, K. Jaworowicz, David Tayibi, Cyril Cervera, Rachid Taalat, et al.. Noise performance analysis of MWIR InAs/GaSb superlattice pin photodiodes. Conference on Infrared Technology and Applications XXXVII, Apr 2011, Orlando, FL, United States. 8012, pp.80120Z, 2011, <10.1117/12.883794>. <hal-00641342>
  • Philippe Christol, Cyril Cervera, Jean-Baptiste Rodriguez, K. Jaworowicz, Isabelle Ribet-Mohamed. Asymmetric InAs/GaSb superlattice pin photodiode to improve temperature operation. Conference on Quantum Sensing and Nanophotonic Devices VIII, Jan 2011, San Francisco, CA, United States. 7945, pp.79451H, 2011, <10.1117/12.869631>. <hal-00641343>
  • R. Chaghi, Y. Cuminal, H. Aït-Kaci, Jean-Baptiste Rodriguez, P. Grech, et al.. Improvement material performances of InAs/GaSb superlattice photodiodes. EXMATEC, Jun 2008, Łódź, Poland. <hal-00401337>
  • Leszek Konczewicz, Sylvie Contreras, H. Aït-Kaci, Y. Cuminal, Jean-Baptiste Rodriguez, et al.. Effect of pressure on electrical properties of short period InAs/GaSb superlattice. 13th International Conference on High Pressure Semiconductor Physics (HPSP-13), Jul 2008, Fortaleza (BRAZIL), France. 246 (3), pp.643-647, 2009. <hal-00401354>
  • Philippe Christol, Yvan Cuminal, Jean-Baptiste Rodriguez, André Joullié, V.K. Kononenko, et al.. Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications.. 14th International Symposium nanostrucutres : Physics and Technology., Jun 2006, St Petersbourg., Russia. 2006. <hal-00103333>
  • Yvan Cuminal, Gerald Ferblantier, Philippe Christol, Jean Baptiste Rodriguez, André Joullié. Photodétecteurs infrarouges non redroidis à superréseaux InAs/GaSb : modélisation et caractérisation optique.. 11eme Journées Nano-Micro Electronique et Optoélectronique, Apr 2006, Aussois, France. 2006. <hal-00102206>
  • Yvan Cuminal, Philippe Christol, Jean-Baptiste Rodriguez, André Joullié. Multiphysic FEMLAB modelling to evaluate mid-infrared photonic detector performances. Nov 2005, COMSOL Multiphysic, pp.109-112, 2005. <hal-00102053v4>

Article dans une revue8 documents

  • Jean-Rémy Reboul, Laurent Cerutti, Jean-Baptiste Rodriguez, Pierre Grech, Eric Tournié. Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si. Applied Physics Letters, American Institute of Physics, 2011, 99 (12), pp.121113. <10.1063/1.3644983>. <hal-00641322>
  • K. Jaworowicz, Isabelle Ribet-Mohamed, Cyril Cervera, Jean-Baptiste Rodriguez, Philippe Christol. Noise Characterization of Midwave Infrared InAs/GaSb Superlattice pin Photodiode. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2011, 23 (4), pp.242-244. <10.1109/LPT.2010.2093877>. <hal-00641330>
  • Cyril Cervera, K. Jaworowicz, H. Aït-Kaci, R. Chaghi, Jean-Baptiste Rodriguez, et al.. Temperature dependence performances of InAs/GaSb superlattice photodiode. INFRARED PHYSICS & TECHNOLOGY, 2011, 54 (3), pp.258-262. <10.1016/j.infrared.2010.12.025>. <hal-00641327>
  • A. Khoshakhlagh, F. Jaeckel, C. Hains, Jean-Baptiste Rodriguez, L.R. Dawson, et al.. Background carrier concentration in midwave and longwave InAs/GaSb type II superlattices on GaAs substrate. Applied Physics Letters, American Institute of Physics, 2010, 97 (5), pp.051109. <10.1063/1.3457908>. <hal-00641375>
  • Jean-Baptiste Rodriguez, Cyril Cervera, Philippe Christol. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement. Applied Physics Letters, American Institute of Physics, 2010, 97 (25), pp.251113. <10.1063/1.3529940>. <hal-00641365>
  • Laurent Cerutti, Jean-Baptiste Rodriguez, Eric Tournie. GaSb-Based Laser, Monolithically Grown on Silicon Substrate, Emitting at 1.55 mu m at Room Temperature. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2010, 22 (8), pp.553-555. <10.1109/LPT.2010.2042591>. <hal-00539210>
  • Elena Plis, Jean-Baptiste Rodriguez, G. Balakrishnan, Y.D. Sharma, H.S. Kim, et al.. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate. Semiconductor Science and Technology, IOP Publishing, 2010, 25 (8), pp.085010. <10.1088/0268-1242/25/8/085010>. <hal-00641377>
  • E. Luna, F. Ishikawa, B. Satpati, Jean-Baptiste Rodriguez, Eric Tournie, et al.. Interface properties of (Ga,In)(N,As) and (Ga,In)(As,Sb) materials systems grown by molecular beam epitaxy. Journal of Crystal Growth, Elsevier, 2009, 311, pp.1739-1744. <10.1016/j.jcrysgro.2008.10.039>. <hal-00462048>

Pré-publication, Document de travail1 document

  • Philippe Christol, L. Konczewicz, Yvan Cuminal, Jean-Baptiste Rodriguez, André Joullié. Electrical properties of short period InAs/GaSb superlattice.. 2006. <hal-00103689v2>

Thèse1 document

  • Jean-Baptiste Rodriguez. Superréseaux InAs/GaSb réalisés par épitaxie par jets moléculaires pour photodétection à 300 K dans le moyen-infrarouge. Micro et nanotechnologies/Microélectronique. Université Montpellier II - Sciences et Techniques du Languedoc, 2005. Français. <tel-00618583>