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Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop

Daniel Myers , Kristina Gelžinytė , Abdullah Alhassan , Lucio Martinelli , Jacques Peretti , et al.
Physical Review B, 2019, 100 (12), pp.125303. ⟨10.1103/PhysRevB.100.125303⟩
Article dans une revue hal-02360524v1

Apertureless near-field optical microscopy: A study of the local tip field enhancement using photosensitive azobenzene-containing films

Renaud Bachelot , Fekhra H’dhili , Dominique Barchiesi , Gilles Lerondel , Radouane Fikri , et al.
Journal of Applied Physics, 2003, 94 (3), pp.2060-2072. ⟨10.1063/1.1585117⟩
Article dans une revue hal-02292883v1

The formation of the Pb/Si(111) interface studied by in situ ellipsometry and surface spectroscopy

G Quentel , G Gauch , Alain Jean Degiovanni , W Yang , J. Peretti , et al.
Physica Scripta, 1988, 38 (2), pp.169-171
Article dans une revue hal-01963922v1

Polarized Luminescence of Anisotropic LaPO 4 :Eu Nanocrystal Polymorphs

Élodie Chaudan , Jongwook Kim , Sandrine Tusseau-Nenez , Philippe Goldner , Oscar Malta , et al.
Journal of the American Chemical Society, 2018, 140 (30), pp.9512-9517. ⟨10.1021/jacs.8b03983⟩
Article dans une revue hal-02360528v1

Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal / oxide / semiconductor junction

Nicolas Rougemaille , Driss Lamine , G. Lampel , Y. Lassailly , J. Peretti
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2008, 77, pp.094409
Article dans une revue hal-00971594v1

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

Daniel Myers , Kristina Gelžinytė , Wan Ying Ho , Justin Iveland , Lucio Martinelli , et al.
Journal of Applied Physics, 2018, 124 (5), pp.055703. ⟨10.1063/1.5030208⟩
Article dans une revue hal-02360526v1

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy

W. Hahn , J.-M. Lentali , P. Polovodov , N. Young , S. Nakamura , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98 (4), ⟨10.1103/PhysRevB.98.045305⟩
Article dans une revue hal-02324900v1
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Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Tanay Tak , Cameron Johnson , Wan Ying Ho , Feng Wu , Mylène Sauty , et al.
Physical Review Applied, 2023, 20 (6), pp.064045. ⟨10.1103/PhysRevApplied.20.064045⟩
Article dans une revue hal-04365353v1

Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography

Jongwook Kim , Sébastien Michelin , Michiel Hilbers , Lucio Martinelli , Elodie Chaudan , et al.
Nature Nanotechnology, 2017, 12 (9), pp.914-919. ⟨10.1038/nnano.2017.111⟩
Article dans une revue hal-02104842v1
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes

Chi-Kang Li , Marco Piccardo , Li-Shuo Lu , Svitlana Mayboroda , Lucio Martinelli , et al.
Physical Review B, 2017, 95 (14), pp.144206. ⟨10.1103/PhysRevB.95.144206⟩
Article dans une revue hal-02360581v1
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Measurement of minority carrier diffusion length in p -GaN using electron emission spectroscopy (EES)

Wan Ying Ho , Yi Chao Chow , Shuji Nakamura , Jacques Peretti , Claude Weisbuch , et al.
Applied Physics Letters, 2023, 122 (21), ⟨10.1063/5.0150029⟩
Article dans une revue hal-04306950v1
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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Daniel J Myers , Andrew C Espenlaub , Kristina Gelzinyte , Erin C Young , Lucio Martinelli , et al.
Applied Physics Letters, 2020, 116 (9), pp.091102. ⟨10.1063/1.5125605⟩
Article dans une revue hal-03051860v1

Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics

Zhesheng Chen , Christine Giorgetti , Jelena Sjakste , Raphael Cabouat , Valérie Véniard , et al.
Physical Review B, 2018, 97 (24), ⟨10.1103/PhysRevB.97.241201⟩
Article dans une revue hal-02264122v1
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Transmission of high-energy electrons through metal-semiconductor Schottky junctions

Elmer Monteblanco , Fabrice Donatini , Michel Hehn , Daniel Lacour , Y. Lassailly , et al.
Physical Review B, 2019, 100 (20), pp.205301. ⟨10.1103/PhysRevB.100.205301⟩
Article dans une revue hal-02358162v1
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Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers

Marco Piccardo , Chi-Kang Li , Yuh-Renn Wu , James Speck , Bastien Bonef , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2017, 95 (14), ⟨10.1103/PhysRevB.95.144205⟩
Article dans une revue hal-02360584v1
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Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe

Zhesheng Chen , Jelena Sjakste , Jingwei Dong , Amina Taleb-Ibrahimi , Jean-Pascal Rueff , et al.
Proceedings of the National Academy of Sciences of the United States of America, 2020, 117 (36), pp.21962-21967. ⟨10.1073/pnas.2008282117⟩
Article dans une revue hal-03049219v1