jacky even
Professor INSA Rennes
https://www.insa-rennes.fr/
FOTON Institute (CNRS lab. UMR 6082)
http://foton.cnrs.fr/v2016/
81
Documents
Identifiants chercheurs
jacky-even- ResearcherId : C-6212-2008
-
0000-0002-4607-3390
- Google Scholar : https://scholar.google.fr/citations?user=wZSGnjYAAAAJ&hl=fr
- IdRef : 076470482
- ResearcherId : http://www.researcherid.com/rid/C-6212-2008
Site web
- http://www.iufrance.fr/les-membres-de-liuf/membre/1913-jacky-even.html
Présentation
1984-1988: ENS Cachan (now ENS Paris-Saclay): Physics
1987-1988: Agrégation in Physics, Master Degree in Liquid Physics
1989-1992: University Paris VI/ Rennes I, PhD Thesis
1992-1999: Associate Professor (University Rennes I), Habilitation Degree
1999-now: Professor, Institut National des sciences Appliquées (INSA) de Rennes
1999-now: Creation and head of FOTON-INSA simulation team https://www.institut-foton.eu/physique-des-materiaux-et-dispositifs-perovskites/
2006-2009: Head of Materials Science and Nanotechnology Department, INSA Rennes
2010-2012: Director of Education, INSA Rennes
2018-2023: Senior member of IUF (Institut Universitaire de France) (http://www.iufrance.fr/les-membres-de-liuf/membre/1913-jacky-even.html)
2019/2020/2021/2022/2023: Highly Cited Researcher (Clarivate Analytics) https://clarivate.com/highly-cited-researchers/
2022 [Jean-Ricard Prize of the French Physical Society ](https://www.sfpnet.fr/jacky-even-laureat-du-prix-jean-ricard-2022-de-la-sfp)
2023-now: Re-elected Senior member of IUF
2013 : Video of invited presentation about Halide perovskites (in French):[videos-jnpv\_2013](http://webcast.in2p3.fr/videos-jnpv_2013_avancees_recentes_dans_le_domaine_des_perovskites_hybrides_pour_les_applications_photovoltaiques__jacky_even) containing among others: the first theoretical predictions of exciton screening in halide perovskites, importance of spin-orbit coupling, Rashba-Dresselhaus effect, symmetry analyses, first predictions of Kane parameters and results published in J. Even et al, Phys. Rev B 2012, J. Phys. Chem. Lett. 2013, J. Phys. Chem. C 2014, RRL Solar 2014, ChemPhysChem 2014. More presentations (in French) in 2016: https://videosjnpv2016.geeps.centralesupelec.fr/files/hybrides-organiques-perovskites_1.mp4. and 2021: https://videosjnpv2021.geeps.centralesupelec.fr/files/even.mp4
The prediction in 2013 (https://hal.science/hal-04500208) of low exciton binding energy and high effective dielectric constant of primary importance for the perovskite photovoltaic mechanism was finally published in 2014 (Even et al J. Phys. Chem. C 118, 11566, 2014) and exactly checked experimentally in 2015 by H. Snaith and coworkers at LNCMI Toulouse and Oxford University (Miyata et al, Nature Physics 11, 582, 2015)
Selected papers (2016-2023):
H. Tsai et al, Nature 536, 312 (2016)
W Nie et al, Nature Comm. 5, 11574 (2016)
H. Fang et al, Science Adv. 2, e1600534 (2016)
H. Fang et al, Light Science and Appl. 5, e16056 (2016)
A. Neukirch et al, Nano Letters 16, 3809 (2016)
L. Pedesseau et al, ACS Nano 10, 9776 (2016)
J. Even et al, Nanoscale 8, 6222 (2016)
D. Sapori et al, Nanoscale 8, 6369 (2016)
C. Robert et al, Phys. Rev.B 94, 075445 (2016)
J.C. Blancon et al, Science eaal4211 (2017)
M. Fu et al, Nano Letters 17, 2895 (2017)
H. Tsai et al, Adv. Ener. Mat. 7, 1602159 (2017)
C. Soe et al, J. Am. Chem. Soc. 139, 6297 (2017)
L. Mao et al, J. Am. Chem. Soc. 139, 11956 (2017)
S. Yun et al, Ang. Chem. Int. Ed. 56, 15806 (2017)
M.D. Smith et al, Chem. Sci. 8, 1960 (2017)
C.C. Stoumpos et al, Chem Cell 2, 427 (2017)
K. Appavoo et al, Phys. Rev. B 96, 195308 (2017)
H. Tsai et al, Science 360, 67 (2018)
C. Katan et al, Nature Materials 17, 377 (2018)
H. Fang et al, Nature Comm. 9, 243 (2018)
H. Tsai et al, Nature Comm. 9, 2130 (2018)
J.C. Blancon et al, Nature Comm. 9, 2554 (2018)
M. Fu et al, Nature Comm. 9, 3318 (2018)
W. Nie et al, Adv. Mat. 30, 1703879 (2018)
H. Tsai et al, Adv. Mat. 30, 1704217 (2018)
C. Soe et al, Adv. Ener. Mat. 8, 1700979 (2018)
H. Fang et al, Adv. Func. Mat. 28,1800305 (2018)
L. Zhou et al, ACS Energy Lett. 3, 787 (2018)
L. Mao et al, J. Am. Chem. Soc. 140, 3775 (2018)
X. Li et al, J. Am. Chem. Soc. 140, 12226 (2018)
L. Mao et al, J. Am. Chem. Soc. 140, 13078(2018)
M. Kepenekian et al, Nano Letters 18, 5603 (2018)
B. Traore et al, ACS Nano 12, 3321 (2018)
A. Marronnier et al, ACS Nano 12, 3477 (2018)
A. Ferreira et al, Phys. Rev. Lett. 121, 085502 (2018)
J. Leveillee et al, Phys. Rev. Mat. 2, 105406 (2018)
A. Gheno et al, RRL Solar 2, 1800191 (2018)
C. Katan et al, Chem. Rev. 119, 3140 (2019)
P. Tamarat et al, Nature Materials 18, 717 (2019)
C. Wei et al, Nature Comm. 10, 5342 (2019)
J. Leveillée et al, Nano Letters 19, 8732 (2019)
Soe et al, Proc. Nat. Acad. Sci. 116, 58 (2019)
N. Devesa Canicoba et al, ACS Mat. Lett. 1, 633 (2019)
J. M. Hoffman et al, J. Am. Chem. Soc. 141, 10661 (2019)
X. Li et al, J. Am. Chem. Soc. 141, 12880 (2019)
L. Mao et al, Chem Cell 5, 2593 (2019)
J. C. Blancon et al, Nature Nanotechnology,15, 969 (2020)
P. Tamarat et al, Nature Comm., 11, 6001 (2020)
H. Fang et al, Adv. Func. Mat. 29,1907979 (2020)
L. Chen et al, ACS Nano, 14,13127 (2020)
S. Kahman et al, ACS Ener. Lett., 5, 2512 (2020)
E. Kinigstein et al, ACS Mat. Lett. 2, 1360 (2020)
B. Traore et al, ACS Mat. Interf. 12, 6633 (2020)
C. Quarti et al, J. Phys. Mat. 3, 042001 (2020)
X. Fu et al, J. Am. Chem. Soc. 142, 4008 (2020)
T. Schmitt et al, J. Am. Chem. Soc. 142, 5060 (2020)
X. Li et al, J. Am. Chem. Soc. 142, 6625 (2020)
L. Mao et al, J. Am. Chem. Soc. 142, 8342 (2020)
I. Spanopoulos et al, J. Am. Chem. Soc. 142, 9028 (2020)
X. Li et al, J. Am. Chem. Soc. 142, 11482 (2020)
G. Roma et al, Phys. Rev. Mat. 4, 092402 (2020)
A. Ferreira et al, Comm. Phys. 3, 48 (2020)
F. Liu et al, Nature Comm., 12, 673 (2021)
S. Sidhik et al, Adv. Mat. 2007176 (2021)
A. Torma et al, ACS Nano 15, 20550 (2021)
S. Sidhik et al, Cell Rep. Phys. Sci. 2, 100601 (2021)
V. Diez‐cabanes et al, Adv. Opt. Mat., 2001832 (2021)
B. Song et al, ACS Mat. Lett. 3, 148 (2021)
F. Ledee et al, Materials Horizons 8,1547 (2021)
L. Gao et al, J. Am. Chem. Soc. 143, 12063 (2021)
S. Sidhik et al, Science 377, 1425 (2022)
Q. Akkerman et al, Science 377, 1406 (2022)
W. Li et al, Nature Nanotechnology 17, 45 (2022)
S. Cuthriell et al, Adv. Mat. 2202709 (2022)
Y. Qin et al, Adv. Mat. 2201666 (2022)
B. Traore et al, ACS. Ener. Lett. 7, 349 (2022)
L. Chen et al, Adv. Sci. 9, 2101661 (2022)
X. Li et al, J. Am. Chem. Soc. 144, 3902 (2022)
E. Vasileiadou et al, J. Am. Chem. Soc. 144, 6390 (2022)
B. Hehlen et al, Phys. Rev. B 105, 024306 (2022)
R. Nazarov et al, Phys. Rev. B 105, 245202 (2022)
L. Chen et al, Phys. Rev. B 106, 165310 (2022)
B. Traore et al, Phys. Rev. Mat. 6, 014604 (2022)
B. Cucco et al, RRL Solar 6, 2200718 (2022)
H. Zhang et al, Nature Physics, 19, 545 (2023)
J. Hou et al, Nature Synth., DOI : 10.1038/s44160-023-00422-3
P. Tamarat et al, Nature Comm., 14, 229 (2023)
A. Fehr et al, Nature Comm., 14, 3797 (2023)
S. Liu et al, Sci. Adv., 9, eadh2255 (2023)
C. Zhu et al, Adv. Mat. 2208354 (2023)
A. Abhervé et al, Adv. Mat. 2305784 (2023)
I. Metcalf et al, Chem. Rev., 123, 9565 (2023)
D. Dirin et al, Nano Letters (2023)
M. Zacharias et al, Phys. Rev. B, 108, 035155 (2023)
M. Zacharias et al, npj Comp. Mat., 9, 153 (2023)
P. Fu et al, J. Am. Chem. Soc. 145, 15997 (2023)
Z.G. Li et al, ACS Ener.Lett., 8, 3016 (2023)
B. Cucco et al, ACS. Mat. Lett. 5, 52 (2023)
C. Quarti et al, Adv. Opt. Mat. 2202801 (2023)
Z. Tang et al, Adv. Opt. Mat. 2301282 (2023)
A. Matuhina et al, Nanoscale, 15, 14764 (2023)
P. Basera et al, Nanoscale, 15, 11884 (2023)
Book Chapters (J. Even et al) in :
"Unconventional Thin Film Photovoltaics", RCS Publishing (2016)
"Semiconductor Nanocrystals and Metal Nanoparticles: Physical Properties and Device Applications", CRC Press (2016)
"Theoretical Modeling of Organohalide Perovskites for Photovoltaic Appl.", CRC Press (2017)
"Halide Perovskites - Photovoltaics, Light Emitting Devices and Beyond", Wiley (2018)
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Toward the III-V/Si high efficiency tandem solar cell7th International Workshop on "Advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications", Sep 2015, Bucarest, Romania
Communication dans un congrès
hal-01497190v1
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Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonicsEuropean Materials Research Society - Spring Meeting 2015 (E-MRS 2015 Spring Meeting), May 2015, Lille, France
Communication dans un congrès
hal-01497220v1
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
hal-00654337v1
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Développement d'un laser sur silicium dans l'approche pseudomorphiqueJournées nationales de l'optique guidée, 2012, Lyon, France
Communication dans un congrès
hal-00788434v1
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Structural characterisation of GaP/Si nanolayersEuropean Materials Research Society 2011, May 2011, Strasbourg, France
Communication dans un congrès
hal-00654330v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Lasers à boites quantiques sur InP pour les applications télécom à 1,55 µmSéminaire PONANT 2010, Jul 2010, Rennes, France
Communication dans un congrès
hal-00662947v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504484v1
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Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasersSPIE Photonics Europe 2010, Apr 2010, Bruxelles, Belgium. pp.77202F, ⟨10.1117/12.863580⟩
Communication dans un congrès
hal-00492346v1
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Fundamental studies for coherent growth of III-V materials on Si: toward Photonics on SiliconEMRS, Jun 2009, Strasbourg, France. pp.1
Communication dans un congrès
hal-00491771v1
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Evidence of lateral coupling on the carrier dynamics in InAs/InP(311)B quantum dotsIndium Phosphide and Related Materials, May 2008, Versailles, France. pp.1-4, ⟨10.1109/ICIPRM.2008.4702968⟩
Communication dans un congrès
hal-00487204v1
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Croissance par MBE de Boites quantiques InP sur GaP/Sijournées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès
hal-00491778v1
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Effect of stack number on the threshold current density and emission wavelength in quantum dash/dot lasers9th International Conference Trends in Nanotechnology (TNT 2008), Sep 2008, Oviedo, Spain. pp.2217 - 2221, ⟨10.1002/pssc.200881729⟩
Communication dans un congrès
hal-00492826v1
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Quantum Dash and Quantum Dot lasers on InP for 1.55 µm optical telecommunications: effect of stack numbers on threshold current densitySQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00494175v1
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Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μmIndium Phosphide and Related Materials, IPRM, May 2008, Versailles, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4703027⟩
Communication dans un congrès
hal-00492842v1
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491914v1
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
hal-00491426v1
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00489402v1
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Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491776v1
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Communication dans un congrès
hal-00491905v1
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Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface densityInternational Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
Communication dans un congrès
hal-00491786v1
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Growth and characterization of single phase GaP on Si(001)Colloque de l'Association Française de Cristallographie 2008, Jul 2008, Rennes, France. pp.W. Guo
Communication dans un congrès
hal-00486678v1
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Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dotseuro-MBE conference, Mar 2007, Sierra nevada, Granada, France. pp.1
Communication dans un congrès
hal-00491810v1
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InAs nanostructures on InP(100) for long wavelength (1.5-2.1µm) optoelectronic applicationsLong Wavelength Quantum Dots, Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00496872v1
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Novel nanostructures quantum dot based devicesOptics East 2007, Sep 2007, Boston, United States. pp.67790D, ⟨10.1117/12.734329⟩
Communication dans un congrès
hal-00486894v1
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Comparative study of Single- and Double-capped InAs/InP (311)B QD lasers: effects on lasing characteristicsLWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Jul 2007, Rennes, France. pp.1
Communication dans un congrès
hal-00491814v1
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Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.991, ⟨10.1063/1.2730228⟩
Communication dans un congrès
hal-00491468v1
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A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP substrate28th International Conference on the Physics of Semiconductors - ICPS 2006, Jul 2006, Vienne, Austria. pp.889, ⟨10.1063/1.2730177⟩
Communication dans un congrès
hal-00491466v1
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Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitationICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Jul 2006, Istanbul, Turkey. pp.454, ⟨10.1002/pssc.200673214⟩
Communication dans un congrès
hal-00491873v1
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Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing propertiesSandie Optics Task Force meeting, Technische Universitat Berlin, January 12-13 (2006), Jan 2006, Berlin, Germany. pp.1
Communication dans un congrès
hal-00504470v1
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InAs/InP quantum dots (QDs) : from fundamental understanding to coupled QD 1.55 µm laser applicationsInternational Conference on SuperLattices, Nano-structures and Nano-Devices, Jul 2006, Istanbul, Turkey. pp.458, ⟨10.1002/pssc.200673215⟩
Communication dans un congrès
hal-00491839v1
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InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 μm photoluminescence4th International Conference on Semiconductor Quantum Dots (QD 2006), May 2006, Chamonix, France. pp.3920, ⟨10.1002/pssc.200671622⟩
Communication dans un congrès
hal-00491729v1
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Influence of the number of quantum dots stacks on the threshold current density of 1.55 µm InAs/InP(311)B semiconductor lasersESLW 2006 (European Semiconductor Laser Workshop), Sep 2006, Nice, France. pp.1
Communication dans un congrès
hal-00491806v1
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Theory and experiment of InAs/InP quantum dots : from calculations to laser emission28th International Conference on the Physics of Semiconductor, Jul 2006, Vienne, Austria. pp.779-780, ⟨10.1063/1.2730122⟩
Communication dans un congrès
hal-00491853v1
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Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitationIWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Mar 2006, Paris, France. pp.1
Communication dans un congrès
hal-00491870v1
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Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dotsUK Compound Semiconductors conference, Jul 2006, Sheffield, United Kingdom. pp.1
Communication dans un congrès
hal-00491858v1
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InAs/InP quantum dots (QD) properties : How to improve QD laser performanceInternational Workshop on Semiconductor Quantum Dot Based Devices and Applications, Mar 2006, Paris, France. pp.1
Communication dans un congrès
hal-00491848v1
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Nanotechnologies: Etude des boites quantiques pour des applications télécoms, environnementales et médicalesjournées CIES : moniteurs du grand-ouest, 2005, Rennes, France
Communication dans un congrès
hal-00504413v1
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Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.141, ⟨10.1051/jp4:2006135031⟩
Communication dans un congrès
hal-00491480v1
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InAsSb/InP quantum dots for midwave infrared emitters : a theoretical studyMid Infrared Optoelectronics : Materials and Devices : MIOMD conference, 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504452v1
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InAsSb/InGaAs quantum nanostructures on InP (100)substrate: observation of 2.35 μm photoluminescence32nd International Symposium on Compound Semiconductors, Sep 2005, Rust, Germany. pp.524, ⟨10.1002/pssc.200564132⟩
Communication dans un congrès
hal-00491737v1
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Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasersPHASE 2005, international workshop on physics and applications of semiconductors lasers, 2005, Metz, France. pp.1
Communication dans un congrès
hal-00504411v1
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First observation of wavelength greater than 2 microns photoluminescence of quantum dots on InP (100) substrate"Mid Infrared Optoelectronics : Materials and Devices" conference, Lancaster, UK, September (2005)., Sep 2005, Lancaster, United Kingdom. pp.1
Communication dans un congrès
hal-00504462v1
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Structures à îlots quantiques sur substrat InP(100)pour l'émission dans le moyen infrarouge (2−5 µm)9th Colloquium on Lasers and Quantum Optics (COLOQ 9), Sep 2005, Dijon, France. pp.283, ⟨10.1051/jp4:2006135090⟩
Communication dans un congrès
hal-00491724v1
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First observation of 2.4 microns photoluminescence of InAsSb/InP quantum dots on (100) InP substrateNarrow Gap Semiconductors conference, Jul 2005, Toulouse, France. pp.1
Communication dans un congrès
hal-00504441v1
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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice PlaneInternational Conference on Physics of Semiconductors (ICPS 27), Jul 2004, Flagstaff, United States. pp.787, ⟨10.1063/1.1994342⟩
Communication dans un congrès
hal-00504383v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesjournée des doctorants de Rennes, Dec 2004, Rennes, France. pp.1
Communication dans un congrès
hal-00504407v1
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Mesure directe de l'absorption optique à 1.55 microns de boites quantiques InAs/InP (113)B et étude de l'influence du couplage boite/couche de mouillage sur les propriétés électroniquesJournées de la matière condensée, 2004, Nancy, France. pp.1
Communication dans un congrès
hal-00504395v1
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Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice planeCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1
Communication dans un congrès
hal-00504404v1
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Exact solutions of the Schrödinger equation in disk-shaped quantum dots and rings, infinite and finite confinement potentials, Stark and excitonic effectCECAM workshop on "modeling of self-assembled semi-conductors nanostructures", Jun 2004, Lyon, France. pp.1
Communication dans un congrès
hal-00504401v1
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Growth and Optical Characterizations of InAs Quantum Dots on InP Substrate: Towards a 1.55 µm Quantum Dot Laser12th international conference on Molecular Beam Epitaxy (MBE 2002), Sep 2002, San Francisco (CA), United States. pp.230-235, ⟨10.1016/S0022-0248(02)02473-9⟩
Communication dans un congrès
hal-00151117v1
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Lasers à base d'îlots quantiques InAs/Inp(100) et (311)B9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148526v1
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Lasers à îlots quantiques InAs/InP émettant à 1.53µm sur la transition fondamentale8èmes Journées de la Matière Condensée (JMC8), Sep 2002, Marseille, France
Communication dans un congrès
hal-00151208v1
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Fundamental emission of InAs/InP quantum dots laser at 1.52 µm26th International Conference on the Physics of Semiconductors (ICPS-26), Aug 2002, Edinburgh, United Kingdom
Communication dans un congrès
hal-00151203v1
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Caractérisations optiques des boites quantiques InAs/InP émettant à 1.55 µm9èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2002), Oct 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148534v1
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Towards III-V on silicon solar cells7è Journées Nationales du PhotoVoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 107, pp.191603 - 191603, 2015
Poster de conférence
hal-01660154v1
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Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de siliciumOptique Bretagne 2015 - Horizons de l'Optique, Jul 2015, Rennes, France
Poster de conférence
hal-01497238v1
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