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Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer

 Léa Cuchet , Bernard Rodmacq , Stephane Auffret , Ricardo C. Sousa , Ioan L. Prejbeanu , et al.
Journal of Applied Physics, 2015, 117 (23), pp.233901. ⟨10.1063/1.4922630⟩
Article dans une revue hal-01589475v1
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Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

 L. Avilés-Félix , A. Olivier , G. Li , C. Davies , L. Álvaro-Gómez , et al.
Scientific Reports, 2020, 10 (1), ⟨10.1038/s41598-020-62104-w⟩
Article dans une revue hal-03111530v1

Integration of Tb/Co multilayers within optically switchable perpendicular magnetic tunnel junctions

 L. Avilés-Félix , L. Álvaro-Gómez , G. Li , C. Davies , A. Olivier , et al.
AIP Advances, 2019, 9 (12), pp.125328. ⟨10.1063/1.5129821⟩
Article dans une revue hal-02428524v1
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Towards high density STT-MRAM at sub-20nm nodes

 Steven Lequeux , V. Nguyen , N. Perrissin , J Chatterjee , L. Tille , et al.
29th Magnetic Recording Conference (TMRC 2018), Aug 2018, Milpitas, CA, United States
Communication dans un congrès hal-02131655v1

Enhanced blocking temperature in (Pt/Co)$_3$/IrMn/Co and (Pd/Co)$_3$/IrMn/Co trilayers with ultrathin IrMn layer

 G. Vinai , J. Moritz , S. Bandiera , I. L. Prejbeanu , B. Dieny
Journal of Physics D: Applied Physics, 2013, 46, pp.322001. ⟨10.1088/0022-3727/46/32/322001⟩
Article dans une revue cea-01073003v1

IrMn microstructural effects on exchange bias variability in patterned arrays of IrMn/Co square dots

 G. Vinai , Jérôme Moritz , G. Gaudin , Jan Vogel , I.L. Prejbeanu , et al.
Journal of Physics D: Applied Physics, 2014, 47 (19), pp.195302. ⟨10.1088/0022-3727/47/19/195302⟩
Article dans une revue hal-00983480v1
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Spin transfer torque magnetic random-access memory: Towards sub-10 nm devices

 N. Perrissin , S. Lequeux , N. Strelkov , L. Vila , L Buda-Prejbeanu , et al.
2018 International Conference on IC Design & Technology (ICICDT 2018), Jun 2018, Otrante, Italy. ⟨10.1109/ICICDT.2018.8399772⟩
Communication dans un congrès hal-01934505v1
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A highly thermally stable sub-20 nm magnetic random-access memory based on perpendicular shape anisotropy

 Nicolas Perrissin , Steven Lequeux , Nikita Strelkov , Antoine Chavent , Laurent Vila , et al.
Nanoscale, 2018, 10 (25), pp.12187. ⟨10.1039/C8NR01365A⟩
Article dans une revue hal-01824092v1

Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio

 B. Lacoste , M. Marins de Castro , T. Devolder , R. Sousa , Liliana D. Buda-Prejbeanu , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (22), pp.224404. ⟨10.1103/PhysRevB.90.224404⟩
Article dans une revue hal-02010809v1
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Microwave functionality of spintronic devices implemented in a hybrid complementary metal oxide semiconductor and magnetic tunnel junction technology

 Rui Ma , Ahmed Sidi El Valli , Martin Kreissig , Gregory Di Pendina , Florian Protze , et al.
Electronics Letters, 2021, 57 (6), pp.264 - 266. ⟨10.1049/ell2.12103⟩
Article dans une revue hal-03192766v1

Opportunities and challenges for spintronics in the microelectronic industry

 Bernard Dieny , Ioan Lucian Prejbeanu , Kevin Garello , Pietro Gambardella , Paulo Peixeiro Freitas , et al.
Nature Electronics, 2020, 3, pp.446. ⟨10.1038/s41928-020-0461-5⟩
Article dans une revue hal-02917378v1
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Influence of Mn diffusion on IrMn thickness threshold for the onset of exchange bias in IrMn/Co bilayers

 G. Vinai , L. Frangou , C. Castán-Guerrero , V Bonanni , B Gobaut , et al.
Journal of Physics: Conference Series, 2017, 903, pp.012061. ⟨10.1088/1742-6596/903/1/012061⟩
Article dans une revue hal-01683639v1

Effects of the Heating Current Polarity on the Writing of Thermally Assisted Switching-MRAM

 Antoine Chavent , Jérémy Alvarez-Hérault , Céline Portemont , Claire Creuzet , Jeremy Pereira , et al.
IEEE Transactions on Magnetics, 2014, 50 (11), pp.1-4. ⟨10.1109/TMAG.2014.2322494⟩
Article dans une revue hal-02131755v1
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Impact of Joule heating on the stability phase diagrams of perpendicular magnetic tunnel junctions

 N. Strelkov , A. Chavent , A. Timopheev , R. Sousa , I. L Prejbeanu , et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 98, pp.214410. ⟨10.1103/PhysRevB.98.214410⟩
Article dans une revue hal-01949474v1
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High density SOT-MRAM memory array based on a single transistor

 Rana Alhalabi , Etienne Nowak , Ioan-Lucian Prejbeanu , Gregory Di Pendina
Non-Volatile Memory Technology Symposium (NVMTS), Oct 2018, Sendai, Japan. ⟨10.1109/NVMTS.2018.8603114⟩
Communication dans un congrès hal-01982792v1
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Control of interface anisotropy for spin transfer torque in perpendicular magnetic tunnel junctions for cryogenic temperature operation

 P. Veiga , A. Mora-Hernandez , M. Dammak , S. Auffret , I. Joumard , et al.
AIP Advances, 2023, 13 (2), pp.025253. ⟨10.1063/9.0000512⟩
Article dans une revue hal-04205074v1

Control of Sub-Nanosecond Precessional Magnetic Switching in STT-MRAM Cells for SRAM Applications

 B. Lacoste , M. Marins De Castro , R. C. Sousa , I. L. Prejbeanu , L. D. Buda-Prejbeanu , et al.
IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495262⟩
Communication dans un congrès hal-01579139v1
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Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic–photonic circuits

 A Olivier , L Avilés-Félix , A Chavent , L Álvaro-Goémez , M Rubio-Roy , et al.
Nanotechnology, 2020, 31 (42), pp.425302. ⟨10.1088/1361-6528/ab9c56⟩
Article dans une revue hal-03111547v1
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Novel multifunctional RKKY coupling layer for ultrathin perpendicular synthetic antiferromagnet

 Jyotirmoy Chatterjee , Stéphane Auffret , Ricardo Sousa , Paulo Coelho , Ioan-Lucian Prejbeanu , et al.
Scientific Reports, 2018, 8, pp.11724. ⟨10.1038/s41598-018-29913-6⟩
Article dans une revue hal-01894449v1

MRAM: from STT to SOT, for security and memory

 M. Kharbouche-Harrari , Rana Alhalabi , J. Postel-Pellerin , Romain Wacquez , Driss Aboulkassimi , et al.
XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), Nov 2018, Lyon, France
Communication dans un congrès hal-01982788v1
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Novel approach for nano-patterning magnetic tunnel junctions stacks at narrow pitch: A route towards high density STT-MRAM applications

 V. D. Nguyen , P. Sabon , J. Chatterjee , L. Tillie , P. Veloso Coelho , et al.
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, CA, United States. ⟨10.1109/IEDM.2017.8268517⟩
Communication dans un congrès hal-01763666v1
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Field-free all-optical switching and electrical readout of Tb/Co-based magnetic tunnel junctions

 D. Salomoni , Y. Peng , L. Farcis , S. Auffret , Michel Hehn , et al.
Physical Review Applied, 2023, 20 (3), pp.034070. ⟨10.1103/PhysRevApplied.20.034070⟩
Article dans une revue hal-04227118v1
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In-plane reorientation induced single laser pulse magnetization reversal

 Y. Peng , D. Salomoni , G. Malinowski , W. Zhang , Julius Hohlfeld , et al.
Nature Communications, 2023, 14 (1), pp.5000. ⟨10.1038/s41467-023-40721-z⟩
Article dans une revue hal-04229028v1

Precessional spin-transfer switching in a magnetic tunnel junction with a synthetic antiferromagnetic perpendicular polarizer

 M. Marins de Castro , R. Sousa , S. Bandiera , C. Ducruet , A. Chavent , et al.
Journal of Applied Physics, 2012, 111 (7), pp.07C912
Article dans une revue hal-02023419v1
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Towards high density STT-MRAM at sub-20nm nodes

 V. D Nguyen , N. Perrissin , S. Lequeux , J. Chatterjee , L. Tille , et al.
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. ⟨10.1109/VLSI-TSA.2018.8403867⟩
Communication dans un congrès hal-01934201v1
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Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices

 Trevor P. Almeida , Alvaro Palomino , Steven Lequeux , Victor Boureau , Olivier Fruchart , et al.
APL Materials, 2022, 10 (6), pp.061104. ⟨10.1063/5.0096761⟩
Article dans une revue hal-03648984v2

High speed and high-area efficiency non-volatile look-up table design based on magnetic tunnel junction

 Rana Alhalabi , Gregory Di Pendina , Ioan-Lucian Prejbeanu , Etienne Nowak
2017 17th Non-Volatile Memory Technology Symposium (NVMTS), Aug 2017, Aachen, Germany. ⟨10.1109/NVMTS.2017.8171280⟩
Communication dans un congrès hal-01864492v1

Large exchange bias enhancement in (Pt(or Pd)/Co)/IrMn/Co trilayers with ultrathin IrMn thanks to interfacial Cu dusting

 G. Vinai , Jérôme Moritz , S. Bandiera , I. L. Prejbeanu , B. Dieny
Applied Physics Letters, 2014, 104 (16), ⟨10.1063/1.4872265⟩
Article dans une revue hal-01286870v1

Comparison of Synthetic Antiferromagnets and Hard Ferromagnets as Reference Layer in Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy

 S. Bandiera , S Sousa , Y. Dahmane , C. Ducruet , C. Portemont , et al.
IEEE Magnetics Letters, 2010, 1, pp.3000204 - 3000204. ⟨10.1109/LMAG.2010.2052238⟩
Article dans une revue hal-01683843v1

Temperature Limits of Single and Composite Storage Layer with Different Thicknesses and Capping Materials for p-STT-MRAM Applications

 Luc Tillie , Jyotirmoy Chatterjee , Ricardo Sousa , Stéphane Auffret , N. Lamard , et al.
2018 IEEE International Memory Workshop (IMW), May 2018, Kyoto, France. ⟨10.1109/IMW.2018.8388854⟩
Communication dans un congrès hal-01934565v1
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