Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission
Pierre Ruterana
,
Magali Morales
,
Nicolas Chery
,
Thi Huong Ngo
,
Marie-Pierre Chauvat
,
et al.
Article dans une revue
hal-03047502v1
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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Ranim Mohamad
,
Marie Pierre Chauvat
,
Slawomir Kret
,
Piero Gamarra
,
Sylvain Delage
,
et al.
Article dans une revue
hal-02335333v1
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Implantation damage formation in a-, c- and m-plane GaN
K. Lorenz
,
E. Wendler
,
A. Redondo-Cubero
,
N. Catarino
,
M.-P. Chauvat
,
et al.
Article dans une revue
hal-02340881v1
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InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate
L. Desplanque
,
Xianglei Han
,
Maria Fahed
,
Vinay K. Chinni
,
David Troadec
,
et al.
26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014 , 2014, Montpellier, France. paper Mo-C1-6, 2 p.,
⟨10.1109/ICIPRM.2014.6880530⟩
Communication dans un congrès
hal-01059835v1
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Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P. Chauhan
,
S. Hasenöhrl
,
E. Dobročka
,
M.P. Chauvat
,
A. Minj
,
et al.
Article dans une revue
hal-02335264v1
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
Prerna Chauhan
,
S. Hasenöhrl
,
A. Minj
,
M.P. Chauvat
,
Pierre Ruterana
,
et al.
Article dans une revue
hal-03050853v1
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High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates
Paolo Perna
,
Laurence Méchin
,
Marie-Pierre Chauvat
,
Pierre Ruterana
,
Ch. Simon
,
et al.
Journal of Physics: Condensed Matter , 2009, 21, pp.306005
Article dans une revue
hal-00438161v1
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Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence
B. Damilano
,
Stephane Vezian
,
M.P. Chauvat
,
Pierre Ruterana
,
Nuño Amador-Méndez
,
et al.
Article dans une revue
hal-03865257v1
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Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures
M. Fialho
,
S. Magalhaes
,
J. Rodrigues
,
M.P. Chauvat
,
P. Ruterana
,
et al.
Article dans une revue
hal-02340859v1
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Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
Prerna Chauhan
,
S. Hasenöhrl
,
A. Minj
,
M.P. Chauvat
,
P. Ruterana
,
et al.
Article dans une revue
hal-02338791v1
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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer
Ranim Mohamad
,
Marie Pierre Chauvat
,
Slawomir Kret
,
Piero Gamarra
,
Sylvain Delage
,
et al.
Article dans une revue
hal-03047705v1
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Interface dislocations in In x Ga 1- x N/GaN heterostructures
I. Belabbas
,
G. Nouet
,
Q. Li
,
A. Minj
,
M-P Chauvat
,
et al.
Article dans une revue
hal-03352834v1
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Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN
Antoine Béré
,
Pierre Ruterana
,
Marie-Pierre Chauvat
,
Jean Koulidiati
Article dans une revue
insu-03611657v1
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TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
Y. Wang
,
M.P. Chauvat
,
P. Ruterana
,
L. Desplanque
,
X. Wallart
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy , 2011, San Francisco, CA, United States
Communication dans un congrès
hal-00807156v1
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The high sensitivity of InN under rare earth ion implantation at medium range energy
B Lacroix
,
M P Chauvat
,
P Ruterana
,
K Lorenz
,
E Alves
,
et al.
Article dans une revue
hal-00636199v1
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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Stanislav Hasenöhrl
,
Prerna Chauhan
,
Edmund Dobročka
,
Roman Stoklas
,
Ľubomír Vančo
,
et al.
Article dans une revue
hal-02334105v1
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Optical, structural and electrical characterization of pure ZnO films grown on p-type Si substrates by radiofrequency magnetron sputtering in different atmospheres
O. Melnichuk
,
L. Melnichuk
,
Ye Venger
,
C. Guillaume
,
M-P Chauvat
,
et al.
Article dans une revue
hal-03155451v1
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PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire
L. Lahourcade
,
J. Renard
,
P. K. Kandaswamy
,
B. Gayral
,
Marie-Pierre Chauvat
,
et al.
Microelectronics Journal , 2009, 40, pp.325-327
Article dans une revue
hal-00438093v1
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Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy
L Desplanque
,
M Fahed
,
X Han
,
V Chinni
,
D Troadec
,
et al.
Article dans une revue
hal-03779284v1
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Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire
J.-C. Villegier
,
S. Bouat
,
P. Cavalier
,
R. Setzu
,
R. Espiau de Lamaestre
,
et al.
Article dans une revue
hal-00974758v1
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Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties
L. Lahourcade
,
J. Renard
,
B. Gayral
,
E. Monroy
,
Marie-Pierre Chauvat
,
et al.
Journal of Applied Physics , 2008, 103, pp.093514
Article dans une revue
cea-00372565v1
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Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth
Bertrand Lacroix
,
Marie-Pierre Chauvat
,
Pierre Ruterana
,
G. Nataf
,
P. de Mierry
Applied Physics Letters , 2011, 98, pp.121916
Article dans une revue
hal-00586001v1
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Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications
Arantxa Vilalta-Clemente
,
Magali Morales
,
Marie-Pierre Chauvat
,
Yadira Arroyo-Rojas Dasilva
,
Marie A. Poisson
,
et al.
Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V , Jan 2010, San Francisco, United States. pp.76020K
Communication dans un congrès
hal-00491499v1
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The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template
Hichem Ben Ammar
,
Albert Minj
,
Piero Gamarra
,
Cédric Lacam
,
Magali Morales
,
et al.
Journal of Microscopy , 2017
Article dans une revue
hal-03351944v1
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Optimized ohmic contacts for InAlGaN/GaN HEMTs
Pierre Ruterana
,
Marie Pierre Chauvat
,
Magali Morales
,
Farid Medjdoub
,
Piero Gamarra
,
et al.
ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems , Oct 2022, Smolenice, Slovakia. pp.1-8,
⟨10.1109/ASDAM55965.2022.9966781⟩
Communication dans un congrès
hal-03930667v1
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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB
Bruno Guillet
,
Ö. Arthursson
,
Laurence Méchin
,
M.-N. Metzner
,
Marie-Pierre Chauvat
,
et al.
J Low Temp Phys , 2008, 151, pp.570-574
Article dans une revue
cea-00372235v1
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Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB
B. Guillet
,
Ö. Arthursson
,
L. Méchin
,
M. N. Metzner
,
M. P. Chauvat
,
et al.
Article dans une revue
istex
hal-03742926v1
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The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells
Nicolas Chery
,
Thi Huong Ngo
,
M.P. Chauvat
,
B. Damilano
,
A Courville
,
et al.
Journal of Microscopy , 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313.
⟨10.1111/jmi.12657⟩
Article dans une revue
hal-01691523v1
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Extended defects in nitride layers, influence on the quantum wells and quantum dots
Pierre Ruterana
,
Marie-Pierre Chauvat
,
Yadira Arroyo-Rojas Dasilva
,
Huaping Lei
,
L. Lahourcade
,
et al.
Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V , Jan 2010, San Francisco, United States. pp.760212
Communication dans un congrès
hal-00498128v1
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High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics
S. Valdueza-Felip
,
E. Bellet-Amalric
,
A. Núñez-Cascajero
,
Y. Wang
,
M.-P. Chauvat
,
et al.
Article dans une revue
hal-02064247v1
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