Nombre de documents

17

CV de Marie-Pierre Chauvat


Communication dans un congrès7 documents

  • Ludovic Desplanque, Xianglei Han, Maria Fahed, Vinay K. Chinni, David Troadec, et al.. InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., 2014, <10.1109/ICIPRM.2014.6880530>. <hal-01059835>
  • Y. Wang, M.P. Chauvat, P. Ruterana, L. Desplanque, X. Wallart. TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy. Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States. <hal-00807156>
  • O. Olivier, N. Wichmann, J.J. Mo, A. Noudeviwa, Y. Roelens, et al.. Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET. 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. _, pp.41-43, 2010, <10.1109/ICIPRM.2010.5515926>. <hal-00549921>
  • Pierre Ruterana, Marie-Pierre Chauvat, Yadira Arroyo-Rojas Dasilva, Huaping Lei, L. Lahourcade, et al.. Extended defects in nitride layers, influence on the quantum wells and quantum dots. Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. 7602, pp.760212, 2010, Proceedings of SPIE. <hal-00498128>
  • Arantxa Vilalta-Clemente, Magali Morales, Marie-Pierre Chauvat, Yadira Arroyo-Rojas Dasilva, Marie A. Poisson, et al.. Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications. Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. 7602, pp.76020K, 2010, Proceedings of SPIE. <hal-00491499>
  • J.-C. Villegier, S. Bouat, P. Cavalier, R. Setzu, R. Espiau de Lamaestre, et al.. Epitaxial Growth of Sputtered Ultra-thin NbN Layers and Junctions on Sapphire. ASC'08 (Applied Superconductivity Conference), Chicago, Illinois USA, August 17 - 22, 2008, 2009, Chicago, United States. 19 (3), pp.3375-3378, 2009. <hal-00974758>
  • Bruno Guillet, Ö. Arthursson, Laurence Méchin, Marie-Pierre Chauvat, P. Ruterana, et al.. Caractérisations de films ultra minces NBN pour des applications HEB THZ. 4èmes Journées dispositifs supraconducteurs, Jun 2007, Palaiseau, France. <hal-00198521>

Article dans une revue10 documents

  • B Lacroix, M P Chauvat, P Ruterana, K Lorenz, E Alves, et al.. The high sensitivity of InN under rare earth ion implantation at medium range energy. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (29), pp.295402. <10.1088/0022-3727/44/29/295402>. <hal-00636199>
  • Bertrand Lacroix, Marie-Pierre Chauvat, Pierre Ruterana, G. Nataf, P. De Mierry. Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth. Applied Physics Letters, American Institute of Physics, 2011, 98, pp.121916. <hal-00586001>
  • Yadira Arroyo-Rojas Dasilva, Marie-Pierre Chauvat, Pierre Ruterana, L. Lahourcade, E. Monroy, et al.. Defect structure in heteroepitaxial semipolar (11¯22) (Ga, Al)N. Journal of Physics: Condensed Matter, IOP Publishing, 2010, 22, pp.355802. <hal-00515297>
  • Arantxa Vilalta-Clemente, G. R. Mutta, Marie-Pierre Chauvat, Magali Morales, Jean-Louis Doualan, et al.. Investigation of InN layers grown by molecular beam epitaxy on GaN templates. physica status solidi (a), Wiley, 2010, 207 (5), pp.1079-1082. <hal-00483614>
  • Paolo Perna, Laurence Méchin, Marie-Pierre Chauvat, Pierre Ruterana, Ch. Simon, et al.. High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates. Journal of Physics: Condensed Matter, IOP Publishing, 2009, 21, pp.306005. <hal-00438161>
  • L. Lahourcade, Julien Pernot, A. Wirthmüller, Marie-Pierre Chauvat, Pierre Ruterana, et al.. Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics. Applied Physics Letters, American Institute of Physics, 2009, 95, pp.171908. <hal-00438206>
  • L. Lahourcade, J. Renard, P. K. Kandaswamy, B. Gayral, Marie-Pierre Chauvat, et al.. PAMBE growth of (112¯ 2)-oriented GaN/AlN nanostructures on m-sapphire. Microelectronics Journal, Elsevier, 2009, 40, pp.325-327. <hal-00438093>
  • Lise Lahourcade, Edith Bellet-Amalric, Eva Monroy, Marie-Pierre Chauvat, Pierre Ruterana. Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire. J Mater Sci: Mater Electron, 2008, 19, pp.805-809. <cea-00372923>
  • Bruno Guillet, Ö. Arthursson, Laurence Méchin, M.-N. Metzner, Marie-Pierre Chauvat, et al.. Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB. J Low Temp Phys, 2008, 151, pp.570-574. <cea-00372235>
  • L. Lahourcade, J. Renard, B. Gayral, E. Monroy, Marie-Pierre Chauvat, et al.. Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties. Journal of Applied Physics, American Institute of Physics, 2008, 103, pp.093514. <cea-00372565>