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	Pour les 46 documents Envoyer sur ORCID RSS ATOM Exporter BibTeX XML-TEI CSV RTF EndNote PDF HTML Export avancé	Page : Page précédente 1 2 Page suivante	triés par Pertinence Auteur A→Z Auteur Z→A Titre A→Z Titre Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante

		The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer Ranim Mohamad , Marie Pierre Chauvat , Slawomir Kret , Piero Gamarra , Sylvain Delage , et al. Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩ Article dans une revue hal-02335333v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Implantation damage formation in a-, c- and m-plane GaN K. Lorenz , E. Wendler , A. Redondo-Cubero , N. Catarino , M.-P. Chauvat , et al. Acta Materialia, 2017, 123, pp.177-187. ⟨10.1016/j.actamat.2016.10.020⟩ Article dans une revue hal-02340881v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate L. Desplanque , Xianglei Han , Maria Fahed , Vinay K. Chinni , David Troadec , et al. 26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. paper Mo-C1-6, 2 p., ⟨10.1109/ICIPRM.2014.6880530⟩ Communication dans un congrès hal-01059835v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission Pierre Ruterana , Magali Morales , Nicolas Chery , Thi Huong Ngo , Marie-Pierre Chauvat , et al. Journal of Applied Physics, 2020, 128, pp.223102. ⟨10.1063/5.0027119⟩ Article dans une revue hal-03047502v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates Paolo Perna , Laurence Méchin , Marie-Pierre Chauvat , Pierre Ruterana , Ch. Simon , et al. Journal of Physics: Condensed Matter, 2009, 21, pp.306005 Article dans une revue hal-00438161v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence B. Damilano , Stephane Vezian , M.P. Chauvat , Pierre Ruterana , Nuño Amador-Méndez , et al. Journal of Applied Physics, 2022, 132 (3), pp.035302. ⟨10.1063/5.0089892⟩ Article dans une revue hal-03865257v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P. Chauhan , S. Hasenöhrl , E. Dobročka , M.P. Chauvat , A. Minj , et al. Journal of Applied Physics, 2019, 125 (10), pp.105304. ⟨10.1063/1.5079756⟩ Article dans une revue hal-02335264v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Prerna Chauhan , S. Hasenöhrl , A. Minj , M.P. Chauvat , Pierre Ruterana , et al. Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩ Article dans une revue hal-03050853v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer Prerna Chauhan , S. Hasenöhrl , A. Minj , M.P. Chauvat , P. Ruterana , et al. Applied Surface Science, 2020, 502, pp.144086. ⟨10.1016/j.apsusc.2019.144086⟩ Article dans une revue hal-02338791v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN Antoine Béré , Pierre Ruterana , Marie-Pierre Chauvat , Jean Koulidiati Japanese Journal of Applied Physics, 2013, 52, pp.11NG06. ⟨10.7567/JJAP.52.11NG06⟩ Article dans une revue insu-03611657v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Interface dislocations in In x Ga 1- x N/GaN heterostructures I. Belabbas , G. Nouet , Q. Li , A. Minj , M-P Chauvat , et al. physica status solidi (a), 2017, 214 (4), pp.1600442. ⟨10.1002/pssa.201600442⟩ Article dans une revue hal-03352834v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures M. Fialho , S. Magalhaes , J. Rodrigues , M.P. Chauvat , P. Ruterana , et al. Surface and Coatings Technology, 2018, 355, pp.29-39. ⟨10.1016/j.surfcoat.2018.02.008⟩ Article dans une revue hal-02340859v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer Ranim Mohamad , Marie Pierre Chauvat , Slawomir Kret , Piero Gamarra , Sylvain Delage , et al. Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩ Article dans une revue hal-03047705v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry R. Rahali , Henning Lebius , A. Benyagoub , E. Gardes , S. Guillous , et al. Materialia, 2023, 27, pp.101696. ⟨10.1016/j.mtla.2023.101696⟩ Article dans une revue hal-03962254v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB B. Guillet , Ö. Arthursson , L. Méchin , M. N. Metzner , M. P. Chauvat , et al. Journal of Low Temperature Physics, 2008, 151, pp.570-574. ⟨10.1007/s10909-007-9694-1⟩ Article dans une revue istex hal-03742926v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Extended defects in nitride layers, influence on the quantum wells and quantum dots Pierre Ruterana , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Huaping Lei , L. Lahourcade , et al. Conference 7602 : Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.760212 Communication dans un congrès hal-00498128v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics S. Valdueza-Felip , E. Bellet-Amalric , A. Núñez-Cascajero , Y. Wang , M.-P. Chauvat , et al. Journal of Applied Physics, 2014, 116 (23), pp.233504. ⟨10.1063/1.4903944⟩ Article dans une revue hal-02064247v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells Nicolas Chery , Thi Huong Ngo , M.P. Chauvat , B. Damilano , A Courville , et al. Journal of Microscopy, 2018, Special Issue: Microscopy of Semi‐Conducting Materials, 268 (3), pp.305-313. ⟨10.1111/jmi.12657⟩ Article dans une revue hal-01691523v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		InAlGaN/GaN HEMTs at Cryogenic Temperatures Ezgi Dogmus , Riad Kabouche , Sylvie Lepilliet , Astrid Linge , Malek Zegaoui , et al. Electronics, 2016, 5 (2), pp.31. ⟨10.3390/electronics5020031⟩ Article dans une revue hal-03028345v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S. Valdueza-Felip , A. Ajay , L. Redaelli , M.P. Chauvat , P. Ruterana , et al. Solar Energy Materials and Solar Cells, 2017, 160, pp.355-360. ⟨10.1016/j.solmat.2016.10.007⟩ Article dans une revue hal-02166080v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire Lise Lahourcade , Edith Bellet-Amalric , Eva Monroy , Marie-Pierre Chauvat , Pierre Ruterana J Mater Sci: Mater Electron, 2008, 19, pp.805-809 Article dans une revue cea-00372923v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs Mehdi Rzin , Jean-Marc Routoure , Bruno Guillet , Laurence Méchin , Ezgi Dogmus , et al. EMRS Fall Meeting, Sep 2016, Varsovie, Poland Poster de conférence hal-01641574v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Caractérisations de films ultra minces NBN pour des applications HEB THZ Bruno Guillet , Ö. Arthursson , Laurence Méchin , Marie-Pierre Chauvat , P. Ruterana , et al. 4èmes Journées dispositifs supraconducteurs, Jun 2007, Palaiseau, France Communication dans un congrès hal-00198521v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics L. Lahourcade , Julien Pernot , A. Wirthmüller , Marie-Pierre Chauvat , Pierre Ruterana , et al. Applied Physics Letters, 2009, 95 (17), pp.171908. ⟨10.1063/1.3256189⟩ Article dans une revue hal-00438206v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Optimized ohmic contacts for InAlGaN/GaN HEMTs Farah Bouazzaoui , Marie Pierre Chauvat , Magali Morales , Malek Zegaoui , F Medjdoub , et al. International Symposium on Growth of III-Nitrides, Aug 2018, Warsaw, Poland Communication dans un congrès hal-03287822v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Interface dislocations in InxGa1–xN/GaN heterostructures Q.T. Li , A. Minj , M-P Chauvat , Jun Chen , Ruterana P. Phys.Status Solidi A, 2016 Article dans une revue hal-03351874v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template Hichem Ben Ammar , Albert Minj , Piero Gamarra , Cédric Lacam , Magali Morales , et al. Journal of Microscopy, 2017 Article dans une revue hal-03351944v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth Bertrand Lacroix , Marie-Pierre Chauvat , Pierre Ruterana , G. Nataf , P. de Mierry Applied Physics Letters, 2011, 98, pp.121916 Article dans une revue hal-00586001v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Optimized ohmic contacts for InAlGaN/GaN HEMTs Pierre Ruterana , Marie Pierre Chauvat , Magali Morales , Farid Medjdoub , Piero Gamarra , et al. ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩ Communication dans un congrès hal-03930667v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications Arantxa Vilalta-Clemente , Magali Morales , Marie-Pierre Chauvat , Yadira Arroyo-Rojas Dasilva , Marie A. Poisson , et al. Conference 7602: Photonic West OPTO: Gallium Nitride Materials and Devices V, Jan 2010, San Francisco, United States. pp.76020K Communication dans un congrès hal-00491499v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More

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The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

Implantation damage formation in a-, c- and m-plane GaN

InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

High Curie temperature for La0.7Sr0.3MnO3 thin films deposited on CeO2/YSZ-based buffered silicon substrates

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Growth evolution of N-polar indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Atomic core structures associated to the threading dislocation with $\langle1\bar 100\rangle$ Burgers vector and [0001] line direction in GaN

Interface dislocations in In x Ga 1- x N/GaN heterostructures

Defect formation and optical activation of Tb implanted AlxGa1−xN films using channeled implantation at different temperatures

The critical role of N-vacancy on chemical composition fluctuations and degradation of InAlN layer

SrTiO3 surface micro-structuring with swift heavy ions in grazing incidence geometry

Properties of Ultra-Thin NbN Films for Membrane-Type THz HEB

Extended defects in nitride layers, influence on the quantum wells and quantum dots

High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics

The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wells

InAlGaN/GaN HEMTs at Cryogenic Temperatures

P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm

Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire

Impact of gate-drain spacing engineering on DC and noise performance of SiN in-situ passivated InAlGaN/GaN HEMTs

Caractérisations de films ultra minces NBN pour des applications HEB THZ

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Interface dislocations in InxGa1–xN/GaN heterostructures

The structure of InAlGaN layers grown by metal organic vapour phase epitaxy : effects of threading dislocations and inversion domains from the GaN template

Efficient blocking of planar defects by prismatic stacking faults in semipolar (112¯2)-GaN layers on m-sapphire by epitaxial lateral overgrowth

Optimized ohmic contacts for InAlGaN/GaN HEMTs

Transmission electron microscopy and XRD investigations of InAIN/GaN thin heterostructures for HEMT applications