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Courts-circuits répétitifs non-destructifs sur des transistors HEMT-GaN 650 V
Adrien Lambert
,
Hervé Morel
,
D. Tournier
,
Dominique Planson
,
Luong Viêt Phung
5ème Symposium de Génie Electrique (SGE 2023), Jul 2023, Lille, France
Communication dans un congrès
hal-04150168v1
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Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
20th International Conference on Silicon Carbide and Related Materials (ICSCRM) - ICSCRM 2023, Naples University - Federico II, Sep 2023, Sorrento, Italy
Communication dans un congrès
hal-04221605v1
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First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests
Hassan Hamad
,
Dominique Tournier
,
Jean-Michel Reynes
,
Olivier Perrotin
,
Régis Meuret
34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France
Communication dans un congrès
hal-04240602v1
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
Pierre Brosselard
,
Dominique Planson
,
D. Tournier
,
Pascal Bevilacqua
,
Camille Sonneville
ICSCRM 2023 - International Conference on Silicon Carbide and Related Materials, Sep 2023, Sorrente, Italy
Communication dans un congrès
hal-04222211v1
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Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration -Basic Concept and Technology
Ralph Makhoul
,
Nour Beydoun
,
Abdelhakim Bourennane
,
Luong Viet Phung
,
M. Lazar
Communication dans un congrès
hal-04203163v1
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Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
Ralph Makhoul
,
Abdelhakim Bourennane
,
Luong Viêt Phung
,
Frédéric Richardeau
,
Mihai Lazar
IEEE 30th International Conference Mixed Design of Integrated Circuits and Systems, Institute of Computer Science of AGH University of Science and Technology, Jun 2023, Kraków, Poland. https://www.mixdes.org/Mixdes3/, ⟨10.23919/MIXDES58562.2023.10203213⟩
Communication dans un congrès
hal-04147862v1
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New Methodology for Defining Integration Limits Used for Switching Energy Computation in Power Devices
Joao Oliveira
,
Bernardo Cougo
,
Fabio Coccetti
,
Stephane Azzopardi
,
Hervé Morel
Communication dans un congrès
hal-04316671v1
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Application of the Double Source Switching Test to GaN HEMTs
Tamiris Grossl Bade
,
Maroun Alam
,
Hervé Morel
,
Dominique Planson
25th Conference on Power Electronics and Applications (and Exhibition), EPE ’23 (IEEE) ECCE Europe (Energy Conversion Congress and Expo Europe), Sep 2023, Aalborg, Denmark
Communication dans un congrès
hal-04225311v1
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Impact of Wide Band-Gap Semiconductors on the Design in Power Electronics
Hervé Morel
,
Maroun Alam
,
Pascal Bevilacqua
,
D. Tournier
,
Dominique Planson
Symposium on Advanced Technologies in Electrical Systems (SATES 2023), Mar 2023, Arras, France
Communication dans un congrès
hal-04224402v1
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Electrically Active Traps in Bipolar 10 kV 8 A Silicon Carbide (SiC) PiN Diodes
P Vigneshwara Raja
,
Christophe Raynaud
,
Besar Asllani
,
Herve Morel
,
Dominique Planson
International Symposium On Semiconductor Materials and Devices ISSMD 2022, Dec 2022, Bhubaneswar, India
Communication dans un congrès
hal-03990840v1
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Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses
Maroun Alam
,
Hervé Morel
,
Luong Viêt Phung
,
Dominique Planson
,
A. Yvon
Communication dans un congrès
hal-03887865v1
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Optimized Junction Termination Extension and Ring System for 11 kV 4H-SiC BJT
Ali Ammar
,
Mihai Lazar
,
Bertrand Vergne
,
Sigo Scharnholz
,
Luong Viêt Phung
Communication dans un congrès
hal-03856578v1
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Vertical current temperature analysis of GaN-on-Si epitaxy through analytical modelling
Florian Rigaud-Minet
,
Julien Buckley
,
William Vandendaele
,
Stéphane Becu
,
Matthew Charles
SSDM 2022 - 2022 International conference on solid state devices and materials, Sep 2022, Chiba, Japan
Communication dans un congrès
cea-03875079v1
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Flatness-Based Control of an m-Branch Power Flow Controller for Meshed DC Microgrids
Xuefang Lin-Shi
,
Tanguy Simon
,
Jean-François Trégouët
,
Hervé Morel
Communication dans un congrès
hal-03375502v1
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Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications
Joao Oliveira
,
Ali Alhoussen
,
Florent Loiselay
,
Hervé Morel
,
Dominique Planson
Communication dans un congrès
hal-03260519v1
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Robust Output Set-Point Tracking for a Power Flow Controller via Forwarding Design
Tanguy Simon
,
Mattia Giaccagli
,
Jean-François Trégouët
,
Daniele Astolfi
,
Vincent Andrieu
Communication dans un congrès
hal-03375498v1
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|
Modelling and Control of a Power Flow Controller for DC Microgrids
Tanguy Simon
,
Jean-François Trégouët
,
Hervé Morel
,
Xuefang Lin-Shi
Communication dans un congrès
hal-03360965v1
|
|
Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs
Joao Oliveira
,
Florent Loiselay
,
Hervé Morel
,
Dominique Planson
Communication dans un congrès
hal-02945913v1
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|
Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor
Besar Asllani
,
Hervé Morel
,
Pascal Bevilacqua
,
Dominique Planson
Communication dans un congrès
hal-02945919v1
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|
Analysis of Parasitic Elements in Power Modules Based on GaN Components
Joao Oliveira
,
Hervé Morel
,
Dominique Planson
,
Florent Loiselay
PCIM Europe 2020, Jul 2020, Nuremberg, Germany
Communication dans un congrès
hal-02945892v1
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|
Static characteristics of 5 kV SiC BJTs and Darlington’s
Besar Asllani
,
Dominique Planson
,
Hervé Morel
,
T Lagier
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan
Communication dans un congrès
hal-02428513v1
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|
An investigation of current distribution over four GaN HEMTs in parallel configurations
Thilini Wickramasinghe
,
Cyril Buttay
,
Christian Martin
,
Hervé Morel
,
Pascal Bevilacqua
Communication dans un congrès
hal-02405882v1
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|
V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate
Besar Asllani
,
Alberto Castellazzi
,
Oriol Aviño Salvado
,
Asad Fayyaz
,
Hervé Morel
Communication dans un congrès
hal-02099781v1
|
|
Benefits of GaN transistors and embedding in PCB laminates
Cyril Buttay
,
Christian Martin
,
Charles Joubert
,
Hervé Morel
,
Bruno Allard
SIA Power Train & Electronics, Jun 2019, Paris, France
Communication dans un congrès
hal-02291496v1
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|
A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices
Thilini Wickramasinghe
,
Bruno Allard
,
Cyril Buttay
,
Charles Joubert
,
Christian Martin
Communication dans un congrès
hal-02405883v1
|
|
Packaging Solution for SiC Power Modules with a Fail-to-Short Capability
Ilyas Dchar
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-02076181v1
|
|
Microréseaux DC : avantages des réseaux maillés
Hervé Morel
,
Loïc Michel
,
Guy Clerc
,
Pascal Bevilacqua
,
Mohamed Barara
Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France
Communication dans un congrès
hal-02134229v1
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|
Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes
Besar Asllani
,
Dominique Planson
,
Pascal Bevilacqua
,
J B Fonder
,
B Choucoutou
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2
Communication dans un congrès
hal-01985994v1
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|
SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation
Besar Asllani
,
Hervé Morel
,
Dominique Planson
,
Asad Fayyaz
,
Alberto Castellazzi
Communication dans un congrès
hal-01984359v1
|
|
Robustness study of 1700 V 45 mΩ SiC MOSFETs
Quentin Molin
,
Mehdi Kanoun
,
Christophe Raynaud
,
Hervé Morel
Communication dans un congrès
hal-01942728v1
|
|
High-Voltage SiC-JFET Fabrication and Full Characterization
Besar Asllani
,
Pascal Bevilacqua
,
A. Zaoui
,
G Grosset
,
Dominique Planson
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5
Communication dans un congrès
hal-02428523v1
|
|
Repetitive short-circuit measurement on SiC MOSFET
Quentin Molin
,
Christophe Raynaud
,
Mehdi Kanoun
,
Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom
Communication dans un congrès
hal-01980834v1
|
|
Subthreshold Drain current hysteresis of planar SiC MOSFETs
Besar Asllani
,
A Castellazzi
,
Dominique Planson
,
Hervé Morel
ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04
Communication dans un congrès
hal-02428531v1
|
|
An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module
Malorie Hologne
,
Pascal Bevilacqua
,
Bruno Allard
,
Guy Clerc
,
Hervé Morel
Communication dans un congrès
hal-01532058v1
|
|
Robustness of SiC MOSFET under avalanche conditions
Ilyas Dchar
,
Marion Zolkos
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-01535735v1
|
|
Evaluation of printed-circuit boards materials for high temperature operation
Oriol Aviño Salvado
,
Wissam Sabbah
,
Cyril Buttay
,
Hervé Morel
,
Pascal Bevilacqua
HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom
Communication dans un congrès
hal-01565131v1
|
|
Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques
Oriol Aviño Salvado
,
Hervé Morel
,
Cyril Buttay
JCGE, May 2017, Arras, France. pp.146345
Communication dans un congrès
hal-01534712v1
|
|
Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors
Hugo Reynes
,
Cyril Buttay
,
Hervé Morel
Communication dans un congrès
hal-01645029v1
|
|
Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids
Mohamed Barara
,
Hervé Morel
,
Guy Clerc
International conference on components and systems for DC grids, Mar 2017, Grenoble, France
Communication dans un congrès
hal-01793569v1
|
|
Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker
Thi Thuong Huyen Ma
,
Hamed Yahoui
,
Fedia Baccar El Boubkari
,
Hervé Morel
,
Hoang-Giang Vu
COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique
Communication dans un congrès
hal-01639199v1
|
|
Improved Layout of Inverter for EMC Analysis
Ousseynou Yade
,
Christian Martin
,
Christian Vollaire
,
Arnaud Bréard
,
Marwan Ali
More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France
Communication dans un congrès
hal-01715021v1
|
|
Analyse de la robustesse des MOSFET SiC pour les applications diode-less
Oriol Aviño Salvado
,
Cheng Chen
,
Cyril Buttay
,
Hervé Morel
,
Denis Labrousse
Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France
Communication dans un congrès
hal-01361711v1
|
|
State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications
Layal Ghossein
,
Florent Morel
,
Hervé Morel
,
Piotr Dworakowski
PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-01316570v1
|
|
Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices
Mihai Lazar
,
Davy Carole
,
Christophe Raynaud
,
Gabriel Ferro
,
Selsabil Sejil
Communication dans un congrès
hal-01388019v1
|
|
Considerations for High Temperature Power Electronics
Bruno Allard
,
Cyril Buttay
,
Christian Martin
,
Hervé Morel
18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia
Communication dans un congrès
hal-01372146v1
|
|
High temperature operation of SiC transistors
Cyril Buttay
,
Marwan Ali
,
Oriol Aviño Salvado
,
Hervé Morel
,
Bruno Allard
Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States
Communication dans un congrès
hal-01373030v1
|
|
Vertical termination filled with adequate dielectric for SiC devices in HVDC applications
T. Nguyen-Bui
,
Mihai Lazar
,
Jean-Louis Augé
,
Hervé Morel
,
L. Phung
International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy
Communication dans un congrès
hal-02138529v1
|
|
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Mickael Petit
,
Cyril Buttay
ESREF, Oct 2015, Toulouse, France. pp.1708-1713
Communication dans un congrès
hal-01700463v1
|
|
Robustness of SiC MOSFETs in short-circuit mode
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Mickaël Petit
,
Cyril Buttay
PCIM Europe 2015, May 2015, Nuremberg, Germany
Communication dans un congrès
hal-01196528v1
|
|
Estimation des pertes dans les transistors bipolaires SiC
Cheng Chen
,
Denis Labrousse
,
Stéphane Lefebvre
,
Cyril Buttay
,
Hervé Morel
Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065220v1
|
|
Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique
Marc Petit
,
Seddik Bacha
,
Xavier Guillaud
,
Hervé Morel
,
Dominique Planson
1er Symposium de Génie Électrique (SGE 2014), Jul 2014, Cachan, France
Communication dans un congrès
hal-01065154v1
|
|
4H-SiC P-N junctions realized by VLS for JFET lateral structures
Selsabil Sejil
,
Farah Laariedh
,
Mihai Lazar
,
Davy Carole
,
Christian Brylinski
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès
hal-02133686v1
|
|
Power Loss Estimation in SiC Power BJTs
Chen Cheng
,
Denis Labrousse
,
Stéphane Lefebvre
,
Hervé Morel
,
Cyril Buttay
PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p
Communication dans un congrès
hal-00997718v1
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|
Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes
Xavier Fonteneau
,
Florent Morel
,
Cyril Buttay
,
Hervé Morel
,
Philippe Lahaye
Communication dans un congrès
hal-00829353v1
|
|
SiC Vertical JFET Pure Diode-Less Inverter Leg
Rémy Ouaida
,
Xavier Fonteneau
,
Fabien Dubois
,
Dominique Bergogne
,
Florent Morel
Communication dans un congrès
hal-00829343v1
|
|
Analysis of the SiC VJFET gate punch-through and its dependence with the temperature
Fabien Dubois
,
Dominique Bergogne
,
Dominique Tournier
,
Cyril Buttay
,
Régis Meuret
Communication dans un congrès
hal-00874655v1
|
|
Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode
Xavier Fonteneau
,
Florent Morel
,
Hervé Morel
,
Philippe Lahaye
,
Eliana Rondon
Communication dans un congrès
hal-00739006v1
|
|
An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators
Dominique Bergogne
,
Fabien Dubois
,
Christian Martin
,
Khalil El Falahi
,
Luong Viet Phung
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760366v1
|
|
Temperature dependence of silicon and silicon carbide power devices: An experimental analysis
Mahbouba Amairi
,
Sameh Mtimet
,
Tarek Ben Salah
,
Hervé Morel
Communication dans un congrès
hal-00747425v1
|
|
3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules
Bassem Mouawad
,
Cyril Buttay
,
Maher Soueidan
,
Hervé Morel
,
Bruno Allard
7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438
Communication dans un congrès
hal-00707741v1
|
|
Report de puce par frittage d'argent - mise en oeuvre et analyse
Amandine Masson
,
Wissam Sabbah
,
Raphaël Riva
,
Cyril Buttay
,
Stephane Azzopardi
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61)
Communication dans un congrès
hal-00729156v1
|
|
High Temperature Ageing of Fe-based Nanocrystalline Ribbons
Christian Martin
,
Rémi Robutel
,
Cyril Buttay
,
Fabien Sixdenier
,
Pascal Bevilacqua
HiTEC 2012, May 2012, Albuquerque, United States. 6p
Communication dans un congrès
hal-00760373v1
|
|
Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC
Xavier Fonteneau
,
Florent Morel
,
Hervé Morel
,
Philippe Lahaye
,
Didier Léonard
14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24)
Communication dans un congrès
hal-00729345v1
|
|
Thermal Runaway Robustness of SiC VJFETs
Rémy Ouaida
,
Cyril Buttay
,
Anh Dung Hoang
,
Raphaël Riva
,
Dominique Bergogne
CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès
hal-00759975v2
|
|
A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs
Fabien Dubois
,
Stéphane Sorel
,
Sonia Dhokkar
,
Régis Meuret
,
Dominique Bergogne
Communication dans un congrès
hal-00739021v1
|
|
Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications
Bassem Mouawad
,
Cyril Buttay
,
Maher Soueidan
,
Hervé Morel
,
Vincent Bley
Communication dans un congrès
hal-00707820v1
|
|
High-temperature behavior of SiC power diodes
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Mihai Lazar
,
Gabriel Civrac
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629225v1
|
|
Thermal Requirements of SiC Power Devices
Cyril Buttay
,
Christophe Raynaud
,
Hervé Morel
,
Gabriel Civrac
,
Marie-Laure Locatelli
6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France
Communication dans un congrès
hal-00672631v1
|
|
A multi-physics model of the VJFET with a lateral channel
Hervé Morel
,
Youness Hamieh
,
Dominique Tournier
,
Rémi Robutel
,
Fabien Dubois
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629220v1
|
|
High-temperature die-attaches for SiC power devices
Amandine Masson
,
Cyril Buttay
,
Hervé Morel
,
Christophe Raynaud
,
Stanislas Hascoët
EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161
Communication dans un congrès
hal-00672602v1
|
|
Ultrafast safety system to turn-off normally on SiC JFETs
Fabien Dubois
,
Dominique Bergogne
,
Damien Risaletto
,
Rémi Perrin
,
Abderrahime Zaoui
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629232v1
|
|
Active protections for normally-on SiC JFETs
Fabien Dubois
,
Damien Risaletto
,
Dominique Bergogne
,
Hervé Morel
,
Cyril Buttay
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD
Communication dans un congrès
hal-00629227v1
|
|
Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization
Cyril Buttay
,
Amandine Masson
,
Jianfeng Li
,
Mark C. Johnson
,
Mihai Lazar
HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7
Communication dans un congrès
hal-00672619v1
|
|
Integrated common mode capacitors for SiC JFET inverters
Rémi Robutel
,
Christian Martin
,
Hervé Morel
,
Paulo Mattavelli
,
Dushan Boroyevitch
Communication dans un congrès
hal-00618665v1
|
|
Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications
Dominique Tournier
,
Pierre Brosselard
,
Christophe Raynaud
,
Mihai Lazar
,
Hervé Morel
CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD
Communication dans un congrès
hal-00661500v1
|
|
Higher temperature power electronics for larger-scale mechatronic integration
Bruno Allard
,
Cyril Buttay
,
Dominique Tournier
,
Rémi Robutel
,
Jean-François Mogniotte
Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination)
Communication dans un congrès
hal-00687139v1
|
|
SIC inverter optimization for high temperature applications
Régis Meuret
,
Olivier Berry
,
Fabien Dubois
,
Youness Hamieh
,
Stéphane Raël
27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France
Communication dans un congrès
hal-02937166v1
|
|
Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter
Rémi Robutel
,
Christian Martin
,
Hervé Morel
,
Cyril Buttay
,
Dominique Bergogne
HiTEC 2010, May 2010, Albuquerque, United States. pp.000236
Communication dans un congrès
hal-00485284v1
|
|
Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON)
Dominique Bergogne
,
Olivier Berry
,
Sonia Dhokkar
,
Youness Hamieh
,
Farid Meibody-Tabar
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618715v1
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Normally-On SiC JFETs in power converters: Gate driver and safe operation
Dominique Bergogne
,
Damien Risaletto
,
Fabien Dubois
,
Asif Hammoud
,
Hervé Morel
6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD
Communication dans un congrès
hal-00629214v1
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High Temperature Inverter for Airborne Application
Fabien Dubois
,
Dominique Bergogne
,
Damien Risaletto
,
Rémi Robutel
,
Hervé Morel
HiTEC 2010, May 2010, Albuquerque, United States. pp.000222
Communication dans un congrès
hal-00485279v1
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Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance
Damien Risaletto
,
Dominique Bergogne
,
Fabien Dubois
,
Hervé Morel
,
Cédric Ruby
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618693v1
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Caractérisation des non-linéarités dans les condensateurs céramiques haute température
Rémi Robutel
,
Christian Martin
,
Cyril Buttay
,
Hervé Morel
,
Régis Meuret
13ème EPF, Jun 2010, Saint-Nazaire, France
Communication dans un congrès
hal-00618657v1
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Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages
Dominique Bergogne
,
Asif Hammoud
,
Dominique Tournier
,
Cyril Buttay
,
Youness Amieh
EPE, Sep 2009, Barcelone, France. pp.1--8
Communication dans un congrès
hal-00446059v1
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State of the art of High Temperature Power Electronics
Cyril Buttay
,
Dominique Planson
,
Bruno Allard
,
Dominique Bergogne
,
Pascal Bevilacqua
Microtherm, Jun 2009, Lodz, Poland. pp.8-17
Communication dans un congrès
hal-00413349v1
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SiC JFET for high temperature power switches
Dominique Bergogne
,
Dominique Tournier
,
Rami Mousa
,
Mohsen Shafiee Khoor
,
Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4
Communication dans un congrès
hal-00373058v1
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Modeling and high temperature characterization of SiC-JFET
Rami Mousa
,
Dominique Planson
,
Hervé Morel
,
Bruno Allard
,
Christophe Raynaud
Communication dans un congrès
hal-00369420v1
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Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique
Nicolas Dheilly
,
Dominique Planson
,
Pierre Brosselard
,
Hassan Jawad
,
Pascal Bevilacqua
Communication dans un congrès
hal-00391369v1
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Current limiting with SiC JFET structures
Dominique Tournier
,
Dominique Bergogne
,
Asif Hamoud
,
Dominique Planson
,
Rami Mousa
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5
Communication dans un congrès
hal-00373046v1
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SiC Power Semiconductor Devices for new Applications in Power Electronics
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
,
Nicolas Dheilly
,
Hervé Morel
Communication dans un congrès
hal-00373016v1
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Towards an Airborne High Temperature SiC Inverter
Dominique Bergogne
,
Herve Morel
,
Dominique Planson
,
Dominique Tournier
,
Pascal Bevilacqua
Communication dans un congrès
hal-00467659v1
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High Power Density SiC 450A AccuMOSFET for Current Limiting Applications
Dominique Tournier
,
Pascal Bevilacqua
,
Dominique Planson
,
Hervé Morel
,
Pierre Brosselard
Communication dans un congrès
hal-00391376v1
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Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters
Dominique Bergogne
,
Hervé Morel
,
Dominique Tournier
,
Bruno Allard
,
Dominique Planson
5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2
Communication dans un congrès
hal-00372982v1
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VHDL-AMS model of IGBT for electro-thermal simulation
Their Ibrahim
,
Bruno Allard
,
Hervé Morel
,
Sabrine M'Rad
Communication dans un congrès
hal-00369426v1
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Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
Tarek Ben Salah
,
Damien Risaletto
,
Christophe Raynaud
,
Kamel Besbes
,
Sami Ghedira
Communication dans un congrès
hal-00369457v1
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Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies
Tarek Ben Salah
,
Damien Risaletto
,
Christophe Raynaud
,
Kamel Besbes
,
Dominique Bergogne
Communication dans un congrès
hal-02958620v1
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High temperature characterization of SiC-JFET and modelling
Rami Mousa
,
Dominique Planson
,
Hervé Morel
,
Christophe Raynaud
Communication dans un congrès
hal-00369458v1
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New Applications in Power Electronics Based on SiC Power Devices
Hervé Morel
,
Dominique Bergogne
,
Dominique Planson
,
Bruno Allard
,
Régis Meuret
Communication dans un congrès
hal-02958610v1
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Les enjeux de la haute température
Christian Martin
,
Hervé Morel
,
Dominique Bergogne
,
Bruno Allard
11ème EPF, Jul 2006, Grenoble, France
Communication dans un congrès
hal-00412423v1
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High temperature operating converter
Dominique Bergogne
,
Pascal Bevilacqua
,
Dominique Planson
,
Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. pp.201-204
Communication dans un congrès
hal-00413394v1
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Analytic thermal modelling of power electronic components: The Diffusive Representation
Sabrine M'Rad
,
Bruno Allard
,
Anis Ammous
,
Nouri Massmoudi
,
Hervé Morel
4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.)
Communication dans un congrès
hal-00413392v1
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Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions
Cyril Buttay
,
Olivier Brevet
,
Bruno Allard
,
Dominique Bergogne
,
Hervé Morel
Communication dans un congrès
hal-00138894v1
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Bond Graph Modeling of Current Diffusion in Magnetic Cores
Hervé Morel
,
Bruno Allard
,
Sabrine M'Rad
,
Cyril Buttay
,
Kaiçar Ammous
ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91
Communication dans un congrès
hal-00412621v1
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Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS
François Pêcheux
,
Bruno Allard
,
Christophe Lallement
,
Alain Vachoux
,
Hervé Morel
ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155
Communication dans un congrès
hal-01486590v1
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Fast over-current protection of high power IGBT modules
Pierre Lefranc
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
Jean-François Roche
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413400v1
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Power converter's optimisation, analysis and design
Hassan Helali
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
Pascal Bevilacqua
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413401v1
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300 °C operating junction temperature inverter leg investigations
Dominique Bergogne
,
Pascal Bevilacqua
,
Sabrine M'Rad
,
Dominique Planson
,
Hervé Morel
EPE, Sep 2005, Dresden, Germany
Communication dans un congrès
hal-00413402v1
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Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge
Cyril Buttay
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
René Ehlinger
Communication dans un congrès
hal-00413325v1
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A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge
Cyril Buttay
,
Dominique Bergogne
,
Hervé Morel
,
Bruno Allard
,
René Ehlinger
EPE, Sep 2003, Toulouse, France. pp.1-10
Communication dans un congrès
hal-00413309v1
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Evaluation of losses in a switching cell using the finite element method. Comparison between silicon and silicon carbide components
Dominique Planson
,
S. Margenat
,
F. Nallet
,
Hervé Morel
,
Marie-Laure Locatelli
3rd International Conference on Power Electronics and Motion Control, Aug 2000, Beijing, China. pp.241-245, ⟨10.1109/IPEMC.2000.885364⟩
Communication dans un congrès
hal-04386919v1
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