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Hervé Morel - Curriculum Vitae


Hervé MOREL,

 Born, June 7th, 1959 at Reims, France.

Coordinates:

INSA de Lyon - Laboratoire AMPERE,

Bat. Léonard de Vinci

21 av. Jean Capelle

69621 Villeurbanne Cedex

Herve.Morel@insa-lyon.fr

Degrees:

  • 1994, Habilitation to conduct researches (Habilitation à diriger des recherche) delivered by the INSA de Lyon.

  • 1985, PhD at “Ecole Centrale de Lyon”, "Electrical conduction through grain boundaries in the polysilicon”

  • 1982, Engineer Degree from “Ecole Centrale de Lyon”, 1982, Ecully, France.

Professional Experience

  • Since October2004, Senior Researcher(DR) at the CNRS (http://www.cnrs.fr) , AMPERE lab.1, joint unit #5005.

  • Since January 2015, Scientific Director of the Power Conversion Technology Program (timeshare 25 %) at Supergrid Institute (http://www.supergrid-institute.com)

  • January 2012 – April 2014, Program Officer (timeshare 50 %), for PROGELEC program (Sustainable Electricity Production and Management) at the ANR2, The French National Research Agency.

 

  • From October 1985, Researcher(CR) at the CNRS, CEGELY laboratory, joint unit #5005. (17 years)

Significant performance

Experience

 His research area includes power semiconductor device characterization and modeling, Power Electronic System Design & Integration based on the use of Wide Bandgap Power Semiconductor Devices. The main application areas are the high efficiency power electronics (for the More Electric Aircraft applications and embedded systems) and the high voltage power electronics (particularly for supergrid applications). Multiphysics modeling of power semiconductor devices and power converters, particularly based on bond graphs. Tools and Methodologies for modeling and simulating power components and power converters (Modeling languages MAST et VHDL-AMS).

 

He is involved in many research programs with industrial partners.

 Current scientific projectsinclude : wide band gap power electronics for embeddedand stationary applications and high voltage power electronicstransmissionand distribution of electricity. A new contribution, concerns meshed DC microgrids for Tertiary Building (C3µ/ANR project).

 

research activities

  • 2011-2013, contribution to writing and starting of the project proposal “SuperGrid”3 in the Framework of the program "Investing for the Future", French Government.

  • 2013-2017, scientific coordinator for Ampère/INSA in the project GENOME/PREMICE (SiC Power Semiconductor Devices Robustness for aeronautic applications).

  • November 2007-September 2011, coordinator of the Power Electronic workpackage in the SEFORA program (Smart EMA For Operations in Rough Atmospheres, Aeronautics).

  • January 2006: coordinator of the “white” program ANR (http://www.agence-nationale-recherche.fr) CO-THT, for the very high temperature (400°C) power electronics. The different actions concern: design of a SiC integrated-circuit for driving SiC-JFET power devices, high temperature packaging and passivation, high temperature capacitors, inductors and transformers.

  • January 2003: leader of the French Working Group #104 on the “modeling and design of integrated power systems”

  • January 2003-2007: leader of the team, “integrated power system” at the CEGELY laboratory. (10 researchers, assistant-professors and professors + 15 PhD students).

  • 1992-1995: coordinator of the “design” French-group in the European Program Prochip-PROMETHEUS.

  • 1988-1992: developing PACTE simulator based on bond graph technique.

management activities

  • January 2006-2011: head manager of the French Network of the CNRS, SEEDS4, in Electrical Engineering. SEEDS includes about 400 researchers, assistant-professors and professors.

  • January 2004, January 2006: manager of the French Network of the CNRS, ISP3D at the CNRS, #2084 (3D power system integration). ISP3D includes about 40 researchers, assistant-professors and professors.

  • January 2003: manager of the CEGELY laboratory at the INSA-Lyon. (14 researchers, assistant-professors and professors + 3 post-docs + 16 PhD students).

  • December 2002- December 2005: Member of the Scientific Council of the CNRS department of Communication and Information Science and Technology.

  • 2009-2011, Elected Member of the INSA Lyon Scientific Council.

Lectures

 current

  • From 2014, HVDC, 4GE, Departement of electrical engineering, INSA Lyon and Univ. Lyon 1 (12 h/year).

  • From 2003 : Tutorial « Integration of Power Electronic Systems » PhD student training, Lyon, (2 h/year).

  • From 2014 : Tutorial « HVDC : Whyenergy transmission in direct current ? » PhD student training, Lyon, (2 h/year).

 

past

  • 2008-2010: In charge of the Power Engineering Lecture - Master at INSA Lyon.

  • 1999-2006: In charge of Electricity lectures at the ITECH engineer school (http://www.itech.fr) .

  • 1995-2015: In charge of lectures « modeling and numerical simulation of analog systems » at the master of electrical engineering, Lyon.

Expertises

  • 2009-2011 expert for the European Commission in the framework of Clean-Sky (aeronautics, JTI)

  • 2009-2011 member of a scientific examination committee for the DGA

  • From 2011- member of the scientific council of the OMNT.

  • From 2012 – external reviewer for Clean-Sly/SGO

  • From 2003 – referee in IEEE Trans. On Power Electronics and some others journals and conferences.

  • Member of some scientific council of international conferences : SETIT, CISP, CoSyS-DC, MGE

Memberships

IEEE senior member, SEE senior member.

Scientific Tracking records

  • 107 publications in international journals, 150 publications in international conferences, 37 PhD directions, 32 times in a PhD board of examiners (25 times as a referee).

  • Senior Member IEEE, Senior Member SEE,

  • Scientific Excellence Premium (Prime d'Excellence Scientifique) from the CNRS, PES, for 2011-2014 period.

  • Citations: http://scholar.google.fr/citations?user=oRloFcUAAAAJ&hl=en

  • « Special Award » , SAFRAN Power Electronic Center, SPEC’2009 « More Electric Aircraft » 18 - 19 november 2009 at Evry Genocentre.

  • Medal GENELEC 2010, Concordat GENELEC organized bythe Defense Department, 27 jan. 2011.

 

Exploitation & Dissemination

PACTE is a multiphysic simulator base on the bond graph methodology. It development has started in 1988 in the framework of the European project PROMETEUS/PROCHIP. PACTE was appliedby the CNRS at the APP a French registration program agency, on August 31, 2006, thenon December 3, 2012. PACTE is diffused on CECILL Open Source License.

 

 

 

 

 

 

 


Journal articles79 documents

  • Besar Asllani, Pascal Bevilacqua, Hervé Morel, Dominique Planson, Luong Viet Phung, et al.. Static and switching characteristics of 10 kV-class Silicon Carbide Transistors and Darlingtons. Materials Science Forum, Trans Tech Publications Inc., 2020, 1004, pp.923-932. ⟨10.4028/www.scientific.net/MSF.1004.923⟩. ⟨hal-02931290⟩
  • Besar Asllani, Hervé Morel, Luong Viêt Phung, Dominique Planson. 10 kV Silicon Carbide PiN Diodes-From Design to Packaged Component Characterization. Energies, MDPI, 2019, ⟨10.3390/en12234566⟩. ⟨hal-02398585⟩
  • Layachi Boussouar, Hervé Morel, Bruno Allard, Cyril Buttay. Analysis and modelling of the role of temperature in the static forward characteristics of an IGBT. International Journal of Power Electronics, Inderscience, 2019, 10 (3), pp.187. ⟨10.1504/ijpelec.2019.099337⟩. ⟨hal-02121811⟩
  • Oriol Aviñó-Salvadó, Besar Asllani, Cyril Buttay, Christophe Raynaud, Hervé Morel. Extraction of the 4H-SiC/SiO₂ Barrier Height Over Temperature. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 67 (1), pp.63 - 68. ⟨10.1109/TED.2019.2955181⟩. ⟨hal-02418097⟩
  • Besar Asllani, Pascal Bevilacqua, Abderrahime Zaoui, Gregory Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.688-692. ⟨10.4028/www.scientific.net/MSF.963.688⟩. ⟨hal-02060228⟩
  • Besar Asllani, Dominique Planson, Pascal Bevilacqua, Jean-Baptiste Fonder, Beverley Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.567-571. ⟨10.4028/www.scientific.net/MSF.963.567⟩. ⟨hal-02060334⟩
  • Besar Asllani, Alberto Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2019, 963, pp.184-188. ⟨10.4028/www.scientific.net/MSF.963.184⟩. ⟨hal-02060341⟩
  • Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson. VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.604 - 609. ⟨10.1016/j.microrel.2018.06.047⟩. ⟨hal-01889461⟩
  • Oriol Aviño Salvado, C. Cheng, Cyril Buttay, Hervé Morel, D Labrousse, et al.. SiC MOSFETs robustness for diode-less applications. EPE Journal - European Power Electronics and Drives, Taylor & Francis, 2018, pp.1 - 8. ⟨10.1080/09398368.2018.1456836⟩. ⟨hal-01844980⟩
  • Oriol Aviño Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre. Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectronics Reliability, Elsevier, 2018, 88-90, pp.636-640. ⟨10.1016/j.microrel.2018.06.033⟩. ⟨hal-01895791⟩
  • Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes. The Role of a Wiring Model in Switching Cell Transients: the PiN Diode Turn-off Case. Journal of Power Electronics, 2017, 17 (2), pp.561 - 569. ⟨10.6113/jpe.2017.17.2.561⟩. ⟨hal-01626139⟩
  • Hatem Garrab, Atef Jedidi, Hervé Morel, Kamel Besbes. A Novel Approach to Accurately Determine the tq Parameter of Thyristors. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2017, 64 (1), pp.206 - 216. ⟨10.1109/tie.2016.2609381⟩. ⟨hal-01617496⟩
  • Aymen Ammouri, Tarek Ben Salah, Hervé Morel. A spiral planar inductor: An experimentally verified physically based model for frequency and time domains. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, 2017, pp.e2272. ⟨10.1002/jnm.2272⟩. ⟨hal-01626146⟩
  • Oriol Aviño Salvado, Wissam Sabbah, Cyril Buttay, Hervé Morel, Pascal Bevilacqua. Evaluation of printed-circuit boards materials for high temperature operation. Journal of Microelectronics and Electronic Packaging, International Microelectronics And Packaging Society (IMAPS), 2017, 14 (4), ⟨10.4071/imaps.516313⟩. ⟨hal-01674483⟩
  • Thi Thuong Huyen Ma, Hamed Yahoui, Hoang Vu, Nicolas Siauve, Hervé Morel. A Control Strategy of DC Building Microgrid Connected to the Neighborhood and AC Power Network. Buildings, Stamats Communications, Inc., 2017, 7 (2), ⟨10.3390/buildings7020042⟩. ⟨hal-01626141⟩
  • Ilyas Dchar, Cyril Buttay, Hervé Morel. SiC power devices packaging with a short-circuit failure mode capability. Microelectronics Reliability, Elsevier, 2017, ⟨10.1016/j.microrel.2017.07.003⟩. ⟨hal-01562547⟩
  • Wissam Sabbah, Faical Arabi, Oriol Aviño Salvado, Cyril Buttay, Loic Théolier, et al.. Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. Microelectronics Reliability, Elsevier, 2017, ⟨10.1016/j.microrel.2017.06.091⟩. ⟨hal-01562549⟩
  • Wissam Sabbah, Pierre Bondue, Oriol Aviño Salvado, Cyril Buttay, Héìène Frémont, et al.. High temperature ageing of microelectronics assemblies with SAC solder joints. Microelectronics Reliability, Elsevier, 2017, ⟨10.1016/j.microrel.2017.06.065⟩. ⟨hal-01564755⟩
  • Nour Halawani, Jean-Louis Augé, Hervé Morel, O. Gain, S. Pruvost. Electrical, thermal and mechanical properties of poly-etherimide epoxy-diamine blend. Composites Part B: Engineering, Elsevier, 2017, -, 110 (-), pp.530 - 541. ⟨10.1016/j.compositesb.2016.11.022⟩. ⟨hal-01626136⟩
  • Thi Thanh Huyen Nguyen, Mihai Lazar, Jean-Louis Augé, Hervé Morel, Luong Viet Phung, et al.. Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.982-985. ⟨10.4028/www.scientific.net/MSF.858.982⟩. ⟨hal-01391838⟩
  • Ilyas Dchar, Cyril Buttay, Hervé Morel. Avalanche robustness of SiC Schottky diode. Microelectronics Reliability, Elsevier, 2016, ⟨10.1016/j.microrel.2016.07.086⟩. ⟨hal-01373039⟩
  • Atef Jedidi, Hatem Garrab, Hervé Morel, Kamel Besbes. A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2015, 62 (4), ⟨10.1109/TIE.2014.2356440⟩. ⟨hal-01388299⟩
  • Sameh Mtimet, Walid Ben Salah, Salah Tarek Ben, Ferid Kourda, Hervé Morel. An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, 2015, 28 (3), pp. 287-300. ⟨10.1002/jnm.2005⟩. ⟨hal-01388318⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789 - 792. ⟨10.4028/www.scientific.net/MSF.821-823.789⟩. ⟨hal-01387983⟩
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, et al.. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectronics Reliability, Elsevier, 2015, pp.6. ⟨10.1016/j.microrel.2015.06.097⟩. ⟨hal-01198584⟩
  • Mihai Lazar, Selsabil Sejil, L. Lalouat, Christophe Raynaud, D. Carole, et al.. P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices. Romanian Journal of Information Science and Technology, Romanian Academy, 2015, 18 (4), pp.329-342. ⟨hal-01626119⟩
  • Anis Ammous, Hervé Morel. LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications. Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. ⟨10.4236/sgre.2014.54007⟩. ⟨hal-01005973⟩
  • Sami Ghedira, Cyril Buttay, Hervé Morel, Kamel Besbes. Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET. European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), pp.20103. ⟨10.1051/epjap/2014130533⟩. ⟨hal-01005929⟩
  • Hervé Morel, Aymen Ammouri, Walid Ben Salah, Sofiane Khachroumi, Tarek Ben Salah, et al.. Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design. European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), pp.20901. ⟨10.1051/epjap/2014130430⟩. ⟨hal-01006044⟩
  • Rémi Robutel, Christian Martin, Cyril Buttay, Hervé Morel, Paulo Mattavelli, et al.. Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2013, PP (99), pp.1. ⟨10.1109/TPEL.2013.2279772⟩. ⟨hal-00874455⟩
  • Dominique Bergogne, Cyril Buttay, Rémi Robutel, Fabien Dubois, Rémy Ouaida, et al.. Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages. EPE Journal - European Power Electronics and Drives, Taylor & Francis, 2013, 23 (3), pp.5--12. ⟨hal-00997389⟩
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Die attach using silver sintering. Practical implementation and analysis. European Journal of Electrical Engineering, Lavoisier, 2013, 16 (3-4), pp.293-305. ⟨10.3166/ejee.16.293-305⟩. ⟨hal-00874465⟩
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.929-933. ⟨10.4028/www.scientific.net/MSF.740-742.929⟩. ⟨hal-00799884⟩
  • Cyril Buttay, Rémy Ouaida, Hervé Morel, Dominique Bergogne, Christophe Raynaud, et al.. Thermal Stability of Silicon Carbide Power JFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (12), pp.4191 - 4198. ⟨10.1109/TED.2013.2287714⟩. ⟨hal-00881667⟩
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal stability of silicon-carbide power diodes. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. ⟨10.1109/TED.2011.2181390⟩. ⟨hal-00672440⟩
  • Fabien Dubois, Dominique Bergogne, Cyril Buttay, Hervé Morel, Régis Meuret. Normally-On SIC JFETs: Active Protections. EPE Journal - European Power Electronics and Drives, Taylor & Francis, 2012, 22 (3), pp.6-13. ⟨hal-00821756⟩
  • Hanen Mejbri, Hervé Morel, Kaiçar Ammous, Anis Ammous. Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems. International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839. ⟨hal-00854436⟩
  • H. Mejbri, Kaiçar Ammous, Hervé Morel, Anis Ammous. Optimal design of power converter using multi-objective genetic algorithm. International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802. ⟨hal-00747409⟩
  • B. Omri, Kaiçar Ammous, Anis Ammous, Hervé Morel. Nonlinear average modeling of multilevel converters. International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163. ⟨hal-00747412⟩
  • Bassem Mouawad, Maher Soueidan, D. Fabregue, Cyril Buttay, Bruno Allard, et al.. Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding. IEEE Transactions on Components and Packaging Technologies, Institute of Electrical and Electronics Engineers, 2012, 2 (4), pp.553 - 560. ⟨10.1109/TCPMT.2012.2186453⟩. ⟨hal-00672244⟩
  • Bassem Mouawad, Maher Soueidan, D. Fabregue, Cyril Buttay, Vincent Bley, et al.. Full densification of Molybdenum powders using Spark Plasma Sintering. Metallurgical and Materials Transactions A, Springer Verlag/ASM International, 2012, pp.1-8. ⟨10.1007/s11661-012-1144-2⟩. ⟨hal-00707782⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. ⟨10.4028/www.scientific.net/AMR.324.46⟩. ⟨hal-00799902⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. ⟨10.1016/j.mseb.2010.10.003⟩. ⟨hal-00597432⟩
  • Kaiçar Ammous, Hervé Morel, Anis Ammous. Inverse Models of Voltage and Current Probes. IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2011, 60 (12), pp.3898 - 3906. ⟨10.1109/TIM.2011.2144710⟩. ⟨hal-00629210⟩
  • Rami Mousa, Dominique Planson, Hervé Morel. Characterization and VHDL-AMS modeling of SiC-JFET transistor. European Journal of Electrical Engineering, Lavoisier, 2011, 14 (1), pp.7-27. ⟨10.3166/EJEE.14.7-27⟩. ⟨hal-00747438⟩
  • Rémi Robutel, Christian Martin, Hervé Morel, Cyril Buttay, Nicolas Gazel, et al.. Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter. Journal of Microelectronics and Electronic Packaging, International Microelectronics And Packaging Society (IMAPS), 2011, 8 (1), pp.23-30. ⟨hal-00729066⟩
  • Tarek Ben Salah, Sameh Mtimet, Hervé Morel. SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation. Sensor letters, American Scientific Publishers, 2011, 9 (6), pp.2347-2350. ⟨10.1166/sl.2011.1762⟩. ⟨hal-00747433⟩
  • Tarek Ben Salah, Y. Lahbib, Hervé Morel. Modelling, analysis, and experimental study of SiC JFET body diode. European Physical Journal: Applied Physics, EDP Sciences, 2011, 53 (1), pp.Article Number: 10301. ⟨10.1051/epjap/2010100172⟩. ⟨hal-00579353⟩
  • Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of High Voltage and High Temperature Performances of Wide Bandgap Semiconductors for vertical Power Devices. Diamond and Related Materials, Elsevier, 2010, 19, pp.1-6. ⟨10.1016/j.diamond.2009.09.015⟩. ⟨hal-02186368⟩
  • Kaiçar Ammous, Hervé Morel, Anis Ammous. Analysis of Power Switching Losses Accounting Probe Modeling. IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2010, 59 (12), pp.3218 - 3226. ⟨10.1109/TIM.2010.2047302⟩. ⟨hal-00539180⟩
  • Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications. Sensors, MDPI, 2010, 10 (1), pp.388-399. ⟨10.3390/s100100388⟩. ⟨hal-00476196⟩
  • Olivier Berry, Youness Hamieh, Stéphane Rael, Farid Meibody-Tabar, Sébastien Vieillard, et al.. Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-6648, pp.957-960. ⟨10.4028/www.scientific.net/MSF.645-64⟩. ⟨hal-00539615⟩
  • Tarek Ben Salah, Hervé Morel, Sameh Mtimet. Toward SiC-JFETs modelling with temperature dependence. European Physical Journal: Applied Physics, EDP Sciences, 2010, 52 (2), pp.Article number 20301. ⟨10.1051/epjap/2010139⟩. ⟨hal-00539603⟩
  • Bruno Allard, Xavier Jordà, Pierre Bidan, Axel Rumeau, Hervé Morel, et al.. Reduced-Order Thermal Behavioral Model Based on Diffusive Representation. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2009, 24 (12), pp.2833-2846. ⟨10.1109/TPEL.2009.2028231⟩. ⟨hal-00476198⟩
  • Tarek Ben Salah, Mahbouba Amairi, Zina Sassi, Hervé Morel. Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes. Sensor letters, American Scientific Publishers, 2009, 7 (5), pp.707-711. ⟨10.1166/sl.2009.1135⟩. ⟨hal-00476197⟩
  • Pierre Lefranc, Dominique Planson, Hervé Morel, Dominique Bergogne. Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT). Solid-State Electronics, Elsevier, 2009, 53 (9), pp.944-954. ⟨10.1016/j.sse.2009.06.009⟩. ⟨hal-00476201⟩
  • Tarek Ben Salah, Y. Lahbib, Hervé Morel. SiC-VJFETs power switching devices: an improved model and parameter optimization technique. European Physical Journal: Applied Physics, EDP Sciences, 2009, 48 (3), pp.Article Number: 30305. ⟨10.1051/epjap/2009187⟩. ⟨hal-00476199⟩
  • Bruno Allard, Hatem Garrab, Tarek Ben Salah, Hervé Morel, Kaiçar Ammous, et al.. On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2008, 23 (1), pp.491-494. ⟨10.1109/TPEL.2007.911882⟩. ⟨hal-00313945⟩
  • Tarek Ben Salah, Cyril Buttay, Bruno Allard, Hervé Morel, Sami Ghedira, et al.. Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2007, 22 (1), pp.13-20. ⟨10.1109/TPEL.2006.886648⟩. ⟨hal-00135198⟩
  • Tarek Ben Salah, Sami Ghedira, Hatem Garrab, Hervé Morel, Damien Risaletto, et al.. A novel approach to extract accurate design parameters of PiN diode. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, 2007, 20 (6), pp.283-297. ⟨10.1002/jnm.646⟩. ⟨hal-00358834⟩
  • S. Abis, Kaiçar Ammous, Hervé Morel, Anis Ammous. Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes. International Review of Electrical Engineering, Praise Worthy Prize, 2007, 4 (2), pp.544-556. ⟨hal-00357024⟩
  • Tarek Ben Salah, Hatem Garrab, Sami Ghedira, Bruno Allard, Damien Risaletto, et al.. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.580-587. ⟨hal-00140085⟩
  • Cyril Buttay, Hervé Morel, Bruno Allard, Pierre Lefranc, Olivier Brevet. Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2006, 21 (3), pp.613-624. ⟨10.1109/TPEL.2006.872383⟩. ⟨hal-00138878⟩
  • Hatem Garrab, Bruno Allard, Hervé Morel, Kaiçar Ammous, Sami Ghedira, et al.. On the extraction of PiN diode design parameters for validation of integrated power converter design. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2005, 20 (3), pp.660-670. ⟨10.1109/TPEL.2005.846544⟩. ⟨hal-00140858⟩
  • Bruno Allard, Hatem Garrab, Hervé Morel. Electro-thermal simulation including a temperature distribution inside power semiconductor devices. International Journal of Electronics, Taylor & Francis, 2005, 92 (4), pp.189-213. ⟨hal-00140854⟩
  • Bruno Allard, Gérard Coquery, Laurent Dupont, Zoubir Khatir, Mihai Lazar, et al.. Composants à semi-conducteur de puissance pour des applications à haute température de fonctionnement. J3eA, 2005, 4 (HS), pp. 18-19. ⟨10.1051/bib-j3ea:2005610⟩. ⟨hal-01702019⟩
  • Hatem Garrab, Bruno Allard, Hervé Morel, Sami Ghedira, Kamel Besbes. Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Wiley, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560. ⟨hal-00140093⟩
  • Cyril Buttay, Tarek Ben Salah, Dominique Bergogne, Bruno Allard, Hervé Morel, et al.. Avalanche Behavior of Low-Voltage Power MOSFETs. IEEE Power Electronics Letters, Institute of Electrical and Electronics Engineers, 2004, 2 (3), pp.104-107. ⟨10.1109/LPEL.2004.839638⟩. ⟨hal-00138863⟩
  • Anis Ammous, M. Ayedi, Y. Ounajjar, Fayçal Sellami, Kaiçar Ammous, et al.. Developing an advanced PWM-switch model including semiconductor device non-linearities. European Physical Journal: Applied Physics, EDP Sciences, 2003, 21 (2), pp.107-120. ⟨hal-00140101⟩
  • Anis Ammous, Fayçal Sellami, Kaiçar Ammous, Hervé Morel, Bruno Allard, et al.. Developing an equivalent thermal model for discrete semiconductor packages. International Journal of Thermal Sciences, Elsevier, 2003, 42 (5), pp.533-539. ⟨hal-00140112⟩
  • Xuefang Lin-Shi, Jean-Marie Rétif, Bruno Allard, Hervé Morel. Non-linear control design for a boost converter using bond graphs. Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, SAGE Publications, 2002, 216 (I1), pp.1-11. ⟨hal-00140094⟩
  • Bruno Allard, Hervé Morel, Xuefang Lin-Shi, Jean-Marie Rétif. Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande. European Journal of Electrical Engineering, Lavoisier, 2002, 5 (1), pp.183-201. ⟨10.3166/rige.5.183-201⟩. ⟨hal-00403393⟩
  • Nouri Massmoudi, Djébé M'Baïri, Bruno Allard, Hervé Morel. On the validity of the standard SPICE model of the diode for simulation in power electronics. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2001, 48 (4), pp.864-867. ⟨hal-00140095⟩
  • Anis Ammous, Kaiçar Ammous, Hervé Morel, Bruno Allard, Dominique Bergogne, et al.. Electrothermal modeling of IGBT's: Application to short-circuit conditions. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2000, 15 (4), pp.778-790. ⟨hal-00140098⟩
  • Anis Ammous, Sami Ghedira, Bruno Allard, Hervé Morel, Denise Renault. Choosing a thermal model for electrothermal simulation of power semiconductor devices. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1999, 14 (2), pp.300-307. ⟨hal-00140099⟩
  • Jean-Pierre Chante, Bruno Allard, Dominique Bergogne, Francis Calmo, René Elhinger, et al.. Les composants de puissance : état de l'art, les évolutions. Revue Internationale de Génie Electrique, RIGE, 1998. ⟨hal-02117240⟩
  • Anis Ammous, Bruno Allard, Hervé Morel. Transient temperature measurements and modeling of IGBT's under short circuit. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1998, 13 (1), pp.12-25. ⟨hal-00140100⟩
  • H. Fraisse, Jean-Pierre Masson, F. Marthouret, Hervé Morel. MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION. IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 1995, 31 (6), pp.4068-4070. ⟨hal-00140102⟩
  • Hervé Morel, S. Gamal, Jean-Pierre Chante. STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1994, 9 (1), pp.112-120. ⟨hal-00140103⟩

Conference papers93 documents

  • Joao Oliveira, Ali Alhoussen, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Behavior and Comparison of Wide Bandgap Devices for Automotive Applications. EPE 2021 ECCE Europe, Sep 2021, Ghent, Belgium. ⟨hal-03260519⟩
  • Joao Oliveira, Hervé Morel, Dominique Planson, Florent Loiselay. Analysis of Parasitic Elements in Power Modules Based on GaN Components. PCIM Europe 2020, Jul 2020, Nuremberg, Germany. ⟨hal-02945892⟩
  • Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215793⟩. ⟨hal-02945913⟩
  • Besar Asllani, Hervé Morel, Pascal Bevilacqua, Dominique Planson. Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor. EPE’20 ECCE Europe, Sep 2020, Lyon, France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215769⟩. ⟨hal-02945919⟩
  • Thilini Wickramasinghe, Bruno Allard, Cyril Buttay, Charles Joubert, Christian Martin, et al.. A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices. 45th IEEE IECON, Oct 2019, Lisbonne, Portugal. ⟨hal-02405883⟩
  • Thilini Wickramasinghe, Cyril Buttay, Christian Martin, Hervé Morel, Pascal Bevilacqua, et al.. An investigation of current distribution over four GaN HEMTs in parallel configurations. The 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2019), Oct 2019, Raleigh, United States. ⟨hal-02405882⟩
  • Ilyas Dchar, Cyril Buttay, Hervé Morel. Packaging Solution for SiC Power Modules with a Fail-to-Short Capability. APEC, Mar 2019, Anaheim, Californie, United States. ⟨hal-02076181⟩
  • Cyril Buttay, Christian Martin, Charles Joubert, Hervé Morel, Bruno Allard, et al.. Benefits of GaN transistors and embedding in PCB laminates. SIA Power Train & Electronics, Jun 2019, Paris, France. ⟨hal-02291496⟩
  • Besar Asllani, Dominique Planson, Hervé Morel, T Lagier. Static characteristics of 5 kV SiC BJTs and Darlington’s. International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019, Sep 2019, Kyoto, Japan. ⟨hal-02428513⟩
  • Besar Asllani, Alberto Castellazzi, Oriol Salvado, Asad Fayyaz, Hervé Morel, et al.. V TH -Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate. IRPS, Mar 2019, Monterey, CA, United States. ⟨hal-02099781⟩
  • Besar Asllani, Hervé Morel, Dominique Planson, Asad Fayyaz, Alberto Castellazzi. SiC power MOSFETs Threshold-voltage hysteresis and its impact on Short Circuit operation. ESARS-ITEC, IEEE, Nov 2018, Nottingham, United Kingdom. ⟨10.1109/ESARS-ITEC.2018.8607547⟩. ⟨hal-01984359⟩
  • Quentin Molin, Christophe Raynaud, Mehdi Kanoun, Hervé Morel. Repetitive short-circuit measurement on SiC MOSFET. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. ⟨hal-01980834⟩
  • Besar Asllani, Pascal Bevilacqua, A. Zaoui, G Grosset, Dominique Planson, et al.. High-Voltage SiC-JFET Fabrication and Full Characterization. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.P_BP5. ⟨hal-02428523⟩
  • Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel. Robustness study of 1700 V 45 mΩ SiC MOSFETs. 2018 IEEE ICIT, Feb 2018, Lyon, France. ⟨10.1109/ICIT.2018.8352285⟩. ⟨hal-01942728⟩
  • Besar Asllani, A Castellazzi, Dominique Planson, Hervé Morel. Subthreshold Drain current hysteresis of planar SiC MOSFETs. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.TU.O4a.04. ⟨hal-02428531⟩
  • Besar Asllani, Dominique Planson, Pascal Bevilacqua, J Fonder, B Choucoutou, et al.. Advanced Electrical characterisation of high voltage 4H-SiC PiN diodes. ECSCRM'18, Sep 2018, Birmingham, United Kingdom. pp.WE.P.RD2. ⟨hal-01985994⟩
  • Hervé Morel, Loïc Michel, Guy Clerc, Pascal Bevilacqua, Mohamed Barara, et al.. Microréseaux DC : avantages des réseaux maillés. Symposium de Génie Electrique (SGE'18), Université de Lorraine [UL], Jul 2018, Nancy, France. ⟨hal-02134229⟩
  • Ousseynou Yade, Christian Martin, Christian Vollaire, Arnaud Bréard, Marwan Ali, et al.. Improved Layout of Inverter for EMC Analysis. More Electrical Aircraft (MEA), Feb 2017, Bordeaux, France. ⟨hal-01715021⟩
  • Hugo Reynes, Cyril Buttay, Hervé Morel. Protruding Ceramic Substrates for High Voltage Packaging Of Wide Bandgap Semiconductors. WiPDA, Oct 2017, Albuquerque, United States. ⟨10.1109/WiPDA.2017.8170581⟩. ⟨hal-01645029⟩
  • Ilyas Dchar, Marion Zolkos, Cyril Buttay, Hervé Morel. Robustness of SiC MOSFET under avalanche conditions. APEC, Mar 2017, Tampa, FL, United States. pp.2263-2268, ⟨10.1109/APEC.2017.7931015⟩. ⟨hal-01535735⟩
  • Mohamed Barara, Hervé Morel, Guy Clerc. Control Strategy Scheme for Consistent Power Flow Control in Meshed DC Micro-grids . International conference on components and systems for DC grids, Mar 2017, Grenoble, France. ⟨hal-01793569⟩
  • Oriol Aviño Salvado, Wissam Sabbah, Cyril Buttay, Hervé Morel, Pascal Bevilacqua. Evaluation of printed-circuit boards materials for high temperature operation. HiTEN, IMAPS, Jul 2017, Cambridge, United Kingdom. ⟨hal-01565131⟩
  • Thi Thuong Huyen Ma, Hamed Yahoui, Fedia Baccar El Boubkari, Hervé Morel, Hoang-Giang Vu, et al.. Building a Matlab/Simulink Model of a SiC-JFET for the investigation of Solid State DC Breaker. COSYS-DC, Mar 2017, Grenoble, France. pp.Electronique. ⟨hal-01639199⟩
  • Oriol Aviño Salvado, Hervé Morel, Cyril Buttay. Étude de la robustesse de l’oxyde de grille pour des applications aéronautiques. JCGE, May 2017, Arras, France. pp.146345. ⟨hal-01534712⟩
  • Malorie Hologne, Pascal Bevilacqua, Bruno Allard, Guy Clerc, Hervé Morel, et al.. An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module. IEMDC, May 2017, Miami, FL, United States. pp.MO263, ⟨10.1109/IEMDC.2017.8002028⟩. ⟨hal-01532058⟩
  • Layal Ghossein, Florent Morel, Hervé Morel, Piotr Dworakowski. State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications. PCIM Europe 2016, May 2016, Nuremberg, Germany. pp.CD. ⟨hal-01316570⟩
  • Oriol Aviño Salvado, Cheng Chen, Cyril Buttay, Hervé Morel, Denis Labrousse, et al.. Analyse de la robustesse des MOSFET SiC pour les applications diode-less. Symposium de Génie Electrique (SGE'16), Jun 2016, Grenoble, France. ⟨hal-01361711⟩
  • T. Nguyen-Bui, Mihai Lazar, Jean-Louis Augé, Hervé Morel, L. Phung, et al.. Vertical termination filled with adequate dielectric for SiC devices in HVDC applications. International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Oct 2015, Giardini Naxos, Italy. ⟨hal-02138529⟩
  • Bruno Allard, Cyril Buttay, Christian Martin, Hervé Morel. Considerations for High Temperature Power Electronics. 18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia. ⟨hal-01372146⟩
  • Cyril Buttay, Marwan Ali, Oriol Aviño Salvado, Hervé Morel, Bruno Allard. High temperature operation of SiC transistors. Advanced Technology Workshop (ATW) on Thermal Management, IMAPS, Sep 2015, Los Gatos, CA, United States. ⟨hal-01373030⟩
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Gabriel Ferro, Selsabil Sejil, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. pp.145 - 148, ⟨10.1109/SMICND.2015.7355190⟩. ⟨hal-01388019⟩
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, et al.. Robustness of SiC MOSFETs in short-circuit mode. PCIM Europe 2015, May 2015, Nuremberg, Germany. ⟨hal-01196528⟩
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, et al.. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. ESREF, Oct 2015, Toulouse, France. pp.1708-1713. ⟨hal-01700463⟩
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. 4H-SiC P-N junctions realized by VLS for JFET lateral structures. ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61. ⟨hal-02133686⟩
  • Marc Petit, Seddik Bacha, Xavier Guillaud, Hervé Morel, Dominique Planson, et al.. Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065154⟩
  • Chen Cheng, Denis Labrousse, Stéphane Lefebvre, Hervé Morel, Cyril Buttay, et al.. Power Loss Estimation in SiC Power BJTs. PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p. ⟨hal-00997718⟩
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Cyril Buttay, Hervé Morel. Estimation des pertes dans les transistors bipolaires SiC. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065220⟩
  • Rémy Ouaida, Xavier Fonteneau, Fabien Dubois, Dominique Bergogne, Florent Morel, et al.. SiC Vertical JFET Pure Diode-Less Inverter Leg. APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, ⟨10.1109/APEC.2013.6520258⟩. ⟨hal-00829343⟩
  • Xavier Fonteneau, Florent Morel, Cyril Buttay, Hervé Morel, Philippe Lahaye. Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes. APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, ⟨10.1109/APEC.2013.6520668⟩. ⟨hal-00829353⟩
  • Fabien Dubois, Dominique Bergogne, Dominique Tournier, Cyril Buttay, Régis Meuret, et al.. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature. EPE, Sep 2013, Lille, France. Paper 344, ⟨10.1109/EPE.2013.6631963⟩. ⟨hal-00874655⟩
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. CSCRM, Sep 2012, Saint-Pétersbourg, Russia. 2p. ⟨hal-00759975v2⟩
  • Bassem Mouawad, Cyril Buttay, Maher Soueidan, Hervé Morel, Bruno Allard, et al.. 3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules. 7th CIPS, Mar 2012, Nuremberg, Germany. pp.433-438. ⟨hal-00707741⟩
  • Fabien Dubois, Stéphane Sorel, Sonia Dhokkar, Régis Meuret, Dominique Bergogne, et al.. A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs. ECCE, Sep 2012, Raleigh, United States. pp.3581, ⟨10.1109/ECCE.2012.6342486⟩. ⟨hal-00739021⟩
  • Dominique Bergogne, Fabien Dubois, Christian Martin, Khalil El Falahi, Luong Viet Phung, et al.. An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators. HiTEC 2012, May 2012, Albuquerque, United States. 6p. ⟨hal-00760366⟩
  • Xavier Fonteneau, Florent Morel, Hervé Morel, Philippe Lahaye, Eliana Rondon. Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode. ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩. ⟨hal-00739006⟩
  • Xavier Fonteneau, Florent Morel, Hervé Morel, Philippe Lahaye, Didier Léonard. Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC. 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 24). ⟨hal-00729345⟩
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Report de puce par frittage d'argent - mise en oeuvre et analyse. 14ème EPF, Jul 2012, Bordeaux, France. pp.CD (ref 61). ⟨hal-00729156⟩
  • Christian Martin, Rémi Robutel, Cyril Buttay, Fabien Sixdenier, Pascal Bevilacqua, et al.. High Temperature Ageing of Fe-based Nanocrystalline Ribbons. HiTEC 2012, May 2012, Albuquerque, United States. 6p. ⟨hal-00760373⟩
  • Mahbouba Amairi, Sameh Mtimet, Tarek Ben Salah, Hervé Morel. Temperature dependence of silicon and silicon carbide power devices: An experimental analysis. MELECON 2012, Mar 2012, Tunis, Tunisia. pp.97 - 101, ⟨10.1109/MELCON.2012.6196389⟩. ⟨hal-00747425⟩
  • Bassem Mouawad, Cyril Buttay, Maher Soueidan, Hervé Morel, Vincent Bley, et al.. Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications. ISPSD, Jun 2012, Bruges, Belgium. pp.295-298, ⟨10.1109/ISPSD.2012.6229081⟩. ⟨hal-00707820⟩
  • Bruno Allard, Cyril Buttay, Dominique Tournier, Rémi Robutel, Jean-François Mogniotte, et al.. Higher temperature power electronics for larger-scale mechatronic integration. Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination). ⟨hal-00687139⟩
  • Cyril Buttay, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, et al.. Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization. HiTEN 2011, Jul 2011, Oxford, United Kingdom. pp.1-7. ⟨hal-00672619⟩
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beyrouth, Lebanon. pp.CD. ⟨hal-00661500⟩
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Mihai Lazar, Gabriel Civrac, et al.. High-temperature behavior of SiC power diodes. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629225⟩
  • Amandine Masson, Cyril Buttay, Hervé Morel, Christophe Raynaud, Stanislas Hascoët, et al.. High-temperature die-attaches for SiC power devices. EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161. ⟨hal-00672602⟩
  • Rémi Robutel, Christian Martin, Hervé Morel, Paulo Mattavelli, Dushan Boroyevitch, et al.. Integrated common mode capacitors for SiC JFET inverters. APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, ⟨10.1109/APEC.2011.5744597⟩. ⟨hal-00618665⟩
  • Fabien Dubois, Dominique Bergogne, Damien Risaletto, Rémi Perrin, Abderrahime Zaoui, et al.. Ultrafast safety system to turn-off normally on SiC JFETs. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629232⟩
  • Fabien Dubois, Damien Risaletto, Dominique Bergogne, Hervé Morel, Cyril Buttay, et al.. Active protections for normally-on SiC JFETs. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629227⟩
  • Hervé Morel, Youness Hamieh, Dominique Tournier, Rémi Robutel, Fabien Dubois, et al.. A multi-physics model of the VJFET with a lateral channel. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD. ⟨hal-00629220⟩
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal Requirements of SiC Power Devices. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France. ⟨hal-00672631⟩
  • Rémi Robutel, Christian Martin, Hervé Morel, Cyril Buttay, Dominique Bergogne, et al.. Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter. HiTEC 2010, May 2010, Albuquerque, United States. pp.000236. ⟨hal-00485284⟩
  • Fabien Dubois, Dominique Bergogne, Damien Risaletto, Rémi Robutel, Hervé Morel, et al.. High Temperature Inverter for Airborne Application. HiTEC 2010, May 2010, Albuquerque, United States. pp.000222. ⟨hal-00485279⟩
  • Dominique Bergogne, Damien Risaletto, Fabien Dubois, Asif Hammoud, Hervé Morel, et al.. Normally-On SiC JFETs in power converters: Gate driver and safe operation. 6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD. ⟨hal-00629214⟩
  • Dominique Bergogne, Olivier Berry, Sonia Dhokkar, Youness Hamieh, Farid Meibody-Tabar, et al.. Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON). 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618715⟩
  • Régis Meuret, Olivier Berry, Fabien Dubois, Youness Hamieh, Stéphane Raël, et al.. SIC inverter optimization for high temperature applications. 27th International Congress of the Aeronautical Sciences, Sep 2010, Nice, France. ⟨hal-02937166⟩
  • Rémi Robutel, Christian Martin, Cyril Buttay, Hervé Morel, Régis Meuret. Caractérisation des non-linéarités dans les condensateurs céramiques haute température. 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618657⟩
  • Damien Risaletto, Dominique Bergogne, Fabien Dubois, Hervé Morel, Cédric Ruby, et al.. Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance. 13ème EPF, Jun 2010, Saint-Nazaire, France. ⟨hal-00618693⟩
  • Dominique Bergogne, Asif Hammoud, Dominique Tournier, Cyril Buttay, Youness Amieh, et al.. Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages. EPE, Sep 2009, Barcelone, France. pp.1--8. ⟨hal-00446059⟩
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17. ⟨hal-00413349⟩
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2. ⟨hal-00372982⟩
  • Rami Mousa, Dominique Planson, Hervé Morel, Bruno Allard, Christophe Raynaud. Modeling and high temperature characterization of SiC-JFET. IEEE PESC, Jun 2008, Rhodes, Greece. pp.3111 - 3117, ⟨10.1109/PESC.2008.4592430⟩. ⟨hal-00369420⟩
  • Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Hassan Jawad, Pascal Bevilacqua, et al.. Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique. CSCRM, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩. ⟨hal-00391369⟩
  • Dominique Bergogne, Herve Morel, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, et al.. Towards an Airborne High Temperature SiC Inverter. 2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, Rhodes, France. pp.3178-3183, ⟨10.1109/PESC.2008.4592442⟩. ⟨hal-00467659⟩
  • Dominique Tournier, Dominique Bergogne, Asif Hamoud, Dominique Planson, Rami Mousa, et al.. Current limiting with SiC JFET structures. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.5. ⟨hal-00373046⟩
  • Dominique Bergogne, Dominique Tournier, Rami Mousa, Mohsen Shafiee Khoor, Dominique Planson, et al.. SiC JFET for high temperature power switches. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.4. ⟨hal-00373058⟩
  • Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, et al.. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications. CSCRM, Sep 2008, Barcelone, Spain. pp.911-914, ⟨10.4028/www.scientific.net/MSF.615-617.911⟩. ⟨hal-00391376⟩
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. 13th IEEE PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, ⟨10.1109/EPEPEMC.2008.4635632⟩. ⟨hal-00373016⟩
  • Hervé Morel, Dominique Bergogne, Dominique Planson, Bruno Allard, Régis Meuret. New Applications in Power Electronics Based on SiC Power Devices. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.925-930, ⟨10.4028/www.scientific.net/MSF.600-603.925⟩. ⟨hal-02958610⟩
  • Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Sami Ghedira, et al.. Electrical characterization of 5kV SiC bipolar diodes in switching transient regime. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, ⟨10.1109/EPE.2007.4417681⟩. ⟨hal-00369457⟩
  • Rami Mousa, Dominique Planson, Hervé Morel, Christophe Raynaud. High temperature characterization of SiC-JFET and modelling. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417501⟩. ⟨hal-00369458⟩
  • Their Ibrahim, Bruno Allard, Hervé Morel, Sabrine M'Rad. VHDL-AMS model of IGBT for electro-thermal simulation. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, ⟨10.1109/EPE.2007.4417461⟩. ⟨hal-00369426⟩
  • Tarek Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5 kV SiC bipolar devices by switching transient studies. ICSCRM'2007, Oct 2007, Otsu, Japan. pp.1031-1034, ⟨10.4028/www.scientific.net/MSF.600-603.1031⟩. ⟨hal-02958620⟩
  • Christian Martin, Hervé Morel, Dominique Bergogne, Bruno Allard. Les enjeux de la haute température. 11ème EPF, Jul 2006, Grenoble, France. ⟨hal-00412423⟩
  • Sabrine M'Rad, Bruno Allard, Anis Ammous, Nouri Massmoudi, Hervé Morel. Analytic thermal modelling of power electronic components: The Diffusive Representation. 4th CIPS, Jun 2006, Naples, Italy. on CD (6 p.). ⟨hal-00413392⟩
  • Dominique Bergogne, Pascal Bevilacqua, Dominique Planson, Hervé Morel. High temperature operating converter. 4th CIPS, Jun 2006, Naples, Italy. pp.201-204. ⟨hal-00413394⟩
  • Hervé Morel, Bruno Allard, Sabrine M'Rad, Cyril Buttay, Kaiçar Ammous, et al.. Bond Graph Modeling of Current Diffusion in Magnetic Cores. ICBGM, Jan 2005, New Orleans, LA, United States. pp 87-91. ⟨hal-00412621⟩
  • Pierre Lefranc, Dominique Bergogne, Hervé Morel, Bruno Allard, Jean-François Roche. Fast over-current protection of high power IGBT modules. EPE, Sep 2005, Dresden, Germany. ⟨hal-00413400⟩
  • Cyril Buttay, Olivier Brevet, Bruno Allard, Dominique Bergogne, Hervé Morel. Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions. EPE, Sep 2005, Dresden, Germany. ⟨10.1109/EPE.2005.219271⟩. ⟨hal-00138894⟩
  • Dominique Bergogne, Pascal Bevilacqua, Sabrine M'Rad, Dominique Planson, Hervé Morel, et al.. 300 °C operating junction temperature inverter leg investigations. EPE, Sep 2005, Dresden, Germany. ⟨hal-00413402⟩
  • Hassan Helali, Dominique Bergogne, Hervé Morel, Bruno Allard, Pascal Bevilacqua. Power converter's optimisation, analysis and design. EPE, Sep 2005, Dresden, Germany. ⟨hal-00413401⟩
  • François Pêcheux, Bruno Allard, Christophe Lallement, Alain Vachoux, Hervé Morel. Modeling and simulation of multi-discipline systems using bond graphs and VHDL-AMS. ICBGM 2005 - International Conference on Bond Graph Modeling and Simulation, Jan 2005, New Orleans, LA, United States. pp.149-155. ⟨hal-01486590⟩
  • Cyril Buttay, Dominique Bergogne, Hervé Morel, Bruno Allard, René Ehlinger, et al.. A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge. EPE, Sep 2003, Toulouse, France. pp.1-10. ⟨hal-00413309⟩
  • Cyril Buttay, Dominique Bergogne, Hervé Morel, Bruno Allard, René Ehlinger, et al.. Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge. IEEE PESC, Jun 2003, Accapulco, Mexico. pp.901 - 906, ⟨10.1109/PESC.2003.1218175⟩. ⟨hal-00413325⟩

Book sections1 document

  • Mohamed Barara, Hervé Morel, Guy Clerc, Mustapha Jamma, Pascal Bevilacqua, et al.. Control Strategy and Impact of Meshed DC Micro-grid in the Middle East. Climate Change and Energy Dynamics in the Middle East - Modeling and Simulation-Based Solutions, pp.109-129, 2019, ⟨10.1007/978-3-030-11202-8_5⟩. ⟨hal-02088323⟩

Other publications1 document

  • Hassan Helali, Hervé Morel, Dominique Bergogne, Jean-Luc Schanen, Jean-Michel Guichon. Méthode de calcul de spectres CEM à base de graphes de liens. Application au hacheur série. 2006. ⟨hal-00200802⟩

Reports1 document

  • Hervé Morel. Diagnostic de défauts du rotor de l'hélicoptère : supervision de cartes auto-organisatrices avec critère de convergence géométrique. [Rapport de recherche] LSIS. 2006. ⟨hal-01488845⟩

Habilitation à diriger des recherches1 document

  • Hervé Morel. Modélisation et simulation des composants et des systèmes électroniques de puissance. Energie électrique. INSA de Lyon, 1994. ⟨tel-00731059⟩