Nombre de documents

126

CV de Hervé Morel


Communication dans un congrès62 documents

  • Layal Ghossein, Florent Morel, Hervé Morel, Piotr Dworakowski. State of the Art of Gate-Drive Power Supplies for Medium and High Voltage Applications. Power conversion and Intelligent Motion, May 2016, Nuremberg, Germany. Proc. of PCIM Europe 2016, pp.CD. <hal-01316570>
  • Oriol Aviño Salvado, Cheng Chen, Cyril Buttay, Hervé Morel, Denis Labrousse, et al.. Analyse de la robustesse des MOSFET SiC pour les applications diode-less. Symposium de Genie Electrique, Jun 2016, Grenoble, France. <hal-01361711>
  • Mihai Lazar, Davy Carole, Christophe Raynaud, Selsabil Sejil, Farah Laariedh, et al.. Classic and alternative methods of p-type doping 4H-SiC for integrated lateral devices. CAS, Oct 2015, Sinaia, Romania. Proc. of International Semiconductor Conference, pp.145 - 148, 2015, <http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6966365>. <10.1109/SMICND.2015.7355190 >. <hal-01388019>
  • Cheng Chen, Denis Labrousse, Stephane Lefebvre, Mickaël Petit, Cyril Buttay, et al.. Robustness of SiC MOSFETs in short-circuit mode. International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2015), May 2015, Nuremberg, Germany. 2015, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. <hal-01196528>
  • Bruno Allard, Cyril Buttay, Christian Martin, Hervé Morel. Considerations for High Temperature Power Electronics. 18th International Symposium on Power Electronics Ee2015, Oct 2015, Novi Sad, Serbia. <hal-01372146>
  • Cyril Buttay, Marwan Ali, Oriol Aviño Salvado, Hervé Morel, Bruno Allard. High temperature operation of SiC transistors. Advanced Technology Workshop (ATW) on Thermal Management, Sep 2015, Los Gatos, CA, United States. 2015, <http://www.imaps.org/thermal/>. <hal-01373030>
  • Marc Petit, Seddik Bacha, Xavier Guillaud, Hervé Morel, Dominique Planson, et al.. Les réseaux HVDC multi-terminaux : des défis multiples en génie électrique. Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. <hal-01065154>
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Cyril Buttay, Hervé Morel. Estimation des pertes dans les transistors bipolaires SiC. Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. <hal-01065220>
  • Chen Cheng, Denis Labrousse, Stéphane Lefebvre, Hervé Morel, Cyril Buttay, et al.. Power Loss Estimation in SiC Power BJTs. Power Control Intelligent Motion 2014 (PCIM 2014), May 2014, Nuremberg, Germany. 8 p., 2014. <hal-00997718>
  • Fabien Dubois, Dominique Bergogne, Dominique Tournier, Cyril Buttay, Régis Meuret, et al.. Analysis of the SiC VJFET gate punch-through and its dependence with the temperature. EPE'13-ECCE Europe, Sep 2013, Lille, France. Paper 344, 2013. <hal-00874655>
  • Rémy Ouaida, Xavier Fonteneau, Fabien Dubois, Dominique Bergogne, Florent Morel, et al.. SiC Vertical JFET Pure Diode-Less Inverter Leg. APEC, Mar 2013, Long Beach, CA, United States. pp.512-517, 2013. <hal-00829343>
  • Xavier Fonteneau, Florent Morel, Cyril Buttay, Hervé Morel, Philippe Lahaye. Predicting Static Losses in an Inverter-Leg built with SiC Normally-Off JFETs and SiC diodes. APEC, Mar 2013, Long Beach, CA, United States. pp.2636-2642, 2013. <hal-00829353>
  • Bassem Mouawad, Cyril Buttay, Maher Soueidan, Hervé Morel, Vincent Bley, et al.. Sintered molybdenum for a metallized ceramic substrate packaging for the wide-bandgap devices and high temperature applications. International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2012, Brugges, Belgium. pp.295-298, 2012. <hal-00707820>
  • Bassem Mouawad, Cyril Buttay, Maher Soueidan, Hervé Morel, Bruno Allard, et al.. 3-Dimensional, Solder-Free Interconnect Technology for high-Performance Power Modules. Conference on Integrated Power Systems (CIPS), Mar 2012, Nuremberg, Germany. VDE Verlag, pp.433-438, 2012. <hal-00707741>
  • Xavier Fonteneau, Florent Morel, Hervé Morel, Philippe Lahaye, Eliana Rondon. Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode. ECCE, Sep 2012, Raleigh, United States. pp.1503, 2012. <hal-00739006>
  • Fabien Dubois, Stéphane Sorel, Sonia Dhokkar, Régis Meuret, Dominique Bergogne, et al.. A High Temperature Ultrafast Isolated Converter to Turn-Off Normally-On SiC JFETs. ECCE, Sep 2012, Raleigh, United States. pp.3581, 2012. <hal-00739021>
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. ECSCRM, Sep 2012, St Petersburg, Russia. 2p, 2012. <hal-00759975v2>
  • Mahbouba Amairi, Sameh Mtimet, Tarek Ben Salah, Hervé Morel. Temperature dependence of silicon and silicon carbide power devices: An experimental analysis. MELECON, Mar 2012, Tunis, Tunisia. pp.97 - 101, 2012, <10.1109/MELCON.2012.6196389>. <hal-00747425>
  • Christian Martin, Rémi Robutel, Cyril Buttay, Fabien Sixdenier, Pascal Bevilacqua, et al.. High Temperature Ageing of Fe-based Nanocrystalline Ribbons. IMAPS. HiTEC, May 2012, Albuquerque, United States. 6p, 2012. <hal-00760373>
  • Dominique Bergogne, Fabien Dubois, Christian Martin, Khalil El Falahi, Luong Viet Phung, et al.. An Airborne High Temperature SiC Power Converter for Medium Power Smart Electro Mechanical Actuators. IMAPS. HiTEC, May 2012, Albuquerque, United States. 6p, 2012. <hal-00760366>
  • Xavier Fonteneau, Florent Morel, Hervé Morel, Philippe Lahaye, Didier Léonard. Prévision des pertes par conduction dans un onduleur à JFET Normally-Off et diodes SiC. EPF'2012, Jul 2012, Bordeaux, France. pp.CD (ref 24), 2012. <hal-00729345>
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Report de puce par frittage d'argent - mise en oeuvre et analyse. EPF'2012, Jul 2012, Bordeaux, France. pp.CD (ref 61), 2012. <hal-00729156>
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. CIMA, Mar 2011, Beirut, Lebanon. Advances in Innovative Materials and Applications, pp.CD, 2011. <hal-00661500>
  • Bruno Allard, Cyril Buttay, Dominique Tournier, Rémi Robutel, Jean-François Mogniotte, et al.. Higher temperature power electronics for larger-scale mechatronic integration. Automotive Power Electronics, Apr 2011, Paris, France. Actes sur CD (pas de pagination), 2011. <hal-00687139>
  • Cyril Buttay, Amandine Masson, Jianfeng Li, Mark Johnson, Mihai Lazar, et al.. Die Attach of Power Devices Using Silver Sintering - Bonding Process Optimization and Characterization. IMAPS. High Temperature Electronics Network (HiTEN), Jul 2011, Oxford, United Kingdom. pp.1-7, 2011. <hal-00672619>
  • Amandine Masson, Cyril Buttay, Hervé Morel, Christophe Raynaud, Stanislas Hascoët, et al.. High-temperature die-attaches for SiC power devices. EPE, Aug 2011, Birmingham, United Kingdom. pp.Article number 6020161, 2011. <hal-00672602>
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal Requirements of SiC Power Devices. 6th European Advanced Technology Workshop on Micropackaging and Thermal Management, Feb 2011, La Rochelle, France. <hal-00672631>
  • Fabien Dubois, Dominique Bergogne, Damien Risaletto, Rémi Perrin, Abderrahime Zaoui, et al.. Ultrafast safety system to turn-off normally on SiC JFETs. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD, 2011. <hal-00629232>
  • Hervé Morel, Youness Hamieh, Dominique Tournier, Rémi Robutel, Fabien Dubois, et al.. A multi-physics model of the VJFET with a lateral channel. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD, 2011. <hal-00629220>
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Mihai Lazar, Gabriel Civrac, et al.. High-temperature behavior of SiC power diodes. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD, 2011. <hal-00629225>
  • Fabien Dubois, Damien Risaletto, Dominique Bergogne, Hervé Morel, Cyril Buttay, et al.. Active protections for normally-on SiC JFETs. EPE, Aug 2011, Birmingham, United Kingdom. pp.CD, 2011. <hal-00629227>
  • Rémi Robutel, Christian Martin, Hervé Morel, Paulo Mattavelli, Dushan Boroyevitch, et al.. Integrated common mode capacitors for SiC JFET inverters. APEC, Mar 2011, Fort Worth, TX, United States. pp.196 - 202, 2011, <10.1109/APEC.2011.5744597>. <hal-00618665>
  • Dominique Bergogne, Damien Risaletto, Fabien Dubois, Asif Hammoud, Hervé Morel, et al.. Normally-On SiC JFETs in power converters: Gate driver and safe operation. CIPS, Mar 2010, Nuremberg, Germany. pp.CD, 2010. <hal-00629214>
  • Fabien Dubois, Dominique Bergogne, Damien Risaletto, Rémi Robutel, Hervé Morel, et al.. High Temperature Inverter for Airborne Application. HiTEC 2010, May 2010, Albuquerque, United States. pp.000222, 2010. <hal-00485279>
  • Rémi Robutel, Christian Martin, Hervé Morel, Cyril Buttay, Dominique Bergogne, et al.. Design of High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter. HiTEC 2010, May 2010, Albuquerque, United States. pp.000236, 2010. <hal-00485284>
  • Dominique Bergogne, Olivier Berry, Sonia Dhokkar, Youness Hamieh, Farid Meibody-Tabar, et al.. Modélisation multiphysique d un canal JFET asymétrique - applications aux JFET SiC (INFINEON). Électronique de Puissance du Futur, 13ème édition (EPF 2010), Jun 2010, Saint-Nazaire, France. <hal-00618715>
  • Rémi Robutel, Christian Martin, Cyril Buttay, Hervé Morel, Régis Meuret. Caractérisation des non-linéarités dans les condensateurs céramiques haute température. Électronique de Puissance du Futur, 13ème édition (EPF 2010), Jun 2010, Saint-Nazaire, France. <hal-00618657>
  • Damien Risaletto, Dominique Bergogne, Fabien Dubois, Hervé Morel, Cédric Ruby, et al.. Système d'autoprotection de JFET en SiC pour les convertisseurs de puissance. Électronique de Puissance du Futur, 13ème édition (EPF 2010), Jun 2010, Saint-Nazaire, France. <hal-00618693>
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of High Temperature Power Electronics. Microtherm, Jun 2009, Lodz, Poland. pp.8-17, 2009. <hal-00413349>
  • Dominique Bergogne, Asif Hammoud, Dominique Tournier, Cyril Buttay, Youness Amieh, et al.. Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages. EPE '09, Sep 2009, Barcelona, France. pp.1--8, 2009. <hal-00446059>
  • Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Hassan Jawad, Pascal Bevilacqua, et al.. Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique. ECSCRM, Sep 2008, Barcelona, Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.703-706, 2009, <10.4028/www.scientific.net/MSF.615-617.703>. <hal-00391369>
  • Dominique Bergogne, Herve Morel, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, et al.. Towards an Airborne High Temperature SiC Inverter. 2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, Jun 2008, France. pp.3178-3183, 2008, <10.1109/PESC.2008.4592442>. <hal-00467659>
  • Dominique Tournier, Pascal Bevilacqua, Dominique Planson, Hervé Morel, Pierre Brosselard, et al.. High Power Density SiC 450A AccuMOSFET for Current Limiting Applications. ECSCRM, Sep 2008, Barcelona, Spain. TRANS TECH PUBLICATIONS LTD, LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND, 615-617, pp.911-914, 2009, <10.4028/www.scientific.net/MSF.615-617.911>. <hal-00391376>
  • Dominique Bergogne, Hervé Morel, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, et al.. Towards an airborne high temperature SiC inverter. PESC 2008, Jun 2008, Rhodes, Greece. pp.3178 - 3183, 2008, <10.1109/PESC.2008.4592442>. <hal-00369413>
  • Rami Mousa, Dominique Planson, Hervé Morel, Bruno Allard, Christophe Raynaud. Modeling and high temperature characterization of SiC-JFET. PESC 2008, Jun 2008, Rhodes, Greece. pp.3111 - 3117, 2008, <10.1109/PESC.2008.4592430>. <hal-00369420>
  • Dominique Tournier, Dominique Bergogne, Asif Hamoud, Dominique Planson, Rami Mousa, et al.. Current limiting with SiC JFET structures. CIPS, Mar 2008, Nuremberg, Germany. pp.08.5, 2008. <hal-00373046>
  • Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. CIPS, Mar 2008, Nuremberg, Germany. pp.08.2, 2008. <hal-00372982>
  • Dominique Bergogne, Dominique Tournier, Rami Mousa, Mohsen Shafiee Khoor, Dominique Planson, et al.. SiC JFET for high temperature power switches. CIPS, Mar 2008, Nuremberg, Germany. pp.08.4, 2008. <hal-00373058>
  • Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Hervé Morel, et al.. SiC Power Semiconductor Devices for new Applications in Power Electronics. IEEE/EPE-PEMC, Sep 2008, Poznan, Poland. pp.2457 - 2463, 2008, <10.1109/EPEPEMC.2008.4635632>. <hal-00373016>
  • Their Ibrahim, Bruno Allard, Hervé Morel, Sabrine M'Rad. VHDL-AMS model of IGBT for electro-thermal simulation. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, 2008, <10.1109/EPE.2007.4417461>. <hal-00369426>
  • Rami Mousa, Dominique Planson, Hervé Morel, Christophe Raynaud. High temperature characterization of SiC-JFET and modelling. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 10, 2008, <10.1109/EPE.2007.4417501>. <hal-00369458>
  • Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Sami Ghedira, et al.. Electrical characterization of 5kV SiC bipolar diodes in switching transient regime. ECPEA 2007, Sep 2007, Aalborg, Denmark. pp.1 - 8, 2008, <10.1109/EPE.2007.4417681>. <hal-00369457>
  • Christian Martin, Hervé Morel, Dominique Bergogne, Bruno Allard. Les enjeux de la haute température. EPF 2006 : Électronique de Puissance du Futur, 11ème édition., Jul 2006, Grenoble, France. <hal-00412423>
  • Dominique Bergogne, Pascal Bevilacqua, Dominique Planson, Hervé Morel. High temperature operating converter. CIPS, Jun 2006, Naples, Italy. on CD (6 p.), 2006. <hal-00413394>
  • Sabrine M'Rad, Bruno Allard, Anis Ammous, Nouri Massmoudi, Hervé Morel. Analytic thermal modelling of power electronic components: The Diffusive Representation. CIPS, Jun 2006, Naples, Italy. on CD (6 p.), 2006. <hal-00413392>
  • Hervé Morel, Bruno Allard, Sabrine M'Rad, Cyril Buttay, Kaiçar Ammous, et al.. Bond Graph Modeling of Current Diffusion in Magnetic Cores. 2005 International Conference on Bond Graph Modeling and Simulation (ICBGM 05), Jan 2005, New Orleans, United States. SCS publishing, 37 (1), pp 87-91, 2005. <hal-00412621>
  • Dominique Bergogne, Pascal Bevilacqua, Sabrine M'Rad, Dominique Planson, Hervé Morel, et al.. 300 °C operating junction temperature inverter leg investigations. EPE 2005 - 11th European Conference on Power Electronics and Applications, Sep 2005, Dresden, Germany. <hal-00413402>
  • Pierre Lefranc, Dominique Bergogne, Hervé Morel, Bruno Allard, Jean-François Roche. Fast over-current protection of high power IGBT modules. EPE 2005 - 11th European Conference on Power Electronics and Applications, Sep 2005, Dresden, Germany. <hal-00413400>
  • Hassan Helali, Dominique Bergogne, Hervé Morel, Bruno Allard, Pascal Bevilacqua. Power converter's optimisation, analysis and design. EPE 2005 - 11th European Conference on Power Electronics and Applications, Sep 2005, Dresden, Germany. <hal-00413401>
  • Cyril Buttay, Olivier Brevet, Bruno Allard, Dominique Bergogne, Hervé Morel. Paralleling of Low-Voltage MOSFETs Operating in Avalanche Conditions. EPE 2005 - 11th European Conference on Power Electronics and Applications, Sep 2005, Dresden, Germany. 2005. <hal-00138894>
  • Cyril Buttay, Dominique Bergogne, Hervé Morel, Bruno Allard, René Ehlinger, et al.. A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge. EPE03, Sep 2003, Toulouse, France. pp.1-10, 2003. <hal-00413309>
  • Cyril Buttay, Dominique Bergogne, Hervé Morel, Bruno Allard, René Ehlinger, et al.. Towards a Sensorless Current and Temperature Monitoring in MOSFET-Based H-Bridge. PESC '03, Jun 2003, Accapulco, Mexico. IEEE, 2, pp.901 - 906, 2003. <hal-00413325>

Thèse1 document

  • Lucile Dumont. Rare Earth doped Si based frequency conversion layer for Si Solar Cell. Materials. Normandie Université, France; Université de Caen Normandie, 2016. English. <tel-01425297>

Article dans une revue61 documents

  • Thi Thanh Huyen Nguyen, Mihai Lazar, Jean Louis Augé, Hervé Morel, Luong Viet Phung, et al.. Vertical Termination Filled with Adequate Dielectric for SiC Devices in HVDC Applications. Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.982 - 985. <10.4028/www.scientific.net/MSF.858.982>. <hal-01391838>
  • Ilyas Dchar, Cyril Buttay, Hervé Morel. Avalanche robustness of SiC Schottky diode. Microelectronics Reliability, Elsevier, 2016, <10.1016/j.microrel.2016.07.086>. <hal-01373039>
  • Hatem Garrab, Jedidi Atef, Morel Hervé. A Novel Approach to Accurately Determine the tq Parameter of Thyristors. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2016, PP (99), <10.1109/TIE.2016.2609381>. <hal-01388609>
  • Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, et al.. Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs. Microelectronics Reliability, Elsevier, 2015, pp.6. <http://www.sciencedirect.com/science/article/pii/S0026271415001894>. <10.1016/j.microrel.2015.06.097>. <hal-01198584>
  • Selsabil Sejil, Farah Laariedh, Mihai Lazar, Davy Carole, Christian Brylinski, et al.. VLS Grown 4H-SiC Buried P+ Layers for JFET Lateral Structures. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.789 - 792. <10.4028/www.scientific.net/MSF.821-823.789>. <hal-01387983>
  • Jedidi Atef, Hatem Garrab, Morel Hervé, Kamel Besbes. A Novel approach to Extract the Thyristor Design Parameters for Designing of Power Electronic Systems. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2015, 62 (4), <10.1109/TIE.2014.2356440>. <hal-01388299>
  • Sameh Mtimet, Walid Ben Salah, Salah Tarek Ben, Ferid Kourda, Hervé Morel. An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING : electronic networks, devices and fields, 2015, 28 (3), pp. 287-300. <10.1002/jnm.2005>. <hal-01388318>
  • Sami Ghedira, Cyril Buttay, Hervé Morel, Kamel Besbes. Measurement and numerical analysis of C-V characteristics for normally-on SiCED-JFET. European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), pp.20103. <10.1051/epjap/2014130533>. <hal-01005929>
  • Anis Ammous, Hervé Morel. LVDC: An Efficient Energy Solution for On-Grid Photovoltaic Applications. Smart Grid and Renewable Energy, 2014, 5 (4), pp.63-76. <10.4236/sgre.2014.54007>. <hal-01005973>
  • Hervé Morel, Aymen Ammouri, Walid Ben Salah, Sofiane Khachroumi, Tarek Ben Salah, et al.. Development of a physically-based planar inductors VHDL-AMS model for integrated power converter design. European Physical Journal: Applied Physics, EDP Sciences, 2014, 66 (2), pp.20901. <10.1051/epjap/2014130430>. <hal-01006044>
  • Amandine Masson, Wissam Sabbah, Raphaël Riva, Cyril Buttay, Stephane Azzopardi, et al.. Die attach using silver sintering. Practical implementation and analysis. European Journal of Electrical Engineering, 2013, 16 (3-4), pp.293-305. <10.3166/ejee.16.293-305>. <hal-00874465>
  • Rémy Ouaida, Cyril Buttay, Anh Dung Hoang, Raphaël Riva, Dominique Bergogne, et al.. Thermal Runaway Robustness of SiC VJFETs. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.929-933. <10.4028/www.scientific.net/MSF.740-742.929>. <hal-00799884>
  • Cyril Buttay, Rémy Ouaida, Hervé Morel, Dominique Bergogne, Christophe Raynaud, et al.. Thermal Stability of Silicon Carbide Power JFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60 (12), pp.4191 - 4198. <10.1109/TED.2013.2287714>. <hal-00881667>
  • Dominique Bergogne, Cyril Buttay, Rémi Robutel, Fabien Dubois, Rémy Ouaida, et al.. Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages. EPE Journal, 2013, 23 (3), pp.5--12. <hal-00997389>
  • Rémi Robutel, Christian Martin, Cyril Buttay, Hervé Morel, Paulo Mattavelli, et al.. Design and Implementation of Integrated Common Mode Capacitors for SiC JFET Inverters. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2013, PP (99), pp.1. <10.1109/TPEL.2013.2279772>. <hal-00874455>
  • Bassem Mouawad, Maher Soueidan, Damien Fabregue, Cyril Buttay, Vincent Bley, et al.. Full densification of Molybdenum powders using Spark Plasma Sintering. Metallurgical and Materials Transactions A, Springer Verlag/ASM International, 2012, pp.1-8. <10.1007/s11661-012-1144-2>. <hal-00707782>
  • Hanen Mejbri, Hervé Morel, Kaiçar Ammous, Anis Ammous. Multi-Objective Optimization of Power Converter Sizing Based on Genetic Algorithms: Application to Photovoltaic Systems. International Review on Modelling and Simulations, 2012, 5 (2), pp. 826-839. <hal-00854436>
  • B. Omri, Kaiçar Ammous, Anis Ammous, Hervé Morel. Nonlinear average modeling of multilevel converters. International Review on Modelling and Simulations, 2012, 5 (1), pp.154-163. <hal-00747412>
  • H. Mejbri, Kaiçar Ammous, Hervé Morel, Anis Ammous. Optimal design of power converter using multi-objective genetic algorithm. International Review on Modelling and Simulations, 2012, 5 (2), pp.793-802. <hal-00747409>
  • Bassem Mouawad, Maher Soueidan, Damien Fabrègue, Cyril Buttay, Bruno Allard, et al.. Application of the Spark Plasma Sintering Technique to Low-Temperature Copper Bonding. IEEE Transactions on Components and Packaging Technologies, Institute of Electrical and Electronics Engineers, 2012, 2 (4), pp.553 - 560. <10.1109/TCPMT.2012.2186453>. <hal-00672244>
  • Cyril Buttay, Christophe Raynaud, Hervé Morel, Gabriel Civrac, Marie-Laure Locatelli, et al.. Thermal stability of silicon-carbide power diodes. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (3), pp.761-769. <10.1109/TED.2011.2181390>. <hal-00672440>
  • Fabien Dubois, Dominique Bergogne, Cyril Buttay, Hervé Morel, Régis Meuret. Normally-On SIC JFETs: Active Protections. EPE Journal, 2012, 22 (3), pp.6-13. <hal-00821756>
  • Tarek Ben Salah, Sameh Mtimet, Hervé Morel. SiC-junction field effect transistor temperature sensor: Theoretical analysis and experimental validation. Sensor letters, American Scientific Publishers, 2011, 9 (6), pp.2347-2350. <10.1166/sl.2011.1762>. <hal-00747433>
  • Rami Mousa, Dominique Planson, Hervé Morel. Characterization and VHDL-AMS modeling of SiC-JFET transistor. European Journal of Electrical Engineering, 2011, 14 (1), pp.7-27. <10.3166/EJEE.14.7-27>. <hal-00747438>
  • Tarek Ben Salah, Y. Lahbib, Hervé Morel. Modelling, analysis, and experimental study of SiC JFET body diode. European Physical Journal: Applied Physics, EDP Sciences, 2011, 53 (1), pp.Article Number: 10301. <10.1051/epjap/2010100172>. <hal-00579353>
  • Kaiçar Ammous, Hervé Morel, Anis Ammous. Inverse Models of Voltage and Current Probes. IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2011, 60 (12), pp.3898 - 3906. <10.1109/TIM.2011.2144710>. <hal-00629210>
  • Rémi Robutel, Christian Martin, Hervé Morel, Cyril Buttay, Nicolas Gazel, et al.. Design of a High Temperature EMI Input Filter for a 2 kW HVDC-Fed Inverter. Journal of Microelectronics and Electronic Packaging, 2011, 8 (1), pp.23-30. <hal-00729066>
  • Dominique Tournier, Pierre Brosselard, Christophe Raynaud, Mihai Lazar, Hervé Morel, et al.. Wide Band Gap Semiconductors Benefits for High Power, High Voltage and High Temperature Applications. Advanced Materials Research, Trans Tech Publications, 2011, Advances in Innovative Materials and Applications, pp.46-51. <10.4028/www.scientific.net/AMR.324.46>. <hal-00799902>
  • Cyril Buttay, Dominique Planson, Bruno Allard, Dominique Bergogne, Pascal Bevilacqua, et al.. State of the art of high temperature power electronics. Materials Science and Engineering: B, Elsevier, 2011, 176 (4), pp.283-288. <10.1016/j.mseb.2010.10.003>. <hal-00597432>
  • Christophe Raynaud, Dominique Tournier, Hervé Morel, Dominique Planson. Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices. Diamond and Related Materials, Elsevier, 2010, 19 (1), pp.1-6. <10.1016/j.diamond.2009.09.015>. <hal-00476195>
  • Tarek Ben Salah, Sofiane Khachroumi, Hervé Morel. Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications. Sensors, MDPI, 2010, 10 (1), pp.388-399. <10.3390/s100100388>. <hal-00476196>
  • Tarek Ben Salah, Hervé Morel, Sameh Mtimet. Toward SiC-JFETs modelling with temperature dependence. European Physical Journal: Applied Physics, EDP Sciences, 2010, 52 (2), pp.Article number 20301. <10.1051/epjap/2010139>. <hal-00539603>
  • Kaiçar Ammous, Hervé Morel, Anis Ammous. Analysis of Power Switching Losses Accounting Probe Modeling. IEEE Transactions on Instrumentation and Measurement, Institute of Electrical and Electronics Engineers, 2010, 59 (12), pp.3218 - 3226. <10.1109/TIM.2010.2047302>. <hal-00539180>
  • Olivier Berry, Youness Hamieh, Stéphane Rael, Farid Meibody-Tabar, Sébastien Vieillard, et al.. Minimization of drain-to-gate interaction in a SiC JFET inverter using an external gate-source capacitor. Materials Science Forum, Trans Tech Publications Inc., 2010, 645-6648, pp.957-960. <10.4028/www.scientific.net/MSF.645-64>. <hal-00539615>
  • Tarek Ben Salah, Mahbouba Amairi, Zina Sassi, Hervé Morel. Epitaxial Layer Parameters Estimation Approach of Silicon Carbide Schottky Diodes. Sensor letters, American Scientific Publishers, 2009, 7 (5), pp.707-711. <10.1166/sl.2009.1135>. <hal-00476197>
  • Tarek Ben Salah, Y. Lahbib, Hervé Morel. SiC-VJFETs power switching devices: an improved model and parameter optimization technique. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2009, 48 (3), pp.Article Number: 30305. <10.1051/epjap/2009187>. <hal-00476199>
  • Pierre Lefranc, Dominique Planson, Hervé Morel, Dominique Bergogne. Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT). Solid-State Electronics, Elsevier, 2009, 53 (9), pp.944-954. <10.1016/j.sse.2009.06.009>. <hal-00476201>
  • Bruno Allard, Xavier Jordà, Pierre Bidan, Axel Rumeau, Hervé Morel, et al.. Reduced-Order Thermal Behavioral Model Based on Diffusive Representation. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2009, 24 (12), pp.2833-2846. <10.1109/TPEL.2009.2028231>. <hal-00476198>
  • Tarek Ben Salah, Damien Risaletto, Christophe Raynaud, Kamel Besbes, Dominique Bergogne, et al.. Determination of ambipolar lifetime and epilayer thickness of 5kV SiC bipolar devices by transient switching studies. Materials Science Forum, Trans Tech Publications Inc., 2008, 600-603, pp.1031-1034. <10.4028/www.scientific.net/MSF.600-603.1031>. <hal-00391482>
  • Hervé Morel, Dominique Bergogne, Dominique Planson, Bruno Allard, Régis Meuret. New Applications in Power Electronics Based on SiC Power Devices. Materials Science Forum, Trans Tech Publications Inc., 2008, 600-603, pp.925-930. <10.4028/www.scientific.net/MSF.600-603.925>. <hal-00400634>
  • Bruno Allard, Hatem Garrab, Tarek Ben Salah, Hervé Morel, Kaiçar Ammous, et al.. On the role of the N-N+ junction doping profile of a PIN diode on its turn-off transient behavior. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2008, 23 (1), pp.491-494. <10.1109/TPEL.2007.911882>. <hal-00313945>
  • S. Abis, Kaiçar Ammous, Hervé Morel, Anis Ammous. Advanced averaged model of PWM-Switch operating in CCM and DCM conduction modes. International Review of Electrical Engineering, 2007, 4 (2), pp.544-556. <hal-00357024>
  • Tarek Ben Salah, Sami Ghedira, Hatem Garrab, Hervé Morel, Damien Risaletto, et al.. A novel approach to extract accurate design parameters of PiN diode. International Journal of Numerical Modelling Electronic Networks Devices and Fields, 2007, 20 (6), pp.283-297. <10.1002/jnm.646>. <hal-00358834>
  • Tarek Ben Salah, Cyril Buttay, Bruno Allard, Hervé Morel, Sami Ghedira, et al.. Experimental Analysis of Punch-Through Conditions in Power P-I-N Diodes. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2007, 22 (1), pp.13-20. <10.1109/TPEL.2006.886648>. <hal-00135198>
  • Tarek Ben Salah, Hatem Garrab, Sami Ghedira, Bruno Allard, Damien Risaletto, et al.. A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices. Superlattices and Microstructures, Elsevier, 2006, 40 (4-6), pp.580-587. <hal-00140085>
  • Cyril Buttay, Hervé Morel, Bruno Allard, Pierre Lefranc, Olivier Brevet. Model Requirements for Simulation of Low-Voltage MOSFET in Automotive Applications. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2006, 21 (3), pp.613-624. <10.1109/TPEL.2006.872383>. <hal-00138878>
  • Bruno Allard, Hatem Garrab, Hervé Morel. Electro-thermal simulation including a temperature distribution inside power semiconductor devices. International Journal of Electronics, Taylor & Francis, 2005, 92 (4), pp.189-213. <hal-00140854>
  • Hatem Garrab, Bruno Allard, Hervé Morel, Kaiçar Ammous, Sami Ghedira, et al.. On the extraction of PiN diode design parameters for validation of integrated power converter design. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2005, 20 (3), pp.660-670. <10.1109/TPEL.2005.846544>. <hal-00140858>
  • Hatem Garrab, Bruno Allard, Hervé Morel, Sami Ghedira, Kamel Besbes. Role of the temperature distribution on the PN junction behaviour in the electro-thermal simulation. INTERNATIONAL JOURNAL OF NUMERICAL MODELLING : electronic networks, devices and fields, 2004, 17 (6): 539-560 NOV-DEC 2004 (6), pp.539-560. <hal-00140093>
  • Cyril Buttay, Tarek Ben Salah, Dominique Bergogne, Bruno Allard, Hervé Morel, et al.. Avalanche Behavior of Low-Voltage Power MOSFETs. IEEE Power Electronics Letters, Institute of Electrical and Electronics Engineers, 2004, 2 (3), pp.104-107. <10.1109/LPEL.2004.839638>. <hal-00138863>
  • Anis Ammous, M. Ayedi, Y. Ounajjar, Fayçal Sellami, Kaiçar Ammous, et al.. Developing an advanced PWM-switch model including semiconductor device non-linearities. European Physical Journal: Applied Physics, EDP Sciences, 2003, 21 (2), pp.107-120. <hal-00140101>
  • Anis Ammous, Fayçal Sellami, Kaiçar Ammous, Hervé Morel, Bruno Allard, et al.. Developing an equivalent thermal model for discrete semiconductor packages. International Journal of Thermal Sciences, Elsevier, 2003, 42 (5), pp.533-539. <hal-00140112>
  • Bruno Allard, Hervé Morel, Xuefang Lin-Shi, Jean-Marie Rétif. Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande. Revue Internationale de Génie Electrique, 2002, 5 (1), pp.183-201. <hal-00143561>
  • Xuefang Lin-Shi, Jean-Marie Rétif, Bruno Allard, Hervé Morel. Non-linear control design for a boost converter using bond graphs. Proceedings of the Institution of Mechanical Engineers, Part I: Journal of Systems and Control Engineering, SAGE Publications, 2002, 216 (I1), pp.1-11. <hal-00140094>
  • Bruno Allard, Hervé Morel, Xuefang Lin-Shi, Jean-Marie Rétif. Modèle moyen de l'onduleur triphasé de tension pour la conception de lois de commande. European Journal of Electrical Engineering, 2002, 5 (1), pp.183-201. <10.3166/rige.5.183-201>. <hal-00403393>
  • Nouri Massmoudi, Djébé M'Baïri, Bruno Allard, Hervé Morel. On the validity of the standard SPICE model of the diode for simulation in power electronics. IEEE Transactions on Industrial Electronics, Institute of Electrical and Electronics Engineers, 2001, 48 (4), pp.864-867. <hal-00140095>
  • Anis Ammous, Kaiçar Ammous, Hervé Morel, Bruno Allard, Dominique Bergogne, et al.. Electrothermal modeling of IGBT's: Application to short-circuit conditions. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2000, 15 (4), pp.778-790. <hal-00140098>
  • Anis Ammous, Sami Ghedira, Bruno Allard, Hervé Morel, Denise Renault. Choosing a thermal model for electrothermal simulation of power semiconductor devices. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1999, 14 (2), pp.300-307. <hal-00140099>
  • Anis Ammous, Bruno Allard, Hervé Morel. Transient temperature measurements and modeling of IGBT's under short circuit. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1998, 13 (1), pp.12-25. <hal-00140100>
  • H. Fraisse, Jean-Pierre Masson, F. Marthouret, Hervé Morel. MODELING OF A NONLINEAR CONDUCTIVE MAGNETIC-CIRCUIT .2. BOND GRAPH FORMULATION. IEEE Transactions on Magnetics, Institute of Electrical and Electronics Engineers, 1995, 31 (6), pp.4068-4070. <hal-00140102>
  • Hervé Morel, S. Gamal, Jean-Pierre Chante. STATE-VARIABLE MODELING OF THE POWER PIN DIODE USING AN EXPLICIT APPROXIMATION OF SEMICONDUCTOR-DEVICE EQUATIONS - A NOVEL-APPROACH. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 1994, 9 (1), pp.112-120. <hal-00140103>

HDR1 document

  • Hervé Morel. Modélisation et simulation des composants et des systèmes électroniques de puissance. Energie électrique. INSA de Lyon, 1994. <tel-00731059>

Autre publication1 document

  • Hassan Helali, Hervé Morel, Dominique Bergogne, Jean-Luc Schanen, Jean-Michel Guichon. Méthode de calcul de spectres CEM à base de graphes de liens. Application au hacheur série. Colloque EPF'2006 Grenoble. 2006. <hal-00200802>