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Hervé Folliot
14
Documents
Identifiants chercheurs
herve-folliot- IdRef : 13913266X
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0000-0002-1392-4865
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Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogenApplied Physics Letters, 2011, 98, pp.251110. ⟨10.1063/1.3601857⟩
Article dans une revue
hal-00654272v1
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Light emitting diodes on silicon substrates: preliminary resultsphysica status solidi (c), 2009, 6 (10), pp.2212-2216. ⟨10.1002/PSSC.200881728⟩
Article dans une revue
hal-00665750v1
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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QDJournal of Physics D: Applied Physics, 2008, 41, pp.165505. ⟨10.1088/0022-3727/41/16/165505⟩
Article dans une revue
hal-00491451v1
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Design of an InGaAs/InP 1.55 µm electrically pumped VCSELOptical and Quantum Electronics, 2008, 40 (14-15), pp.1193-98. ⟨10.1007/s11082-009-9306-1⟩
Article dans une revue
hal-00483143v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
hal-00809031v1
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
hal-00654285v1
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Réalisation d'une DEL à puits quantiques de GaAsP sur substrat GaPINNOV'INSA (Recherche, développement, innovation et transfert à l'INSA), May 2010, Rennes, France. pp.1
Communication dans un congrès
hal-00504484v1
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Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur siliciumSéminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès
hal-00504506v1
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Photocurrent study of InAs/GaInAsP(Q1.18) quantum dotsIndium Phosphide and Related Materials (IPRM), May 2008, Versailles, France. pp.309-11, ⟨10.1109/ICIPRM.2008.4702977⟩
Communication dans un congrès
hal-00501639v1
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Photoluminescence de nanostructures sur substrat GaP/SiJournées Nanosciences de Bretagne (JNB2), May 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00489402v1
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Light emitting diodes on silicon substrates: preliminary resultsTNT (Trends in Nanotechnologies), Sep 2008, Oviedo, Spain. pp.2212-16, ⟨10.1002/pssc.200881728⟩
Communication dans un congrès
hal-00491905v1
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Design of InGaAs/InP 1.55μm vertical cavity surface emitting lasersInternational Conference on Numerical Simulation of Optoelectronic Devices (NUSOD '08), Sep 2008, Nottingham, United Kingdom. p 1-2, ⟨10.1109/NUSOD.2008.4668208⟩
Communication dans un congrès
hal-00490938v1
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First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès
hal-00491426v1
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Preliminary results for the realization of light emitters on silicon substrateSQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès
hal-00491914v1
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