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Hervé Folliot

17
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antoine-letoublon

Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates

Olivier Durand , Samy Almosni , Pierre Râle , J. Rodière , Yanping Wang
European Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès hal-01115019v1

gamma-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs)

Cédric Robert Robert , Charles Cornet , Olivier Durand , K. Pereira da Silva , Pascal Turban
European Materials research society meeting EMRS 2013, May 2013, Strasbourg, France
Communication dans un congrès hal-00918730v1

Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayers

Yu Zhao , Nicolas Bertru , Hervé Folliot , Mathieu Perrin , Soline Boyer-Richard
International Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès hal-00809031v1

coherent integration of photonics on silicon through the growth of GaP/Si

Thanh Tra Nguyen , Cédric Robert , Charles Cornet , Weiming Guo , Antoine Létoublon
Technical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès hal-00788526v1

Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si

Thanh Tra Nguyen , Cédric Robert Robert , Charles Cornet , Weiming Guo , Antoine Létoublon
Photonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès hal-00654337v1

Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon

Charles Cornet , Cédric Robert Robert , Thanh Tra Nguyen , Weiming Guo , Alexandre Bondi
Compound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès hal-00654285v1
Image document

Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l'optoélectronique sur silicium

Charles Cornet , Antoine Létoublon , Weiming Guo , Alexandre Bondi , Soline Richard
Séminaire PONANT 2010, Jul 2010, Rennes, France. pp.9-11
Communication dans un congrès hal-00504506v1

Transition fils boites dans le système InAs/InP (100)

Wei Lu , Ibrahim Alghoraibi , Georges Elias , Abdulhadi Nakkar , Antoine Létoublon
Journées de la Société Française de métallurgie et matériaux (SF2M), Jun 2009, Rennes, France. pp.W. Lu
Communication dans un congrès hal-00486673v1

Effect of lateral coupling on the carrier redistribution in InAs/InP(311)B high dots surface density

Christophe Labbé , Abdulhadi Nakkar , François Doré , Hervé Folliot , Antoine Létoublon
International Workshop on Semiconductor Quantum Dot Devices and Applications, Jul 2008, rennes, France. pp.1
Communication dans un congrès hal-00491786v1

Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate

Weiming Guo , Alexandre Bondi , Bassem Alsahwa , Charles Cornet , Antoine Létoublon
(International Workshop on Semiconductor Quantum Dot Devices and Applications), Jul 2008, Rennes, France. pp.1
Communication dans un congrès hal-00491776v1

Croissance par MBE de Boites quantiques InP sur GaP/Si

Weiming Guo , Alexandre Bondi , Hervé Folliot , Charles Cornet , Antoine Létoublon
journées nanoscience de Bretagne, Jun 2008, Nantes, France. pp.1
Communication dans un congrès hal-00491778v1

First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

Weiming Guo , Alexandre Bondi , Charles Cornet , Hervé Folliot , Antoine Létoublon
9th International Conference Trends in Nanotechnologies (TNT 2008), Sep 2008, Oviedo, Spain. pp.2207, ⟨10.1002/pssc.200881722⟩
Communication dans un congrès hal-00491426v1

InAs quantum dots grown on GaAsSb buffer layer lattice matched on InP

Wei Lu , Antoine Létoublon , Nicolas Bertru , Hervé Folliot , Alain Le Corre
2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures, Dec 2007, Paris, France. pp.W. Lu
Communication dans un congrès hal-00486709v1