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Hervé Folliot
11
Documents
Identifiants chercheurs
- herve-folliot
- IdRef : 13913266X
- 0000-0002-1392-4865
Présentation
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Sb surfactant mediated growth of InAs/AlAs0.56Sb0.44 strained quantum well for intersubband absorption at 1.55 μmApplied Physics Letters, 2015, 106 (8), pp.081908. ⟨10.1063/1.4913845⟩
Article dans une revue
hal-01140104v1
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Achievement of InSb Quantum Dots on InP(100) SubstratesJapanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2010, 49, pp.060210-1. ⟨10.1143/JJAP.49.060210⟩
Article dans une revue
hal-00489868v1
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Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrateActa Materialia, 2010, 58 (9), pp.3238. ⟨10.1016/j.actamat.2010.01.047⟩
Article dans une revue
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Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substratesEuropean Materials Research Society 2014 Sptring Meeting (E-MRS 2014), May 2014, Lille, France
Communication dans un congrès
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Sb surface mediated growth of InAs on InP(100) and (311)B substratesEuro-mbe conference, Mar 2013, Levi, Finland
Communication dans un congrès
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coherent integration of photonics on silicon through the growth of GaP/SiTechnical Meeting of Sandie European Network of Excellence, 2012, Berlin, Germany
Communication dans un congrès
hal-00788526v1
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Sb surfactant mediated growth of InAs/AlAsSb quantum wells up to 8 monolayersInternational Conference on Superlattices, Nanostructures and Nanodevices, Jul 2012, Dresden, Germany
Communication dans un congrès
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Coherent integration of photonics on silicon through the growth of nanostructures on GaP/SiPhotonics west 2012, Jan 2012, San Fransisco, United States. pp.82681H, ⟨10.1117/12.910279⟩
Communication dans un congrès
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Carrier injection in GaAsP(N)/GaPN Quantum Wells on SiliconCompound Semiconductor Week 2011 - 23rd International Conference on Indium Phosphide and Related Materials (IPRM 2011), May 2011, Berlin, Germany. pp.1
Communication dans un congrès
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QD laser on InP substrate for 1.55 µm emission and beyondSPIE Photonics West - OPTO 2010, Jan 2010, San Francisco, United States. pp.76081B, ⟨10.1117/12.848398⟩
Communication dans un congrès
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Lasers à îlots quantiques InAs/InP émettant à 1.55 µm pompés électriquement10èmes Journées Nationales Microélectronique Optoélectronique (JNMO 2004), Jun 2004, La Grande Motte, France
Communication dans un congrès
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