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	Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure L. Desplanque , D. Vignaud , S. Godey , E. Cadio , S.R. Plissard Journal of Applied Physics, 2010, 108, pp.043704. ⟨10.1063/1.3475709⟩ Article dans une revue hal-00709521v1

	Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructures for high speed and low power consumption electronic devices L. Desplanque , D. Vignaud , S. Godey , S.R. Plissard , E. Cadio 16th International Conference on Molecular Beam Epitaxy, MBE 2010, 2010, Berlin, Germany Communication dans un congrès hal-00573659v1
	Electronic properties of the Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure L. Desplanque , D. Vignaud , S. Godey , E. Cadio , P. Liu 22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Kagawa, Japan Communication dans un congrès hal-00573576v1

Hermann Sellier