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27

Henda CHAABOUNI


Article dans une revue13 documents

  • Marco Minissale, A. Moudens, S. Baouche, H. Chaabouni, F. Dulieu. Hydrogenation of CO-bearing species on grains: Unexpected chemical desorption of CO. Monthly Notices of the Royal Astronomical Society, Oxford University Press (OUP): Policy P - Oxford Open Option A, 2016, 458 (3), pp.2953. 〈10.1093/mnras/stw373〉. 〈hal-01346090〉
  • H. Chaabouni, A. Fayolle, F. Ghorbel, Y. Boujelbene. L'entrepreneur effectual face aux limites du plan d'affaires. Entreprendre & Innover, De Boeck Supérieur, 2012, p. 25-32. 〈halshs-00848906〉
  • N. Posseme, T. David, T. Chevolleau, Maxime Darnon, F. Bailly, et al.. Study of Porous SiOCH Patterning Using Metallic Hard Mask: Challenges and Solutions. ECS Transactions, Electrochemical Society, Inc., 2011, pp.35 (4), 667-685. 〈hal-00629313〉
  • M. Lattelais, M. Bertin, H. Mokrane, C. Romanzin, X. Michaut, et al.. Differential adsorption of complex organic molecules isomers at interstellar ice. Astronomy and Astrophysics - A&A, EDP Sciences, 2011, 532, pp.A12. 〈hal-00635974〉
  • M. Chehrouri, J.-H. Fillion, H. Chaabouni, H. Mokrane, E. Congiu, et al.. Nuclear Spin Conversion of Molecular Hydrogen on Amorphous Solid Water in the presence of O2 traces. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2011, 13, pp.2172-2178. 〈hal-00635968〉
  • M. Chehrouri, J.-H. Fillion, H. Chaabouni, H. Mokrane, E. Congiu, et al.. Nuclear Spin Conversion of Molecular Hydrogen on Amorphous Solid Water in the presence of O2 traces. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2011, 13, pp.2172-2178. 〈hal-00635927〉
  • M. Lattelais, M. Bertin, H. Mokrane, C. Romanzin, X. Michaut, et al.. Differential adsorption of complex organic molecules isomers at interstellar ice surfaces. Astronomy and Astrophysics - A&A, EDP Sciences, 2011, 532, 〈10.1051/0004-6361/201016184〉. 〈hal-01480772〉
  • Jean-Louis Lemaire, G. Vidali, S. Baouche, M. Chehrouri, H. Chaabouni, et al.. COMPETING MECHANISMS OF MOLECULAR HYDROGEN FORMATION IN CONDITIONS RELEVANT TO THE INTERSTELLAR MEDIUM. The Astrophysical journal letters, Bristol : IOP Publishing, 2010, 725, pp.L156-L160. 〈hal-00575649〉
  • Christelle Dubois, Alain Sylvestre, H. Chaabouni, A. Farcy. Impact of the CMP process on the electrical properties of ultra low k porous SIOCH. Microelectronic Engineering, Elsevier, 2010, pp.333-336. 〈hal-00626789〉
  • L.L. Chapelon, H. Chaabouni, G. Imbert, P. Brun, M. Mellier, et al.. Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond. Microelectronic Engineering, Elsevier, 2008, pp.85 Issue: 10 (2008) 2098-2101. 〈hal-00466362〉
  • M. Aimadeddine, V. Jousseaume, V. Amal, L. Favennec, A. Farcy, et al.. Robust integration of an ULK SiOCH dielectric (k=2.3) for high performance 32nm node BEOL. Proceedings of the IEEE 2007 International Interconnect Technology Conference, 2007, pp.175-177. 〈hal-00466357〉
  • R. Delsol, L.L. Chapelon, H. Chaabouni, L. Broussous, M. Schellenberger, et al.. Integrated monitoring of ULK dielectrics out-gassing and measurement of pore sealing efficiency by residual gas analysis technique. Microelectronic Engineering, Elsevier, 2007, pp.84 Issue: 11 (2007) 2719-2722. 〈hal-00466360〉
  • H. Chaabouni, L.L. Chapelon, M. Aimadeddine, J. Vitiello, A. Farcy, et al.. Side wall restoration of porous ultra low k dielectrics for sub-45 nm technology nodes. Microelectronic Engineering, Elsevier, 2007, 84, pp.2595-2599. 〈hal-00397091〉

Communication dans un congrès14 documents

  • Didier Chabaud, Kamel Krichen, H. Chaabouni, Alain Fayolle. L’impact de la perception du risque des chercheurs universitaires sur l’intention de créer des spin-offs. 7ème congrès de l’Académie de l’Entrepreneuriat et de l’Innovation (AEI), Oct 2011, Paris, France. 〈hal-01321706〉
  • M. Lattelais, M. Bertin, J.H. Mokrane, F. Pauzat, J. Pilmé, et al.. Differential adsorption of complex organic molecules isomers at interstellar ices surfaces (Affiche). European Conference on Laboratory Astrophysics, Sep 2011, Paris, France. 〈hal-00659705〉
  • M. Bertin, M. Lattelais, H. Mokrane, F. Pauzat, J. Pilmé, et al.. Differential Adsorption of Complex Organic Molecules Isomers at Interstellar Ices Surfaces -Affiche. IAU (International Astronomy Union) symposium 280, the molecular Universe, Jun 2011, Tolède, Spain. 〈hal-00661032〉
  • Cadix L., Rousseau M., Fuchs C., Leduc P., Thuaire A., et al.. « Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs”. IEEE International Interconnect Technology Conference,, Jun 2010, San Francisco, United States. 〈hal-01074766〉
  • T. Chevolleau, N. Posseme, T. David, R. Bouyssou, J. Ducote, et al.. Plasma Etching Process Scalability and challenges for ULK Materials. IITC 2010, Jun 2010, Burlingame USA., United States. 〈hal-00623452〉
  • Chaabouni H., Rousseau M., Leduc P., Farcy A., Farhane R. El, et al.. « Investigation on TSV impact on 65nm CMOS devices and circuits ». , IEEE International Electron Devices Meeting,, Dec 2010, San Francisco, United States. 〈hal-01074810〉
  • L. Cadix, C. Fuchs, M. Rousseau, P. Leduc, H. Chaabouni, et al.. " Integration and frequency dependent parametric modeling of Through Silicon Via involved in high density 3D chip stacking". IEEE Electrochemical Society Meeting, Jun 2010, Las Vegas, United States. 2010. 〈hal-00604334〉
  • L. Cadix, M. Rousseau, C. Fuchs, P. Leduc, Aurélie Thuaire, et al.. " Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs". IEEE International Interconnect Technology Conference, Jun 2010, San Francisco, United States. 2010. 〈hal-00604331〉
  • H. Chaabouni, M. Rousseau, P. Leduc, A. Farcy, R. El Farhane, et al.. " Investigation on TSV impact on 65nm CMOS devices and circuits ". IEEE International Electron Devices Meeting,, Dec 2010, San Francisco, United States. 2010. 〈hal-00604339〉
  • M. Gallitre, B. Blampey, H. Chaabouni, A. Farcy, P. Grosgeorges, et al.. Impact of ULK restoration techniques on propagation performance for interconnects of the 45 nm technology node and below. 12th IEEE Signal Propagation on Interconnects, May 2008, France. 2008. 〈hal-00397907〉
  • H. Chaabouni, G. Imbert, L.L. Chapelon, D. Fossati, C. Licitra, et al.. Porous SiOCH Ultra Low-K recovery treatments after direct CMP process. AMC, Advanced Metallization conference, 2008, United States. 〈hal-00398954〉
  • M. Gallitre, B. Blampey, B. Fléchet, A. Farcy, V. Arnal, et al.. First evidence of dielectric loss effects with ultra low-k materials and impact on interconnect propagation performance. Materials for Advanced Metallization Conf, Mar 2008, France. 2008. 〈hal-00397857〉
  • H. Chaabouni, L.L. Chapelon, T. Chevolleau, R. Bouyssou, O. Joubert, et al.. Restoration solutions for plasma-damaged Ultra Low k for the 45nm technology node and beyond. Proceeding of AMC, Advanced Metallization conference, 2007, United States. 〈hal-00398868〉
  • J.-L. Lemaire, J.-H. Fillion, F. Dulieu, A. Momeni, L. Amiaud, et al.. H, O, and N interaction and reactivity on surfaces in laboratory and space. J.-L. Lemaire et F. Combes, Eds. International conference on Molecules in space and laboratory, Obs. de Paris et Univ. de Cergy-Pontoise, May 2007, Paris, France. pp.165, 2007. 〈hal-00367760〉