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Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate

 Alain Agboton , N. Defrance , Philippe Altuntas , Vanessa Avramovic , Adrien Cutivet , et al.
43rd Conference on European Solid-State Device Research, Sep 2013, Bucharest, Romania
Communication dans un congrès hal-03285110v1

Impact of plasma etching process exposure on the integrity of AlN and AlGaN layers integrated in GaN heterojunction transistors (HEMTs)

 Fesiienko Oleh , Erwine Pargon , Hassan Maher , Camille Petit-Etienne , Ali Soltani , et al.
Journées nationales sur les technologies émergentes en micro-nano fabrication, (JNTE2019), Nov 2019, Grenoble, France
Communication dans un congrès hal-02916150v1

Normally-OFF GaN HEMT Fabrication Using Soft and Selective Etching of the Si3N4 Cap Layer

 Meriem Bouchilaoun , Ali Soltani , Christophe Rodriguez , Abdelatif Jaouad , Hassan Maher
The compound semiconductor week (CSW), May 2018, Boston, United States
Communication dans un congrès hal-02310044v1

Fabrication Process of GaN-HEMT Based Technology

 Maher, Hassan
World Congress of Nano Science and Technology (Nano-S&T), Oct 2016, Singapour, Singapore
Communication dans un congrès hal-02310129v1

Investigation of Nitrogen-Vacancy Defects in Aluminum Nitride films

 A. Aghdaei , G. Laliberté , A. Akbari-Sharba , G. Gommé , Ali Soltani , et al.
Women in Physics Canada, Jul 2018, Sherbrooke, Canada
Communication dans un congrès hal-02310035v1

Development of technological building blocks for the monolithic integration of ammonia-MBE-grown GaN-HEMTs with silicon CMOS

 Rémi Comyn , Yvon Cordier , Sébastien Chenot , Abdelatif Jaouad , Hassan Maher , et al.
physica status solidi (a), 2016, 213 (4), pp.917 - 924. ⟨10.1002/pssa.201532732⟩
Article dans une revue istex hal-01918142v1
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A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

 Ali Soltani , Brahim Benbakhti , J.-C. Gerbedoen , Abdelkrim Khediri , Maher, Hassan , et al.
Applied Physics Letters, 2022, 120 (4), pp.042102. ⟨10.1063/5.0080240⟩
Article dans une revue hal-03544158v1

MEMS-4-MMIC : the next step in combined GaAs MEMS-MMIC technology

 L. Baggen , W. Simon , R. Malmqvist , T. Vaha-Heikkila , H. Maher , et al.
15th International Symposium on Antenna Technology and Applied Electromagnetics, ANTEM 2012, 2012, Toulouse, France. pp.1-5, ⟨10.1109/ANTEM.2012.6262342⟩
Communication dans un congrès hal-00801060v1

Analysis of InP/GaAsSb DHBT failure mechanisms under accelerated aging tests

 G. A. Koné , B. Grandchamp , C. Maneux , N. Labat , T. Zimmer , et al.
International Conference on Indium Phosphide and Related Materials (IPRM), 2012, Aug 2012, santa barbara, United States. pp.208-211
Communication dans un congrès hal-01002159v1
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Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

 Mamadou Lamine Beye , Thilini Wickramasinghe , Jean François Mogniotte , Luong Viêt Phung , Nadir Idir , et al.
Electronics, 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩
Article dans une revue hal-03341258v1

Calculation of PCB Power Loop Stray Inductance in GaN or High di/dt Applications

 Adrien Letellier , Maxime Dubois , Joao Pedro Fernandes Trovao , Hassan Maher
IEEE Transactions on Power Electronics, 2018, pp.1 - 1. ⟨10.1109/TPEL.2018.2826920⟩
Article dans une revue hal-01914258v1

Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements

 A. Cutivet , G. Pavlidis , B. Hassan , M. Bouchilaoun , C. Rodriguez , et al.
IEEE Transactions on Electron Devices, 2019, 66 (5), pp.2139-2145. ⟨10.1109/TED.2019.2906943⟩
Article dans une revue hal-02273386v1

Gallium Nitride (GaN) for high power applications

 Maher, Hassan
Global Nanotechnology Congress and Expo: NanoTec2016, Apr 2016, Dubai, United Arab Emirates
Communication dans un congrès hal-02310133v1

Normally-Off AlGaN/GaN MOS-HEMTs Using Ultra-Thin Al0.45GaN0.55N Barrier and PECVDSiOx as Gate Insulator

 Ahmed Chakroun , Abdelatif Jaouad , Meriem Bouchilaoun , Osvaldo Arenas , Ali Soltani , et al.
International Workshop on Nitride Semiconductors (IWM2016), Oct 2016, Orlando, United States
Communication dans un congrès hal-02310128v1

A 200-GHz true E-mode low-noise MHEMT

 Hassan Maher , Ikram El Makoudi , Peter Frijlink , Derek Smith , Marc Rocchi , et al.
IEEE Transactions on Electron Devices, 2007, 54 (7), pp.1626-1632. ⟨10.1109/TED.2007.899377⟩
Article dans une revue hal-00255758v1

Wafer-level BCB cap packaging of integrated MEMS switches with MMIC

 S. Seok , J.G. Kim , M. Fryziel , N. Rolland , P.A. Rolland , et al.
60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258270⟩
Communication dans un congrès hal-00801069v1

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

 Adrien Cutivet , Philippe Altuntas , N. Defrance , Etienne Okada , Vanessa Avramovic , et al.
10th European Microwave Integrated Circuits Conference (EuMIC), Sep 2015, Paris, France. pp.93-96, ⟨10.1109/EuMIC.2015.7345076⟩
Communication dans un congrès hal-03276915v1

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

 Aurélien Olivier , Nicolas Wichmann , Jiongjong Mo , Albert M.D. Noudeviwa , Yannick Roelens , et al.
22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩
Communication dans un congrès hal-00549921v1

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

 F. Lecourt , Y. Douvry , N. Defrance , Virginie Hoel , Jean-Claude de Jaeger , et al.
40th European Solid-State Device Research Conference, ESSDERC 2010, 2010, Spain. pp.281-284, ⟨10.1109/ESSDERC.2010.5618362⟩
Communication dans un congrès hal-00549999v1

[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformability

 Jean-Claude de Jaeger , Virginie Hoel , Marie Lesecq , N. Defrance , F. Lecourt , et al.
European Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom
Communication dans un congrès hal-00807597v1

A Highly Porous and Conductive Composite Gate Electrode for NO, NO2, O2, H2 and NH3 Exhaust Gas Sensors

 Hassane Ouazzani Chahdi , Omar Helli , Nour Eddine Bourzgui , Leo Breuil , David Danovich , et al.
18th International Meeting on Chemical Sensors, IMCS 2020, May 2020, Montreal, Canada. 2310, 1 page, ⟨10.1149/MA2020-01312310mtgabs⟩
Communication dans un congrès hal-02879903v1

Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

 Albert M.D. Noudeviwa , Yannick Roelens , Francois Danneville , Aurélien Olivier , Nicolas Wichmann , et al.
5th European Microwave Integrated Circuits Conference, EuMIC 2010, Sep 2010, Paris, France. pp.286-289
Communication dans un congrès hal-00549927v1

Comparative Study of Low Damage Plasma Etching Processes on the Integrity of AlGaN Layers Integrated in GaN HEMT During Gate Opening,

 O Fesiienko , C. Petit-Etienne , M. Darnon , A. Soltani , H. Maher , et al.
AVS 67 Virtual Symposium, Oct 2021, Virtual Symposium, United States
Communication dans un congrès hal-03448993v1
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New barrier layer design for the fabrication of gallium nitride-metal-insulator-semiconductor-high electron mobility transistor normally-off transistor

 Flavien Cozette , Bilal Hassan , Christophe Rodriguez , Eric Frayssinet , Rémi Comyn , et al.
Semiconductor Science and Technology, 2021, 36 (3), pp.034002. ⟨10.1088/1361-6641/abd489⟩
Article dans une revue hal-03341284v1
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Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

 S. Duffy , B. Benbakhti , M. Mattalah , W. Zhang , M. Bouchilaoun , et al.
UK Semiconductors 2017, Jul 2017, Sheffield, United Kingdom. pp.S3040-S3043, ⟨10.1149/2.0111711jss⟩
Communication dans un congrès hal-02310065v1

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

 Gwen Rolland , Christophe Rodriguez , Guillaume Gommé , Abderrahim Boucherif , Ahmed Chakroun , et al.
Energies, 2021, 14 (19), pp.6098. ⟨10.3390/en14196098⟩
Article dans une revue hal-03358709v1
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Multiphysics Characterizations of Vertical GaN Schottky Diodes

 Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry , et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩
Communication dans un congrès hal-03844585v1

Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance

 Bilal Hassan , Adrien Cutivet , Meriem Bouchilaoun , Christophe Rodriguez , Ali Soltani , et al.
physica status solidi (a), 2018, pp.1800505. ⟨10.1002/pssa.201800505⟩
Article dans une revue hal-02273403v1

AlGaN/GaN HEMT on Si (111) substrate for millimeter microwave power applications

 S. Bouzid , Virginie Hoel , N. Defrance , H. Maher , F. Lecourt , et al.
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.111-114, ⟨10.1109/ASDAM.2010.5666316⟩
Communication dans un congrès hal-00549981v1

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

 Maher, Hassan , Vincent Delmouly , U. Rouchy , Michel Renvoisé , Peter Frijlink , et al.
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68
Communication dans un congrès hal-00671674v1
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