Nombre de documents

34

CV de Guy Chichignoud


Communication dans un congrès12 documents

  • Y Delannoy, G Chichignoud, K Zaidat. Electromagnetic Processing of Materials at SIMaP : focus on Solar Silicon elaboration. 8th International Conference on Electromagnetic Processing of Materials, Oct 2015, Cannes, France. EPM2015. <hal-01331357>
  • M Vadon, Y Delannoy, G Chichignoud. Prediction of the energy efficiency of an Ar-H2-O2 plasma torch with Ansys Fluent. 8th International Conference on Electromagnetic Processing of Materials, Oct 2015, Cannes, France. EPM2015. <hal-01335680>
  • G. Chichignoud, Y Delannoy, F Cocco, P Rivat, L Natale. E–H Mode Transition of an Inductively Coupled Plasma Torch at Atmospheric Pressure. 8th International Conference on Electromagnetic Processing of Materials, Oct 2015, Cannes, France. EPM2015. <hal-01335950>
  • M. Pons, G. Chichignoud, K. Zaidat, E. Blanquet. CVD of silicon on steels for flexible solar cells. Indian Conference on Crystal Growth, 2015, Chennai, India. 2015. <hal-01138863>
  • G. Chichignoud, J. Altenberend, Y. Delannoy. E–H mode transition of an inductively coupled plasma torch at atmospheric pressure. Japan-France EPM Seminar 2014, Oct 2014, Pornichet, France. <hal-01149375>
  • L. Lhomond, A. Nouri, G. Chichignoud, Y. Delannoy, F. Richard, et al.. Crystal Growth of Silicon for Photovoltaics. Collaborative Conference on Crystal Growth (3CG), Nov 2014, Phuket, Thailand. <hal-01149359>
  • T. Duffar, K. Zaidat, L. Hachani, R. Boussaa, B. Saadi, et al.. Solidification of metallic alloys under travelling magnetic field. THERMEC 2013, Dec 2013, Las Vegas, United States. <hal-00947112>
  • N. Dechoux, M. Naili, G. Chichignoud, E. Blanquet, C. Jimenez, et al.. HTCVD of silicon on steels for the development of inexpensive solar cells. 5th International Conference on Functional Materials, ISFM2012, Dec 2012, Perth, Australia. University of Western Australia, Australie, pp.28-30. <hal-00947072>
  • G. Chichignoud, Y. Delannoy. Elaboration de silicium pour l'industrie photovoltaïque.. Conférence pluridisciplinaire sur les matériaux, Oct 2010, Nantes, France. <hal-00590588>
  • J.M. Dedulle, D. Chaussende, R. Madar, M. Pons, E. Blanquet, et al.. Croissance de semi-conducteurs à grand gap. CFM'07, 2007, France. pp.8, 2007. <hal-00196661>
  • G. Chichignoud, M. Pons, E. Blanquet, D. Chaussende, M. Anikin, et al.. High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. International Conference on Metallurgical cCoating and Thin Films, ICMCTF, 2006, San Diego, United States. 2006. <hal-00149073>
  • G. Chichignoud, E. Blanquet, M. Anikin, J.M. Bluet, P. Chaudouët, et al.. Large grain polySiC boules for wafer-bounding. Internatinal Conference on Silicon Carbide and Related Materials, ICSCRM2005, 2005, Pittsburgh, United States. 527-529, pp.71-74, 2006. <hal-00173118>

Article dans une revue18 documents

  • Simon Favre, Ioana Nuta, Guy Chichignoud, Kader Zaïdat, Christian Chatillon. Removing Phosphorus from Molten Silicon: A Thermodynamic Evaluation of Distillation. ECS J. Solid State Sci. Technol,, 2016, 5 (3), pp.P129-P137. <10.1149/2.0361602jss>. <hal-01367839>
  • M. Cablea, K. Zaidat, A. Gagnoud, A. Nouri, G. Chichignoud, et al.. Multi-crystalline silicon solidification under controlled forced convection. Journal of Crystal Growth, Elsevier, 2015, 417, pp.44-50. <hal-01148566>
  • M. Cablea, K. Zaidat, A. Gagnoud, A. Nouri, G. Chichignoud, et al.. Multi-crystalline silicon solidification under controlled forced convection. Journal of Crystal Growth, Elsevier, 2015, 417 (44-50), <10.1016/j.jcrysgro.2014.07.042>. <hal-01211334>
  • M. Cablea, K. Zaidat, A. Gagnoud, A. Nouri, G. Chichignoud, et al.. Multi-crystalline silicon solidification under controlled forced convection. Journal of Crystal Growth, Elsevier, 2015, 417 (417), pp.44-50. <10.1016/j.jcrysgro.2014.07.042>. <hal-01218319>
  • J. Altenberend, G. Chichignoud, Y. Delannoy. Atomic emission spectroscopy method for mixing studies in high power thermal plasmas. Spectrochimica Acta Part B: Atomic Spectroscopy, Elsevier, 2013, 89, pp.93-102. <10.1016/j.sab.2013.09.003>. <hal-00935022>
  • M. Beaudhuin, G. Chichignoud, P. Bertho, T. Duffar, M. Lemiti, et al.. Carbon reaction with levitated silicon - Experimental and thermodynamic approaches. Materials Chemistry and Physics, Elsevier, 2012, 133, pp.284-288. <hal-00679550>
  • J. Altenberend, G. Chichignoud, Y. Delannoy. E-H mode transition of a high-power inductively coupled plasma torch at atmospheric pressure with a metallic confinement tube.. Plasma Sources Science and Technology, IOP Publishing, 2012, 21 (4), <10.1088/0963-0252/21/4/045011>. <hal-00747592>
  • I. Gelard, G. Chichignoud, E. Blanquet, H.N. Xuan, R. Cruz, et al.. Stability of High Temperature Chemical Vapor Deposited Silicon Based Structures on Metals for Solar Conversion.. Journal of Nanoscience and Nanotechnology, American Scientific Publishers, 2011, 11 (9), pp.8318-8322. <10.1166/jnn.2011.5077>. <hal-00664178>
  • J. Altenberend, M. Maichrzak, Y. Delannoy, G. Chichignoud. Characterisation of an Ar-H 2--O 2 ICP by OES: Measurement of the atomic concentrations of H and O. Journal of Physics: Conference Series, IOP Publishing, 2011, 275 (1), pp.012001. <hal-00679554>
  • J.L. Santailler, C. Audoin, G. Chichignoud, R. Obrecht, B. Kaouache, et al.. Chemically assisted vapour transport for bulk ZnO crystal growth. Journal of Crystal Growth, Elsevier, 2010, 312 (23), pp.3417-3424. <10.1016/j.jcrysgro.2010.08.046>. <hal-00559574>
  • J. Degoulange, J. Pelletier, D. Bournonville, G. Chichignoud, Y. Delannoy, et al.. Experimental study of the effect of reactive gas injection geometry in atmospheric pressure inductive plasma torch on the chemical efficiency.. High Temp. Mater. Process, 2009, 13 (3-4), pp.315-624. <hal-00489907>
  • J. Degoulange, D. Pelletier, B. Bournonville, G. Chichignoud, Y. Delannoy, et al.. Experimental study of the effect of the reactive gas injection geometry in atmospheric pressure inductive plasma torch on the chemical efficiency.. Journal of High Temperature Material Processes, An International Quarterly of High Technology Plasma Processes, 2009, 13 (3-4), pp.315-324. <hal-00466807>
  • G. Chichignoud, M. Ucar, M. Pons, E. Blanquet. Chlorinated silicon carbide CVD revisited for polycristalline bulk growth. Surface and Coatings Technology, Elsevier, 2007, 201, pp.8888-8892. <hal-00114193>
  • Guy Chichignoud, Laurent Auvray, Elisabeth Blanquet, Mikhail Anikin, Etienne Pernot, et al.. Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding. Materials Science Forum, Trans Tech Publications Inc., 2006, 527-529, pp. 71-74. <10.4028/www.scientific.net/MSF.527-529.71>. <hal-00417197>
  • Didier Chaussende, Elisabeth Blanquet, Francis Baillet, Magali Ucar, Guy Chichignoud. Thermodynamic aspects of the growth of SiC single crystals using the CF-PVT process. Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. <10.1002/cvde.200606471>. <hal-00118819>
  • D. Chaussende, E. Blanquet, Francis Baillet, M. Ucar, G. Chichignoud. Thermodynamic Aspects of the Growth of SiC Single Crystals using the CF-PVT Process. Chemical Vapor Deposition, Wiley-VCH Verlag, 2006, 12 (8-9), pp.541-548. <hal-00141044>
  • G. Chichignoud, M. Pons, E. Blanquet, D. Chaussende, M. Anikin, et al.. High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. Surface and Coatings Technology, Elsevier, 2006, 201 (7), pp.4014-4020. <hal-00141052>
  • A. Fallet, G. Chichignoud, L. Martin, M. Suery, P. Jarry. Influence of barium addition on the microstructure and the rheological behavior of partially solidified Al-Cu alloys. Materials Science and Engineering: A, Elsevier, 2006, 426, pp.187-193. <hal-00141837>

Brevet4 documents

  • G. Chichignoud, E. Blanquet, I. Gelard, Carmen Jiménez, E. Sarigiannidou, et al.. Structure adaptée à la formation de cellules solaires. France, N° de brevet: FR2971086 (A1). EPM. 2012. <hal-00824463>
  • G. Chichignoud, M. Couchaud, J.L. Santailler. Procédé de préparation de polycristaux et monocristaux d(oxyde de zinc sur un germe par sublimation activée chimiquement à haute température. France, Patent n° : FR2929959 (B1). EPM. 2010. <hal-00697694>
  • G. Chichignoud, M. Couchaud, J.L. Santailler. Procédé de préparation de polycristaux et monocristaux d(oxyde de zinc sur un germe par sublimation activée chimiquement à haute température. France, Patent n° : EP 2262935 (A1). EPM. 2010. <hal-00697697>
  • J.L. Santailler, G. Chichignoud, M. Couchautd. PROCEDE DE PREPARATION DE POLYCRISTAUX ET DE MONOCRISTAUX D'OXYDE DE ZINC (ZNO) SUR UN GERME PAR SUBLIMATION ACTIVEE CHIMIQUEMENT A HAUTE TEMPERATURE. France, N° de brevet: FR2929959 (A1). EPM. 2009. <hal-00577737>