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204 résultats
[Invité] Nanofils de semiconducteurs : effets de confinement quantique et diélectrique22èmes Journées Surfaces-Interfaces, JSI 2008, Jan 2008, Grenoble, France
Communication dans un congrès
hal-00811725v1
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Comment on "Size-dependent composition and molar extinction coefficient of PbSe semiconductor nanocrystalsACS Nano, 2009, 3, pp.2053. ⟨10.1021/nn9005363⟩
Article dans une revue
hal-00473074v1
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Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defectsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩
Article dans une revue
hal-00473094v1
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Scanning tunneling microscopy and spectroscopy of conjugated oligomers weakly bonded on Si(100) surfaces : a theoretical studyPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.165435-1-6. ⟨10.1103/PhysRevB.71.165435⟩
Article dans une revue
hal-00126419v1
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Role of impact ionization in multiple exciton generation in PbSe nanocrystalsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2006, 73, pp.205423-1-5. ⟨10.1103/PhysRevB.73.205423⟩
Article dans une revue
hal-00127843v1
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Confinement effects in PbSe quantum wells and nanocrystalsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70, pp.245321/1-9. ⟨10.1103/PhysRevB.70.245321⟩
Article dans une revue
hal-00141253v1
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Evolution of the density of states from a two- to a zero-dimensional semiconductorEPL - Europhysics Letters, 2004, 65, pp.809-815. ⟨10.1209/epl/i2003-10130-3⟩
Article dans une revue
istex
hal-00141246v1
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Ab-initio calculation of the phonon dispersion relations of lead chalcogenides14th International Workshop on Computational Physics and Materials Science : Total Energy and Force Methods, 2009, Trieste, Italy
Communication dans un congrès
hal-00575360v1
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Impact ionization quantum yield in PbSe nanocrystalsMaterials Research Society 2005 Fall Meeting, Nov 2005, Boston, MA, United States
Communication dans un congrès
hal-00126443v1
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Quasi-particle gap, dielectric properties and electronic correlations in semiconductor nanostructuresWorkshop on Theory and Modeling of Electronic Excitations in Nanoscience, NANOEXC2004, 2004, Acquafredda di Maratea, Italy
Communication dans un congrès
hal-00141287v1
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Trends in the cohesive properties of sp bonded elementsJournal de Physique, 1983, 44 (12), pp.1355-1363. ⟨10.1051/jphys:0198300440120135500⟩
Article dans une revue
istex
jpa-00209723v1
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Excitonic and quasiparticle gaps on Si nanocrystalsPhysical Review Letters, 2000, 84, pp.2457-2460. ⟨10.1103/PhysRevLett.84.2457⟩
Article dans une revue
hal-00158640v1
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ULTRA-THIN SEMICONDUCTOR QUANTUM WELLS : POTENTIAL SHAPES AND STRAIN EFFECTSJournal de Physique Colloques, 1987, 48 (C5), pp.C5-203-C5-206. ⟨10.1051/jphyscol:1987541⟩
Article dans une revue
istex
jpa-00226745v1
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Quantum confinement effects in Pb nanocrystals grown on InAsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2018, 97 (21), ⟨10.1103/physrevb.97.214514⟩
Article dans une revue
hal-01921229v1
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Theory of rare-earth impurities in semiconductorsMRS Fall Meeting, Nov 1993, Boston, United States
Communication dans un congrès
hal-03316843v1
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Theory of the luminescence of porous siliconE-MRS Spring Meeting, May 1993, Strasbourg, France
Communication dans un congrès
hal-03316745v1
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Experimental and theoretical comparison of the optical properties of colloidal lead salt quantum dotsNanoscience with Nanocrystals International Conference, NaNaX4, 2010, Munich, Germany
Communication dans un congrès
hal-00574397v1
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Self-assembled molecular rectifying diodes on silicon : synthesis, experimental and theoretical charge transport studies7th European Conference on Molecular Electronics, ECME 2003, Sep 2003, Avignon, France
Communication dans un congrès
hal-00146179v1
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Theoretical characterization of the electronic properties of extended thienylenevinylene oligomersJournal of Chemical Physics, 1999, 111 (14), pp.6643-6649. ⟨10.1063/1.480012⟩
Article dans une revue
hal-00633591v1
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Near-thresholdless optical gain using colloidal HgTe quantum dots30 years of Colloidal Quantum Dots, 2014, Paris, France
Communication dans un congrès
hal-01015227v1
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From semiconductor nanocrystals to artificial graphene and topological insulatorEuropean Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium F - Established and emerging nanocolloids : from synthesis & characterization to applications, 2014, Lille, France
Communication dans un congrès
hal-00966143v1
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Electron-phonon coupling and optical transitions for indirect-gap semiconductor nanocrystalsPhysical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.193402/1-4. ⟨10.1103/PhysRevB.64.193402⟩
Article dans une revue
hal-00152538v1
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Assessment of carrier-multiplication efficiency in bulk PbSe and PbSNature Physics, 2009, 5, pp.811-814. ⟨10.1038/nphys1393⟩
Article dans une revue
hal-00473076v1
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Theory of the optical absorption and of the magnetic circular dichroïsm of antisite related defects in GaAs16th International Conference on Defects in Semiconductors, Lehigh University, 1991, Lehigh, United States
Communication dans un congrès
hal-03316739v1
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Theory of silicon crystallitesPhysics of the luminescence of porous silicon, 1994, Les Houches, France
Communication dans un congrès
hal-03316846v1
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Theoretical descriptions of porous siliconE-MRS Strasbourg, 1994, Strasbourg, France
Communication dans un congrès
hal-03316848v1
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Theory of the physical properties of Si nanocrystalsMRS Boston, 1994, Boston, United States
Communication dans un congrès
hal-03316852v1
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Defects in NanostructuresInternational Conference on Defects in Semiconductors, Jul 1999, Berkeley, United States
Communication dans un congrès
hal-03316949v1
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Relaxations non radiatives dans les nanocristaux de semiconducteursJournées de la Matière Condensée, SFP, Jul 2008, Strasbourg, France
Communication dans un congrès
hal-03317055v1
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Relaxation of hot carriers in Si nanocrystalsE-MRS 2010 Spring Meeting Symposium J : Silicon-based nanophotonics, Jun 2010, Strasbourg, France
Communication dans un congrès
hal-03317057v1
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