Filtrer vos résultats
- 27
- 13
- 23
- 11
- 2
- 2
- 1
- 1
- 37
- 3
- 2
- 2
- 1
- 3
- 4
- 2
- 5
- 3
- 4
- 3
- 3
- 4
- 2
- 2
- 3
- 1
- 39
- 1
- 34
- 20
- 7
- 6
- 4
- 3
- 2
- 1
- 1
- 40
- 19
- 16
- 8
- 7
- 6
- 6
- 4
- 4
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 3
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 2
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
- 1
40 résultats
|
|
triés par
|
High speed and high-area efficiency non-volatile look-up table design based on magnetic tunnel junction2017 17th Non-Volatile Memory Technology Symposium (NVMTS), Aug 2017, Aachen, Germany. ⟨10.1109/NVMTS.2017.8171280⟩
Communication dans un congrès
hal-01864492v1
|
|||
|
Heavy-ion irradiation effects on advanced perpendicular anisotropy spin-transfer torque magnetic tunnel junctionIEEE Transactions on Nuclear Science, 2021, 68 (5), pp.588-596. ⟨10.1109/TNS.2021.3071257⟩
Article dans une revue
hal-03255402v1
|
||
|
Beyond STT-MRAM, Spin Orbit Torque RAM SOT-MRAM for high speed and high reliability applicationsWeisheng Zhao; Guillaume Prenat. Spintronics-based Computing, Springer International Publishing, pp.145-157, 2015, 978-3-319-34661-8. ⟨10.1007/978-3-319-15180-9_4⟩
Chapitre d'ouvrage
hal-01976635v1
|
||
Cellule mémoire volatile/non-volatileFrance, N° de brevet: FR1150402A. 2011
Brevet
lirmm-00861516v1
|
|||
|
SEU mechanisms in spintronic devices: Critical parameters and basic effectsIEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1533-1541. ⟨10.1109/TNS.2021.3080080⟩
Article dans une revue
hal-03252884v1
|
||
|
Spin orbit torque non-volatile flip-flop for high speed and low energy applicationsIEEE Electron Device Letters, 2014, 35 (3), pp.408 - 410. ⟨10.1109/led.2013.2297397⟩
Article dans une revue
hal-03506992v1
|
||
Multi Bit Upset detection and correction based on self-robust Non-Volatile C-elementIEDM: International Electron Devices Meeting, Dec 2018, San Francisco, United States. IEEE International Electron Devices Meeting, 2018
Poster de conférence
hal-01982795v1
|
|||
|
Self-Robust Non-Volatile C-element for Single Event Upset Enhanced ToleranceJNRDM 2019 - 21es Journées Nationales du Réseau Doctoral en Micro-nanoélectronique, Jun 2019, Montpellier, France
Communication dans un congrès
lirmm-02366116v1
|
||
|
Ultra-fast and high-reliability SOT-MRAM: from cache replacement to normally-off computingIEEE Transactions on Multi-Scale Computing Systems, 2016, 2 (1), pp.49 - 60. ⟨10.1109/TMSCS.2015.2509963⟩
Article dans une revue
hal-01864485v1
|
||
|
High density SOT-MRAM memory array based on a single transistorNon-Volatile Memory Technology Symposium (NVMTS), Oct 2018, Sendai, Japan. ⟨10.1109/NVMTS.2018.8603114⟩
Communication dans un congrès
hal-01982792v1
|
||
|
MemCork: Exploration of Hybrid Memory Architectures for Intermittent Computing at the EdgeVLSI-SoC 2022 - 30th IFIP/IEEE International Conference on Very Large Scale Integration, Oct 2022, Patras, Greece. pp.1-6, ⟨10.1109/VLSI-SoC54400.2022.9939630⟩
Communication dans un congrès
hal-03810018v1
|
||
|
A universal spintronic technology based on Multifunctional Standardized StackDATE 2020 - 23rd Design, Automation and Test in Europe Conference and Exhibition, Mar 2020, Grenoble, France. pp.394-399, ⟨10.23919/DATE48585.2020.9116321⟩
Communication dans un congrès
hal-03753403v1
|
||
MRAM: from STT to SOT, for security and memoryXXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), Nov 2018, Lyon, France
Communication dans un congrès
hal-01982788v1
|
|||
Infrastructures for education, research and industry: CMOS and MEMS for BioMed12th World Multi-Conference on Systemics, Cybernetics and Informatics (WMSCI'08), 2008, Orlando, United States
Communication dans un congrès
hal-00354286v1
|
|||
|
Light-Weight Cipher Based on Hybrid CMOS/STT-MRAM: Power/Area Analysis2019 IEEE International Symposium on Circuits and Systems (ISCAS), May 2019, Sapporo, Japan. pp.1-5, ⟨10.1109/ISCAS.2019.8702734⟩
Communication dans un congrès
hal-03753425v1
|
||
On Using Cell-Aware Methodology for SRAM Bit Cell TestingETS 2023 - 28th IEEE European Test Symposium, May 2023, Venezia, Italy. pp.1-4, ⟨10.1109/ETS56758.2023.10174118⟩
Communication dans un congrès
hal-04164704v1
|
|||
|
On Using Cell-Aware Models for Representing SRAM Architecture16e Colloque National du GDR SoC², Jun 2022, Strasbourg, France
Communication dans un congrès
lirmm-03987914v1
|
||
|
Proton irradiation effects on spin orbit-torque and spin transfer-torque magnetic tunnel junctionsRADECS 2021 - 21st European Conference on Radiation and its Effects on Components and Systems, Sep 2021, Vienna, Austria. pp.1-5, ⟨10.1109/RADECS53308.2021.9954501⟩
Communication dans un congrès
hal-03330147v1
|
||
|
Self-robust Non-Volatile C-element for single event upset enhanced toleranceRADECS 2019 - 19th European Conference on Radiation and Its Effects on Components and Systems, Sep 2019, Montpellier, France
Communication dans un congrès
lirmm-02957093v1
|
||
|
Spin-Transfer Torque Magnetic Tunnel Junction for Single-Event Effects Mitigation in IC DesignIEEE Transactions on Nuclear Science, 2020, 67 (7), pp.1674-1681. ⟨10.1109/TNS.2020.3002649⟩
Article dans une revue
lirmm-02957089v1
|
||
|
Study of spin transfer torque (STT) and spin orbit torque (SOT) magnetic tunnel junctions (MTJs) at advanced CMOS technology nodesElectrical and Electronics Engineering: An International Journal (ELELIJ), 2017, 6 (1), pp.1. ⟨10.14810/elelij.2017.6101⟩
Article dans une revue
hal-01977185v1
|
||
|
Radiative Effects on MRAM-Based Non-Volatile Elementary StructuresISVLSI: International Symposium on Very Large Scale Integration, Jul 2015, Montpellier, France. pp.321-326, ⟨10.1109/ISVLSI.2015.71⟩
Communication dans un congrès
lirmm-01250733v1
|
||
|
GREAT: HeteroGeneous IntegRated Magnetic tEchnology Using Multifunctional Standardized sTackISVLSI 2017 - International Symposium on Very Large Scale Integration, Jul 2017, Bochum, Germany. pp.344-349, ⟨10.1109/ISVLSI.2017.67⟩
Communication dans un congrès
lirmm-01708599v1
|
||
Infrastructures for education, research and industry in microelectronics Developments at CMP and worldwide cooperation10th International Symposium on Integrated Circuits, Devices & Systems (ISIC'04), Integrated Systems on Silicon Suntec, Singapore, 8-10 September, Sep 2004, Singapore, Singapore
Communication dans un congrès
hal-00346688v1
|
|||
Electronics manufacturing infrastructures for education and commercialization30th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBS'08), Aug 2008, Vancouver, Canada. pp.1571-1574
Communication dans un congrès
hal-00346534v1
|
|||
|
Infrastructures for Education and Research: from National Initiatives to global operationsThe 13th World Multi-Conference on Systemics, Cybernetics and Informatics: WMSCI 2009, Jul 2009, Orlando, Florida, United States
Communication dans un congrès
hal-00395358v1
|
||
Volatile/non-volatile memory cellUnited States, Patent n° : US20140070844 A1. 2014
Brevet
lirmm-01688089v1
|
|||
Reducing System Power Consumption Using Check-Pointing on Nonvolatile Embedded Magnetic Random Access MemoriesACM Journal on Emerging Technologies in Computing Systems, 2016, 12 (4), pp.1-24. ⟨10.1145/2876507⟩
Article dans une revue
hal-01835848v1
|
|||
|
Non Volatile MRAM-based Asynchronous PROCessor2021
Autre publication scientifique
lirmm-03179090v1
|
||
|
From spintronic devices to hybrid CMOS/magnetic system on chipIFIP International Conference on Very Large Scale Integration (VLSI-SoC 2018), Oct 2018, Verona, Italy. pp.188-191, ⟨10.1109/VLSI-SoC.2018.8644875⟩
Communication dans un congrès
hal-01982791v1
|
- 1
- 2