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302 résultats
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Comment réaliser des TEC AsGa de transconductance supérieure à 700 mS/mm et à fréquence de coupure élevéeRevue de Physique Appliquée, 1989, 24 (1), pp.51-56. ⟨10.1051/rphysap:0198900240105100⟩
Article dans une revue
istex
jpa-00246028v1
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ON THE MICROWAVE LOW TEMPERATURE ANALYSIS BEHAVIOUR OF HEMTsJournal de Physique Colloques, 1988, 49 (C4), pp.C4-709-C4-712. ⟨10.1051/jphyscol:19884149⟩
Article dans une revue
istex
jpa-00227887v1
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Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391
Communication dans un congrès
hal-00922492v1
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Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, 2009, Warsaw, Poland
Communication dans un congrès
hal-00575696v1
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Non-linear modeling of the kink effect in deep sub-micron SOI MOSFET2004, pp.47-50
Communication dans un congrès
hal-00133900v1
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Small signal and noise equivalent circuit for CMOS 65 nm up to 110 GHz38th European Microwave Conference, EuMC 2008, 2008, Netherlands. pp.321-324, ⟨10.1109/EUMC.2008.4751453⟩
Communication dans un congrès
hal-00362371v1
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High frequency low noise potentialities of down to 65nm technology nodes MOSFETsEuropean Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2005, Oct 2005, Paris, France. pp.97-100
Communication dans un congrès
hal-00125303v1
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Microscopic noise modeling and macroscopic noise models: how good a connection? [FETs]IEEE Transactions on Electron Devices, 1994, 41 (5), pp.779-786. ⟨10.1109/16.285031⟩
Article dans une revue
hal-03612979v1
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A 40 GHz superheterodyne receiver integrated in 0.13 µm BiCMOS SiGe:C HBT technology2005, pp.10-13
Communication dans un congrès
hal-00125902v1
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High frequency noise sources extraction in nanometrique MOSFETsNATO Advanced Research Workshop, Advanced Experimental Methods for Noise Research in Nanoscale Electronic Devices, 2003, Brno, Czech Republic
Communication dans un congrès
hal-00146038v1
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RF small signal analysis of Schottky-barrier p-MOSFETsIEEE Transactions on Electron Devices, 2008, 55, pp.1192-1202. ⟨10.1109/TED.2008.919382⟩
Article dans une revue
hal-00356664v1
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High-voltage HBTs compatible with high-speed SiGe BiCMOS technology8th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2008, 2008, United States. pp.210-213, ⟨10.1109/SMIC.2008.59⟩
Communication dans un congrès
hal-00360406v1
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Microwave measurements of nanotube based-devicesIMS Workshop on Nanoelectronic Devices : RF Characterization, Modeling, and Applications, 2007, Honolulu, HI, United States
Communication dans un congrès
hal-00286242v1
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Conception de dispositifs passifs planaires en bande WGDR Ondes, 2003, Marseille, France
Communication dans un congrès
hal-00250174v1
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Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect TransistorsIEEE Transactions on Microwave Theory and Techniques, 2008, 56 (7), pp.1505-1510. ⟨10.1109/TMTT.2008.925209⟩
Article dans une revue
hal-00315911v1
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Non linear microwave characterization and modelization of carbon nanotube FETsWorkshop on Compound Semiconductor Materials and Devices, WOCSEMMAD'07, 2007, Savannah, GA, United States
Communication dans un congrès
hal-00285315v1
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DC and RF performance of 0.2-2.4 µm gate length InAs/AlSb HEMTs19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.67-70, ⟨10.1109/ICIPRM.2007.381124⟩
Communication dans un congrès
hal-00284022v1
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Caractérisation et modélisation non linéaire de Transistors hyperfréquences à Effet de Champ à base de Nano tubes de Carbone (CNFETs) à l'aide d'un Analyseur de réseau Large Signal (LSNA)XVIèmes Journées Nationales Microondes, May 2007, Toulouse, France. pp.xx-xx
Communication dans un congrès
hal-00197497v1
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Interferometric Near-field Microwave Microscopy Platform for Electromagnetic Micro-analysisProcedia Engineering, 2014, EUROSENSORS 2014, the 28th European Conference on Solid-State Transducers, 87, pp.388-391. ⟨10.1016/j.proeng.2014.11.733⟩
Article dans une revue
hal-02345634v1
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Nano-probing station incorporating MEMS probes for 1D device RF on-wafer characterization2017 47th European Microwave Conference (EuMC), Oct 2017, Nuremberg, Germany. ⟨10.23919/EuMC.2017.8230973⟩
Communication dans un congrès
hal-01726555v1
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Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabricationIEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702971⟩
Communication dans un congrès
hal-00360403v1
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Operation of near-field scanning millimeter-wave microscopy up to 67 GHz under scanning electron microscopy visionIEEE MTT International Microwave Symposium, IMS 2020, Jun 2020, Los Angeles (On-line event), United States. pp.95-98, ⟨10.1109/IMS30576.2020.9224090⟩
Communication dans un congrès
hal-03022574v1
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High frequency and noise performance of GFETs24th International Conference on Noise and Fluctuations, ICNF 2017, Jul 2017, Vilnius, Lithuania. paper B4.1, 5 p
Communication dans un congrès
hal-01639676v1
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Influence of temperature on high frequency performance of graphene nano ribbon field effect68th Device Research Conference, DRC 2010, 2010, United States. pp.69-70, ⟨10.1109/DRC.2010.5551934⟩
Communication dans un congrès
hal-00549925v1
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Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates : application to X-band low noise amplifiers2005, pp.229-232
Communication dans un congrès
hal-00126458v1
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HEMTs for millimeter and sub-millimeter waves applicationsGDR THz, 2005, Montpellier, France
Communication dans un congrès
hal-00125314v1
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Tuner intégré sur silicium pour l'extraction des paramètres de bruit sous pointes en bande millimétrique (60~110GHz) pour les technologies SiGeC HBT et MOSFET16èmes Journées Nationales Microondes, JNM 2009, 2009, France. pp.5E-11, 1-4
Communication dans un congrès
hal-00480322v1
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Transmission lines on low resistivity silicon substrate for MMICs applications2001, pp.193-196
Communication dans un congrès
hal-00151781v1
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Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applicationsIEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.2685-2691. ⟨10.1109/TMTT.2008.2006798⟩
Article dans une revue
hal-00376223v1
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Top gated graphene : quantum capacitance effects and microwave propertiesJournées de la matière condensée de la société française de physique, JMC12., Aug 2010, Troyes, France
Communication dans un congrès
hal-00519810v1
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