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Gerard Ghibaudo

Gérard Ghibaudo, Fellow IEEE 2013-2022, was born in France in 1954. He graduated from Grenoble Institute of Technology in 1979 and obtained the PhD degree in Electronics in 1981, the State Thesis degree in Physics in 1984 and the PhD supervision habilitation diploma in 1986 from Grenoble University. He was CNRS PhD student from 1979 to 1981 and became associate researcher at CNRS in 1981 in LPCS laboratory (Grenoble). He was finally promoted Director of Research at CNRS in 1992 (exceptional class in 2014). He was Director of IMEP-LAHC Laboratory located at MINATEC-INPG center from 2007 to 2013. During the academic year 1987-1988, he spent a sabbatical year at Naval Research Laboratory in Washington, DC (USA) where he worked on the characterization of MOSFETs. His main research activities were in the field of electronics transport, oxidation of silicon, MOS device physics, fluctuations and low frequency noise and dielectric reliability. He participated to over 20 European projects and was responsible for over 50 research contracts. Dr. G. Ghibaudo has supervised over 125 PhD students in his career. He was co-founder of the First European Workshop on Low Temperature Electronics (WOLTE 94) and organizer of 20 Workshops/Summer School during the last 40 years. Dr. G. Ghibaudo was member of the Editorial board of Solid State Electronics and served as associate editor of Microelectronics reliability journal and Journal of Active and Passive Electronic Component. During his career he authored over 596 articles in International Refereed Journals and 762 communications in International Conferences. He participated to 86 invited papers in International Conferences and he wrote 34 book chapters. Dr. G. Ghibaudo featured over 952 items and 13.945 citations in Web of Science where he had an H index of 48. G. Ghibaudo is ranking 14% world top researcher among Elsevier Standford 100,000 top-scientists.
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Documents

Publications

New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs

R. Kom Kammeugne , C. Theodorou , C. Leroux , L. Vauche , X. Mescot
Solid-State Electronics, 2023, 200, pp.108555. ⟨10.1016/j.sse.2022.108555⟩
Article dans une revue hal-03897338v1

On the Fluctuation–Dissipation of the Oxide Trapped Charge in a MOSFET Operated Down to Deep Cryogenic Temperatures

G. Ghibaudo
Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩
Article dans une revue hal-04264285v1

Numerical Simulation of Electro-Thermal Properties in FDSOI MOSFETs Down to Deep Cryogenic Temperatures

Gérard Ghibaudo
Journal of Electrical and Electronic Engineering, 2023
Article dans une revue hal-04126208v1

Cryogenic MOSFET Subthreshold Current: From Resistive Networks to Percolation Transport in 1-D Systems

E. Catapano , M. Cassé , G. Ghibaudo
IEEE Transactions on Electron Devices, 2023, pp.1-6. ⟨10.1109/TED.2023.3283941⟩
Article dans une revue hal-04134155v1
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On-wafer drain current aariability in GaN MIS-HEMT on 200-mm silicon substrates

Romeo Kom Kammeugne , Charles Leroux , Christoforos Theodorou , Laura Vauche , Matthew Charles
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.12-23. ⟨10.37256/jeee.2120232132⟩
Article dans une revue hal-04305208v1

On the fluctuation-dissipation of the oxide trapped charge in a MOSFET operated down to deep cryogenic temperatures

Gérard Ghibaudo
Fluctuation and Noise Letters, 2023, ⟨10.1142/S0219477523500451⟩
Article dans une revue hal-04126191v1
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Numerical simulation of electro-thermal properties in FDSOI MOSFETs down to deep cryogenic temperatures

Gérard Ghibaudo , Francis Balestra
Journal of Electronics and Electrical Engineering, 2023, 2 (1), pp.2498. ⟨10.37256/jeee.2120232498⟩
Article dans une revue hal-04246042v1
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Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

Francesco Serra Di Santa Maria , Lauriane Contamin , Mikaël Cassé , Christoforos Theodorou , Francis Balestra
Solid-State Electronics, 2022, 192, pp.108271. ⟨10.1016/j.sse.2022.108271⟩
Article dans une revue hal-04246049v1
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Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions

Gérard Ghibaudo , M. Cassé , F. Serra Di Santa Maria , C. Theodorou , Francis Balestra
Solid-State Electronics, 2022, ⟨10.1016/j.sse.2022.108265⟩
Article dans une revue hal-03852787v1
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Model Implementation of Lorentzian Spectra for Circuit Noise Simulations in the Frequency Domain

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Journal of the Electron Devices Society, 2022, 10, pp.611-619. ⟨10.1109/JEDS.2022.3178352⟩
Article dans une revue hal-03762363v1
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Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3037-3041. ⟨10.1109/TED.2022.3172056⟩
Article dans une revue hal-03697387v1
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Impact of channel length on the operation of junctionless transistors with substrate biasing

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (6), pp.3070-3073. ⟨10.1109/TED.2021.3069936⟩
Article dans une revue hal-03194757v1

Intrinsic Mechanism of Mobility Collapse in Short MOSFETs

Sorin Cristoloveanu , Gerard Ghibaudo
IEEE Transactions on Electron Devices, 2021, 68 (10), pp.5090-5094. ⟨10.1109/TED.2021.3105083⟩
Article dans une revue hal-03353319v1

Statistical and electrical modeling of FDSOI four-gate qubit MOS devices at room temperature

Edoardo Catapano , Gerard Ghibaudo , Mikael Casse , Tadeu Mota Frutuoso , Bruna Cardoso Paz
IEEE Journal of the Electron Devices Society, 2021, 9, pp.582-590. ⟨10.1109/JEDS.2021.3082201⟩
Article dans une revue hal-03455220v1

Impact of Hot Carrier Aging on the 1/f and Random Telegraph Noise of Short-Channel Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud
IEEE Transactions on Device and Materials Reliability, 2021, 21 (3), pp.348-353. ⟨10.1109/TDMR.2021.3094510⟩
Article dans une revue hal-03334750v1
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Lambert-W Function-based Parameter Extraction for FDSOI MOSFETs Down to Deep Cryogenic Temperatures

F. Serra Di Santa Maria , L. Contamin , B. Cardoso Paz , M. Cassé , Christoforos Theodorou
Solid-State Electronics, 2021, 186, pp.108175. ⟨10.1016/j.sse.2021.108175⟩
Article dans une revue hal-03368225v1
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New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

Benjamin Iniguez , Arokia Nathan , Alexander Kloes , Yvan Bonnassieux , Krunoslav Romanjek
IEEE Journal of the Electron Devices Society, 2021, 9, pp.911-932. ⟨10.1109/JEDS.2021.3106836⟩
Article dans une revue hal-03325532v1

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

R. Kom Kammeugne , C. Leroux , J. Cluzel , L. Vauche , C. Le Royer
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4649-4653. ⟨10.1109/TED.2020.3015466⟩
Article dans une revue cea-02972351v1
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A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩
Article dans une revue hal-03260917v1
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Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Andreas Tsormpatzoglou , Sylvain Barraud
IEEE Transactions on Electron Devices, 2020, 67 (2), pp.424-429. ⟨10.1109/TED.2019.2958457⟩
Article dans une revue hal-02461975v1

Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K

L. Le Guevel , G. Billiot , Bruna Cardoso Paz , M. Tagliaferri , Silvano de Franceschi
Applied Physics Letters, 2020, 116 (24), pp.243502. ⟨10.1063/5.0007100⟩
Article dans une revue hal-03541768v1
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On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature

Gérard Ghibaudo , Mohamed Aouad , Mikaël Cassé , Sebastien Martinie , Francis Balestra
Solid-State Electronics, 2020, ⟨10.1016/j.sse.2020.107820⟩
Article dans une revue hal-03368147v1
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Channel width dependent subthreshold operation of tri-gate junctionless transistors

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
Solid-State Electronics, 2020, 171, pp.107860. ⟨10.1016/j.sse.2020.107860⟩
Article dans une revue hal-02922783v1
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Effects of Contact Potential and Sidewall Surface Plane on the Performance of GaN Vertical Nanowire MOSFETs for Low-Voltage Operation

Dong-Hyeok Son , Terirama Thingujam , Jeong-Gil Kim , Dae-Hyun Kim , In Man Kang
IEEE Transactions on Electron Devices, 2020, 67 (4), pp.1547-1552. ⟨10.1109/TED.2020.2975599⟩
Article dans une revue hal-02969751v1
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Precise Extraction of Charge Carrier Mobility for Organic Transistors

Yong Xu , Yun Li , Songlin Li , Francis Balestra , Gérard Ghibaudo
Advanced Functional Materials, 2020, Emerging Thin‐Film Transistor Technologies and Applications, 30 (20), pp.1904508. ⟨10.1002/adfm.201904508⟩
Article dans une revue hal-02998279v1

A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency

Melissa Arabi , Xavier Garros , Jacques Cluzel , Mustapha Rafik , Xavier Federspiel
IEEE Electron Device Letters, 2020, 41 (10), pp.1460-1463. ⟨10.1109/LED.2020.3016383⟩
Article dans une revue hal-02961016v1

Drain current local variability analysis in nanoscale junctionless FinFETs utilizing a compact model

T.A. Oproglidis , D.H. Tassis , A. Tsormpatzoglou , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2020, 170, pp.107835. ⟨10.1016/j.sse.2020.107835⟩
Article dans une revue hal-02991445v1

Parameter Extraction and Compact Modeling of OTFTs From 150 K to 350 K

Harold Cortes-Ordonez , C. Haddad , Xavier Mescot , Krunoslav Romanjek , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2020, pp.1-8. ⟨10.1109/TED.2020.3032082⟩
Article dans une revue hal-02991438v1
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Improvement of AlN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing

Maxime Legallais , Hussein Mehdi , Sylvain David , Franck Bassani , Sébastien Labau
ACS Applied Materials & Interfaces, 2020, 12 (35), pp.39870-39880. ⟨10.1021/acsami.0c10515⟩
Article dans une revue hal-03030507v1

A2RAM compact modeling: From DC to 1T-DRAM memory operation

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
Solid-State Electronics, 2020, 168, pp.107731. ⟨10.1016/j.sse.2019.107731⟩
Article dans une revue hal-02991446v1
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Controlling the effective channel thickness of junctionless transistors by substrate bias

Dae-Young Jeon , Mireille Mouis , Sylvain Barraud , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4736 - 4740. ⟨10.1109/TED.2020.3020284⟩
Article dans une revue hal-02963340v1
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(Invited) Second Harmonic Generation: A Powerful Non-Destructive Characterization Technique for Dielectric-on-Semiconductor Interfaces

Irina Ionica , Dimitrios Damianos , Anne Kaminski-Cachopo , Danièle Blanc-Pelissier , Gérard Ghibaudo
ECS Transactions, 2020, 97 (1), pp.119-130. ⟨10.1149/09701.0119ecst⟩
Article dans une revue hal-02861584v1

Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance

M. Casse , B. Cardoso Paz , G. Ghibaudo , T. Poiroux , S. Barraud
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4636-4640. ⟨10.1109/TED.2020.3022607⟩
Article dans une revue hal-02991460v1

Modelling and analysis of gate leakage current and its wafer level variability in advanced FD-SOI MOSFETs

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gérard Ghibaudo
Solid-State Electronics, 2020, 163, pp.107643. ⟨10.1016/j.sse.2019.107643⟩
Article dans une revue hal-02321948v1
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Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Bruna Cardoso Paz , Mikaël Cassé , Christoforos Theodorou , Gérard Ghibaudo , Thorsten Kammler
IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4563-4567. ⟨10.1109/TED.2020.3021999⟩
Article dans une revue hal-02969741v1
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Analysis of the Role of Inter-Nanowire Junctions on Current Percolation Effects in Silicon Nanonet Field-Effect Transistors

T. Cazimajou , M. Mouis , M. Legallais , T.T.T. Nguyen , C. Ternon
Solid-State Electronics, 2020, pp.107725. ⟨10.1016/j.sse.2019.107725⟩
Article dans une revue hal-02380107v1

1/ f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Wondwosen Muhea , K. Romanjek , X. Mescot , C. Theodorou , M. Charbonneau
Applied Physics Letters, 2019, 114 (24), pp.243301. ⟨10.1063/1.5093266⟩
Article dans une revue hal-02161717v1

Analysis and Compact Modeling of Gate Capacitance in Organic Thin-Film Transistors

H. Cortes-Ordonez , S. Jacob , F. Mohamed , G. Ghibaudo , B. Iñiguez
IEEE Transactions on Electron Devices, 2019, pp.1-5. ⟨10.1109/TED.2019.2906827⟩
Article dans une revue hal-02113591v1

Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

T. Oproglidis , A. Tsormpatzoglou , C. Theodorou , T. Karatsori , G. Ghibaudo
IEEE Transactions on Electron Devices, 2019, 66 (10), pp.4486-4489. ⟨10.1109/TED.2019.2937159⟩
Article dans une revue hal-02321988v1

Endurance Statistical Behavior of Resistive Memories Based on Experimental and Theoretical Investigation

Diego Alfaro Robayo , Gilbert Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2911661⟩
Article dans une revue hal-02126884v1

New Insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen
IEEE Transactions on Device and Materials Reliability, 2019, pp.1-1. ⟨10.1109/TDMR.2019.2914362⟩
Article dans une revue hal-02118352v1

Charge Pumping in Ultrathin SOI Tunnel FETs: Impact of Back-Gate Voltage

Carlos Diaz Llorente , Christoforos Theodorou , Jean-Pierre Colinge , Sorin Cristoloveanu , Sébastien Martinie
ECS Transactions, 2019, 89 (3), pp.111-120. ⟨10.1149/08903.0111ecst⟩
Article dans une revue hal-02415983v1

Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K

K. Triantopoulos , M. Cassé , S. Barraud , S. Haendler , E. Vincent
IEEE Transactions on Electron Devices, 2019, pp.1-8. ⟨10.1109/TED.2019.2919924⟩
Article dans une revue hal-02161716v1
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Novel On-Resistance based Methodology for MOSFET Electrical Characterization

T.A. Karatsori , K. Bennamane , Gérard Ghibaudo
Solid-State Electronics, 2019, pp.107722. ⟨10.1016/j.sse.2019.107722⟩
Article dans une revue hal-02379974v1

Impact of contact and channel resistance on the frequency-dependent capacitance and conductance of pseudo-MOSFET

S. Sato , G. Ghibaudo , L. Benea , I. Ionica , Y. Omura
Solid-State Electronics, 2019, 159, pp.197-203. ⟨10.1016/j.sse.2019.03.059⟩
Article dans une revue hal-02321909v1

Analysis of the Electrical Properties of Different HgCdTe Passivations for Infrared Detectors

L. Mangin , F. Rochette , C. Lobre , P. Ballet , P. Duvaut
Journal of Electronic Materials, 2019, ⟨10.1007/s11664-019-07253-z⟩
Article dans une revue hal-02136323v1
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Reliable Mobility Evaluation of Organic Field-Effect Transistors with Different Contact Metals

Fanming Huang , Ao Liu , Huihui Zhu , Yong Xu , Francis Balestra
IEEE Electron Device Letters, 2019, 40 (4), pp.605 - 608. ⟨10.1109/LED.2019.2901315⟩
Article dans une revue hal-02050199v1

New Concept of Differential Effective Mobility in MOS Transistors

K. Bennamane , G. Ghibaudo
Active and Passive Electronic Components, 2019, 2019, pp.5716230. ⟨10.1155/2019/5716230⟩
Article dans une revue hal-02059162v1

On the cumulative distribution function of the defect centric model for BTI reliability

D. Nouguier , G. Pananakakis , X. Federspiel , M. Rafik , D. Roy
Microelectronics Reliability, 2019, 92, pp.168-171. ⟨10.1016/j.microrel.2018.12.003⟩
Article dans une revue hal-01953979v1

New perspectives in defect centric model for NBTI reliability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy
Microelectronics Reliability, 2019, 98, pp.119-123. ⟨10.1016/j.microrel.2019.05.010⟩
Article dans une revue hal-02136328v1

Low-Frequency Noise Characteristics of GaN Nanowire Gate-All-Around Transistors With/Without 2-DEG Channel

Ki-Sik Im , M. Siva Pratap Reddy , Raphaël Caulmilone , Christoforos Theodorou , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2019, 66 (3), pp.1243 - 1248. ⟨10.1109/TED.2019.2894806⟩
Article dans une revue hal-02047570v1

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy

Matej Pastorek , Aurélien Olivier , Yoann Lechaux , Nicolas Wichmann , Theano Karatsori
Nanotechnology, 2019, 30 (3), pp.035301. ⟨10.1088/1361-6528/aaebbd⟩
Article dans une revue hal-01955057v1

Electrical characterization of advanced FDSOI CMOS devices

Gérard Ghibaudo
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2018.0304⟩
Article dans une revue hal-02010907v1
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New prospects on high on-current and steep subthreshold slope for innovative Tunnel FET architectures

C. Diaz Llorente , J.-P. Colinge , S. Martinie , S. Cristoloveanu , J. Wan
Solid-State Electronics, 2019, 159, pp.26-37. ⟨10.1016/j.sse.2019.03.046⟩
Article dans une revue hal-02321885v1
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Doping profile extraction in thin SOI films: Application to A2RAM

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
Solid-State Electronics, 2019, 159, pp.3-11. ⟨10.1016/j.sse.2019.03.038⟩
Article dans une revue hal-02321935v1
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Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

I. Nifa , C. Leroux , A. Torrès , M. Charles , G. Reimbold
Microelectronic Engineering, 2019, 215, pp.110976. ⟨10.1016/j.mee.2019.05.003⟩
Article dans une revue hal-02145457v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

G. Ghibaudo , G. Pananakakis
Composants nanoélectroniques, 2019, 2 (1), ⟨10.21494/ISTE.OP.2019.0347⟩
Article dans une revue hal-02067076v1

Temperature dependence of TDDB at high frequency in 28FDSOI

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A.-P. Nguyen
Microelectronics Reliability, 2019, 100-101, pp.113422. ⟨10.1016/j.microrel.2019.113422⟩
Article dans une revue hal-02361447v1

Impact of CMOS TiN metal gate process on microstructure and its correlation with electrical properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , G. Ghibaudo
MRS Advances, 2019, pp.1-7. ⟨10.1557/adv.2019.77⟩
Article dans une revue hal-02051062v1

Impact of Wet Treatments on the Electrical Performance of Ge 0.9 Sn 0.1 -Based p-MOS Capacitors

Mohamed Aymen Mahjoub , Thibault Haffner , Sébastien Labau , Etienne Eustache , Joris Aubin
ACS Applied Electronic Materials, 2019, 1 (2), pp.260-268. ⟨10.1021/acsaelm.8b00099⟩
Article dans une revue hal-02051071v1

Lambert W-function based modelling of P-OTFTs and application to low temperature measurements

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Amélie Revaux , Gérard Ghibaudo
Organic Electronics, 2018, 62, pp.610-614. ⟨10.1016/j.orgel.2018.06.037⟩
Article dans une revue hal-01948062v1

Series resistance in different operation regime of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2018, 141, pp.92-95. ⟨10.1016/j.sse.2017.12.013⟩
Article dans une revue hal-01948025v1

A Simple Method for Estimation of Silicon Film Thickness in Tri-Gate Junctionless Transistors

Dae-Young Jeon , So Jeong Park , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
IEEE Electron Device Letters, 2018, 39 (9), pp.1282-1285. ⟨10.1109/LED.2018.2857623⟩
Article dans une revue hal-01948046v1

Determination of well flat band condition in thin film FDSOI transistors using C-V measurement for accurate parameter extraction

B. Mohamad , C. Leroux , G. Reimbold , G. Ghibaudo
Solid-State Electronics, 2018, 139, pp.88-93. ⟨10.1016/j.sse.2017.10.038⟩
Article dans une revue hal-01948022v1

Compact modeling of nanoscale triple-gate junctionless transistors covering drift-diffusion to quasi-ballistic carrier transport

T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2018, 142, pp.25-30. ⟨10.1016/j.sse.2018.01.005⟩
Article dans une revue hal-01948027v1

Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget
Solid-State Electronics, 2018, 145, pp.19-28. ⟨10.1016/j.sse.2018.04.001⟩
Article dans une revue hal-01948041v1

Effect of Temperature on the Performance of Triple-Gate Junctionless Transistors

Theodoros Oproglidis , Theano Karatsori , Sylvain Barraud , Gérard Ghibaudo , Charalabos Dimitriadis
IEEE Transactions on Electron Devices, 2018, 65 (8), pp.3562-3566. ⟨10.1109/TED.2018.2839196⟩
Article dans une revue hal-01948044v1

Electrical characteristics of silicon percolating nanonet-based field effect transistors in the presence of dispersion

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem
Solid-State Electronics, 2018, 143, pp.83-89. ⟨10.1016/j.sse.2017.11.013⟩
Article dans une revue hal-01948032v1

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

C. Diaz Llorente , C. Le Royer , P. Batude , C. Fenouillet-Beranger , S. Martinie
Solid-State Electronics, 2018, 144, pp.78-85. ⟨10.1016/j.sse.2018.03.006⟩
Article dans une revue hal-01948037v1

New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges

D. Nouguier , X. Federspiel , G. Ghibaudo , M. Rafik , D. Roy
Microelectronics Reliability, 2018, 87, pp.106-112. ⟨10.1016/j.microrel.2018.04.009⟩
Article dans une revue hal-01948045v1

On the Understanding of Cathode Related Trapping Effects in GaN-on-Si Schottky Diodes

Thomas Lorin , William Vandendaele , Romain Gwoziecki , Yannick Baines , Jérôme Biscarrat
IEEE Journal of the Electron Devices Society, 2018, 6, pp.956-964. ⟨10.1109/JEDS.2018.2842100⟩
Article dans une revue hal-01948024v1

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , C.G. Theodorou , A. Fadjie , Nicolas Wichmann
Solid-State Electronics, 2018, 143, pp.56-61. ⟨10.1016/j.sse.2017.12.001⟩
Article dans une revue hal-01948029v1

Origin of Low-Frequency Noise in Triple-Gate Junctionless n-MOSFETs

Theodoros Oproglidis , Theano Karatsori , Christoforos Theodorou , Dimitrios Tassis , Sylvain Barraud
IEEE Transactions on Electron Devices, 2018, 65 (12), pp.5481-5486. ⟨10.1109/TED.2018.2873838⟩
Article dans une revue hal-02002330v1

Study of forward AC stress degradation of GaN-on-Si Schottky diodes

T. Lorin , W. Vandendaele , R. Gwoziecki , C. Gillot , J. Biscarrat
Microelectronics Reliability, 2018, 88-90, pp.641-644. ⟨10.1016/j.microrel.2018.07.103⟩
Article dans une revue hal-01948047v1

Analytical expressions for subthreshold swing in FDSOI MOS structures

G. Ghibaudo , G. Pananakakis
Solid-State Electronics, 2018, 149, pp.57-61. ⟨10.1016/j.sse.2018.08.011⟩
Article dans une revue hal-01948058v1

Essential Effects on the Mobility Extraction Reliability for Organic Transistors

Yong Xu , Huabin Sun , Ao Liu , Huihui Zhu , Binhong Li
Advanced Functional Materials, 2018, 28 (42), pp.1803907. ⟨10.1002/adfm.201803907⟩
Article dans une revue hal-01948052v1
Image document

Field-effect passivation of Si by ALD-Al2O3: second harmonic generation monitoring and simulation

D Damianos , G. Vitrant , A. Kaminski-Cachopo , D. Blanc-Pélissier , G. Ghibaudo
Journal of Applied Physics, 2018, 124 (12), pp.125309. ⟨10.1063/1.5041062⟩
Article dans une revue hal-01883529v1

Physics and performance of nanoscale semiconductor devices at cryogenic temperatures

F. Balestra , G. Ghibaudo
Semiconductor Science and Technology, 2017, 32 (2), pp.023002. ⟨10.1088/1361-6641/32/2/023002⟩
Article dans une revue hal-01947988v1

Exploring the Charge Transport in Conjugated Polymers

Yong Xu , Huabin Sun , Wenwu Li , Yen-Fu Li , Francis Balestra
Advanced Materials, 2017, 29 (41), pp.1702729. ⟨10.1002/adma.201702729⟩
Article dans une revue hal-01948017v1

Impact of low thermal processes on reliability of high-k/metal gate stacks

Artemisia Tsiara , Xavier Garros , Cao-Minh Vincent Lu , Claire Fenouillet-Beranger , Gérard Ghibaudo
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2017, 35 (1), pp.01A114. ⟨10.1116/1.4973905⟩
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Chaotic Behavior of Random Telegraph Noise in Nanoscale UTBB FD-SOI MOSFETs

Dimitrios Tassis , Stavros Stavrinides , Michael Hanias , Christoforos Theodorou , Gérard Ghibaudo
IEEE Electron Device Letters, 2017, 38 (4), pp.517-520. ⟨10.1109/LED.2017.2672783⟩
Article dans une revue hal-01947995v1

Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

R. Lavieville , C. Le Royer , S. Barraud , G. Ghibaudo
Journal of Physics: Conference Series, 2017, 834, pp.012001. ⟨10.1088/1742-6596/834/1/012001⟩
Article dans une revue hal-02072781v1

A New Method for Series Resistance Extraction of Nanometer MOSFETs

Renan Trevisoli , Rodrigo Trevisoli Trevisoli , Michelly de Souza , Sylvain Barraud , Maud Vinet
IEEE Transactions on Electron Devices, 2017, 64 (7), pp.2797-2803. ⟨10.1109/TED.2017.2704928⟩
Article dans une revue hal-01948007v1

A Link between CBRAM Performances and Material Microscopic Properties Based on Electrical Characterization and Atomistic Simulations

C Nail. , G Molas. , P Blaise. , B Sklenard. , R Berthier.
IEEE Transactions on Electron Devices, 2017, 64 (11), pp.4479-4485. ⟨10.1109/TED.2017.2750910⟩
Article dans une revue hal-01929355v1

Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Denis Blachier
Microelectronic Engineering, 2017, 178, pp.128-131. ⟨10.1016/j.mee.2017.05.009⟩
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Analytical Drain Current Compact Model in the Depletion Operation Region of Short-Channel Triple-Gate Junctionless Transistors

Theodoros Oproglidis , Andreas Tsormpatzoglou , Dimitrios Tassis , Theano Karatsori , Sylvain Barraud
IEEE Transactions on Electron Devices, 2017, 64 (1), pp.66-72. ⟨10.1109/TED.2016.2632753⟩
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Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T.A. Karatsori , C.G. Theodorou , S. Haendler , G. Ghibaudo
Solid-State Electronics, 2017, 128, pp.31-36. ⟨10.1016/j.sse.2016.10.020⟩
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Quantitative Analysis of La and Al Additives Role on Dipole Magnitude Inducing Vt Shift in High-K/Metal Gate Stack

C. Suarez-Segovia , C. Leroux , F. Domengie , G. Ghibaudo
IEEE Electron Device Letters, 2017, 38 (3), pp.379-382. ⟨10.1109/LED.2017.2651644⟩
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Comparison for 1/ f Noise Characteristics of AlGaN/GaN FinFET and Planar MISHFET

Sindhuri Vodapally , Christoforos Theodorou , Youngho Bae , Gérard Ghibaudo , Sorin Cristoloveanu
IEEE Transactions on Electron Devices, 2017, 64 (9), pp.3634-3638. ⟨10.1109/TED.2017.2730919⟩
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Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology

Giulio Torrente , Jean Coignus , Alexandre Vernhet , Jean-Luc Ogier , David Roy
Microelectronics Reliability, 2017, 79, pp.281-287. ⟨10.1016/j.microrel.2017.05.039⟩
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All Operation Region Characterization and Modeling of Drain and Gate Current Mismatch in 14-nm Fully Depleted SOI MOSFETs

Theano Karatsori , Christoforos Theodorou , Emmanuel Josse , Charalabos Dimitriadis , G. Ghibaudo
IEEE Transactions on Electron Devices, 2017, 64 (5), pp.2080-2085. ⟨10.1109/TED.2017.2686381⟩
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1/f-Noise in AlGaN/GaN Nanowire Omega-FinFETs

Sindhuri Vodapally , Young In Jang , In Man Kang , In-Tak Cho , Jong-Ho Lee
IEEE Electron Device Letters, 2017, 38 (2), pp.252-254. ⟨10.1109/LED.2016.2645211⟩
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Impact of series resistance on the operation of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2017, 129, pp.103-107. ⟨10.1016/j.sse.2016.12.004⟩
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Leakage current conduction in metal gate junctionless nanowire transistors

T.A. Oproglidis , T.A. Karatsori , S. Barraud , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2017, 131, pp.20-23. ⟨10.1016/j.sse.2017.02.003⟩
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Ultra-low power 1T-DRAM in FDSOI technology

H. El Dirani , M.S. Parihar , J. Lacord , S. Martinie , J-Ch. Barbe
Microelectronic Engineering, 2017, 178, pp.245-249. ⟨10.1016/j.mee.2017.05.047⟩
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Reliable gate stack and substrate parameter extraction based on C-V measurements for 14nm node FDSOI technology

B. Mohamad , C. Leroux , D. Rideau , M. Haond , G. Reimbold
Solid-State Electronics, 2017, 128, pp.10-16. ⟨10.1016/j.sse.2016.10.010⟩
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New Y -function based MOSFET parameter extraction method from weak to strong inversion range

J.B. Henry , Q. Rafhay , A. Cros , G. Ghibaudo
Solid-State Electronics, 2016, 123, pp.84-88. ⟨10.1016/j.sse.2016.06.004⟩
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Behavior of subthreshold conduction in junctionless transistors

So Jeong Park , Dae-Young Jeon , Laurent Montes , Mireille Mouis , Sylvain Barraud
Solid-State Electronics, 2016, 124, pp.58-63. ⟨10.1016/j.sse.2016.06.007⟩
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Low-frequency noise in bare SOI wafers: Experiments and model

L. Pirro , I. Ionica , S. Cristoloveanu , G. Ghibaudo
Solid-State Electronics, 2016, 125, pp.167-174. ⟨10.1016/j.sse.2016.07.012⟩
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Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators

I. Messaris , T.A. Karatsori , N. Fasarakis , C.G. Theodorou , S. Nikolaidis
Microelectronics Reliability, 2016, 56, pp.10-16. ⟨10.1016/j.microrel.2015.11.002⟩
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Influence of AC signal oscillator level on effective mobility measurement by split C–V technique in MOSFETs

T.A. Karatsori , G. Ghibaudo , C.A. Dimitriadis , G. Theodorou
Electronics Letters, 2016, 52 (17), pp.1492-1493. ⟨10.1049/el.2016.1715⟩
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Resistive memory variability: A simplified trap-assisted tunneling model

Daniele Garbin , Elisa Vianello , Quentin Rafhay , Mourad Azzaz , Philippe Candelier
Solid-State Electronics, 2016, 115, pp.126-132. ⟨10.1016/j.sse.2015.09.004⟩
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Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature

C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse , C.A. Dimitriadis
Solid-State Electronics, 2016, 117, pp.88-93. ⟨10.1016/j.sse.2015.11.011⟩
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Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique

L. Pirro , I. Ionica , G. Ghibaudo , X. Mescot , L. Faraone
Journal of Applied Physics, 2016, 119 (17), pp.175702. ⟨10.1063/1.4947498⟩
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Characterization and Modeling of NBTI in Nanoscale UltraThin Body UltraThin Box FD-SOI MOSFETs

Theano Karatsori , Christoforos Theodorou , Sebastien Haendler , Nicolas Planes , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2016, 63 (12), pp.4913-4918. ⟨10.1109/TED.2016.2620720⟩
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Characterization and modeling of drain current local variability in 28 and 14 nm FDSOI nMOSFETs

E.G. Ioannidis , S. Haendler , E. Josse , N. Planes , G. Ghibaudo
Solid-State Electronics, 2016, 118, pp.4-11. ⟨10.1016/j.sse.2016.01.002⟩
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Hot-carrier degradation model for nanoscale ultra-thin body ultra-thin box SOI MOSFETs suitable for circuit simulators

T.A. Karatsori , C.G. Theodorou , S. Haendler , N. Planes , G. Ghibaudo
Microelectronic Engineering, 2016, 159, pp.9-16. ⟨10.1016/j.mee.2016.01.035⟩
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Investigation of Cycle-to-Cycle Variability in HfO 2 -Based OxRAM

Giuseppe Piccolboni , Gabriel Molas , Daniele Garbin , Elisa Vianello , Olga Cueto
IEEE Electron Device Letters, 2016, 37 (6), pp.721-723. ⟨10.1109/LED.2016.2553370⟩
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Study of Hot-Carrier-Induced Traps in Nanoscale UTBB FD-SOI MOSFETs by Low-Frequency Noise Measurements

Theano Karatsori , Christoforos Theodorou , Xavier Mescot , Sebastien Haendler , Nicolas Planes
IEEE Transactions on Electron Devices, 2016, 63 (8), pp.3222-3228. ⟨10.1109/TED.2016.2583504⟩
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Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor–liquid–solid mechanism

V. Brouzet , B. Salem , P. Periwal , R. Alcotte , F. Chouchane
Solid-State Electronics, 2016, 118, pp.26 - 29. ⟨10.1016/j.sse.2016.01.005⟩
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Microscopic Analysis of Erase-Induced Degradation in 40 nm NOR Flash Technology

Giulio Torrente , Jean Coignus , Alexandre Vernhet , Jean-Luc Ogier , David Roy
IEEE Transactions on Device and Materials Reliability, 2016, 16 (4), pp.597-603. ⟨10.1109/TDMR.2016.2613138⟩
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A comparative mismatch study of the 20nm Gate-Last and 28nm Gate-First bulk CMOS technologies

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq
Solid-State Electronics, 2015, 108, pp.53-60. ⟨10.1016/j.sse.2014.12.006⟩
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Extensive study of Bias Temperature Instability in nanowire transistors

A. Laurent , X. Garros , S. Barraud , G. Reimbold , D. Roy
Microelectronic Engineering, 2015, 147, pp.10-14. ⟨10.1016/j.mee.2015.04.028⟩
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Dynamic variability in 14nm FD-SOI MOSFETs and transient simulation methodology

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Charalabos Dimitriadis , Gérard Ghibaudo
Solid-State Electronics, 2015, 111, pp.100-103. ⟨10.1016/j.sse.2015.06.001⟩
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Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

Theano Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler
IEEE Transactions on Electron Devices, 2015, 62 (10), pp.3117-3124. ⟨10.1109/TED.2015.2464076⟩
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Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1375-1382. ⟨10.1109/TED.2015.2406116⟩
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Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Jeremy Guy , Gabriel Molas , Philippe Blaise , Mathieu Bernard , Anne Roule
IEEE Transactions on Electron Devices, 2015, 62 (11), pp.3482-3489. ⟨10.1109/TED.2015.2476825⟩
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Modeling of low-frequency noise in advanced CMOS devices

F. Balestra , G. Ghibaudo , J. Jomaah
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2015, 28 (6), pp.613-627. ⟨10.1002/jnm.2052⟩
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Low temperature characterization of mobility in 14nm FD-SOI CMOS devices under interface coupling conditions

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 108, pp.30-35. ⟨10.1016/j.sse.2014.12.013⟩
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In depth characterization of electron transport in 14nm FD-SOI CMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 112, pp.13-18. ⟨10.1016/j.sse.2015.02.012⟩
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Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous In-X-Zn oxides thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2015, 117 (5), pp.055707. ⟨10.1063/1.4907681⟩
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Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2015, 103, pp.229-235. ⟨10.1016/j.sse.2014.07.007⟩
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Experimental and Theoretical Investigation of Magnetoresistance From Linear Regime to Saturation in 14-nm FD-SOI MOS Devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.3-8. ⟨10.1109/TED.2014.2366170⟩
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Modeling the Dynamic Variability Induced by Charged Traps in a Bilayer Gate Oxide

Alexandre Subirats , Xavier Garros , Joanna El Husseini , Emmanuel Vincent , Gilles Reimbold
IEEE Transactions on Electron Devices, 2015, 62 (2), pp.485-492. ⟨10.1109/TED.2014.2380474⟩
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Drain-Current Flicker Noise Modeling in nMOSFETs From a 14-nm FDSOI Technology

Eleftherios Ioannidis , Christoforos Theodorou , Theano Karatsori , Sebastien Haendler , Charalabos Dimitriadis
IEEE Transactions on Electron Devices, 2015, 62 (5), pp.1574-1579. ⟨10.1109/TED.2015.2411678⟩
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Fabrication and characterization of silicon nanowire p-i-n MOS gated diode for use as p-type tunnel FET

V. Brouzet , B. Salem , P. Periwal , G. Rosaz , T. Baron
Applied physics. A, Materials science & processing, 2015, 121 (3), pp.1285-1290. ⟨10.1007/s00339-015-9507-3⟩
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Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices

Gaspard Hiblot , Tapas Dutta , Quentin Rafhay , Joris Lacord , Madjid Akbal
IEEE Transactions on Electron Devices, 2015, 62 (1), pp.28-35. ⟨10.1109/TED.2014.2368395⟩
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Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
Solid-State Electronics, 2015, 111, pp.188-195. ⟨10.1016/j.sse.2015.06.008⟩
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HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks

Daniele Garbin , Elisa Vianello , Olivier Bichler , Quentin Rafhay , Christian Gamrat
IEEE Transactions on Electron Devices, 2015, 62 (8), pp.2494-2501. ⟨10.1109/TED.2015.2440102⟩
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Split-Capacitance and Conductance-Frequency Characteristics of SOI Wafers in Pseudo-MOSFET Configuration

Luca Pirro , Amer Diab , Irina Ionica , Gérard Ghibaudo , Lorenzo Faraone
IEEE Transactions on Electron Devices, 2015, 62 (9), pp.2717-2723. ⟨10.1109/TED.2015.2454438⟩
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On the Origin of Improved Charge Transport in Double-Gate In–Ga–Zn–O Thin-Film Transistors: A Low-Frequency Noise Perspective

Yong Xu , Chuan Liu , Paul Seyram K. Amegadez , Gi-Seong Ryu , Huaixin Wei
IEEE Electron Device Letters, 2015, 36 (10), pp.1040-1043. ⟨10.1109/LED.2015.2467164⟩
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Assessment of technological and geometrical device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai
Solid-State Electronics, 2015, 108, pp.36-41. ⟨10.1016/j.sse.2014.12.010⟩
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Compact model of short-channel effects for FDSOI devices including the influence of back-bias and fringing fields for Si and III–V technology

G. Hiblot , J. Lacord , M. Akbal , Q. Rafhay , F. Boeuf
Solid-State Electronics, 2015, 107, pp.1-7. ⟨10.1016/j.sse.2015.02.001⟩
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Compact Model for Inversion Charge in III–V Bulk MOSFET Including Non-Parabolicity

Gaspard Hiblot , Gabriel Mugny , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2015, 14 (4), pp.768-775. ⟨10.1109/TNANO.2015.2444653⟩
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Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction

T.A. Karatsori , C.G. Theodorou , E.G. Ioannidis , S. Haendler , E. Josse
Solid-State Electronics, 2015, 111, pp.123-128. ⟨10.1016/j.sse.2015.06.002⟩
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Physically-based extraction methodology for accurate MOSFET degradation assessment

Giulio Torrente , Jean Coignus , Sophie Renard , Alexandre Vernhet , Gilles Reimbold
Microelectronics Reliability, 2015, 55 (9-10), pp.1417-1421. ⟨10.1016/j.microrel.2015.06.063⟩
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Impact of Source–Drain Series Resistance on Drain Current Mismatch in Advanced Fully Depleted SOI n-MOSFETs

E. Ioannidis , C. Theodorou , S. Haendler , E. Josse , C. Dimitriadis
IEEE Electron Device Letters, 2015, 36 (5), pp.433-435. ⟨10.1109/LED.2015.2411289⟩
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Effective work function modulation by $sacrificial$ gate aluminum diffusion on HfON-based 14nm NMOS devices

C. Suarez-Segovia , C. Leroux , P. Caubet , F. Domengie , G. Reimbold
Microelectronic Engineering, 2015, 147, pp.113-116. ⟨10.1016/j.mee.2015.04.062⟩
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Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2015, 62 (3), pp.972-979. ⟨10.1109/TED.2015.2388788⟩
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A Combined Ab Initio and Experimental Study on the Nature of Conductive Filaments in Pt/HfO2/Pt Resistive Random Access Memory

Kan-Hao Xue , Boubacar Traoré , Philippe Blaise , Leonardo Fonseca , Elisa Vianello
IEEE Transactions on Electron Devices, 2014, 61 (5), pp.1394-1402. ⟨10.1109/TED.2014.2312943⟩
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Impact of channel width on back biasing effect in tri-gate MOSFET

So Jeong Park , Dae-Young Jeon , Laurent Montes , Sylvain Barraud , Gyu-Tae Kim
Microelectronic Engineering, 2014, 114, pp.91-97. ⟨10.1016/j.mee.2013.09.016⟩
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Compact Modeling of Nanoscale Trapezoidal FinFETs

Nikolaos Fasarakis , Theano Karatsori , Andreas Tsormpatzoglou , Dimitrios Tassis , Konstantinos Papathanasiou
IEEE Transactions on Electron Devices, 2014, 61 (2), pp.324-332. ⟨10.1109/TED.2013.2284503⟩
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MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools

Joris Lacord , Gérard Ghibaudo , Frédéric Boeuf
Solid-State Electronics, 2014, 91, pp.137-146. ⟨10.1016/j.sse.2013.10.007⟩
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Significant roles of low-temperature post-metallization annealing in solution-processed oxide thin-film transistors

Yong Xu , Chuan Liu , Paul Seyram K. Amegadze , Won-Tae Park , Dang Xuan Xu
Applied Physics Letters, 2014, 105 (13), pp.133505. ⟨10.1063/1.4897003⟩
Article dans une revue hal-01947622v1

Low-temperature operation of junctionless nanowire transistors: Less surface roughness scattering effects and dominant scattering mechanisms

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Applied Physics Letters, 2014, 105 (26), pp.263505. ⟨10.1063/1.4905366⟩
Article dans une revue hal-01947628v1

Source/drain induced defects in advanced MOSFETs: what device electrical characterization tells

Mireille Mouis , Jae Woo Lee , Daeyoung Jeon , Ming Shi , Minju Shin
physica status solidi (c), 2014, 11 (1), pp.138-145. ⟨10.1002/pssc.201300317⟩
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Impact of trap localization on low-frequency noise in nanoscale device

Jae Woo Lee , Wan Soo Yun , Gérard Ghibaudo
Journal of Applied Physics, 2014, 115 (19), pp.194501. ⟨10.1063/1.4878456⟩
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Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability

Omar Jonani Franco Piliado , Giancarlo Castaneda , Andre Juge , Gérard Ghibaudo
Journal of Low Power Electronics, 2014, 10 (1), pp.127-136. ⟨10.1166/jolpe.2014.1304⟩
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Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire

G. Hiblot , Q. Rafhay , F. Boeuf , G. Ghibaudo
Solid-State Electronics, 2014, 100, pp.71-78. ⟨10.1016/j.sse.2014.07.001⟩
Article dans une revue hal-01947623v1

Study of an embedded buried SiGe structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

S. Morvan , F. Andrieu , J.-C. Barbé , G. Ghibaudo
Solid-State Electronics, 2014, 98, pp.50-54. ⟨10.1016/j.sse.2014.04.013⟩
Article dans une revue hal-01947618v1

Analytical Modeling of Threshold Voltage and Interface Ideality Factor of Nanoscale Ultrathin Body and Buried Oxide SOI MOSFETs With Back Gate Control

Nikolaos Fasarakis , Theano Karatsori , Dimitrios Tassis , Christoforos Theodorou , François Andrieu
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.969-975. ⟨10.1109/TED.2014.2306015⟩
Article dans une revue hal-01947604v1

Erratum: “Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method” [Appl. Phys. Lett. 104 , 013301 (2014)]

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari
Applied Physics Letters, 2014, 104 (7), pp.079902. ⟨10.1063/1.4866287⟩
Article dans une revue hal-01947602v1

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes from 0.5μm down to 20nm

E.G. Ioannidis , S. Haendler , C.G. Theodorou , S. Lasserre , C.A. Dimitriadis
Solid-State Electronics, 2014, 95, pp.28-31. ⟨10.1016/j.sse.2014.03.002⟩
Article dans une revue hal-01947609v1

Less mobility degradation induced by transverse electric-field in junctionless transistors

So Jeong Park , Dae-Young Jeon , Laurent Montes , Mireille Mouis , Sylvain Barraud
Applied Physics Letters, 2014, 105 (21), pp.213504. ⟨10.1063/1.4902549⟩
Article dans une revue hal-01947627v1

Full split C–V method for parameter extraction in ultra thin BOX FDSOI MOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
Solid-State Electronics, 2014, 99, pp.104-107. ⟨10.1016/j.sse.2014.04.039⟩
Article dans une revue hal-01947620v1

Low-Frequency Noise Sources in Advanced UTBB FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , François Andrieu , Thierry Poiroux , Olivier Faynot
IEEE Transactions on Electron Devices, 2014, 61 (4), pp.1161-1167. ⟨10.1109/TED.2014.2307201⟩
Article dans une revue hal-01947606v1

Analytical relationship between subthreshold swing of thermionic and tunnelling currents

G. Hiblot , Quentin Rafhay , F. Boeuf , G. Ghibaudo
Electronics Letters, 2014, 50 (23), pp.1745-1747. ⟨10.1049/el.2014.3206⟩
Article dans une revue hal-01959261v1

Effect of Intertube Junctions on the Thermoelectric Power of Monodispersed Single Walled Carbon Nanotube Networks

Mingxing Piao , Min-Kyu Joo , Junhong Na , Yun-Jeong Kim , Mireille Mouis
Journal of Physical Chemistry C, 2014, 118 (46), pp.26454-26461. ⟨10.1021/jp505682f⟩
Article dans une revue hal-01947625v1

Evaluating injection and transport properties of organic field-effect transistors by the convergence point in transfer-length method

Chuan Liu , Yong Xu , Gérard Ghibaudo , Xubing Xu , Takeo Minari
Applied Physics Letters, 2014, 104 (1), pp.013301. ⟨10.1063/1.4860958⟩
Article dans une revue hal-01947594v1

Separation of surface accumulation and bulk neutral channel in junctionless transistors

Dae-Young Jeon , So Jeon , Mireille Mouis , Min-Kyu Joo , Sylvain Barraud
Applied Physics Letters, 2014, 104 (26), pp.263510. ⟨10.1063/1.4886139⟩
Article dans une revue hal-01947616v1

Flat-band voltage and low-field mobility analysis of junctionless transistors under low-temperature

Min-Kyu Joo , Mireille Mouis , Dae-Young Jeon , Sylvain Barraud , So Jeong Jeon
Semiconductor Science and Technology, 2014, 29 (4), pp.045024. ⟨10.1088/0268-1242/29/4/045024⟩
Article dans une revue hal-01947608v1
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Physics of the frequency response of rectifying organic Schottky diodes

Stephane Altazin , Raphael Clerc , Romain Gwoziecki , Jean-Marie Verilhac , Damien Boudinet
Journal of Applied Physics, 2014, 115, pp.064509. ⟨10.1063/1.4865739⟩
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Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journal of Applied Physics, 2014, 115 (21), pp.214501. ⟨10.1063/1.4880163⟩
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Metal evaporation dependent charge injection in organic transistors

Yong Xu , Chuan Liu , Huabin Sun , Francis Balestra , Gérard Ghibaudo
Organic Electronics, 2014, 15 (8), pp.1738-1744. ⟨10.1016/j.orgel.2014.05.006⟩
Article dans une revue hal-01947617v1

Impact of low-frequency noise variability on statistical parameter extraction in ultra-scaled CMOS devices

E. Ioannidis , G. Theodorou , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2014, 50 (19), pp.1393-1395. ⟨10.1049/el.2014.1837⟩
Article dans une revue hal-01947621v1

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu
ECS Transactions, 2014, 64 (8), pp.61-68. ⟨10.1149/06408.0061ecst⟩
Article dans une revue hal-01947593v1

Understanding Thickness-Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise

Y. Xu , C. Liu , W. Scheideler , S.L. Li , W.W. Li
IEEE Electron Device Letters, 2013, 34 (10), pp.1298-1300. ⟨10.1109/LED.2013.2277613⟩
Article dans une revue hal-00994392v1

Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.101-104. ⟨10.1016/j.sse.2012.12.003⟩
Article dans une revue hal-01002104v1

Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

T. Dutta , Q. Rafhay , R. Clerc , J. Lacord , S. Monfray
Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩
Article dans une revue hal-01002086v1

Investigating doping effects on high-kappa metal gate stack for effective work function engineering

Cédric Leroux , S. Baudot , M. Charbonnier , A. van Der Geest , P. Caubet
Solid-State Electronics, 2013, 88, pp.21-26. ⟨10.1016/j.sse.2013.04.011⟩
Article dans une revue hal-01002092v1

RC Model for Frequency Dependence of Split C-V Measurements on Bare SOI Wafers

A. Diab , I. Ionica , G. Ghibaudo , S. Cristoloveanu
IEEE Electron Device Letters, 2013, 34 (6), pp.792-794. ⟨10.1109/LED.2013.2257663⟩
Article dans une revue hal-00994383v1

Gate-last integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Casse
Microelectronic Engineering, 2013, 109, pp.306-309. ⟨10.1016/j.mee.2013.03.045⟩
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Joule's law for organic transistors exploration: Case of contact resistance

Yong Xu , Chuan Liu , Yun Li , T. Minari , P. Darmawan
Journ. Appl. Phys., 2013, 113 (Issue 6), pp.no. 064507. ⟨10.1063/1.4792066⟩
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"Materials, Devices and Systems Science, Engineering and Architectures" (Proceedings of ISCDG'2012)

G. Ghibaudo , F. Balestra , S. Deleonibus
Guest Editors, 2013, 63 (1)
Article dans une revue hal-01061246v1

Static and low frequency noise characterization of N-type random network of carbon nanotubes thin film transistors

M.K. Joo , M. Mouis , D.Y. Jeon , G.T. Kim , U.J. Kim
Journ. Appl. Phys., 2013, 114 (15), pp.154503:1-10. ⟨10.1063/1.4825221⟩
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How small the contacts could be optimal for nanoscale organic transistors?

Y. Xu , C. Liu , W. Scheideler , P. Darmawan , S.L. Li
Organic Electronics, 2013, 14 (7), pp.1797-1804. ⟨10.1016/j.orgel.2013.04.014⟩
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Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan
Microelectronic Engineering, 2013, 109, pp.334-337. ⟨10.1016/j.mee.2013.03.161⟩
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Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances

I. Ben Akkez , C. Fenouillet-Beranger , A. Cros , P. Perreau , S. Haendler
Solid-State Electronics, 2013, 90, pp.134-142. ⟨10.1016/j.sse.2013.02.039⟩
Article dans une revue hal-01002180v1

New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors

D.Y. Jeon , S.J. Park , M. Mouis , S. Barraud , G.T. Kim
Solid-State Electronics, 2013, 89, pp.139-141. ⟨10.1016/j.sse.2013.08.003⟩
Article dans une revue hal-01002110v1

Revisited parameter extraction methodology for electrical characterization of junctionless transistors

D.-Y. Jeon , S. J. Park , M. Mouis , M. Berthome , S. Barraud
Solid-State Electronics, 2013, 90, pp.86-93. ⟨10.1016/j.sse.2013.02.047⟩
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Characterization and modeling of low frequency noise in CMOS inverters

E.G. Ioannidis , S. Haendler , C.A. Dimitriadis , G. Ghibaudo
Solid-State Electronics, 2013, 81, pp.151-156. ⟨10.1016/j.sse.2012.12.001⟩
Article dans une revue hal-01001963v1

Sidewall mobility and series resistance in a multichannel tri-gate MOSFET

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim
Semiconductor Science and Technology, 2013, 28 (6), pp.065009. ⟨10.1088/0268-1242/28/6/065009⟩
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Impact Of Single Charge Trapping On The Variability of Ultra-Scaled Planar And Tri-Gate FDSOI MOSFETs: Experiment vs Simulation

A. Subirats , X. Garros , J. El Husseini , C. Le Royer , G. Reimbold
IEEE Transactions on Electron Devices, 2013, 60, pp.2604-2610
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Low-temperature electrical characterization of junctionless transistors

Dae-Young Jeon , So Jeong Jeon , Mireille Mouis , Sylvain Barraud , Gyu-Tae Kim
Solid-State Electronics, 2013, 80, pp.135-141
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Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width

R. Coquand , M. Cassé , D. Cooper , V. Maffini-Alvaro , M.-P. Samson
IEEE Transactions on Electron Devices, 2013, 60, pp.727-732. ⟨10.1109/TED.2012.2231684⟩
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Scaling of high-kappa/metal-gate TriGate SOI nanowire transistors down to 10 nm width

R. Coquand , S. Barraud , M. Casse , P. Leroux , C. Vizioz
Solid-State Electronics, 2013, 88, pp.32-36. ⟨10.1016/j.sse.2013.04.006⟩
Article dans une revue hal-01002171v1

Back biasing effects in tri-gate junctionless transistors

S.J. Park , D.Y. Jeon , L. Montes , S. Barraud , G.T. Kim
Solid-State Electronics, 2013, 87, pp.74-79. ⟨10.1016/j.sse.2013.06.004⟩
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Strain-Enhanced Performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyamad , D. Cooper , C. Vizioz
ECS Transactions, 2013, 53, pp.125-136
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Impact of dynamic variability on the operation of CMOS inverter

E.G. Ioannidis , S. Haendler , J.P. Manceau , C.A. Dimitriadis , G. Ghibaudo
Electronics Letters, 2013, 49 (19), pp.214. ⟨10.1049/el.2013.1343⟩
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Static electrical characterization and low frequency noise of a-InHfZnO thin film transistors

S.J. Park , D.-Y. Jeon , S.-E. Ahn , S. Jeon , L. Montes
Thin Solid Films, 2013, 548, pp.560-565. ⟨10.1016/j.tsf.2013.09.024⟩
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A new method for the extraction of flat-band voltage and doping concentration in Tri-gate Junctionless Transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.113-118. ⟨10.1016/j.sse.2012.11.011⟩
Article dans une revue hal-01001935v1

Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano
Microelectronic Engineering, 2013, 109, pp.282-285. ⟨10.1016/j.mee.2013.03.008⟩
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Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

M.K. Joo , J. Huh , M. Mouis , S.J. Park , D.Y. Jeon
Applied Physics Letters, 2013, 102 (Issue 5), pp.053114. ⟨10.1063/1.4788708⟩
Article dans une revue hal-01017436v1
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ANALYTICAL MODELS AND ELECTRICAL CHARACTERISATION OF ADVANCED MOSFETS IN THE QUASI BALLISTIC REGIME

Raphael Clerc , Gérard Ghibaudo
International Journal of High Speed Electronics and Systems, 2013, 22 (1), pp.1350002. ⟨10.1142/S012915641350002X⟩
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Mobility coupling effects due to remote Coulomb scattering in thin-film FD-SOI CMOS devices

K. Bennamane , I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Balestra
Electronics Letters, 2013, 49 (7), pp.490-491. ⟨10.1049/el.2012.4150⟩
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Grain boundary composition and conduction in HfO2: An ab initio study

K.H. Xue , P. Blaise , L.R.C. Fonseca , G. Molas , E. Vianello
Applied Physics Letters, 2013, 102 (20), pp.201908. ⟨10.1063/1.4807666⟩
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Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low Frequency Noise Analysis

Z. Fang , H.Y. Yu , W. J. Fan , G. Ghibaudo , J. Buckley
IEEE Transactions on Electron Devices, 2013, 60 (Issue3), pp.1272-1275. ⟨10.1109/TED.2013.2240457⟩
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Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate silicon nanowire MOSFETs

M. Koyama , M. Casse , R. Coquand , S. Barraud , C. Vizioz
Solid-State Electronics, 2013, 84, pp.46-52. ⟨10.1016/j.sse.2013.02.024⟩
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Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances

L. Rahhal , A. Bajolet , C. Diouf , F. Kergomard , J. Rosa
Solid-State Electronics, 2013, 85, pp.15-22. ⟨10.1016/j.sse.2013.03.001⟩
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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

A. Diab , C. Fernandez , A. Ohata , N. Rodriguez , I. Ionica
Solid-State Electronics, 2013, 90, pp.127-133. ⟨10.1016/j.sse.2013.02.041⟩
Article dans une revue hal-01001928v1

Unexpected impact of germanium content in SiGe bulk PMOSFETs

C. Diouf , A. Cros , A. Soussou , D. Rideau , S. Haendler
Solid-State Electronics, 2013, 86, pp.45-50. ⟨10.1016/j.sse.2013.04.024⟩
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"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction

C. Diouf , A. Cros , S. Monfray , J. Mitard , J. Rosa
Solid-State Electronics, 2013, 85, pp.12-14. ⟨10.1016/j.sse.2013.03.007⟩
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New parameter extraction method based on split C-V measurements in FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Q. Rafhay
Solid-State Electronics, 2013, 84, pp.142-146. ⟨10.1016/j.sse.2013.02.011⟩
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Effects of channel width variation on electrical characteristics of tri-gate Junctionless Transistors

D.-Y. Jeon , S. J. Park , M. Mouis , S. Barraud , G.-T. Kim
Solid-State Electronics, 2013, 81, pp.58-62. ⟨10.1016/j.sse.2013.01.002⟩
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Origin of the low-frequency noise in n-channel FinFETs

C. G. Theodorou , T. Hoffman , T. Chiarella , G. Ghibaudo , C.A. Dimitriadis
Solid-State Electronics, 2013, 82, pp.21-24. ⟨10.1016/j.sse.2013.01.009⟩
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Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High-k Control Dielectrics

Guillaume Gay , Gabriel Molas , Marc Bocquet , Eric Jalaguier , Marc Gély
IEEE Transactions on Electron Devices, 2012, 59 (4), pp.933 - 940. ⟨10.1109/TED.2012.2182769⟩
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Symmetrical unified compact model of short-channel double-gate MOSFETs

K. Papathanasiou , C.G. Theodorou , A. Tsormpatzoglou , D.H. Tassis , A. Dimitriadis
Solid-State Electronics, 2012, 69, pp.55-61. ⟨10.1016/j.sse.2011.10.002⟩
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Short channel mobility analysis of SiGe nanowire p-type field effect transistors: Origins of the strain induced performance improvement

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Kiichi Tachi , Gyu Tae Kim
Applied Physics Letters, 2012, 101 (14), pp.143502. ⟨10.1063/1.4756910⟩
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Revisited approach for the characterization of Gate Induced Drain Leakage

Quentin Rafhay , Cuiqin Xu , Perrine Batude , Mireille Mouis , Maud Vinet
Solid-State Electronics, 2012, 71, pp.37-41. ⟨10.1109/ULIS.2011.5757994⟩
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Flicker noise in n-channel nanoscale tri-gate fin-shaped field-effect transistors

C. Theodorou , N. Fasarakis , T. Hoffman , T. Chiarella , G. Ghibaudo
Applied Physics Letters, 2012, 101 (24), pp.243512. ⟨10.1063/1.4772590⟩
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Investigation of charge-trap memories with AlN based band engineered storage layers

Gabriel Molas , J.P. Colonna , R. Kies , D. Belhachemi , Marc Bocquet
Solid-State Electronics, 2011, 58 (1), pp.68 - 74. ⟨10.1016/j.sse.2010.11.030⟩
Article dans une revue hal-01804675v1

Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors

Y. Xu , T. Minari , T. Kazuito , R. Gwoziecki , F. Balestra
Applied Physics Letters, 2011, 98, pp.033505
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Origin of Low-Frequency Noise in the Low Drain Current Range of Bottom-Gate Amorphous IGZO Thin-Film Transistors

Christoforos Theodorou , Andreas Tsormpatzoglou , Charalabos Dimitriadis , Shahrukh Khan , Jalal Jomaah
IEEE Electron Device Letters, 2011, 32 (7), pp.898-900. ⟨10.1109/LED.2011.2143386⟩
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A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

Alessandro Cresti , Marco Pala , Stefano Poli , Mireille Mouis , Gérard Ghibaudo
IEEE Transactions on Electron Devices, 2011, 58 (8), pp.2274-2281. ⟨10.1109/TED.2011.2147318⟩
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Mobility analysis of surface roughness scattering in FinFET devices

Jae Woo Lee , Doyoung Jang , Mireille Mouis , Gyu Tae Kim , Thomas Chiarella
Solid-State Electronics, 2011, 62 (1), pp.195-201. ⟨10.1016/j.sse.2011.04.020⟩
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Analytical low-frequency noise model in the linear region of lightly doped nanoscale double-gate metal-oxide-semiconductor field-effect transistors

E.G. Ioannidis , G. Theodorou C. , A. Tsormpatzoglou , D.H. Tassis , K. Papathanasiou
Journ. Appl. Phys., 2010, 108, pp.064512. ⟨10.1063/1.3483279S⟩
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Mobility enhancement by CESL strain in short-channel ultrathin SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , T. Skotnicki , S. Cristoloveanu
Solid-State Electronics, 2010, 54 (2), pp.123-130
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Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo , E. Vincent
Microelectronics Reliability, 2010, 50, pp.1259-1262
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Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors

X. Yong , M. Takeo , T. Kazuhito , A. Chroboczek , G. Ghibaudo
Journ. Appl. Phys., 2010, 107, pp.114507
Article dans une revue hal-00596318v1

HfO2-based Gate Stacks Transport Mechanisms and Parameter Extraction

J. Coignus , Cédric Leroux , R. Clerc , R. Truche , G. Ghibaudo
Solid-State Electronics, 2010, 54 (9), pp.972-978
Article dans une revue hal-00596344v1

Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application

V. Puget , G. Bossu , P. Masson , P. Mazoyer , R. Ranica
IEEE Transactions on Electron Devices, 2010, 57 (4), pp.855-865
Article dans une revue hal-00596201v1

Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

D.H. Tassis , A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Microelectronic Engineering, 2010, 87, pp.23534-2357
Article dans une revue hal-00596325v1

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

J.W. Lee , D. Jang , T. Kim , M. Mouis , G. Ghibaudo
Journ. Appl. Phys, 2010, 107, pp.044501
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Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas
Japanese Journal of Applied Physics, 2010, 49, pp.04DD12
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Measurement of Dipoles/Roll-Off /Work functions by coupling CV and IPE and study of their dependence on fabrication process

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , E. Martinez
IEEE Transactions on Electron Devices, 2010, 57, pp.1819-1819
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Gate-all-around technology: Taking advantage of ballistic transport?

Huguenin J.L. , G. Bidal , S. Denorme , D. Fleury , N. Loubet
Solid-State Electronics, 2010, 54 (9), pp.883-889
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Extraction of low-frequency noise in contact resistance of organic field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , R. Gwoziecki , R. Coppard
Applied Physics Letters, 2010, 97, pp.033503
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Analytical modeling for the current-voltage characteristics of lightly-doped symmetric double-gate MOSFETs

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Microelectronic Engineering, 2010, 87, pp.1764-1768
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Modified transmission-line method for contact resistance extraction in organic field-effect transistors

Y. Xu , R. Gwoziecki , Isabelle Chartier , R. Coppard , F. Balestra
Applied Physics Letters, 2010, 97, pp.063302
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Modeling Local Electrical Fluctuations in 45nm Heavily Pocket-implanted Bulk MOSFET

C. Mezzomo , A. Bajolet , A. Cathignol , E. Joss , G. Ghibaudo
Journal of Solid State Electrochemistry, 2010, 54, pp.1359-1366
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Non-metallic effects in silicided gate MOSFETs

N. Rodrriguez , F. Gamiz , R. Clerc , C. Sampedro , A. Godoy
Solid-State Electronics, 2010, 53 (12), pp.1313-1317
Article dans une revue hal-00596351v1

Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors

J. Doyoung , J.W. Lee , Tachi Kiichi , L. Montes , T. Ernst
Applied Physics Letters, 2010, 97, pp.073505
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Origin of low-frequency noise in pentacene field-effect transistors

Y. Xu , T. Minari , K. Tsukagoshi , J. Chroboczek , F. Balestra
Solid-State Electronics, 2010, pp.In Press, Corrected Proof, Available online 4 February 2011
Article dans une revue hal-00596355v1

Compact drain current model of short-channel cylindrical gate-all-around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis
Semiconductor Science and Technology, 2009, 24, pp.075017
Article dans une revue hal-00596143v1

Method for 3D electrical parameters dissociation and extraction in multichannel MOSFET (MCFET)

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet
Solid-State Electronics, 2009, 53, pp.746-752
Article dans une revue hal-00596162v1

In Situ Comparison of Si/High- K and Si/SiO2 Channel Properties in SOI MOSFETs

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , T. Skotnicki , G. Ghibaudo
IEEE Electron Device Letters, 2009, 30 (10), pp.1075-1077. ⟨10.1109/LED.2009.2027141⟩
Article dans une revue hal-00596074v1

Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET

S. Bordez , A. Cros , K. Rochereau , G. Ghibaudo
Solid-State Electronics, 2009, 53 (2), pp.127-133
Article dans une revue hal-00596158v1

Piezoresistance Effect of Strained and Unstrained Fully-Depleted Silicon-On-Insulator MOSFETs Integrating an HfO2/TiN Gate Stack

F. Rochette , M. Cassé , M. Mouis , A. Haziot , T. Pioger
Solid-State Electronics, 2009, 53 (3), pp.392-396
Article dans une revue hal-00596170v1

Folded fully depleted FET using Silicon-On-Nothing technology as a highly W-scaled planar solution

G. Bidal , N. Loubet , C. Fenouillet-Beranger , S. Denorme , P. Perreau
Solid-State Electronics, 2009, 53, pp.735-740
Article dans une revue hal-00596173v1

Low-Temperature Electrical Characterization of Fully Depleted eXtra-strained SOI n-MOSFETs with TiN/HfO2 Gate Stack for the 32-nm Technology Node

Sylvain Feruglio , François Andrieu , Faynot Olivier , Gérard Ghibaudo
Cryogenics, 2009, 49 (11), pp.605-610. ⟨10.1016/j.cryogenics.2008.12.004⟩
Article dans une revue hal-01198843v1

Investigation of Hybrid Molecular/Silicon Memories With Redox-Active Molecules Acting as Storage Media

T. Pro , J. Buckley , K. Huang , A. Calborean , M. Gely
IEEE Transactions on Nanotechnology, 2009, 8, pp.204-213
Article dans une revue hal-00596094v1
Image document

Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retention

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.486-489. ⟨10.1116/1.3071846⟩
Article dans une revue hal-00596103v1

Method for extraction of  parameter characterizing µeff vs Eeff curves in FD-SOI Si MOS devices

K. Bennamane , G. Ghibaudo , A. Benfdila
Electronics Letters, 2009, 45 (12), pp.655-657
Article dans une revue hal-00596070v1
Image document

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.338-345. ⟨10.1116/1.3043539⟩
Article dans une revue hal-00596105v1

SiO2 interfacial layer as the origin of the breakdown of high- dielectrics stacks

M. Rafik , G. Ribes , Daniel Roy , G. Ghibaudo
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.395-399
Article dans une revue hal-00596107v1

Low frequency noise analysis in HfO2/SiO2 gate oxide fully depleted silicon on insulator transistors

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
Journal of Vacuum Science and Technology, 2009, 27 (1), pp.402-405
Article dans une revue hal-00596106v1

EKV3 compact modeling of MOS transistors from a 0.18 µm CMOS technology for mixed analog-digital circuit design at low temperature

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo , M. Bucher
Cryogenics, 2009, pp.In Press, Corrected Proof, Available online 1 January 2009
Article dans une revue hal-00596009v1

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature and oxide charge

A. Negara , K. Cherkaoui , Hurley Hurley , C.D Young , P. Majhi
Journ. Appl. Phys., 2009, 105 (2), pp.024510:1-8
Article dans une revue hal-00596109v1

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

M. Cassé , F. Rochette , L. Thevenod , N. Bhouri , F. Andrieu
Journ. Appl. Phys., 2009, 105 (8), pp.084503:1-9
Article dans une revue hal-00596113v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , E. Vianello , L. Perniola , H. Grampeix
Microelectronic Engineering, 2009, 86, pp.1796-1803
Article dans une revue hal-00596125v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet
physica status solidi (c), 2009, 6 (6), pp.1408-1411
Article dans une revue hal-00596139v1

DC and Low Frequency Noise Characterization of FinFET Devices

K. Bennamane , T. Boutchacha , G. Ghibaudo , M. Mouis , N. Collaert
Solid-State Electronics, 2009, 53, pp.1263-1267
Article dans une revue hal-00596176v1

Tuning the dipole at the High-/SiO2 interface in advanced metal gate stacks.

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin
Microelectronic Engineering, 2009, 86, pp.1740-1742
Article dans une revue hal-00596131v1

A New Technique to Extract the Source/Drain Series Resistance of MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Julien Rosa , Gérard Ghibaudo
IEEE Electron Device Letters, 2009, 30 (9), pp.975 - 977. ⟨10.1109/LED.2009.2026592⟩
Article dans une revue hal-00465767v1

Electrical characterization and design optimization of FinFETs with a TiN/HfO2 gate stack

A. Tsormpatzoglou , D.H. Tassis , C.A. Dimitriadis , M. Mouis , G. Ghibaudo
Semiconductor Science and Technology, 2009, 24 (12), pp.125001:6
Article dans une revue hal-00596144v1

Experimental characterization of the subthreshold leakage current in triple-gate FinFETs

A. Tsormpatzoglou , C.A. Dimitriadis , M. Mouis , G. Ghibaudo , N. Collaert
Solid-State Electronics, 2009, 53 (3), pp.359-363
Article dans une revue hal-00596155v1

Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

I. Pappas , G. Ghibaudo , C.A. Dimitriadis , C. Fenouillet-Beranger
Solid-State Electronics, 2009, 53 (1), pp.54-56
Article dans une revue hal-00596166v1
Image document

Impact of a HTO/Al$_2$O$_3$ bi-layer blocking oxide in nitride-trap non-volatile memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley
Solid-State Electronics, 2009, 53, pp.786 - 791. ⟨10.1016/j.sse.2009.03.018⟩
Article dans une revue hal-01737746v1

Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , M. Ferrier , G. Pananakakis , G. Ghibaudo
Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547
Article dans une revue hal-00391540v1

Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo
physica status solidi (c), 2008, 5 (12), pp.3605-3608
Article dans une revue hal-00391594v1

The Quantization Impact of Accumulated Carriers in Silicide-Gated MOSFETs

N. Rodriguez , F. Gámiz , L. Donetti , R. Clerc , G. Ghibaudo
IEEE Electron Device Letters, 2008, 29, pp.628-631
Article dans une revue hal-00391601v1

Impact of Silicon nitride CESL on NLDEMOS transistor reliability,

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
Microelectronics Reliability, 2008, 48 (8-9), pp.1539-1543
Article dans une revue hal-00392670v1

In-depth Electrical Characterization of sub-45nm fully depleted strained SOI MOSFETs with TiN/HfO2 gate stack

Sylvain Feruglio , F. Andrieu , O. Faynot , G. Ghibaudo
Solid-State Electronics, 2008, 55, 489 (4), ⟨10.1016/j.sse.2007.10.039⟩
Article dans une revue hal-00391693v1

Origin of the Asymmetry in the Statistical Variability of n- and p-channel Poly Si Gate Bulk MOSFETs

A. Asenov , A. Cathignol , B. Cheng , K. P. Mckenna , A. R. Brown
IEEE Electron Device Letters, 2008, 29, 913
Article dans une revue hal-00391676v1

New Characterization Methodology of Borderless Silicon Nitride Charge Kinetics Using C-V Hysteresis Loops

G. Beylier , S. Bruyère , P. Mora , G. Ghibaudo
Journal of The Electrochemical Society, 2008, 155, H273-H279
Article dans une revue hal-00391680v1

Analysis of spatial and energy slow trap profile in HfO2/SiO2 metal-oxide-silicon devices by low frequency noise measurements

L. Zafari , J. Jomaah , G. Ghibaudo
Fluctuation and Noise Letters, 2008, 8, L99
Article dans une revue hal-00391716v1

Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below

Dominique Fleury , Antoine Cros , Krunoslav Romanjek , David Roy , Franck Perrier
IEEE Transactions on Semiconductor Manufacturing, 2008, 21 (4), pp.504 - 512. ⟨10.1109/TSM.2008.2004316⟩
Article dans une revue hal-00465752v1

Automatic Extraction Methodology for Accurate Measurements of Effective Channel Length on 65nm MOSFET Technology and Below.

D. Fleury , A. Cros , K. Romanjek , Daniel Roy , F. Perrier
IEEE Transactions on Semiconductor Manufacturing, 2008
Article dans une revue hal-00391695v1

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.

G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gély
Microelectronic Engineering, 2008, 85, 2393-2399
Article dans une revue hal-00391751v1

Modeling and simulation of coupling effect on low frequency noise in advance SOI MOSFETs.

L. Zafari , J. Jomaah , G. Ghibaudo
Fluctuation and Noise Letters, 2008, 8, L87
Article dans une revue hal-00391713v1

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs

Q. Rafhay , R. Clerc , G. Ghibaudo , G. Pananakakis
Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481
Article dans une revue hal-00391582v1

Threshold Voltage Model for Short-Channel Undoped symmetrical Double-Gate MOSFETs

A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo
IEEE Transactions on Electron Devices, 2008, 55, 2512
Article dans une revue hal-00391604v1

3D nanowire gate-all-around transistors: Specific integration and electrical features

C. Dupré , T. Ernst , V. Maffini-Alvaro , V. Delaye , J.-M. Hartmann
Solid-State Electronics, 2008, 52, 519
Article dans une revue hal-00391692v1

Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. Nitride

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier
Microelectronics Reliability, 2008, 48 (8-9), pp.1198-1201
Article dans une revue hal-00392673v1

Quantitative Evaluation of Statistical Variability Sources in a 45nm Technological Node LP N-MOSFET

A. Cathignol , B. Cheng , D. Chanemougame , A. R. Brown , K. Rochereau
IEEE Electron Device Letters, 2008, 29 (6), pp.609-611
Article dans une revue hal-00392652v1

Extraction of eta parameter characterising µ(eff) against E-eff curves in strained Si nMOS devices

K. Bennamane , M. Demichielis , G. Ghibaudo , D. Esseni
Electronics Letters, 2008, 44, 1219-1220
Article dans une revue hal-00391709v1

Physical Understanding of the Hooge Parameter in ZnO Nanowire Devices.

J. Lee , I. Han , B.Y. Yu , G.C. Yi , G. Ghibaudo
Journal of the Korean Physical Society, 2008, 53, pp.339-342
Article dans une revue hal-00391707v1

On the Physical Origins of Mismatch in Si/SiGe:C Heterojunction Bipolar Transistors for BiCMOS Technologies.

S. Danaie , M. Marin , G. Ghibaudo
Solid-State Electronics, 2008, 52, 323
Article dans une revue hal-00391686v1

Semi-analytical modeling of short channel effects in Si and Ge symmetrical double-gate MOSFETs

A. Tsormpatzoglou , C. Dimitriadis , R. Clerc , Q. Rafhay , G. Pananakakis
IEEE Transactions on Electron Devices, 2008, 54 (8), pp.1943-1946
Article dans une revue hal-00392897v1

Low-frequency noise characterization of ZnO nanorod back-gate field-effect transistor structure

J. Lee , B.Y. Yu , C.H. Lee , G.C. Yi , S.H. Son
Physica E: Low-dimensional Systems and Nanostructures, 2008, 40, 2147-2149
Article dans une revue hal-00391703v1

The influence of HfO2 film thickness on the interface state density and low field mobility of n channel HfO2/TiN gate MOSFETs

M. Negara , K. Cherkaoui , P. Majhi , C. Young , W. Tsai
Microelectronic Engineering, 2007, 84 (9-10), pp.1874-1877
Article dans une revue hal-00393091v1

Accurate determination of flat band voltage in advanced MOS structure

Cédric Leroux , G. Ghibaudo , G. Reimbold
Microelectronics Reliability, 2007, 47 (4-5), pp.743-747
Article dans une revue hal-00393326v1

Low Frequency Noise in Multi-Gate SOI CMOS Devices

L. Zafari , J. Jomaah , Gérard Ghibaudo
Solid-State Electronics, 2007, 51, pp.292
Article dans une revue hal-00145099v1

Ultra thin fully depleted SOI MOSFETs: Special charge properties and coupling effects

S. Eminente , S. Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo
Solid-State Electronics, 2007, 51, pp.239-244
Article dans une revue hal-00393606v1

Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs

M. Ferrier , Raphael Clerc , L. Lucci , Quentin Rafhay , Georges Pananakakis
IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621
Article dans une revue hal-01957720v1

Low Frequency Noise in Multi-Gate SOI CMOS Devices

L. Zafari , J. Jomaah , G. Ghibaudo
Solid-State Electronics, 2007, 51 (2), pp.292-298
Article dans une revue hal-00393610v1

Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films

C. Dupré , T. Ernst , J.-M. Hartmann , F. Andrieu , J.-P. Barnes
Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8
Article dans une revue hal-00393080v1

Automatic statistical full quantum analysis of C-V and I-V characteristics for advanced MOS gate stacks

Cédric Leroux , F. Allain , A. Toffoli , G. Ghibaudo , G. Reimbold
Microelectronic Engineering, 2007, 84 (9-10), pp.2408-2411
Article dans une revue hal-00393151v1

Tensile strain in arsenic heavily doped Si

G. Borot , L. Rubaldo , L. Clément , R. Pantel , D. Dutartre
Journ. Appl. Phys, 2007, 102 (10), pp.103505:1-5
Article dans une revue hal-00393074v1

High threshold voltage matching performance on gate-all-around MOSFET

A. Cathignol , A. Cros , S. Harrison , R. Cerrutti , P. Coronel
Solid-State Electronics, 2007, 51 (11-12), pp.1458-1465
Article dans une revue hal-00393706v1

High threshold voltage matching performance on gate-all-around MOSFET

A. Cathignol , A. Cros , S. Harrison , R. Cerrutti , P. Coronel
Solid-State Electronics, 2007, 51, pp.1450
Article dans une revue hal-00196042v1

Modified space-charge limited conduction in tantalum pentoxide MIM capacitors

V. Martinez , C. Besset , F. Monsieur , L. Montès , G. Ghibaudo
Microelectronic Engineering, 2007, 84 (9-10), pp.2310-2313
Article dans une revue hal-00393314v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyere , D. Benoit , G. Ghibaudo
Microelectronics Reliability, 2007, 47 (4-5), pp.660-664
Article dans une revue hal-00393545v1

Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate

T. Contaret , B. Touati , G. Ghibaudo , F. Bœuf , T. Skotnicki
Solid-State Electronics, 2007, 51 (4), pp.633-637
Article dans une revue hal-00393634v1

Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

G. Reimbold , J. Mitard , X. Garros , Cédric Leroux , G. Ghibaudo
Microelectronics Reliability, 2007, 47 (4-5), pp.660-664
Article dans une revue hal-00393386v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs by magnetoresistance technique

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez
Solid-State Electronics, 2007, 51 (11-12), pp.1494-1499
Article dans une revue hal-00393713v1

Comparison of carrier velocity gain in Uniaxially and Biaxially Strained N-MOSFETs

T. Benshidoum , G. Ghibaudo , F. Boeuf
Electronics Letters, 2007, 43, pp.647648
Article dans une revue hal-00392835v1

Borderless silicon nitride defect behaviour and their influences on initial data loss in single polysilicon flash memories

G. Beylier , S. Bruyère , G. Ghibaudo
Microelectronic Engineering, 2007, 84 (9-10), pp.1990-1993
Article dans une revue hal-00393156v1

Impact of TiN plasma post-treatment on alumina electron trapping

A. Bajolet , S. Bruyère , M. Proust , L. Montès , G. Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2007, 7 (2), pp.242-251
Article dans une revue hal-00392849v1

Electron mobility in quasi ballistic Si MOSFETs

J. Łusakowski , W. Knap , Y. Meziani , J.P. Cesso , A. El Fatimy
Solid-State Electronics, 2006, 50, pp.632
Article dans une revue hal-00145115v1

Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra
Fluctuations and noise letters, 2006, 6, pp.L427
Article dans une revue hal-00145512v1

Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf
Solid-State Electronics, 2006, 50, pp.644
Article dans une revue hal-00145505v1

Excess drain noise simulations in ultra thin oxides MOSFETs

T. Contaret , Gérard Ghibaudo , A. Ferron , F. Bœuf
Journal of Computational Electronics, 2006, 5, pp.187
Article dans une revue hal-00145507v1

Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , G. Pananakakis , E. Picollet , N. Segura
Solid-State Electronics, 2006, 50, pp.1244-1251
Article dans une revue hal-00145449v1

Modeling and optimization of series resistance of planar MIM capacitors

A. Bajolet , R. Clerc , E. Picollet , N. Segura , S. Boret
Solid-State Electronics, 2006, 50, pp.1244
Article dans une revue hal-00145111v1

Low temperature characterization of effective mobility in uniaxially and biaxially strained N-MOSFETs

F. Lime , F. Andrieu , J. Derix , Gérard Ghibaudo , F. Boeuf
Solid-State Electronics, 2006, 50, pp.644
Article dans une revue hal-00145112v1

Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki
Solid-State Electronics, 2006, 50, pp.69-77
Article dans une revue hal-00145456v1

Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes S. Bruyère D. Roy C. Parthasarathy M. Muller M. Denais V. Huard T. Skotnicki , G. Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132
Article dans une revue hal-00145510v1

Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) MOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz
Solid-State Electronics, 2006, 50, pp.566
Article dans une revue hal-00145501v1

Impact of gate polysilicon interface on carrier trapping low frequency noise in advanced MOSFET's

Gérard Ghibaudo , J. Jomaah , F. Balestra
Fluctuations and noise letters, 2006, 6, pp.L427
Article dans une revue hal-00145107v1

Differential Magnetoresistance Technique for Mobility Extraction in Ultra-Short Channel FDSOI Transistors

Gérard Ghibaudo , W. Chaisantikulwat , Mireille Mouis , C. Gallon , C. Fenouillet-Beranger
Solid-State Electronics, 2006, 50 Issue 4, pp.637-643
Article dans une revue hal-00145113v1

A new degradation mode for advanced heterojunction bipolar transistors under reverse bias stress

M. Ruat , A. Pakfar , N. Revil , G. Pananakakis , Gérard Ghibaudo
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.154
Article dans une revue hal-00145500v1

Performance and Physics of sub-50nm Strained Si on Si1-xGex-On-Insulator (SGOI) nMOSFETs

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz
Solid-State Electronics, 2006, 50, pp.566
Article dans une revue hal-00145116v1

Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current

M. Ferrier , R. Clerc , G. Pananakakis , Gérard Ghibaudo , F. Bœuf
Jpn. J. Appl. Phys, 2006, 45, Part 1, No. 4B, pp.3088-3096
Article dans une revue hal-00145451v1

Electron mobility in quasi ballistic Si MOSFETs

J. Lusakowski , W. Knap , Y. Meziani , J.- P. Cesso , A. El Fatimy
Solid-State Electronics, 2006, 50, pp.632
Article dans une revue hal-00145502v1

Origin of Vt instabilities in high-k dielectrics: Jahn-Tellet effects or oxygen vacancies

G. Ribes , S. Bruyère , D. Roy , C. Parthasarathy , M. Muller
IEEE Transactions on Device and Materials Reliability, 2006, 6, pp.132
Article dans une revue hal-00145108v1

Degradation of floating gate memory reliability by few electron phenomena

G. Molas , D. Deleruyelle , B. Desalvo , Gérard Ghibaudo , M. Gely
IEEE Transactions on Electron Devices, 2006, 53, pp.2610
Article dans une revue hal-00145101v1

New features on the SILC in MOSFET's with ultrathin oxides

D. Bauza , Gérard Ghibaudo , F. Lime , F. Rahmoune
Symposium on the Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, H.Z. Massoud, 2005, 1-56677-430-6
Article dans une revue hal-00146162v1

Compact model for quasi ballistic transport and quantization in strained and unstrained bulk MOSFETs

M. Ferrier , R. Clerc , Gérard Ghibaudo , F. Boeuf , T. Skotnicki
ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX
Article dans une revue hal-00146183v1

Analytical model of the effects of a non-uniform distribution of stored charge on the electrical characteristics of discrete-trap memories

L. Perniola , G. Iannacone , B. Desalvo , Gérard Ghibaudo
IEEE Transactions on Nanotechnology, 2005, 4, n°3, pp.360-365
Article dans une revue hal-00145235v1

Characterization of the effective mobility by split C(V) technique in sub 0.1µm Si and SiGe PMOSFETs

K. Romanjek , F. Andrieu , T. Ernst , Gérard Ghibaudo
Solid-State Electronics, 2005, pp.0
Article dans une revue hal-00145237v1

Low frequency noise in advanced Si bulk and SOI MOSFETs

J. Jomaah , F. Balestra , Gérard Ghibaudo
Journal of Telecommunications and Information Technology, 2005, pp.24-33
Article dans une revue hal-00145241v1

Analytical model of the effects of a nonuniform distribution of stored charge on the electrical characteristics of discrete-trap nonvolatile memories

L. Perniola , S. Bernardini , G. Iannaconne , P. Masson , B. de Salvo
IEEE Transactions on Nanotechnology, 2005, 4 (3), pp.360-368. ⟨10.1109/tnano.2005.847033⟩
Article dans une revue hal-01633144v1

On the SILC mechanism in MOSFETS with ultra thin oxides

D. Bauza , Gérard Ghibaudo , F. Rahmoune
Microelectronics Reliability, 2005, vol. 45, pp.849-852
Article dans une revue hal-00145184v1

A simple approach to account for the impact of quantum confinement on the charge in semi classical montecarlo simulations of Bulk nMOSFETs

R. Hudé , D. Villanueva , R. Clerc , Gérard Ghibaudo , E. Robilliart
ULtimate Integration of Silicon (ULIS) Workshop 2005, 2005, XX, pp.XX
Article dans une revue hal-00146185v1

Modeling of the programming window distribution in multinanocrystals memories

L. Perniola , B. de Salvo , G. Ghibaudo , A. Foglio Para , G. Pananakakis
IEEE Transactions on Nanotechnology, 2003, VOL. 2, NO. 4, p. 277, (2003)
Article dans une revue hal-00477194v1
Image document

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

G. Ghibaudo , F. Balestra
Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-3-C3-11. ⟨10.1051/jp4:1996301⟩
Article dans une revue jpa-00254219v1
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Gate and Substrate Currents in Deep Submicron MOSFETs

B. Szelag , F. Balestra , G. Ghibaudo , M. Dutoit
Journal de Physique IV Proceedings, 1996, 06 (C3), pp.C3-61-C3-66. ⟨10.1051/jp4:1996309⟩
Article dans une revue jpa-00254227v1
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Modeling of self-heating effects in thin-film soi MOSFET's as a function of temperature

J. Jomaah , G. Ghibaudo , F. Balestra
Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-57-C6-62. ⟨10.1051/jp4:1994609⟩
Article dans une revue jpa-00253103v1
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Study of saturation velocity overshoot in deep submicron silicon MOSFETS from liquid helium up to room temperature

K. Rais , G. Ghibaudo , F. Balestra , M. Dutoit
Journal de Physique IV Proceedings, 1994, 04 (C6), pp.C6-19-C6-24. ⟨10.1051/jp4:1994603⟩
Article dans une revue jpa-00253097v1
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A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES

F. Balestra , L. Hafez , G. Ghibaudo
Journal de Physique Colloques, 1988, 49 (C4), pp.C4-817-C4-820. ⟨10.1051/jphyscol:19884172⟩
Article dans une revue jpa-00227914v1
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Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique

C. Christofidès , G. Ghibaudo , H. Jaouen
Revue de Physique Appliquée, 1987, 22 (6), pp.407-412. ⟨10.1051/rphysap:01987002206040700⟩
Article dans une revue jpa-00245555v1
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Etude et modélisation de la dégradation des transistors MOS submicroniques soumis à une contrainte électrique

B. Cabon-Till , G. Ghibaudo
Revue de Physique Appliquée, 1986, 21 (5), pp.305-318. ⟨10.1051/rphysap:01986002105030500⟩
Article dans une revue jpa-00245448v1
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Transport dans la couche d'inversion d'un transistor MOS. Utilité du formalisme de Kubo-Greenwood

G. Ghibaudo
Revue de Physique Appliquée, 1986, 21 (2), pp.121-129. ⟨10.1051/rphysap:01986002102012100⟩
Article dans une revue jpa-00245417v1

Influence of source-drain series resistance on MOSFET field-effect mobility

B. Cabon-Till , G. Ghibaudo , S. Cristoloveanu
Electronics Letters, 1985, 21 (11), pp.457-458. ⟨10.1049/el:19850324⟩
Article dans une revue hal-02114100v1

Role of stress on the parabolic kinetic constant for dry silicon oxidation

A. Fargeix , G. Ghibaudo
Journal of Applied Physics, 1984, 56 (2), pp.589-591. ⟨10.1063/1.333924⟩
Article dans une revue hal-02114086v1

DENSIFICATION OF THERMAL SIO2 DUE TO INTRINSIC OXIDATION STRESSING

A Fargeix , G. Ghibaudo
Journal of Physics D: Applied Physics, 1984, 17 (11), pp.2331-2336. ⟨10.1088/0022-3727/17/11/020⟩
Article dans une revue hal-02114094v1

Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩
Article dans une revue hal-02114098v1

Conductivity near a mobility edge in 2D electronic systems

G. Ghibaudo
Journal of Physics C: Solid State Physics, 1984, 17 (17), pp.3067-3072. ⟨10.1088/0022-3719/17/17/015⟩
Article dans une revue hal-02114089v1
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Le matériau silicium sur saphir en France. Revue des propriétés physico-chimiques et électriques

S. Cristoloveanu , G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1984, 19 (2), pp.161-185. ⟨10.1051/rphysap:01984001902016100⟩
Article dans une revue jpa-00245170v1

A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo
Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩
Article dans une revue hal-02114081v1

A revised analysis of dry oxidation of silicon

A. Fargeix , G. Ghibaudo , G. Kamarinos
Journal of Applied Physics, 1983, 54 (5), pp.2878-2880. ⟨10.1063/1.332286⟩
Article dans une revue hal-02114079v1

Evidence of mobility edge in degenerate SOS films

G. Ghibaudo , D Tsamakis , C Papatriantafillou , G. Kamarinos , E Rokofillou
Journal of Physics C: Solid State Physics, 1983, 16 (22), pp.4479-4485. ⟨10.1088/0022-3719/16/22/020⟩
Article dans une revue hal-02114082v1
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Analyse des propriétés de transport électrique dans le silicium sur isolant — Utilisation du pouvoir thermoélectrique

G. Ghibaudo , G. Kamarinos
Revue de Physique Appliquée, 1982, 17 (3), pp.133-143. ⟨10.1051/rphysap:01982001703013300⟩
Article dans une revue jpa-00244981v1

Thermopower of a quasi-two-dimensional electron gas

G. Ghibaudo , G. Kamarinos
physica status solidi (b), 1982, 114 (2), pp.K105-K110. ⟨10.1002/pssb.2221140259⟩
Article dans une revue hal-02114075v1
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Cryogenic electronics for quantum computing ICs: what can bring FDSOI

Mikaël Cassé , Bruna Cardoso Paz , Flavio Bergamaschi , Gérard Ghibaudo , Francis Balestra
245th ECS Meeting, The Electrochemical Society, May 2023, Boston (MA), United States. pp.149, ⟨10.1149/11101.0149ecst⟩
Communication dans un congrès hal-04246065v1
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Drain Current Variability in 2-levels Stacked Nanowire Gate All Around P-type Field Effect Transistors

Donghyun Kim , Sylvain Barraud , Gérard Ghibaudo , Christoforos Theodorou , Jae Woo Lee
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Mar 2023, Seoul, South Korea. pp.1-3, ⟨10.1109/EDTM55494.2023.10103067⟩
Communication dans un congrès hal-04305370v1
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Low temperature behavior of FD-SOI MOSFETs from micro- to nano-meter channel lengths

F. Serra Di Santa Maria , Christoforos Theodorou , Xavier Mescot , Francis Balestra , Gérard Ghibaudo
14th Workshop on Low Temperature Electronics ( WOLTE 2021), Apr 2021, Virtual, Italy. ⟨10.1109/WOLTE49037.2021.9555451⟩
Communication dans un congrès hal-03368251v1

Comprehensive Kubo-Greenwood modelling of FDSOI MOS devices down to deep cryogenic temperatures

F. Serra Di Santa Maria , L. Contamin , Mikaël Cassé , Christoforos Theodorou , Francis Balestra
EUROSOI-ULIS, Sep 2021, Caen, France
Communication dans un congrès hal-03368298v1
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“Pinch to Detect”: A Method to Increase the Number of Detectable RTN Traps in Nano-scale MOSFETs

Angeliki Tataridou , Gerard Ghibaudo , Christoforos Theodorou
2021 IEEE International Reliability Physics Symposium (IRPS), Mar 2021, Monterey, United States. ⟨10.1109/IRPS46558.2021.9405102⟩
Communication dans un congrès hal-03260919v1

Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology

R. Kom Kammeugne , Romeo Kom Kammeugne , Charles Leroux , Jacques Cluzel , Laura Vauche
2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-4, ⟨10.1109/EUROSOI-ULIS49407.2020.9365637⟩
Communication dans un congrès cea-03167130v1
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Influence of series resistance on the experimental extraction of FinFET noise parameters

Angeliki Tataridou , Gérard Ghibaudo , Christoforos Theodorou
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. pp.1-4, ⟨10.1109/ICMTS48187.2020.9107908⟩
Communication dans un congrès hal-02969736v1

Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications

Bruna Cardoso Paz , Loick Le Guevel , Mikael Casse , Gerard Billiot , Gaël Pillonnet
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS), May 2020, Edinburgh, United Kingdom. ⟨10.1109/ICMTS48187.2020.9107906⟩
Communication dans un congrès hal-02986756v1
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A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

Hung Chi Han , Christoforos Theodorou , Gérard Ghibaudo
25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Neuchatel, Switzerland
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Low-frequency Noise Characterization of Si Nanonet Field Effect Transistors

Thibauld Cazimajou , Christoforos Theodorou , Thuy Thi Thu Nguyen , Maxime Legallais , Mireille Mouis
25th International Conference on Noise and Fluctuations (ICNF), Jun 2019, Neuchâtel, Switzerland. Actes pp. 180-183
Communication dans un congrès hal-02400620v1

Low Temperature Electrical Characteristics of Si Nanonet Field-Effect Transistors

Thibauld Cazimajou , Thuy Thi Thu Nguyen , Maxime Legallais , Mireille Mouis , Céline Ternon
2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 132-133
Communication dans un congrès hal-02400540v1

On the influence of gate length on pBTI in GaN-on-Si E-mode MOSc-HEMT

Abygael Viey , William Vandendaele , Marie-Anne Jaud , Romain Gwoziecki , Alphonse Torres
2019 IEEE International Reliability Physics Symposium (IRPS), Mar 2019, Monterey, United States. pp.7A.1 session WB GaN
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Reliability and Variability of 1S1R OxRAM-OTS for High Density Crossbar Integration

D. Alfaro Robayo , D. Deleruyelle , E. Vianello , N. Castellani , L. Ciampolini
2019 IEEE International Electron Devices Meeting (IEDM), Dec 2019, San Francisco, United States. pp.35.3.1-35.3.4, ⟨10.1109/IEDM19573.2019.8993439⟩
Communication dans un congrès hal-03029486v1
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Low-frequency Noise and Random Telegraph Noise in Nanoscale Devices: Modeling and Impact on Circuit Operation

Christoforos Theodorou , Gérard Ghibaudo
25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Grenoble, France
Communication dans un congrès hal-02969721v1

Potential of nanonets for the 3D integration of biosensors on CMOS (invited)

Mireille Mouis , Maxime Legallais , Thibauld Cazimajou , Fanny Morisot , Thuy Thi Thu Nguyen
Journées Nationales Nanofils Semiconducteurs Journées Nationales Nanofils Semiconducteurs, Lyon, 13-15 Nov. 2019, Nov 2019, Lyon, France
Communication dans un congrès hal-02400730v1

Series Resistance Effects on the Back-Gate Biased Operation of Junctionless Transistors (poster)

Daeyoung Jeon , So Jeong Park , Mireille Mouis , Sylvain Barraud , Kim Gyu-Tae
2019 Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Apr 2019, Grenoble, France. Actes pp. 36-37
Communication dans un congrès hal-02400587v1

Effect of wet treatments on the electrical properties of Al2O3/GeSn MOS capacitors

B. Salem , M. A. Mahjoub , T. Haffner , Y. Guerfi , S. Labau
EMRS Fall Meeting, 2019, EMRS Fall Meeting 2019 (Varsovie, Pologne), Poland
Communication dans un congrès hal-02332929v1

Statistical analysis of CBRAM endurance

D. Alfaro Robayo , C. Nail , G. Sassine , J. F Nodin , M. C. Bernard
2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2018, Hsinchu, Taiwan. pp.115-116, ⟨10.1109/VLSI-TSA.2018.8403856⟩
Communication dans un congrès hal-02050364v1

New insights on device level TDDB at GHz speed in advanced CMOS nodes

M. Arabi , X. Federspiel , F. Cacho , M. Rafik , A. Nguyen
2018 IEEE International Integrated Reliability Workshop, Oct 2018, Fallen Leaf Lake, United States
Communication dans un congrès hal-02052398v1

Doping profile extraction in thin SOI films: Application to A2RAM

F. Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.1-4, ⟨10.1109/ULIS.2018.8354339⟩
Communication dans un congrès hal-02050322v1

Detailed analysis of frequency-dependent impedance in pseudo-MOSFET on thin SOI film

S. Sato , Y. Omura , G. Ghibaudo , L. Benea , S. Cristoloveanu
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.221-224, ⟨10.1109/ULIS.2018.8354774⟩
Communication dans un congrès hal-02007662v1

Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs

Krishna Pradeep , T. Karatsori , T. Poiroux , A. Juge , P. Scheer
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.242-245, ⟨10.1109/ESSDERC.2018.8486847⟩
Communication dans un congrès hal-02065295v1

Investigation of the role of back barrier depth and conductivity on the dynamic Ron and substrate ramping behavior of GaN Schottky diodes on silicon substrate

Thomas Lorin , W. Vandendaele , Romain Gwoziecki , C. Gillot , J. Biscarrat
20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), Sep 2018, Riga, Latvia
Communication dans un congrès hal-02050406v1

Impact of CMOS TiN Metal Gate Process on Microstructure and Its Correlation with Electrical Properties

Pushpendra Kumar , Florian Domengie , Charles Leroux , Patrice Gergaud , Gérard Ghibaudo
2018 MRS Fall Meeting & Exhibit: Symposium PM07—Plasma-Based Synthesis, Processing and Characterization of Novel Materials for Advanced Applications, M. Sankaran, D. Mariotti, T. Nozaki, C.C. Wu, Nov 2018, Boston, United States
Communication dans un congrès hal-02052429v1

Characterization and modelling of nanonet-based field-effect transistors in the presence of percolating effects

Thibauld Cazimajou , Maxime Legallais , Thuy Thi Thu Nguyen , Mireille Mouis , Céline Ternon
Nanoelectronics and Smart Systems Technologies for Future Applications (Joint SiNano-NEREID-Nanonets2Sense-Convergence Workshop at ESSDERC 2018), Sep 2018, Dresden, Germany
Communication dans un congrès hal-02401189v1

Static and Low Frequency Noise Characterization of InGaAs MOSFETs and FinFETs on Insulator

T. Karatsori , K. Bennamane , C. Theodorou , L. Czornomaz , J. Fompeyrine
2018 ESSDERC - 48th European Solid-State Device Research Conference (ESSDERC), Sep 2018, Dresden, Germany. pp.166-169, ⟨10.1109/ESSDERC.2018.8486851⟩
Communication dans un congrès hal-02002326v1
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Doping profile extraction in thin SOI films: application to A2RAM

F Tcheme Wakam , J. Lacord , M. Bawedin , S. Martinie , S. Cristoloveanu
EuroSOI-ULIS 2018, Mar 2018, Granada, Spain
Communication dans un congrès cea-02270895v1

Characterization Methodology and Physical Compact Modeling of in-Wafer Global and Local Variability

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Andre Juge , Gilles Gouget
2018 IEEE International Electron Devices Meeting (IEDM), Dec 2018, San Francisco, United States. pp.17.1.1-17.1.4, ⟨10.1109/IEDM.2018.8614589⟩
Communication dans un congrès hal-02050415v1

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)

A. Laurent , X. Garros , S. Barraud , J. Pelloux-Prayer , M. Cassé
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingame, United States. pp.6F.3-1-6F.3-6, ⟨10.1109/IRPS.2018.8353647⟩
Communication dans un congrès hal-02050279v1

Analysis and modelling of wafer level process variability in advanced FD-SOI devices using split C-V and gate current data

Krishna Pradeep , Theano Karatsori , Thierry Poiroux , Andre Juge , Patrick Scheer
Modeling of Systems and Parameter Extraction Working (MOS-AK), ESSDERC/ESSCIRC, Sep 2018, Dresden, Germany
Communication dans un congrès hal-02051931v1

Finite element simulation of 2D percolating silicon-nanonet field-effect transistor

T. Cazimajou , M. Mouis , G. Ghibaudo
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.165-168, ⟨10.1109/ULIS.2018.8354760⟩
Communication dans un congrès hal-02016613v1

Innovative tunnel FET architectures

Carlos Diaz Llorente , Sébastien Martinie , Sorin Cristoloveanu , Jean-Pierre Colinge , Cyrille Le Royer
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.25-28, ⟨10.1109/ULIS.2018.8354725⟩
Communication dans un congrès hal-02007301v1

Experimental and theoretical investigation of RRAM endurance statistical behavior

D. Alfaro Robayo , G. Sassine , Quentin Rafhay , Gérard Ghibaudo , Gabriel Molas
49th IEEE Semiconductor Interface Specialists Conference (SISC), IEEE, Dec 2018, San Diego, United States. pp.13.2
Communication dans un congrès hal-02052290v1

Stability and in depth characterization of low-voltage organic thin film transistors based on low-k/high-k bilayer dielectric

Alexandre Gaïtis , Micaël Charbonneau , Gérard Ghibaudo , R. Coppard , Christophe Serbutoviez
Innovations in large-Area Electronics Conference (InnoLAE), Jan 2018, Hinxton, United Kingdom
Communication dans un congrès hal-02051882v1

A self-Contained Defect-Aware Module for Realistic Simulations of LFN, RTN and Time-Dependent Variability in FD-SOI Devices and Circuits

Christoforos Theodorou , Gérard Ghibaudo
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.20.3, ⟨10.1109/S3S.2018.8640191⟩
Communication dans un congrès hal-02010259v1

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Gérard Ghibaudo , Georges Pananakakis
International Workshop on Semi-conducting Nanometerials for Health, Environment and Security Applications, Nov 2018, Grenoble, France
Communication dans un congrès hal-02052299v1

Performance and Reliability of a Fully Integrated 3D Sequential Technology

A. Tsiara , X. Garros , L. Brunet , P. Batude , C. Fenouillet-Beranger
2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. pp.75-76, ⟨10.1109/VLSIT.2018.8510625⟩
Communication dans un congrès hal-02050384v1

Low-frequency noise in surface-treated AlGaN/GaN HFETs

Ki-Sik Im , Jun-Hyeok Lee , Jung-Hee Lee , Christoforos Theodorou , Gérard Ghibaudo
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Mar 2018, Granada, Spain. pp.77-80, ⟨10.1109/ULIS.2018.8354738⟩
Communication dans un congrès hal-02002314v1

Impact of low-temperature CoolcubeTM process on the performance of FDSOI Tunnel FETs

C. Diaz Llorente , Jean-Pierre Colinge , Maud Vinet , Christoforos Theodorou , Sorin Cristoloveanu,
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2018, San Francisco, United States. pp.5.4, ⟨10.1109/S3S.2018.8640190⟩
Communication dans un congrès hal-02010233v1

Optimisation of the catalytic system towards well-defined donor-acceptor semiconductor polymers

Theodoros Oproglidis , Theano Karatsori , Sylvain Barraud , Gérard Ghibaudo , Charalabos Dimitriadis
European Congress and Exhibit on Advanced Materials and Processes (EUROMAT 2017), symposium C.11 Processes and Materials for Nanoelectronics, D. Tsoukalas, M. Fanciulli and A. Claverie, Sep 2017, Thessalonique, Greece
Communication dans un congrès hal-02068513v1

Statistical low-frequency noise characterization in sub-15 nm Si/SiGe nanowire Trigate pMOSFETs

Christoforos Theodorou , Romain Lavieville , Theano Karatsori , Sylvain Barraud , Charalabos Dimitriadis
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.141-145, ⟨10.1109/ICMTS.2017.7954284⟩
Communication dans un congrès hal-02002297v1

Ultra-low power 1T-DRAM in FDSOI technology

H. El Dirani , M.S. Parihar , J. Lacord , S. Martinie , J-Ch. Barbe
20th International Conference on Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Communication dans un congrès hal-02071682v1

Electrical characterization of percolating silicon nanonet FETs for sensing applications

T. Cazimajou , M. Legallais , M. Mouis , C. Ternon , B. Salem
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.23-26, ⟨10.1109/ULIS.2017.7962591⟩
Communication dans un congrès hal-01929333v1

First SOI Tunnel FETs with low-temperature process

C. Diaz Llorente , C. Le Royer , C-M. Lu , P. Batude , C. Fenouillet-Beranger
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.9-12, ⟨10.1109/ULIS.2017.7962579⟩
Communication dans un congrès hal-02007188v1
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Precise EOT regrowth extraction enabling performance analysis of Low Temperature Extension First devices

Jessy Micout , Quentin Rafhay , Xavier Garros , Mikael Cassé , Jean Coignus
2017 ESSDERC - 47th European Solid-State Device Research Conference, Sep 2017, Leuven, Belgium. pp.144-147, ⟨10.1109/ESSDERC.2017.8066612⟩
Communication dans un congrès cea-01525266v1

Thermal effects in 3D sequential technology

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.7.6.1-7.6.4, ⟨10.1109/IEDM.2017.8268348⟩
Communication dans un congrès hal-02050229v1

Impact of access resistance on New-Y function methodology for MOSFET parameter extraction in advanced FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.68-72, ⟨10.1109/ICMTS.2017.7954269⟩
Communication dans un congrès hal-01959125v1

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori , M. Pastorek , C.G Theodorou , A. Fadjie , Nicolas Wichmann
2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.105-108, ⟨10.1109/ULIS.2017.7962613⟩
Communication dans un congrès hal-02050212v1

Self-heating assessment and cold current extraction in FDSOI MOSFETs

K. Triantopoulos , M. Cassé , L. Brunet , P. Batude , C. Fenouillet-Beranger
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.6.4, ⟨10.1109/S3S.2017.8309239⟩
Communication dans un congrès hal-02050233v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT wafer adapted from four-point probe technique

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Jacques Cluzel
20th Conference of Insulating Films on Semiconductors (INFOS 2017), Jun 2017, Potsdam, Germany
Communication dans un congrès hal-02009848v1

Sensitivity analysis of C-V global variability for 28 nm FD-SOI

Krishna Pradeep , Thierry Poiroux , Patrick Scheer , Gilles Gouget , Andre Juge
EUROSOI-ULIS - 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Apr 2017, Athens, Greece. pp.132-135, ⟨10.1109/ULIS.2017.7962582⟩
Communication dans un congrès hal-02050213v1

Systematic evaluation of the split C-V based parameter extraction methodologies for 28 nm FD-SOI

Krishna Pradeep , Gilles Gouget , Thierry Poiroux , Patrick Scheer , Andre Juge
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.59-63, ⟨10.1109/ICMTS.2017.7954267⟩
Communication dans un congrès hal-02050209v1

Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs

Pushpendra Kumar , Charles Leroux , Alain Toffoli , Giovanni Romano , Xavier Garros
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.2B-2.1-2B-2.7, ⟨10.1109/IRPS.2017.7936258⟩
Communication dans un congrès hal-02050203v1

Novel C-V measurements based method for the extraction of GaN buffer layer residual doping level in HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Charles Charles , Gilles Reimbold
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.154-157, ⟨10.1109/ICMTS.2017.7954287⟩
Communication dans un congrès hal-02009829v1

Growth and integration of group IV nanowires for Tunnel FET devices

B. Salem , V. Brouzet , P. Periwal , F. Bassani , P. Gentile
Collaborative Conference on Materials Research (CCMR 2017), Jun 2017, Jeju island, South Korea
Communication dans un congrès hal-01891328v1

New insight on the geometry dependence of BTI in 3D technologies based on experiments and modeling

Xavier Garros , Antoine Laurent , Sylvain Barraud , J. Lacord , Olivier Faynot
2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T134-T135, ⟨10.23919/VLSIT.2017.7998152⟩
Communication dans un congrès hal-02050216v1

(Invited) Dipoles in Gate-Stack/FDSOI Structure

Gilles Reimbold , Charles Leroux , Carlos Suarez Segovia , Pushpendra Kumar , Xavier Garros
232nd ECS Meeting: 15th Symposium on Seminconductors, Dielectrics and Metals for Nanoelectronics, D. Misra, S. De Gendt, M. Houssa K. Kita and D. Landheer, Oct 2017, Washington DC, United States
Communication dans un congrès hal-02051924v1

Comparison of RTN and TDDS methods for trap extraction in trigate nanowires

A. Tsiara , X. Garros , A. Vernhet , S. Barraud , O. Faynot
2017 IEEE International Reliability Physics Symposium (IRPS), Apr 2017, Monterey, United States. pp.3E-4.1-3E-4.6, ⟨10.1109/IRPS.2017.7936297⟩
Communication dans un congrès hal-02050205v1

A microsecond time resolved current collapse test setup dedicated to GaN-based Schottky diode characterization

T. Lorin , W. van den Daele , C. Gillot , M. Charles , J. Biscarrat
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.150-153, ⟨10.1109/ICMTS.2017.7954286⟩
Communication dans un congrès hal-02050207v1

High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

J. Micout , V. Lapras , P. Batude , C. Fenouillet-Beranger , J. Lacord
2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. pp.32.2.1-32.2.4, ⟨10.1109/IEDM.2017.8268484⟩
Communication dans un congrès hal-01959097v1

Towards 500°C SPER activated devices for 3D sequential integration

J. Micout , B. Sklenard , P. Batude , Rémy Berthelon , Quentin Rafhay
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, CA, United States. pp.24.3, ⟨10.1109/S3S.2017.8309220⟩
Communication dans un congrès hal-01959113v1

Low temperature measurements on organic thin film transistors

Clara Haddad , Stéphanie Jacob , Micaël Charbonneau , Xavier Mescot , Amélie Revaux
2017 E-MRS Spring Meeting: Symposium L:New materials for organic electronics: from synthesis to processing, characterization and device physics, C. Muller, E. Von Hauf, M. Caironi, M. Sommer, May 2017, Strasbourg, France
Communication dans un congrès hal-02072323v1

Impact of strain on access resistance in planar and nanowire CMOS devices

Rémy Berthelon , F. Andneu , F. Triozon , M. Cassé , L. Bourdet
2017 IEEE Symposium on VLSI Technology, Jun 2017, Kyoto, Japan. pp.T224-T225, ⟨10.23919/VLSIT.2017.7998180⟩
Communication dans un congrès hal-02050220v1

Reliability analysis on low temperature gate stack process steps for 3D sequential integration

A. Tsiara , X. Garros , C.-M.V. Lu , C. Fenouillet-Beranger , P. Batude
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.24.2, ⟨10.1109/S3S.2017.8309219⟩
Communication dans un congrès hal-02050231v1

Statistical characterization and modeling of drain current local and global variability in 14 nm bulk FinFETs

T. Karatsori , C. Theodorou , R. Lavieville , T. Chiarella , J. Mitard
2017 International Conference of Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. pp.41-45, ⟨10.1109/ICMTS.2017.7954263⟩
Communication dans un congrès hal-02002304v1

Assessment of GeSn surface wet treatment for prior to Atomic Layer Deposition of High-k Dielectrics

M.A. Mahjoub , T. Haffner , J. Aubin , J.M. Hartmann , G. Ghibaudo
2017 MRS Fall Meeting & Exhibit: Symposium PM03 : Interfaces and Interface Engineering in Inorganic Materials, Y. Chen, E. Bitzek, M.T. Perez Prado, D. Rowenhorst, Nov 2017, Boston, United States
Communication dans un congrès hal-01929247v1

Electrical characterization of FDSOI CMOS devices

G. Ghibaudo
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.135-141, ⟨10.1109/ESSDERC.2016.7599606⟩
Communication dans un congrès hal-02050197v1

Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs

R. Lavieville , T. Karatsori , C. Theodorou , S. Barraud , C. Dimitriadis
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.142-145, ⟨10.1109/ESSDERC.2016.7599607⟩
Communication dans un congrès hal-02002267v1

Characterization and modeling of NBTI permanent and recoverable components variability

D. Nouguier , G. Ghibaudo , X. Federspiel , M. Rafik , D. Roy
2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.XT-08-1-XT-08-6, ⟨10.1109/IRPS.2016.7574650⟩
Communication dans un congrès hal-02050196v1

Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating

A. Laurent , X. Garros , S. Barraud , G. Mariniello , G. Reimbold
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. pp.39-40, ⟨10.1109/VLSIT.2016.7573374⟩
Communication dans un congrès hal-02050194v1

Doping Solutions for Advanced CMOS high-k / metal Gate Engineering

Gilles Reimbold , C. Suarez-Segovia , Charles Leroux , Florian Domengie , Philippe Blaise
BIT’s 2nd Annual World Congress of Smart Materials-2016, Mar 2016, Singapore, Singapore
Communication dans un congrès hal-02051782v1

Hot carrier stress: Aging modeling and analysis of defect location

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier
2016 IEEE International Reliability Physics Symposium (IRPS), Apr 2016, Pasadena, United States. pp.5A-4-1-5A-4-6, ⟨10.1109/IRPS.2016.7574546⟩
Communication dans un congrès hal-02050195v1

RAPIDO Testing and Modeling of Assisted Write and Read Operations for SRAMs

Joseph Nguyen , David Turgis , David Bonciani , Brice Lhomme , Yann Carminati
2016 IEEE 25th North Atlantic Test Workshop (NATW), May 2016, Providence, United States. pp.28-33, ⟨10.1109/NATW.2016.14⟩
Communication dans un congrès hal-02050193v1

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

C. Nail , G. Molas , P. Blaise , G. Piccolboni , B. Sklenard
2016 IEEE International Electron Devices Meeting (IEDM), Dec 2016, San Francisco, United States. pp.4.5.1-4.5.4, ⟨10.1109/IEDM.2016.7838346⟩
Communication dans un congrès hal-01882789v1

Robust EOT and effective work function extraction for 14 nm node FDSOI technology

B. Mohamad , C. Leroux , D. Rideau , M. Haond , G. Reimbold
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.135-138, ⟨10.1109/ULIS.2016.7440071⟩
Communication dans un congrès hal-02050084v1

Impact of low thermal processes on reliability of HK/MG stacks

Artemisia Tsiara , Xavier Garros , C-M. V. Lu , Claire Fenouillet-Beranger , Gérard Ghibaudo
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02051859v1

Noise-induced dynamic variability in nano-scale CMOS SRAM cells

Christoforos Theodorou , Mouenes Fadlallah , Xavier Garros , Charalabos Dimitriadis , Gérard Ghibaudo
2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.256-259, ⟨10.1109/ESSDERC.2016.7599634⟩
Communication dans un congrès hal-02002272v1

RAPIDO Testing of Assisted Write and Read operations for Ultra-Low Power SRAMs

Joseph Nguyen , D. Turgis , David Bonciani , Brice Lhomme , Yann Carminati
W07 International Workshop on Emerging Memory Solutions, Mar 2016, Dresden, Germany
Communication dans un congrès hal-02051768v1

Challenges in electrical characterization of nano devices

Gérard Ghibaudo
NEREID Domain Workshop: Task "Nanoscale FETs", F. Balestra and Anda Mocuta, Sinano Summer School 2016, Oct 2016, Bertinoro, Italy
Communication dans un congrès hal-02078235v1

MBE-grown oxides-based resistive switching memristive devices

Marie Minvielle , N. Najjari , G. Sassine , C. Botella , Gérard Ghibaudo
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02051846v1

Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives

G. Piccolboni , M. Parise , G. Molas , A. Levisse , Jean-Michel Portal
2016 IEEE 8th International Memory Workshop (IMW), May 2016, Paris, France. ⟨10.1109/IMW.2016.7495296⟩
Communication dans un congrès hal-01451884v1

High performance CMOS FDSOI devices activated at low temperature

L. Pasini , P. Batude , J. Lacord , M. Cassé , B. Mathieu
2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩
Communication dans un congrès hal-01730659v1

Improved analysis of NBTI relaxation behavior based on fast I–V measurement

D. Nouguier , C. Ndiaye , G. Ghibaudo , X. Federspiel , M. Rafik
2016 IEEE International Integrated Reliability Workshop (IIRW), Oct 2016, South Lake Tahoe, United States. pp.83-86, ⟨10.1109/IIRW.2016.7904908⟩
Communication dans un congrès hal-02050198v1

Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs

R. Lavieville , C. Le Royer , S. Barraud , G. Ghibaudo
12th International Workshop on Low Temperature Electronics (WOLTE-12), Sep 2016, Tempe, United States
Communication dans un congrès hal-02072793v1

High temperature investigation of electron transport properties in 2DEG AlGaN/AlN/GaN MIS-HEMT

Iliass Nifa , Charles Leroux , Alphonse Torres , Matthew Charles , Denis Blachier
19th Workshop on Dielectrics in Microelectronics (WoDIM), Jun 2016, Catania, Italy
Communication dans un congrès hal-02009860v1

New access resistance extraction methodology for 14nm FD-SOI technology

Jean-Baptiste Henry , Antoine Cros , Julien Rosa , Quentin Rafhay , Gérard Ghibaudo
2016 International Conference on Microelectronic Test Structures (ICMTS), Mar 2016, Yokohama, Japan. pp.70-75, ⟨10.1109/ICMTS.2016.7476177⟩
Communication dans un congrès hal-01959130v1

Drain current local variability from linear to saturation region in 28nm bulk NMOSFETs

T. Karatsori , C. Theodorou , S. Haendler , C. Dimitriadis , G. Ghibaudo
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2016, Vienna, Austria. pp.92-95, ⟨10.1109/ULIS.2016.7440060⟩
Communication dans un congrès hal-02002291v1

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

J. Lehmann , C. Leroux , G. Reimbold , M. Charles , A. Torres
2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.163-168, ⟨10.1109/ICMTS.2015.7106134⟩
Communication dans un congrès hal-02009889v1

Analysis of the SET and RESET states drift of phase-change memories by low frequency noise measurements

S. Souiki-Figuigui , V. Sousa , G. Ghibaudo , G. Navarro , M. Coue
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.MY.1.1-MY.1.5, ⟨10.1109/IRPS.2015.7112807⟩
Communication dans un congrès hal-02049588v1

Impact of short-channel effects on velocity overshoot in MOSFET

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. pp.521-524, ⟨10.1109/NEWCAS.2015.7182061⟩
Communication dans un congrès hal-02049733v1

Effective work function modulation by sacrificial aluminium on HfON-based 14nm devices

Carlos Suarez-Segovia , Charles Leroux , P. Caubet , Florian Domengie , Gilles Reimbold
19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.175-176
Communication dans un congrès hal-02051742v1

Advanced 1T1R test vehicle for RRAM nanosecond-range switching-time resolution and reliability assessment

Clement Nguyen , Carlo Cagli , Elisa Vianello , Alain Persico , Gabriel Molas
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, CA, United States. pp.17-20, ⟨10.1109/IIRW.2015.7437059⟩
Communication dans un congrès hal-01959140v1

Hot carrier degradation modeling of short-channel n-FinFETs

I. Messaris , N. Fasarakis , T. Karatsori , A. Tsormpatzoglou , G. Ghibaudo
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.183-184, ⟨10.1109/DRC.2015.7175617⟩
Communication dans un congrès hal-02049708v1

High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator

L. Pasini , P. Batude , M. Cassé , B. Mathieu , B. Sklenard
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T50-T51, ⟨10.1109/VLSIT.2015.7223699⟩
Communication dans un congrès hal-02049770v1

Investigation of Ta2O5-Based Hybrid OXRAM-CBRAM Including a Ti Layer to Generate Oxygen Vacancies.

G. Piccolboni , A. El Kacimi , G. Molas , A. Marty , R. Gassilloud
EMRS, 2015, 2015, Lille, France
Communication dans un congrès hal-01877911v1

New compact model for performance and process variability assessment in 14nm FDSOI CMOS technology

Y. Denis , F. Monsieur , G. Ghibaudo , J. Mazurier , E. Josse
2015 International Conference on Microelectronic Test Structures (ICMTS), Mar 2015, Tempe, United States. pp.59-64, ⟨10.1109/ICMTS.2015.7106109⟩
Communication dans un congrès hal-02049575v1

CMOS roadmap analysis from the perspective of III-V technology using MASTAR

Gaspard Hiblot , Quentin Rafhay , Gabriel Mugny , Gérard Ghibaudo , Frédéric Boeuf
2015 Silicon Nanoelectronics Workshop (SNW), Jun 2015, Kyoto, Japan. pp.115-116
Communication dans un congrès hal-02049782v1

Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTAR

Gaspard Hiblot , Quentin Rafhay , Loic Gaben , Gérard Ghibaudo , Frédéric Boeuf
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.242-245, ⟨10.1109/ESSDERC.2015.7324759⟩
Communication dans un congrès hal-01959154v1

Impact of the W scaling on bias temperature instability in nanowire transistors

A. Laurent , Xavier Garros , Sylvain Barraud , Gilles Reimbold , E. Vincent
19th Conference on Insulating Films on semiconductors (INFOS), Jun 2015, Udine, Italy. pp.243-244
Communication dans un congrès hal-02051750v1

Electrical Characterization of Advanced CMOS devices

Gérard Ghibaudo
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051772v1

Development of analytical compact drain current model for28 nm FDSOI MOSFETs

T.A. Karatsori , Andreas Tsormpatzoglou , Christoforos Theodorou , E.G. Ioannidis , Sebastien Haendler
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051762v1

3DVLSI with CoolCube process: An alternative path to scaling

P. Batude , C. Fenouillet-Beranger , L. Pasini , V. Lu , F. Deprat
2015 IEEE Symposium on VLSI Technology, Jun 2015, Kyoto, Japan. pp.T48-T49, ⟨10.1109/VLSIT.2015.7223698⟩
Communication dans un congrès hal-02049760v1

Comparison between recoverable and permanent NBTI variability components

D. Nouguier , M. Rafik , X. Federspiel , G. Ghibaudo
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.87-90, ⟨10.1109/IIRW.2015.7437074⟩
Communication dans un congrès hal-02049829v1

Full front and back split C-V characterization of CMOS devices from 14nm node FDSOI technology

B. Mohamad , G. Ghibaudo , C. Leroux , E. Josse , G. Reimbold
2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2015, Rohnert Park, United States. pp.9a.4, ⟨10.1109/S3S.2015.7333546⟩
Communication dans un congrès hal-02049810v1

Low-frequency noise in bare SOI wafers: Experiments and model

Luca Pirro , Irina Ionica , Sorin Cristoloveanu , Gérard Ghibaudo
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.286-289, ⟨10.1109/ESSDERC.2015.7324770⟩
Communication dans un congrès hal-02004194v1

Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution

G. Torrente , X. Federspiel , D. Rideau , F. Monsieur , C. Tavernier
2015 IEEE International Integrated Reliability Workshop (IIRW), Oct 2015, South Lake Tahoe, United States. pp.134-137, ⟨10.1109/IIRW.2015.7437086⟩
Communication dans un congrès hal-02049860v1

Low frequency noise statistical characterization of 14nm FDSOI technology node

E. Ioannidis , C. Theodorou , S. Haendler , M.-K. Joo , E. Josse
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.181-184, ⟨10.1109/ULIS.2015.7063803⟩
Communication dans un congrès hal-02002261v1

Fabrication and Electrical Characterization of Si and Si/SiGe Nanowires Tunnel Field-Effect-Transistor

Virginie Brouzet , Bassem Salem , P Periwal. , Guillaume Rosaz , Thierry Baron
4èmes Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication (JNTE 2015), Nov 2015, Ecully, France
Communication dans un congrès hal-02072677v1
Image document

Investigation of the potentialities of Vertical Resistive RAM (VRRAM) for neuromorphic applications

G. Piccolboni , G. Molas , M. Portal , R. Coquand , Marc Bocquet
2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.17.2.1-17.2.4, ⟨10.1109/IEDM.2015.7409717⟩
Communication dans un congrès hal-01804658v1

On the impact of OxRAM-based synapses variability on convolutional neural networks performance

D. Garbin , E. Vianello , O. Bichler , M. Azzaz , Q. Rafhay
2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15), Jul 2015, Boston, MA, United States. pp.193-198, ⟨10.1109/NANOARCH.2015.7180611⟩
Communication dans un congrès cea-01839851v1

Full front and back gate voltage range method for the parameter extraction of advanced FDSOI CMOS devices

T. Karatsori , C. Theodorou , E. Ioannidis , S. Haendler , E. Josse
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.115-116, ⟨10.1109/DRC.2015.7175582⟩
Communication dans un congrès hal-02001968v1

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.5A.5.1-5A.5.5, ⟨10.1109/IRPS.2015.7112740⟩
Communication dans un congrès hal-02049599v1

New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Emmanuel Josse
2015 IEEE International Reliability Physics Symposium (IRPS), Apr 2015, Monterey, United States. pp.XT.1.1-XT.1.6, ⟨10.1109/IRPS.2015.7112833⟩
Communication dans un congrès hal-02002118v1

Quantum simulation of mobility and current enhancement in sub-14nm strained SiGe FD-pMOSFETs

Marco G. Pala , Barbara de Salvo , P. Morin , Gérard Ghibaudo
GRDi CNRS Mecano: Mechanical Issues for Advanced Electron Devices Workshop, M. Mouis, O. Thomas, E. Zschech, C. Paitel, Jun 2015, Grenoble, France
Communication dans un congrès hal-02068476v1

Influence of epitaxy and gate deposition process on Ron resistance of AlGaN/GaN-on-Si HEMT

J. Lehmann , C. Leroux , M. Charles , A. Torres , E. Morvan
2015 27th IEEE International Symposium on Power Semiconductor Devices & IC's (ISPSD), May 2015, Hong Kong, China. pp.261-264, ⟨10.1109/ISPSD.2015.7123439⟩
Communication dans un congrès hal-02009897v1

Quasi-static capacitance measurements in pseudo-MOSFET configuration for Dit extraction in SOI wafers

L. Pirro , I. Ionica , X. Mescot , S. Cristoloveanu , G. Ghibaudo
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.249-252, ⟨10.1109/ULIS.2015.7063820⟩
Communication dans un congrès hal-02004087v1

Analysis of the Resistance Drift of Polycrystalline Phase-Change Materials by Low Frequency Noise Measurementtration

Sarra Souiki Souiki-Figuigui , Véronique Sousa , Gérard Ghibaudo , Gabriele Navarro , Martin Coué
2015 MRS Spring Meeting & Exhibit: Symposium Y: Phase-Change Materials for Data Storage, Cognitive Processing and Photonics Applications, R. Agarwal, H.Y. Cheng, R. Mazzarello, R. Simpson, Apr 2015, San Francisco, United States
Communication dans un congrès cea-02051740v1

Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices

Carlos Suarez-Segovia , Charles Leroux , Florian Domengie , Karen Dabertrand , Vincent Joseph
2015 ESSDERC - 45th European Solid-State Device Research Conference, Sep 2015, Graz, Austria. pp.246-249, ⟨10.1109/ESSDERC.2015.7324760⟩
Communication dans un congrès hal-02049792v1

Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit applications

I. Messaris , T.A. Karatsori , Nikolaos Fasarakis , S. Nikolaidis , Gérard Ghibaudo
4th International Conference on Modern Circuits and Systems Technologies (MOCAST), organized by the FP7 Marie Curie IAPP Project FTK, the Greek National projects NANOTRIM and NANOMOS and the Micro & Nano Scientific Society, May 2015, Thessaloniki, Greece
Communication dans un congrès hal-02051771v1

Modeling of OxRAM variability from low to high resistance state using a stochastic trap assisted tunneling-based resistor network

Daniele Garbin , Quentin Rafhay , Elisa Vianello , Simon Jeannot , Philippe Candelier
2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Jan 2015, Bologna, Italy. pp.125, ⟨10.1109/ULIS.2015.7063789⟩
Communication dans un congrès hal-01959186v1

Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs

T. Karatsori , C. Theodorou , S. Haendler , N. Planes , G. Ghibaudo
2015 73rd Annual Device Research Conference (DRC), Jun 2015, Columbus, United States. pp.163-164, ⟨10.1109/DRC.2015.7175607⟩
Communication dans un congrès hal-02001979v1

Fabrication and electrical characterisations of Si/Si1-xGex nanowires Tunnel FET device : impact of Germanium concentration

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani
2015 MRS Spring Meeting & Exhibit: Symposium S: Semiconductor Nanowires and Devices for Advanced Applications, J. Arbiol, K. Dick Thelander, M. Filler, A. Fontcuberta, Q. Xiong, Apr 2015, San Francisco, United States
Communication dans un congrès cea-01998244v1

Low temperature characterization of mobility in advanced FD-SOI n-MOSFETs under interface coupling conditions

M. Shin , Minghua Shi , Mouis M. , A. Cros , Josse E.
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.61-64, ⟨10.1109/ULIS.2014.6813906⟩
Communication dans un congrès hal-01182148v1

Low temperature characterization of 14nm FDSOI CMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.29-32, ⟨10.1109/WOLTE.2014.6881018⟩
Communication dans un congrès hal-02049067v1

Mismatch trends in 20nm gate-last bulk CMOS technology

Lama Rahhal , Aurélie Bajolet , Jean-Philippe Manceau , Julien Rosa , Stéphane Ricq
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.133-136, ⟨10.1109/ULIS.2014.6813916⟩
Communication dans un congrès hal-02048981v1

Surface effects on split C-V measurements on SOI wafers

L. Pirro , Ionica I. , Gérard Ghibaudo , Sorin Cristoloveanu,
10th EUROSOI Workshop, Jan 2014, Tarragone, Spain
Communication dans un congrès hal-01182138v1

nFET FDSOI activated by low temperature solid phase epitaxial regrowth: Optimization guidelines

L. Pasini , P. Batude , M. Cassé , L. Brunet , P. Rivallin
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.3, ⟨10.1109/S3S.2014.7028214⟩
Communication dans un congrès hal-02049393v1

A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies

B. Desalvo , P. Morin , M. Pala , G. Ghibaudo , O. Rozeau
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.7.2.1-7.2.4, ⟨10.1109/IEDM.2014.7047002⟩
Communication dans un congrès hal-02049421v1

Variability analysis — Prediction method for nanoscale triple gate FinFETs

D. Tassis , I. Messaris , N. Fasarakis , S. Nikolaidis , G. Ghibaudo
2014 IEEE 29th International Conference on Microelectronics (MIEL), May 2014, Belgrade, Serbia. pp.99-102, ⟨10.1109/MIEL.2014.6842095⟩
Communication dans un congrès hal-02049021v1

Insights in accesses optimization for nFET low temperature Fully Depleted Silicon On Insulator devices

L. Pasini , B. Sklenard , P. Batude , M. Cassé , P. Rivallin
2014 14th International Workshop on Junction Technology (IWJT), May 2014, Shanghai, China. pp.33-38
Communication dans un congrès hal-02049010v1

Resistive switching of HfO2-based metal-insulator-metal devices

Marie Minvielle , Romain Bachelet , Guillaume Saint-Girons , G. Ghibaudo , F. Alibart
Colloque de Recherche Inter Écoles Centrales (CRIEC 2014), Jun 2014, Ecully, France
Communication dans un congrès hal-01489831v1

UTBB FD-SOI front- and back-gate coupling aware random telegraph signal impact analysis on a 6T SRAM

K.C Akyel , L. Ciampolini , O. Thomas , D. Turgis , G. Ghibaudo
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.7a.3, ⟨10.1109/S3S.2014.7028222⟩
Communication dans un congrès hal-02049387v1

Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs

E. Ioannidis , S. Haendler , C. Theodorou , N. Planes , C. Dimitriadis
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.214-217, ⟨10.1109/ESSDERC.2014.6948798⟩
Communication dans un congrès hal-02001909v1

A new approach for modeling drain current process variability applied to FDSOI technology

Y. Denis , F. Monsieur , D. Petit , C. Tavernier , H. Jaouen
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.93-96, ⟨10.1109/ULIS.2014.6813924⟩
Communication dans un congrès hal-02048983v1

The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies

F. Monsieur , Y. Denis , D. Rideau , V. Quenette , G. Gouget
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.254-257, ⟨10.1109/ESSDERC.2014.6948808⟩
Communication dans un congrès hal-02049192v1

Assessment of technological device parameters by low-frequency noise investigation in SOI omega-gate nanowire NMOS FETs

M. Koyama , M. Cassé , S. Barraud , G. Ghibaudo , H. Iwai
2014 15th International Conference on Ultimate Integration on Silicon (ULIS), Apr 2014, Stockholm, Sweden. pp.57-60, ⟨10.1109/ULIS.2014.6813905⟩
Communication dans un congrès hal-02048986v1

Influence of Technological and Geometrical Parameters on Low-Frequency Noise in SOI Omega-Gate Nanowire NMOSFETs

Koyama M. , Cassé M. , Coquand R. , Barraud S. , Gérard Ghibaudo
2014 International Symposium on VLSI Technology, Systems and Apllications, Proceedings of Technical Program (2014 VLSI-TSA), Apr 2014, Taiwan, China. pp.54-55, ⟨10.1109/VLSI-TSA.2014.6839653⟩
Communication dans un congrès hal-01182167v1

(Invited) In Depth Study of Ge Impact on Advanced SiGe PMOS Transistors

A. Soussou , M. Cassé , G. Reimbold , C. Leroux , F. Andrieu
226th ECS and SMEQ Joint International Meeting: 12th Symposium on Semiconductors, Dielectrics and Metal for Nanoelectronics, S. Kar, M. Houssa, H. Jagannathan, K. Kita, D. Landheer, D. Misra and S. Van Elshocht, Oct 2014, Cacun, Mexico
Communication dans un congrès hal-02051731v1

Investigation of HfO2/Ti based vertical RRAM - Performances and variability

G. Piccolboni , G. Molas , C. Carabasse , J. F Nodin , C. Pellissier
2014 14th Non-Volatile Memory Technology Symposium (NVMTS), Oct 2014, Jeju Island, South Korea. pp.134-138, ⟨10.1109/NVMTS.2014.7060867⟩
Communication dans un congrès hal-02049437v1

Fabrication and Electrical Characterization of tunnel FET Devices Based on Si/SiGe Heterojunction PIN nanowires

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Thierry Baron , Franck Bassani
2014 E-MRS Fall Meeting: Symposium B: Materials for Optics and Optoelectronics, G. Ben Assayag, M. Perego and P. Pellegrino, Sep 2014, Warsaw, Poland
Communication dans un congrès cea-02067075v1

Chemically improved high performance solution processed indium gallium zinc oxide thin-film transistors

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
2014 E-MRS Spring Meeting Symposium I - Solution processing and properties of functional oxide thin films and nanostructures, J.E. ten Elshof, N. Mestres, A. Hardy, B. Malic, G.L.Brennecka, May 2014, Lille, France
Communication dans un congrès hal-00957798v1

Experimental and theoretical understanding of Forming, SET and RESET operations in Conductive Bridge RAM (CBRAM) for memory stack optimization

J. Guy , G. Molas , P. Blaise , C. Carabasse , M. Bernard
2014 IEEE International Electron Devices Meeting (IEDM), Dec 2014, San Francisco, United States. pp.6.5.1-6.5.4, ⟨10.1109/IEDM.2014.7046997⟩
Communication dans un congrès hal-02049407v1

Cascode configuration as a substitute to LDE MOSFET for improved electrical mismatch performance

Lama Rahhal , Guillaume Bertrand , Aurélie Bajolet , Julien Rosa , Gérard Ghibaudo
2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.238-242, ⟨10.1109/ICMTS.2014.6841499⟩
Communication dans un congrès hal-02049001v1

Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOI

Kaya Can Akyel , Lorenzo Ciampolini , Olivier Thomas , David Turgis , Gérard Ghibaudo
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.94-97, ⟨10.1109/ESSDERC.2014.6948766⟩
Communication dans un congrès hal-02048975v1

Split-CV for pseudo-MOSFET characterization: Experimental setups and associated parameter extraction methods

L. Pirro , I. Ionica , G. Ghibaudo , S. Cristoloveanu
2014 International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.14-19, ⟨10.1109/ICMTS.2014.6841461⟩
Communication dans un congrès hal-02003797v1

Frequency dependence of TDDB & PBTI with OTF monitoring methodology in high-k/metal gate stacks

A. Bezza , M. Rafik , D. Roy , X. Federspiel , P. Mora
2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.GD.6.1-GD.6.4, ⟨10.1109/IRPS.2014.6861149⟩
Communication dans un congrès hal-02049042v1

Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regime

Gaspard Hiblot , Quentin Rafhay , Frédéric Boeuf , Gérard Ghibaudo
2014 ESSDERC - 44th European Solid-State Device Research Conference, Sep 2014, Venice, Italy. pp.286-289, ⟨10.1109/ESSDERC.2014.6948816⟩
Communication dans un congrès hal-01959276v1

A review of the pseudo-MOSFET and recent developments

Sorin Cristoloveanu, , Irina Ionica , Amer Diab , Luca Pirro , F.Y. Liu
18th Int. Workshop on Dielectrics in Microelectronics (WODIM 2014), Jun 2014, Kinsale, Ireland
Communication dans un congrès hal-02009825v1

Horizontal Integration and Electrical Characterisation of Si/SiGe Nanowire Tunnel FETs

Virginie Brouzet , Bassem Salem , Priyanka Periwal , Guillaume Rosaz , Thierry Baron
2014 E-MRS Spring Meeting: Symposium X: Materials Research for Group IV semiconductors: Growth, Characterization & Techno, Developments, G. Kissinger, S. Pizzini, H. Yamada-Kaneta, C. Clayes, D. Yang and G. Wilson, May 2014, Lille, France
Communication dans un congrès cea-02067074v1

Low-temperature characterization of Hall and effective mobility in junctionless transistors

Min-Kyu Joo , Mireille Mouis , Benjamin Piot , Sylvain Barraud , Minju Shin
2014 11th International Workshop on Low Temperature Electronics (WOLTE), Jul 2014, Grenoble, France. pp.85-88, ⟨10.1109/WOLTE.2014.6881032⟩
Communication dans un congrès hal-02016510v1

A new gate pattern measurement for evaluating the BTI degradation in circuit conditions

A. Subirats , X. Garros , J. Cluzel , J. El Husseini , F. Cacho
2014 IEEE International Reliability Physics Symposium (IRPS), Jun 2014, Waikoloa, United States. pp.5D.1.1-5D.1.5, ⟨10.1109/IRPS.2014.6860670⟩
Communication dans un congrès hal-02049034v1
Image document

Effective field and universal mobility in high-k metal gate UTBB-FDSOI devices

Olivier Nier , Denis Rideau , Antoine Cros , Frédéric Monsieur , Gérard Ghibaudo
27th International Conference on Microelectronic Test Structures (ICMTS), Mar 2014, Udine, Italy. pp.8 - 13, ⟨10.1109/ICMTS.2014.6841460⟩
Communication dans un congrès hal-01102474v1

Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses

D. Garbin , O. Bichler , E. Vianello , Q. Rafhay , C. Gamrat
2014 IEEE International Electron Devices Meeting, Dec 2014, San Francisco, United States. pp.28.4.1-28.4.4, ⟨10.1109/IEDM.2014.7047126⟩
Communication dans un congrès cea-01839848v1

Electrical transport in thin film transistors with In-Zn-O channels doped with post-transition metals

Mohammed Benwadih , Jan Chroboczek , Gérard Ghibaudo , Romain Coppard , Dominique Vuillaume
Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", Jun 2014, Autrans, France
Communication dans un congrès hal-01055034v1

In depth characterization of electron transport in 14nm FD-SOI nMOS devices

Minju Shin , Ming Shi , Mireille Mouis , Antoine Cros , Emmanuel Josse
10th EUROSOI Workshop, Jan 2014, Tarragone, Spain
Communication dans un congrès hal-01182132v1

In depth characterization of hole transport in 14nm FD-SOI pMOS devices

M. Shin , Minghua Shi , M. Mouis , A. Cros , E. Josse
2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2014, Millbrae, United States. pp.6a.4, ⟨10.1109/S3S.2014.7028215⟩
Communication dans un congrès hal-02016535v1

Study of Low-Frequency Noise in SOI Tri-gate Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo
ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578950⟩
Communication dans un congrès hal-01024536v1

New insight on the frequency dependence of TDDB in high-k/metal gate stacks

Anas Bezza , Mohammad Rafik , Daniel Roy , X. Federspiel , Pascal Mora
IRW 2013, Oct 2013, South Lake Tahoe, CA, United States. ⟨10.1109/IIRW.2013.6804142⟩
Communication dans un congrès hal-01078341v1

Impact of dynamic variability on SRAM functionality and performance in nanoscaled CMOS technologies.

A. Subirats , X. Garros , J. Mazurier , J. El Husseini , O. Rozeau
IRPS 2013, Apr 2013, Monterey, CA, United States. pp.389-393, ⟨10.1109/IRPS.2013.6532008⟩
Communication dans un congrès hal-01074529v1

Impact of back biasing on the effective mobility in UTBB FDSOI CMOS technology

I. Ben-Akkez , C. Fenouillet-Beranger , A. Cros , F. Balestra , G. Ghibaudo
2013 International Semiconductor Conference Dresden-Grenoble: Technology, Design, Packaging, Simulation and Test International Conference and table Top Exhibition (ISCDG 2013), Sep 2013, Dresden, Germany. ⟨10.1109/ISCDG.2013.6656324⟩
Communication dans un congrès hal-01078796v1

Comparative simulation of TriGate and FinFET on SOI: Evaluating a multiple Threshold voltage strategy on triple gate devices

Gérard Ghibaudo
2013 IEEE SOI-3D-Subthreshold Microelectronics Technology unified conference, Oct 2013, Monterey (CA), United States. ⟨10.1109/S3S.2013.6716523⟩
Communication dans un congrès hal-01181250v1

Electrical simulation and characterization of random networks of conducting 1D structures

Min-Kyu Joo , M. Mouis , G.-T. Kim , U. J. Kim , G. Ghibaudo
first meeting on Transparent Conducting Materials, Nov 2013, grenoble, France
Communication dans un congrès hal-01060935v1

Electrical characterization of ultra-thin silicon-on-insulator substrates : static and split C–V measurements in the Pseudo–MOSFET configuration

Piro L. , Diab A. , Ionica I. , Gérard Ghibaudo , Cristoloveanu S.
4th Int. Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Technology (ULSIC ), Jul 2013, Villard de Lans, France. pp.203-208
Communication dans un congrès hal-01182173v1

Understanding Ge impact on VT and VFB in Si1-xGex/Si pMOSFETs

A. Soussou , Cédric Leroux , D. Rideau , A. Toffoli , G. Romano
INFOS 2013, Jun 2013, Cracow, Poland. pp.15.4
Communication dans un congrès hal-01074279v1

Influence of Device Scaling on Low-Frequency Noise in SOI Tri-Gate N- and P-Type Si Nanowire MOSFETs

M. Koyama , M. Cassé , R. Coquand , S. Barraud , G. Ghibaudo
43rd ESSDERC, Sep 2013, Bucarest, Romania. pp.303-307, ⟨10.1109/ESSDERC.2013.6818878⟩
Communication dans un congrès hal-01022530v1

Strain-enhanced performance of Si-Nanowire FETs

S. Barraud , R. Coquand , M. Koyama , G. Ghibaudo , G. Reimbold
223rd ECS Meeting, May 2013, Toronto, Canada
Communication dans un congrès hal-01020599v1

Horizontal Integration and electrical characterisation of Silicon Nanowire Tunnel FETs

V. Brouzet , B. Salem , P. Periwal , T. Baron , F. Bassani
ICONN 2013, 2013, Annecy, France
Communication dans un congrès hal-00955750v1

On the Optimization of Ebeam Lithography Using Hydrogen Silsesquioxane (HSQ) for Innovative Self-Aligned CMOS Process

R. Coquand , S. Monfray , J. Pradelles , L. Martin , M.-P. Samson
223rd ECS Meeting, May 2013, Toronto, Canada
Communication dans un congrès hal-01020074v1

Strain transfer structure as a mobility booster for fully-depleted SOI MOSFETs at the 10nm node

Sylvain Morvan , Andrieu F. , Barbe J.-C. , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523490⟩
Communication dans un congrès hal-01181854v1

Transport and interface characterization in ultra-thin body MOS devices

Gérard Ghibaudo
INFOS 2013, Jun 2013, Cracow, Poland
Communication dans un congrès hal-01074466v1

New methodology for drain current local variability characterization using Y function method

L. Rahhal , A. Bajolet , C. Diouf , A. Cros , J. Rosa
IEEE ICMTS 2013, Mar 2013, Osaka, Japan. pp.99-103, ⟨10.1109/ICMTS.2013.6528153⟩
Communication dans un congrès hal-01024437v1

Gate-Last Integration on planar FDSOI for low-VTp and low-EOT MOSFETs

S. Morvan , F. Andrieu , Cédric Leroux , X. Garros , M. Cassé
INFOS 2013, Jun 2013, Cracow, Poland. pp.6.3
Communication dans un congrès hal-01074289v1

Innovative through-Si 3D lithography for ultimate self-aligned planar Double-Gate and Gate-All-Around nanowire transistors

Coquand R. , Monfray S. , Barraud S. , M. P. Samson , Arvet C.
2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T226-T227
Communication dans un congrès hal-01182106v1

Sheet resistance measurement on AlGaN/GaN wafers and dispersion study

J. Lehmann , Cédric Leroux , M. Charles , A. Torres , E. Morvan
INFOS 2013, Jun 2013, Cracow, Poland. pp.P.14
Communication dans un congrès hal-01074271v1

Simulation methodology for 2D random network of CNTs field-effect transistors

Joo Min-Kyu , Mouis M. , Kim Gyu-Tae , Kim Un Jeong , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. pp.197-200,, ⟨10.1109/ULIS.2013.6523518⟩
Communication dans un congrès hal-01181852v1

Evolution of low frequency noise and noise variability through CMOS bulk technology nodes

E.G. Ioannidis , S. Haendler , J. Rosa , J.-P. Manceau , C.A. Dimitriadis
ICNF 2013 (Int. Conf. on Noise and Fluctuations), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578985⟩
Communication dans un congrès hal-01024616v1

Effective mobility in extra-thin film and ultra-thin BOX SOI wafers.

A. Diab , C. Fernández , L. Pirro , N. Rodriguez , I. Ionica
EuroSOI 2013, Jan 2013, Paris, France. pp.2.4
Communication dans un congrès hal-01068430v1

Modeling of the impact of source/drain regions on short channel effects in MOSFETs

Dutta T. , Rafhay Q. , Pananakakis G. , Gérard Ghibaudo
14th Int. Conference on Ultimate Integration on Silicon, Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523493⟩
Communication dans un congrès hal-01181252v1

High Field Transport Characterization in Nano MOSFETs using 10GHz capacitance measurements

C. Diouf , A. Cros , D. Gloria , J. Rosa , G. Ghibaudo
IEDM 2013, Dec 2013, Washington, United States. pp.192-195, ⟨10.1109/IEDM.2013.6724583⟩
Communication dans un congrès hal-01074181v1

Parameters extraction in SiGe/Si pMOSFETs using split CV technique

A. Soussou , Leroux C. , Rideau D. , Toffoli A. , Romano G.
2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2013, Warwick, United Kingdom. ⟨10.1109/ULIS.2013.6523486⟩
Communication dans un congrès hal-01181784v1

Low-Frequency noise behavior of n-channel UTBB FD-SOI MOSFETs

C. G. Theodorou , F. Andrieu , T. Poiroux , O. Faynot , G. Ghibaudo
ICNF 2013 (Int. Conf. on Noise and Fluctuations, Montpellier, France (June 2013), Jun 2013, Montpellier, France. pp.1-4, ⟨10.1109/ICNF.2013.6578986⟩
Communication dans un congrès hal-01025683v1

Scaling of Ω-gate SOI nanowire N- and P-FET down to 10nm gate length: Size- and orientation-dependent strain effects

S. Barraud , R. Coquand , V. Maffini-Alvaro , M.-P. Samson , J.-M. Hartmann
2013 Symposium on VLSI Technology: Digest of Technical Papers, Jun 2013, Kyoto, Japan. pp.T230-231
Communication dans un congrès hal-01182112v1

New parameter extraction method based on split C-V for FDSOI MOSFETs

I. Ben Akkez , A. Cros , C. Fenouillet-Beranger , F. Boeuf , Quentin Rafhay
2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), Sep 2012, Bordeaux, France. ⟨10.1109/ESSDERC.2012.6343372⟩
Communication dans un congrès hal-01959345v1

Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs

Christoforos Theodorou , Eleftherios Ioannidis , Sebastien Haendler , Nicolas Planes , Franck Arnaud
ESSDERC 2012 - 42nd European Solid State Device Research Conference, Sep 2012, Bordeaux, France. pp.334-337, ⟨10.1109/ESSDERC.2012.6343401⟩
Communication dans un congrès hal-02001870v1

Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs

C. Theodorou , E. Ioannidis , S. Haendler , N. Planes , F. Arnaud
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD), Sep 2012, Grenoble, France. pp.223-226, ⟨10.1109/ISCDG.2012.6360011⟩
Communication dans un congrès hal-02001882v1
Image document

Physical Understanding of Program Injection and Consumption in Ultra-Scaled SiN Split-Gate Memories

L. Masoero , V. Della Marca , G. Molas , M. Gély , O. Cueto
2012 4th IEEE International Memory Workshop (IMW), May 2012, Milan, France. ⟨10.1109/IMW.2012.6213686⟩
Communication dans un congrès hal-01760589v1

Origins of the short channel effects increase in III-V nMOSFET technologies

T. Dutta , Quentin Rafhay , R. Clerc , J. Lacord , S. Monfray
2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France
Communication dans un congrès hal-01959380v1
Image document

Scalability of split-gate charge trap memories down to 20nm for low-power embedded memories

L. Masoero , G. Molas , F. Brun , M. Gély , P. Colonna
2011 IEEE International Electron Devices Meeting (IEDM), Dec 2011, Washington, United States. ⟨10.1109/IEDM.2011.6131522⟩
Communication dans un congrès hal-01760601v1

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

Q. Rafhay , R. Clerc , J. Coignus , G. Pananakakis , G. Ghibaudo
Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom
Communication dans un congrès hal-00604652v1

Electrical Characterization of Si nanowires

G. Ghibaudo
Int. Workshop on silicon nanowires (NANOSIL), 2010, Louvain, Belgium
Communication dans un congrès hal-00604917v1

From DC to RF MOSFET reliability (45mn).

L. Negre , Daniel Roy , S. Boret , P. Scheer , G. Ghibaudo
13th European Microwave Week, 2010, Paris, France
Communication dans un congrès hal-00604281v1

Drain Current Variability in 45nm Heavily Pocket-implanted Bulk MOSFET: Characterization and Modeling

C. M. Mezzomo , A. Bajolet , A. Cathignol , G. Ghibaudo
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain
Communication dans un congrès hal-00604288v1

Static and low frequency noise characterization of P-type polymer and N-type small molecule OFETs

Y. Xu , G. Ghibaudo , F. Balestra , J. Chroboczek , R. Gwoziecki
International Conference on Organic Electronics,, Jun 2010, Paris, France
Communication dans un congrès hal-00604546v1

Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling

G. Molas , L. Masoero , P. Blaise , A. Padovani , J. P. Colonna
IEEE IEDM 2010,, 2010, San Francisco, CA, Spain
Communication dans un congrès hal-00604550v1

Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs.

W. van den Daele , C. Le Royer , J. Mitard , G. Ghibaudo , S. Cristoloveanu
6th EUROSOI Workshop, Jan 2010, Grenoble, France
Communication dans un congrès hal-00604533v1

Several Issues for Analog Design with a 0.18 µm CMOS Technology at Low Temperature

P. Martin , A.S. Royet , M. Cavelier , R. Fascio , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604739v1

Novel characterization of fully-depleted GeOI pMOSFET by magnetoresistance.

W. van den Daele , C. Le Royer , E. Augendre , G. Ghibaudo , S. Cristoloveanu
2010 IEEE International SOI Conference, Oct 2010, San Diego, California, United States
Communication dans un congrès hal-00604645v1

Unified Soft Breakdown MOSFETs Compact Model: From Experiments to Circuit Simulation

L. Gerrer , M. Rafik , G. Ribes , G. Ghibaudo
21st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2010,, 2010, Monte CassinO, Italy
Communication dans un congrès hal-00604282v1

Mobility characterization in advanced FD-SOI CMOS devices

G. Ghibaudo
1st Ukrainian-French Symposium 'Semiconductor-On-Insulator Materials, Devices and Circuits: Physics, Technology and Diagnostics, 2010, Kiev, Ukraine
Communication dans un congrès hal-00604919v1

Impact of hot carrier stress on small signal MOSFET RF parameters

L. Negre , Daniel Roy , S. Boret , P. Scheer , N. Kauffmann
IEEE Integrated Reliability Workshop IRW 2010, 2010, Lake Tahoe, United States
Communication dans un congrès hal-00604565v1

Contact Resistance in Top Gate / Bottom Contact OTFTs.

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , G. Ghibaudo
Int. Conference on Organics Electronics, 2010, Paris, France
Communication dans un congrès hal-00604542v1

Hybrid Localized SOI/Bulk technology for Low Power System-on-Chip.

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau
IEEE VLSI symposium 2010, 2010, Hawai, United States
Communication dans un congrès hal-00604653v1

Characterization and modelling of device variability in advanced CMOS technologies

G. Ghibaudo , C. Mezzomo , A. Bajolet , A. Cathignol , R. Difrenza
Int. workshop on Simulation and Characterization of Statistical CMOS Variability and Reliability, 2010, Bologna, Italy
Communication dans un congrès hal-00604921v1

Localized SOI Logic and Bulk I/O devices co-integration for Low Power System-on-Chip Technology.

J.-L. Huguenin , S. Monfray , S. Denorme , G. Bidal , P. Perreau
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2010, Taiwan
Communication dans un congrès hal-00604654v1

Experimental Analysis of Surface Roughness Scattering in FinFET

J. W. Lee , D. Jang , M. Mouis , G. T. Kim , T. Chiarella
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.305-308
Communication dans un congrès hal-00604290v1

MOS Transistor Matching at Low Temperature for Analog Circuit Design

P. Martin , A.S. Royet , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604738v1

Electrical characterisation of SOI nanodevices

G. Ghibaudo
EUROSOI Conference,, 2010, Grenoble, France
Communication dans un congrès hal-00604524v1

Comparison of Radio Frequency Physical Vapor Deposition target material used for LaOx cap layer deposition in 32nm

S. Baudot , P. Caubet , M. Grégoire , R. A. Bianchi , R. Pantel
Int. Conf. materials for advanced metallization, MAM 2010, 2010, Malines, Belgium
Communication dans un congrès hal-00604574v1

Low temperature characterization of different deep submicron SOI and FinFET devices

J. Jomaah , K. Bennamane , F. Balestra , G. Ghibaudo
9th Int. Workshop on Low Temperature Electronics, WOLTE 9, Jun 2010, Guaruja, Brazil
Communication dans un congrès hal-00604735v1

Parameter Extraction of Nano-Scale MOSFETs Using Modified Y Function Method

N. Subramanian , G. Ghibaudo , M. Mouis
40th European Solid-State Device Research Conference,, Sep 2010, Sevilla, Spain. pp.309-312
Communication dans un congrès hal-00604302v1

Layered HfSiON-based tunnel stacks for voltage reduction and improved reliability in TANOS memories

G. Molas , Marc Bocquet , J. Colonna , V. Vidal , R. Kies
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, Apr 2010, Hsin Chu, France. ⟨10.1109/VTSA.2010.5488949⟩
Communication dans un congrès hal-01745640v1

In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations

Emmanuel Nowak , A. Hubert , L. Perniola , T. Ernst , G. Ghibaudo
2nd International Memory Workshop, 2010, South Korea
Communication dans un congrès hal-00604552v1

Ultra-Thin (4nm) Gate-All-Around CMOS devices with High-k/Metal for Low Power Multimedia Applications

J.-L. Huguenin , S. Monfray , G. Bidal , S. Denorme , P. Perreau
SSDM 2010, 2010, tokyo, Japan
Communication dans un congrès hal-00604648v1

Low-Frequency Noise in a 0.18 µm Mixed-Mode CMOS Technology at Low Temperature

P. Martin , M. Cavelier , G. Ghibaudo
International Conference on Noise and Fluctuations (ICNF), 2009, Pisa, Italy
Communication dans un congrès hal-00603794v1

Mobility enhancement by CESL strain in SOI MOSFETs. Euro-SOI

L. Pham-Nguyen , C. Fenouillet-Beranger , G. Ghibaudo , S. Cristoloveanu
5th EUROSOI Workshop, Jan 2009, Göteborg, Sweden
Communication dans un congrès hal-00603735v1

Relationship between mobility and high-k interface properties in advanced Si and SiGe nanowires

K. Tachi , M. Casse , D. Jang , C. Dupré , A. Hubert
IEEE International Electron Devices Meeting, Dec 2009, Balitimore, United States
Communication dans un congrès hal-00603809v1

Impact of Coulomb Scattering on the Characteristics of Nanoscale Devices

F. Boeuf , G. Ghibaudo , T. Skotnicki
International Conference on Solid State Devices and Materials (SSDM, 2009, Sendai, Japan
Communication dans un congrès hal-00604219v1

Experimental Investigation of Transport Mechanisms through HfO2 Gate Stacks in nMOS Transistors

J. Coignus , Cédric Leroux , R. Clerc , G. Ghibaudo , G. Reimbold
European Solid-State Device Research Conference,, Sep 2009, Athènes, Greece. pp.169-173
Communication dans un congrès hal-00603729v1

Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures

S. Altazin , R. Clerc , R. Gwoziecki , G. Ghibaudo , G. Pananakakis
International Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom
Communication dans un congrès hal-00603796v1

Etat de l'art de la compréhension du transport quasi ballistique dans les composants MOS avancés

R. Clerc , Q. Rafhay , G. Ghibaudo
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès hal-00604961v1

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation.

G. Bidal , D. Fleury , G. Ghibaudo , F. Boeuf , T. Skotnicki
Conference workbook., 2009, kyoto, Japan
Communication dans un congrès hal-00604208v1

Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

E. Buccafurri , A. Medjahdi , F. Calmon , R. Clerc , M. Pala
European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241
Communication dans un congrès hal-00603719v1

Strain sensitivity of gate leakage in biaxially strained FD-SOI nMOSFETs: a benefit for the performance trade-off and a novel way to extract the strain-induced band offset

F. Rochette , X. Garros , G. Reimbold , F. Andrieu , M. Cassé
International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom
Communication dans un congrès hal-00603824v1

Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic Stacks

S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , J. M. Verilhac
International Electron Device Meeting, Dec 2009, Balitimore, United States
Communication dans un congrès hal-00603814v1

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94
Communication dans un congrès hal-00604239v1

Quantization Effects in Silicided and Metal Gate MOSFETs. ULIS

N. Rodriguez , F. Gámiz , R. Clerc , C. Sampedro , A. Godoy
Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.103-106
Communication dans un congrès hal-00604243v1

Pockets engineering impact on mismatch performance on 45nm MOSFET technologies

C. M. Mezzomo , C. Leyris , E. Josse , G. Ghibaudo
Int. Conference on Ultimate Integration of Silicon, Mar 2009, Aachen, Germany. pp.15-18
Communication dans un congrès hal-00604235v1

New Experimental Insight into Ballisticity of Transport in Strained Bulk MOSFETs

D. Fleury , G. Bidal , A. Cros , F. Boeuf , T. Skotnicki
IEEE Symposium on VLSI Technology (VLSI Symposium),, Jun 2009, kyoto, Japan
Communication dans un congrès hal-00604249v1
Image document

Etude expérimentale de la balisticité du transport dans les transistors nMOS contraints sur silicium massif

Dominique Fleury , Grégory Bidal , Antoine Cros , Frédéric Boeuf , Thomas Skotnicki
Journées Nationales du GdR Nanoélectronique, May 2009, Orsay, France. pp.18-19
Communication dans un congrès hal-00465797v1
Image document

Guidelines for MOSFET Device Optimization accounting for L-dependent Mobility Degradation

Grégory Bidal , Dominique Fleury , Gérard Ghibaudo , Frédéric Boeuf , Thomas Skotnicki
Silicon Nanoelectronics Workshop (SNW), Jun 2009, Kyoto, Japan. pp.25-26
Communication dans un congrès hal-00465794v2

Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas
to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan
Communication dans un congrès hal-00603879v1
Image document

A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs

Dominique Fleury , Antoine Cros , Grégory Bidal , Hugues Brut , Emmanuel Josse
International Symposium on VLSI Technology, Systems and Applications, Apr 2009, Hsinchu, Taiwan. pp.109 - 110, ⟨10.1109/VTSA.2009.5159314⟩
Communication dans un congrès hal-00465769v1

1/f Noise Modeling at Low Temperature with the EKV3 Compact Model.

P. Martin , G. Ghibaudo
NSTI Nanotech 2009, Workshop on Compact Modeling (WCM 2009), May 2009, Houston, United States. pp.636-638
Communication dans un congrès hal-00604193v1

Performance Boosters for Advanced SOI CMOS.

L. Pham Nguyen , C. Fenouillet-Beranger , Pl Perreau , S. Denorme , G. Ghibaudo
Advanced Workshop on 'Frontiers in Electronics' (WOFE 09),, 2009, Rincon, Puerto Rico
Communication dans un congrès hal-00604264v1

Mismatch Measure Improvement Using Kelvin Test Structures in Transistor Pair Configuration in Sub-Hundred Nanometer MOSFET Technology

C. M. Mezzomo , M. Marin , C. Leyris , G. Ghibaudo
IEEE International Conference on Microelectronic Test Structures, Apr 2009, Oxnard, United States. pp.62-67
Communication dans un congrès hal-00603793v1

Electrical noise in semiconductor devices - Case of CMOS technologies.

G. Ghibaudo
Global e-workshop on semiconductor technology, 2009, North Korea
Communication dans un congrès hal-00604750v1

Oxide Soft BreakDown : From Device Modeling to Small Circuit Simulation

L. Gerrer , G. Ghibaudo , G. Ribes
39th European Solid-State Circuit Research Conference, Sep 2009, Athènes, Greece
Communication dans un congrès hal-00603730v1

Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices

G. Ghibaudo , M. Mouis , L. Pham-Nguyen , K. Bennamane , I. Pappas
GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France
Communication dans un congrès hal-00604959v1

A stacked SONOS technology, up to 4 levels and 6nm crystalline nanowires, with gate-all-around or independent gates (Φ-Flash), suitable for full 3D integration.

A. Hubert , Emmanuel Nowak , K. Tachi , V. Maffini-Alvaro , C. Vizioz
IEEE International Electron Devices Meeting, Baltimore,, Dec 2009, United States
Communication dans un congrès hal-00603802v1

Charge Localization During Program and Retention in NROM-like Nonvolatile Memory Devices.

Emmanuel Nowak , E. Vianello , L. Perniola , Marc Bocquet , G. Molas
International Conference on Solid State Devices and Materials (SSDM), 2009, Sendai, Japan
Communication dans un congrès hal-00604215v1

Analytical modeling of accumulation-mode suspended gate MOSFET and process challenges for very low operating power devices.

M. Collonge , M. Vinet , M. Ribeiro , J.-M. Pedini , B. Previtali
Conference proceedings to be published, IEEE, 2009, Apr 2009, Hsinchu, Taiwan
Communication dans un congrès hal-00604262v1

Study of Organic Material FETs by Combined Static and Low Frequency Noise Measurements

Y. Xu , T. Minari , K. Tsukagoshi , K. Bock , M. Fadallah
AIP Conference Proceedings, 2009, Pisa, Italy. pp.163-166
Communication dans un congrès hal-00603795v1

Tuning the dipole at the High-k/SiO2 interface in advanced metal gate stacks

M. Charbonnier , Cédric Leroux , V. Cosnier , P. Besson , F. Martin
International Conference on Insulating Films on Semiconductors (INFOS), Jul 2009, Cambridge, United Kingdom
Communication dans un congrès hal-00603834v1

From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices IMW

J. Buckley , T. Pro , R. Barattin , A. Calborean , K. Huang
to be published (IEEE Conference Proceedings, 2009), May 2009, Monterey, CA, United States
Communication dans un congrès hal-00603820v1

On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories

Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley
38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, France
Communication dans un congrès hal-00392558v1

Impact of scaling on electrostatics of germanium-channel MOSFET-analytical study.

E. Batail , S. Monfray , A. Pouydebasque , G. Ghibaudo , T. Skotnicki
IEEE Silicon Nanoelectronics Workshop, Honolulu, USA, Jun 2008, Honolulu, United States
Communication dans un congrès hal-00392184v1

Impact of Silicon nitride CESL on NLDEMOS transistor reliability.

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
ESREF 2008, Maastricht, The Netherlands, Sep 2008, Maastricht, Netherlands
Communication dans un congrès hal-00392129v1

NANOSIL Network of Excellence : silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois
European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium I : Front-end junction and contact formation in future Silicon/Germanium based devices, 2008, Strasbourg, France
Communication dans un congrès hal-00361546v1

How to Monitor Metal-Insulator-Metal (MIM) Capacitors Dielectric Reliability.

V. Martinez , C. Besset , F. Monsieur , D. Ney , L. Montès
26th International Conference on Microelectronics, MIEL, Nis, Serbia, May 2008, Nis, Serbia
Communication dans un congrès hal-00392492v1

Contact etch stop a-SixNy:H layer: a key factor for single polysilicon flash memory data retention.

G. Beylier , D. Benoit , P. Mora , S. Bruyère , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392476v1

Coupled Approach for Reliability Study of Fully Self Aligned SiGe:C 250GHz HBTs.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , T. Schwartzmann
Integrated Reliability Workshop IRW, Lake Tahoe, USA, Nov 2008, USA, United States
Communication dans un congrès hal-00392171v1

Aspects of nanoelectronics in Minatec.

G. Ghibaudo
Invited paper, Workshop on advances in nanoelectronics, Kuwait City, Kuwait, Mar 2008, Kuwait, Kuwait
Communication dans un congrès hal-00392464v1

Analog-Digital Circuit Design at Low Temperature.

P. Martin , M. Cavelier , R. Fascio , G. Ghibaudo
8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany
Communication dans un congrès hal-00392479v1

NANOSIL Network of Excellence: Silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. Balestra , E. Parker , D. Leadley , S. Mantl , Emmanuel Dubois
European Materials Research Society (E-MRS 2008), Symposium, May 2008, Strasbourg, France
Communication dans un congrès hal-00391849v1

On the Influence of Molecular Linker on Charge Transfer Rate in Hybrid Molecular (Ferrocene)/Silicon Field Effect Memories.

J. Buckley , T. Pro , R. Barattin , A. Calborean , M. Gély
23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France
Communication dans un congrès hal-00392147v1

15nm-diameter 3D Stacked Nanowires with optional Independent Gates operation (?FET)

C. Dupré , A. Hubert , S. Bécu , M. Jublot , V. Maffini-Alvaro
IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, Grenoble, France
Communication dans un congrès hal-00392154v1

Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo
2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France
Communication dans un congrès hal-00391924v1

Back-Scattering in Quasi Ballistic NanoMOSFETs: The role of Non Thermal Carrier Distributions

R. Clerc , P. Palestri , L. Selmi , G. Ghibaudo
IEEE ULIS conference, Mar 2008, Grenoble, France
Communication dans un congrès hal-00391933v1

Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs.

L. Pham-Nguyen , C. Fenouillet-Beranger , A. Vandooren , A. Wild , G. Ghibaudo
IEEE International SOI Conference, New Paltz, New York USA, Nov 2008, New York, United States
Communication dans un congrès hal-00392447v1

New Y-Function-Based Methodology for Accurate Extraction of Electrical Parameters on Nano-Scaled MOSFETs

D. Fleury , A. Cros , H. Brut , G. Ghibaudo
IEEE International Conference on Microelecronics Test Structure, ICMTS, Edinburgh, Scotland, 2008, Edinburgh, France
Communication dans un congrès hal-00392150v1

Impact of Progressive Soft Oxide Breakdown on MOS Parameters: Experiment and Modelling.

L. Gerrer , G. Ribes , G. Ghibaudo , J. Jomaah
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392468v1

A Mobility Extraction Method for 3D Multichannel Devices.

C. Dupré , T. Ernst , E. Bernard , B. Guillaumot , N. Vulliet
38th European Solid-State Device Research Conference (ESSDERC'08),, Sep 2008, Grenoble, France
Communication dans un congrès hal-00391984v1

Reliability of charge trapping memories with high-k control dielectrics

G. Molas , Marc Bocquet , H. Grampeix , J.P. Colonna , L. Masarotto
5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, Austin, United States
Communication dans un congrès hal-00392559v1

SiO2 Interfacial Layer as The Origin of The Breakdown of High-k Dielectric Stacks.

M. Rafik , G. Ribes , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, -, Germany
Communication dans un congrès hal-00392472v1

Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials

Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo
4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44
Communication dans un congrès hal-00391957v1

Experimental characterization of advanced nano-scale MOSFETs

G. Ghibaudo
Sinano School, Bertinoro, Italy,, Sep 2008, Bertinoro, Italy
Communication dans un congrès hal-00392189v1

Study of Ferrocene/Silicon Hybrid Memories: Influence of the Chemical Linkers and Device Thermal Stability.

T. Pro , J. Buckley , R. Barattin , A. Calborean , M. Gély
38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, -, France
Communication dans un congrès hal-00392137v1

Impact of Oxide Progressive Soft Breakdown: Experiment and Modeling.

L. Gerrer , G. Ghibaudo , J. Jomaah , G. Ribes
Fringe workshop ESSDERC 08, Edinburgh, UK, Sep 2008, Edinburgh, Ireland
Communication dans un congrès hal-00392142v1

Pushing Bulk Transistor with Conventional SiON Gate Oxide for Low Power Applications.

G. Bidal , F. Boeuf , F. Payet , S. Denorme , N. Loubet
International Conference on Solid State Devices and Materials (SSDM 2008), Tokyo, Japon, Sep 2008, Tokyo, Japan
Communication dans un congrès hal-00392452v1

Low-Temperature Electrical Characterization of eXtra-strained FD-SOI n-MOSFETs with TiN/HfO2 gate stack for the 32nm Technology Node.

S. Feruglio , F. Andrieu , O. Faynot , Patrick Garda , G. Ghibaudo
8th International Workshop on Low Temperature Electronics, WOLTE 8, Jena/Gabelbach, Germany, Jun 2008, Jena, Germany
Communication dans un congrès hal-00392485v1

Contributions and Limits of Charge Pumping Measurement for Addressing Trap Generation in High-K/SiO2 Dielectric Stacks.

M. Rafik , G. Ghibaudo
IEEE IRPS 2008, Phoenix, Arizona, USA, Apr 2008, Phoenix, United States
Communication dans un congrès hal-00392166v1

Nano Accumulation-Mode Suspended-Gate MOSFET: Impact of adhesion forces on electro-mechanical characteristics.

M. Collonge , M. Vinet , S. Deleonibus , G. Ghibaudo
IEEE ULIS conference, Udine, Italy, Mar 2008, Udine, Italy
Communication dans un congrès hal-00392458v1

New characterization methods for nanoMOSFETs.

G. Ghibaudo
MIGAS 2008, Autrans, Jun 2008, Autrans, France
Communication dans un congrès hal-00392178v1

New Physical Model for ultra-scaled 3D Nitride-Trapping Non-Volatile Memories.

Emmanuel Nowak , Marc Bocquet , L. Perniola , G. Ghibaudo , G. Molas
IEEE International Electron Devices Meeting 2008, San Francisco, USA, Dec 2008, San Francisco, United States
Communication dans un congrès hal-00392162v1

Analysis of Electron Mobility in HfO2/TiN MOSFETs: The influence of HfO2 thickness, Temperature and oxide charge

M.A. Negara , K. Cherkaoui , C.D. Young , P. Majhi , W. Tsai
39th IEEE Semiconductor Interface Specialists Conference, San Diego, Dec 2008, USA, France
Communication dans un congrès hal-00391866v1

Low Frequency Noise Analysis in HfO2/SiO2 gate oxide Fully-Depelted SOI Transistors.

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
15th Workshop on Dielectrics in Microelectronics, Berlin, Germany, Jun 2008, Berlin, Germany
Communication dans un congrès hal-00392487v1

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet
ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France
Communication dans un congrès hal-00391921v1

Analytical Modeling of Tunneling Current through SiO2-HfO2 Stacks in MOS Structures

J. Coignus , R. Clerc , Cédric Leroux , G. Reimbold , G. Ghibaudo
15th Workshop on Dielectrics in Microelectronics, Jun 2008, Berlin, France
Communication dans un congrès hal-00391881v1

Planar Bulk+ Technology using TiN/Hf-based gate stack for Low Power Applications.

G. Bidal , F. Boeuf , S. Denorme , N. Loubet , C. Laviron
2008 Symposium on VLSI Technology, Hawai, USA, Jun 2008, Hawai, United States
Communication dans un congrès hal-00392459v1

On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories.

Emmanuel Nowak , L. Perniola , G. Ghibaudo , C. Jahan , P. Scheiblin
23rd IEEE NVSMW / 3rd ICMTD '08, Club Méditerranée, Opio, FRANCE, May 2008, Opio, France
Communication dans un congrès hal-00392144v1

Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.

Mame Andallah Diop , N. Revil , M. Marin , F. Monsieur , P. Chevalier
ESREF 2008, Maastricht, The Netherlands, Sep 2008, -, Netherlands
Communication dans un congrès hal-00392127v1
Image document

Intrinsic fixed charge and trapping properties of HfAlO interpoly dielectric layers

Marc Bocquet , G. Molas , H. Grampeix , J. Buckley , F. Martin
International Conference on Memory Technology and Design (ICMTD), May 2007, Giens, France
Communication dans un congrès hal-01745578v1

Accurate Determination of Flat Band Voltage in advanced MOS structure

Cédric Leroux , G. Ghibaudo , G. Reimbold
WoDIM 2006, 2006, Catania, Italy. pp.XX
Communication dans un congrès hal-00147129v1

Large scale time characterization and analysis of PBTI in HfO2/metal gate stacks

J. Mitard , X. Garros , L.P. Nguyen , Cédric Leroux , G. Ghibaudo
IRPS 2005, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146929v1

Low Frequency Noise and Fluctuations in sub 0.1µm Bulk and SOI CMOS Technologies

Gérard Ghibaudo , J. Jomaah
MIEL 2005, 2006, Nis, Serbia
Communication dans un congrès hal-00145669v1

Étude de la mobilité effective dans les DG MOSFET quasi-balistiques

K. Huet , J. Saint-Martin , A. Bournel , G. Ghibaudo , P. Dollfus
xxxx, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00148265v1

Mobility Extraction in Double-Gate MOSFETs by Magnetoresistance Technique (poster)

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez
Journées "Simulation et caractérisation des nanocomposants" du GDR Nanoélectronique, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00148279v1

Impact of TiN post-treatment on Metal Insulator Metal capacitors performances

A. Bajolet , J.P. Manceau , S. Bruyère , R. Clerc , M. Proust
MAM 2006, Materials for Advanced Metallization Conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00146672v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret
IEEE Int. SOI Conference, 2006, USA, United States. pp.XX
Communication dans un congrès hal-00147145v1

Initial and PBTI-induced traps and charges in Hf(Six)Oy / TiN stacks

G. Reimbold , J. Mitard , X. Garros , C. Leroux , Gérard Ghibaudo
WODIM 06, 2006, Catania, Italy
Communication dans un congrès hal-00145682v1

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

J. Buckley , Marc Bocquet , G. Molas , M. Gely , P. Brianceau
NVMsIEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147137v1

Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET

L. Zafari , J. Jomaah , G. Ghibaudo , O. Faynot
IEEE Int. SOI Conference, 2006, USA, United States. pp.XX
Communication dans un congrès hal-00147154v1

High mobility nanometer-scaled CMOS: opportunities and challenges

T. Ernst , F. Andrieu , O. Weber , C. Dupré , O. Faynot
Third International SiGe Technology and Device Meeting (ISTDM), May 2006, Princeton, New Jersey, United States
Communication dans un congrès hal-00145675v1

Investigation of interface defects and bulk charges in metal gate HfO_2 MOSFETs

M.A. Negara , K. Cherkauoi , G. Ghibaudo , D. Bauza , W. Tsaii
European Materials Research Science Spring Meeting, 2006, STRASBOURG, France. pp.XX
Communication dans un congrès hal-00147150v1

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

A. Cros , K. Romanjek , D. Fleury , S. Harrison , R. Cerutti
IEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147133v1

Impact of a single grain boundary in the polycrystalline silicon gate on sub 100nm bulk MOSFET characteristics - Implication on matching properties

A. Cathignol , K. Rochereau , G. Ghibaudo
ULIS conference, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146955v1

Low Frequency Noise in advanced CMOS devices

Gérard Ghibaudo , J. Jomaah
3rd Int. Symp. On System construction of global network oriented information electronics, 2006, Sendai, Japan
Communication dans un congrès hal-00145666v1

Experimental evidence of mobility enhancement in short-channel ultra-thin body double-gate MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , J. Widiez
36th European Solid-State Device Research Conference (ESSDERC'06), 2006, Genève, Switzerland. Actes pp. 367-370
Communication dans un congrès hal-00147170v1

Transport parameter extraction in short channel MOS transistors

G. Ghibaudo
Journées du GDR Nanoélectronique, 2006, GRENOBLE, France
Communication dans un congrès hal-00148263v1

Surface Segregation and Electrical Studies of Heavily Arsenic and Phosphorus in situ Doped Epi and Poly Silicon

G. Borot , L. Rubaldo , N. Breil , J. Boussey , G. Ghibaudo
2006-International-SiGe-Technology-and-Device-Meeting, 2006, CANCUN, Mexico. pp.XX
Communication dans un congrès hal-00147148v1

Injection Velocity Optimization in Quasi-Ballistic Si-nMOSFETs

M. Ferrier , R. Clerc , Q. Raphay , F. Daugé , Gérard Ghibaudo
Silicon Nanoelectronics Workshop, 2006, Honolulu, United States
Communication dans un congrès hal-00146658v1

Drain and Gate Current Low Frequency Noise in Biaxially Strained Siliconn-MOSFETs with Ultrathin Gate Oxides

T. Contaret , T. Boutchacha , G. Ghibaudo , F. Bœuf , T. Skotniki
ULIS conference, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146961v1

Unified Analysis of Degraded Base Current in SiGe:C HBTs after Reverse and Forward Reliability Stress

M. Ruat , N. Revil , G. Pananakakis , G. Ghibaudo
IEEE Bipolar - BiCMOS Circuits and Technology Meeting (BCTM2006), 2006, Maastricht, Netherlands. pp.XX
Communication dans un congrès hal-00147125v1

New insight on Stress Induced Leakage Current on SiO2/HfO2 stack

M. Rafik , G. Ribes , G. Ghibaudo
XX, 2006, XX, France. pp.XX
Communication dans un congrès hal-00147141v1

Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride

G. Beylier , S. Bruyère , D. Benoit , G. Ghibaudo
WoDIM 2006, 2006, Catania, Italy. pp.XX
Communication dans un congrès hal-00147130v1

Perspectives du Formalisme Dérive Diffusion en Régime Quasi Ballistique pour la Modélisation Analytique des Composants MOS

R. Clerc , P. Palestri , M. Ferrier , Q. Rafhay , G. Pananakakis
GDR Nano, Journées " Simulation et Caractérisation ", 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00148261v1

Impact of Film Thickness on LF Noise in SOI Devices

L. Zafari , J. Jomaah , G. Ghibaudo
International Conference on Solid State Devices and Materials (SSDM 2006), 2006, Japan, Japan. pp.XX
Communication dans un congrès hal-00147157v1

Reliability characteristics of 150GHz fT/fmax Heterojunction Bipolar Transistors under reverse, forward and mixed-mode stress

M. Ruat , J. Bourgeat , M. Marin , G. Ghibaudo , N. Revil
Int. Reliability Workshop 2006, 2006, Stanford Sierra, United States. pp.XX
Communication dans un congrès hal-00147143v1

Electrical Characterization of Single and Multi Gate Device

Gérard Ghibaudo , Sorin Cristoloveanu,
Int. Summer School on Advanced Microelectronics MIGAS 2006, 2006, Autrans, France
Communication dans un congrès hal-00145688v1

Quantum effects influence on thin silicon film capacitor-less DRAM performance

S. Puget , G. Bossu , A. Regnier , R. Ranica , A. Villaret
International SOI Conference, Oct 2006, New York, United States. pp.157-158
Communication dans un congrès hal-00525093v1

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) CMOSFETs with HfO2/TiN gate stack

T. Ernst , C. Dupre , C. Isheden , E. Bernard , R. Ritzenthaler
IEDM 2006, 2006, San Francisco, United States. pp.XX
Communication dans un congrès hal-00147138v1

Low Frequency Noise in Multi-Gate SOI CMOS Devices

L. Zafari , J. Jomaah , G. Ghibaudo
EUROSOI conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00147152v1

Impact of emitter resistance mismatch on base and collector current matching in bipolar transistors

S. Danaie , A. Perrotin , G. Ghibaudo , J.-C. Vildeuil , G. Morin
IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146931v1

Improved methodology for the Characterization of Avt MOSFET matching parameter dispersion

A. Cathignol , K. Rochereau , S. Bordez , G. Ghibaudo
IEEE ICMTS 2006, 2006, Grenoble, France. pp.XX
Communication dans un congrès hal-00146936v1

Ultra-thin fully-depleted SOI MOSFETs: special charge properties and coupling effects

S. Eminente , Sorin Cristoloveanu , R. Clerc , A. Ohata , Gérard Ghibaudo
EUROSOI 2006, 2006, Grenoble, France
Communication dans un congrès hal-00146784v1

Influence of interface coupling on the mobility in FDSOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon
Com à NATO Advanced Research Workshop on Nanoscaled Semiconductor-On-Insulator Structures and Devices, 2006, Ukraine, Ukraine. pp.XX
Communication dans un congrès hal-00147178v1

Influence of interface coupling on the mobility in FD-SOI MOSFETs

W. Chaisantikulwat , M. Mouis , G. Ghibaudo , S. Cristoloveanu , C. Gallon
NATO International Advanced Research Workshop, 2006, Ukraine, Ukraine. pp.XX
Communication dans un congrès hal-00147174v1

Floating Body Effects in 90nm Partially Depleted MOSFETs

L. Zafari , J. Jomaah , G. Ghibaudo
ULIS conference, 2006, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00147163v1

Saturation Drain Current analytical modeling of Single Gate Fully Depleted SOI or SON MOSFETs in the Quasi Ballistic Regime of Transport

M. Ferrier , R. Clerc , L. Lucci , Gérard Ghibaudo , A. Vandooren
2006 IEEE International SOI Conference, 2006, Niagara Falls, United States. pp.XX
Communication dans un congrès hal-00146654v1

Investigation of the Effective Field Impact on the Carrier Mobility in sub-100nm MOSFETs

F. Andrieu , T. Ernst , Gérard Ghibaudo , S. Deleonibus
ULtimate Integration of Silicon (ULIS) Workshop, 2005, Bologne, Italy
Communication dans un congrès hal-00146505v1

Experimental Investigation of Low and High Field Transport in Substrate- and Process-Induced Strained Nanoscaled MOSFETs

F. Andrieu , T. Ernst , F. Lime , F. Rochette , K. Romanjek
Symposium on VLSI Technology, 2005, Kyoto, Japan. pp.XX
Communication dans un congrès hal-00146481v1

Magnetoresistance Mobility Meaurements in Gate-All-Around SON MOSFETs

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , Duncan Kennedy Maude , A. Cros
Workshop Euro-SOI, 2005, GRANADA, Spain. pp.XX
Communication dans un congrès hal-00146521v1

Magnetoresistance technique for mobility extration in short channel FD-SOI transistors

W. Chaisantikulwat , M. Mouis , Gérard Ghibaudo , C. Gallon , C. Fenouillet-Beranger
35th European Solid-State Device Research Conference (ESSDERC'05), ESSDERC 05, 2005, GRENOBLE, France. pp.569-572
Communication dans un congrès hal-00146565v1

3D High Density MIM Capacitors Integrated in BiCMOS Technology

A. Bajolet , C. Giraudin , C. Rossato , L. Pinzelli , S. Bruyère
35th European Solid-State Device Research Conference (ESSDERC'05), 2005, GRENOBLE, France. pp.XX
Communication dans un congrès hal-00146518v1

Planar glass integrated optical structure based on prism decoupling for sensing application

C.A Sánchez-Pérez , G. Ghibaudo , J.E. Broquin
Photonic Integration, Proc. SPIE 5728, 2005, SAN JOSE CA, United States. pp.XX
Communication dans un congrès hal-00148004v1

Experimental mobility study of DG-GAA MOSFETs down to 40nm gate length

A. Cros , S. Harrison , P. Coronel , P. Balossier , T. Skotnicki
EUROSOI 2005: First Workshop of the Thematic Network on Silicon On Insulator Technology, Devices and Circuits, 2005, Granada, Spain
Communication dans un congrès hal-00146483v1

Electrical characterization of high density trench capacitors, and comparison with planar capacitors

A. Bajolet , J.C. Giraudin , S. Bruyère , C. Rossato , P. Delpech
Workshop sur les nouveaux oxydes à forte permittivité pour l'intégration dans les semiconducteurs, 2005, Autrans, France
Communication dans un congrès hal-00146515v1

New extraction method for gate bias dependent series resistance in nanometric double gate transistors.

A. Cros , S. Harrison , R. Cerutti , P. Coronel , Gérard Ghibaudo
International Conference on Microelectronic Test Structures - ICMTS, 2005, Louvain, Belgium
Communication dans un congrès hal-00146484v1

In-Depth Study of Strained SGOI nMOSFETs down to 30nm Gate Length

F. Andrieu , T. Ernst , O. Faynot , O. Rozeau , Y. Bogumilowicz
35st European Solid-State Device Research Conference, 2005, Grenoble, France
Communication dans un congrès hal-00146508v1
Image document

Modelling of the Programming Window Distribution in Multi Nanocrystals Memories

Luca Perniola , Barbara De Salvo , Gérard Ghibaudo , Armando Foglio Para , Georges Pananakakis
ESSDERC, 2003, Lisbon, Portugal. ⟨10.1109/TNANO.2003.820782⟩
Communication dans un congrès hal-00485165v1

Influence of dots size and dots number fluctuations on the electrical characteristics of multi nanocrystal memory devices

L. Perniola , B. de Salvo , T. Baron , G. Ghibaudo , S. Lombardo
WODIM 2002, 2002, Grenoble, France
Communication dans un congrès hal-00486141v1

Nano crystal memory devices characterization using the charge pumping technique

P. Masson , L. Militaru , B. de Salvo , G. Ghibaudo , V. Celibert
ESSDERC, 2002, Irlande, Ireland
Communication dans un congrès hal-00484546v1
Image document

Noise and Fluctuations in Fully Depleted Silicon-On-Insulator MOSFETs

Christoforos Theodorou , Gérard Ghibaudo
Noise in Nanoscale Semiconductor Devices, 2020
Chapitre d'ouvrage hal-03090062v1

Sensitivity of silicon nanowire biochemical sensors

Pierpaolo Palestri , Mireille Mouis , Aryan Afzalian , Luca Selmi , Federico Pittino
F. Balestra. Beyond CMOS Nanodevices 1, Wiley-ISTE, pp.43-64, 2014, Nanoscience and nanotechnology series, 978-1-84821-654-9, 978-1-11898-477-2. ⟨10.1002/9781118984772.ch3⟩
Chapitre d'ouvrage hal-01059156v1

Electron and Hole Mobility in Semiconductor Devices

Quentin Rafhay , Gérard Ghibaudo
Ed. by J.G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 2014, ⟨10.1002/047134608X.W3148.pub2⟩
Chapitre d'ouvrage hal-01959198v1

Nanowire Devices

Gérard Ghibaudo , Sylvain Barraud , Mikaël Cassé , Xin Peng Wang , Guo Qiang Lo
Ed. by F. Balestra. Beyond‐CMOS Nanodevices 2, Wiley-ISTE, pp.25-95, 2014, Nanoscience and Nanotechnology Series, 978-1-84821-655-6 978-1-11898-513-7. ⟨10.1002/9781118985137.ch2⟩
Chapitre d'ouvrage hal-02051240v1

Modeling of End of the Roadmap nMOSFET with Alternative Channel Material

Quentin Rafhay , R. Clerc , G. Ghibaudo , P. Palestri , L. Selmi
Nanoscale CMOS: Innovative Materials, Modeling and Characterization, John Wiley & Sons, Inc., pp.287-334, 2013
Chapitre d'ouvrage hal-01959425v1

Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences

G. Ghibaudo , T. Skotnicki
Elsevier Sciences. Special issue of selected papers from "35th ESSDERC Conference", volume 50, Elsevier Sciences, Guest editors, pp.volume 50, 2006
Chapitre d'ouvrage hal-00148996v1

Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05)

G. Ghibaudo , T. Skotnicki , S. Cristoloveanu , M. Brillouet
Proceedings of the 35th European Solid-State Device Research Conference (ESSDERC 05), IEEE/Color Press, pp.XX, 2005
Chapitre d'ouvrage hal-00148991v1

Electron and Hole Mobility in Semiconductor Devices

Gérard Ghibaudo
Ed. by J. G. Webster. Wiley Encyclopedia of Electrical and Electronics Engineering, John Wiley & Sons, Inc., 1999, 9780471346081. ⟨10.1002/047134608X.W3148⟩
Chapitre d'ouvrage hal-02061260v1
Image document

NH 3 treatments of Hf-based layers for application as NVM active dielectrics

Marc Bocquet , G. Molas , E. Martínez , H. Grampeix , F. Martin
IEEE Semiconductor Interface Specialists Conference (SISC), Dec 2007, Arlington, United States
Poster de conférence hal-01745607v1