Nombre de documents

82

Gérard BenAssayag


Article dans une revue59 documents

  • Marzia Carrada, Assia Haj Salem, Béatrice Pécassou, Vincent Paillard, Gérard Benassayag. Ultra-low-energy ion-beam synthesis of nanometer-separated Si nanoparticles and Ag nanocrystals 2D layers. Materials Research Express, IOP Publishing Ltd, 2018, 5 (3), 〈10.1088/2053-1591/aab582〉. 〈hal-01755333〉
  • Caroline Bonafos, Gérard Benassayag, Robin Cours, Béatrice Pécassou, Pierre-Vincent Guenery, et al.. Ion beam synthesis of indium-oxide nanocrystals for improvement of oxide resistive random-access memories. Materials Research Express, IOP Publishing Ltd, 2018, 5, pp.015027. 〈10.1088/2053-1591/aaa30b〉. 〈hal-01701543〉
  • Iman Abdallah, Barthélémy Pradines, Nicolas Ratel-Ramond, Gérard Benassayag, Rémi Arras, et al.. Evolution of magnetic properties and damping coefficient of Co 2 MnSi Heusler alloy with Mn/Si and Co/Mn atomic disorder. Journal of Physics D: Applied Physics, IOP Publishing, 2017, 50 (3), pp.035003. 〈10.1088/1361-6463/50/3/035003〉. 〈hal-01744846〉
  • Celia Castro, Gérard Benassayag, Béatrice Pécassou, Andrea Andreozzi, Gabriele Seguini, et al.. Nanoscale control of Si nanoparticles within a 2D hexagonal array embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2017, 28 (1), 〈10.1088/0957-4484/28/1/014001〉. 〈hal-01745005〉
  • Marzia Carrada, Assia Haj Salem, Béatrice Pécassou, Robert Carles, Gérard Benassayag. Hybrid systems with Ag nanocrystals and Si nanostructures synthesized by ultra-low-energy ion beam synthesis. Journal of Applied Physics, American Institute of Physics, 2017, 122 (10), pp.103101. 〈10.1063/1.5000360〉. 〈hal-01755324〉
  • Iman Abdallah, Nicolas Ratel-Ramond, C. Magen, Béatrice Pécassou, Robin Cours, et al.. Structural and magnetic properties of He+ irradiated Co2MnSi Heusler alloys. Materials Research Express, IOP Publishing Ltd, 2016, 3 (4), pp.046101. 〈10.1088/2053-1591/3/4/046101〉. 〈hal-01718887〉
  • Bin Han, Yasuo Shimizu, Gabriele Seguini, Elisa Arduca, Celia Castro, et al.. Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography. RSC Advances, Royal Society of Chemistry, 2016, 6 (5), pp.3617-3622. 〈10.1039/c5ra26710b〉. 〈hal-01720446〉
  • D.P. Simatos, P. Dimitrakis, P. Normand, N. Nikolaou, K. Giannakopoulos, et al.. Temperature dependent retention characteristics of ion-beam modified SONOS memories. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.66-69. 〈10.1016/j.nimb.2015.04.007〉. 〈hal-01718635〉
  • N. Nikolaou, V. Ioannou-Sougleridis, P. Dimitrakis, P. Normand, D. Skarlatos, et al.. Nitrogen induced modifications of MANOS memory properties. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.61-65. 〈10.1016/j.nimb.2015.04.015〉. 〈hal-01718634〉
  • Alessandro Pugliara, Kremena Makasheva, Bernard Despax, Maxime Bayle, Robert Carles, et al.. Assessing bio-available silver released from silver nanoparticles embedded in silica layers using the green algae Chlamydomonas reinhardtii as bio-sensors. Science of the Total Environment, Elsevier, 2015, 565, pp.863-871. 〈10.1016/j.scitotenv.2016.02.141〉. 〈hal-01718633〉
  • Maxime Bayle, J. Grisolia, Gérard Benassayag, Béatrice Pécassou, Caroline Bonafos, et al.. Electron transport through a metallic nanoparticle assembly embedded in SiO2 and SiNx by low energy ion implantation. physica status solidi (c), Wiley, 2015, 〈10.1002/pssc.201510147〉. 〈hal-01241243〉
  • Robert Carles, Maxime Bayle, Patrizio Benzo, Gérard Benassayag, Caroline Bonafos, et al.. Plasmon-resonant Raman spectroscopy in metallic nanoparticles: Surface-enhanced scattering by electronic excitations. Physical Review B : Condensed matter and materials physics, American Physical Society, 2015, 92 (17), pp.174302 - 174302. 〈10.1103/PhysRevB.92.174302〉. 〈hal-01718632〉
  • Maxime Bayle, Caroline Bonafos, Patrizio Benzo, Gérard Benassayag, Béatrice Pécassou, et al.. Ag doped silicon nitride nanocomposites for embedded plasmonics. Applied Physics Letters, American Institute of Physics, 2015, 107 (10), 〈10.1063/1.4930940〉. 〈hal-01241265〉
  • Gradimir N. Misevic, Gérard Benassayag, Bernard Rasser, Philippe Salles, Jovana Simic-Krstic, et al.. Design and construction of wall-less nano-electrophoretic and nano in micro array high throughput devices for single cell 'omics' single molecule detection analyses. Journal of Molecular Structure, 2014, 1073 (C), pp.142-149. 〈10.1016/j.molstruc.2014.05.011〉. 〈hal-01718636〉
  • Michele Perego, Andrea Andreozzi, Gabriele Seguini, Sylvie Schamm-Chardon, Celia Castro, et al.. Silicon crystallization in nanodot arrays organized by block copolymer lithography. Journal of Nanoparticle Research, 2014, 16 (12), 〈10.1007/s11051-014-2775-6〉. 〈hal-01718638〉
  • Maxime Bayle, Patrizio Benzo, Nicolas Combe, Christophe Gatel, Caroline Bonafos, et al.. Experimental investigation of the vibrational density of states and electronic excitations in metallic nanocrystals. Physical Review B : Condensed matter and materials physics, American Physical Society, 2014, 89 (19), 〈10.1103/PhysRevB.89.195402〉. 〈hal-01718637〉
  • Celia Castro, Sylvie Schamm-Chardon, Béatrice Pécassou, A. Andreozzi, G. Seguini, et al.. In-plane organization of silicon nanocrystals embedded in SiO2 thin films. Nanotechnology, Institute of Physics, 2013, 24 (7), 〈10.1088/0957-4484/24/7/075302〉. 〈hal-01745011〉
  • Paolo Pellegrino, Michele Perego, Sylvie Schamm-Chardon, Gabriele Seguini, Andrea Andreozzi, et al.. Fabrication of well-ordered arrays of silicon nanocrystals using a block copolymer mask. physica status solidi (a), Wiley, 2013, 210 (8), pp.1477-1484. 〈10.1002/pssa.201300030〉. 〈hal-01745010〉
  • P. Dimitrakis, P. Normand, V. Ioannou-Sougleridis, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Quantumdots for memory applications. physica status solidi (a), Wiley, 2013, 210 (8), pp.1490-1504. 〈10.1002/pssa.201300029〉. 〈hal-01745006〉
  • G. Seguini, Celia Castro, Sylvie Schamm-Chardon, Gérard Benassayag, P. Pellegrino, et al.. Scaling size of the interplay between quantum confinement and surface related effects in nanostructured silicon. Applied Physics Letters, American Institute of Physics, 2013, 103 (2), pp.023103. 〈10.1063/1.4813743〉. 〈hal-01745007〉
  • R. Diaz, C. Suarez, Arnaud Arbouet, Renaud Marty, Vincent Paillard, et al.. Implantation energy effect on photoluminescence spectroscopy of Si nanocrystals locally fabricated by stencil-masked ultra-low-energy ion-beam-synthesis in silica. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 272, pp.53-56. 〈10.1016/j.nimb.2011.01.031〉. 〈hal-01745016〉
  • Caroline Bonafos, Marzia Carrada, Gérard Benassayag, Sylvie Schamm-Chardon, Jesse Groenen, et al.. Si and Ge nanocrystals for future memory devices. Materials Science in Semiconductor Processing, Elsevier, 2012, 15 (6), pp.615-626. 〈10.1016/j.mssp.2012.09.004〉. 〈hal-01745013〉
  • R. Diaz, J. Grisolia, Gérard Benassayag, Sylvie Schamm-Chardon, Celia Castro, et al.. Extraction of the characteristics of Si nanocrystals by the charge pumping technique. Nanotechnology, Institute of Physics, 2012, 23 (8), 〈10.1088/0957-4484/23/8/085206〉. 〈hal-01745017〉
  • Caroline Bonafos, F. Gloux, Pierre-Eugène Coulon, Jesse Groenen, Sylvie Schamm-Chardon, et al.. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2010, 1250, p. G01-07. 〈hal-00562346〉
  • Pier Francesco Fazzini, Fuccio Cristiano, E. Talbot, Gérard Benassayag, S. Paul, et al.. Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2338 - 2341. 〈10.1016/j.tsf.2009.09.172〉. 〈hal-01633467〉
  • Alain Claverie, S. Koffel, Nikolay Cherkashin, Gérard Benassayag, P. Scheiblin. Amorphization, recrystallization and end of range defects in germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2307--2313. 〈10.1016/j.tsf.2009.09.162〉. 〈hal-01736049〉
  • Pierre-Eugène Coulon, K. Chan Shin Yu, Sylvie Schamm-Chardon, Gérard Benassayag, Béatrice Pécassou, et al.. Ultra-low energy ion implantation of Si into HfO2-based structures for non volatile memory applications. Materials Research Society Symposia Proceedings, 2009, 1160, pp.H01-03. 〈hal-00697605〉
  • N. Nikolaou, P. Dimitrakis, P. Normand, Sylvie Schamm-Chardon, Caroline Bonafos, et al.. Temperature-dependent low electric field charging of Si nanocrystals embedded within oxide-nitride-oxide dielectric stacks. Nanotechnology, Institute of Physics, 2009, 20 (30), 〈10.1088/0957-4484/20/30/305704〉. 〈hal-01745029〉
  • S. Koffel, Nikolay Cherkashin, Florent Houdellier, Martin Hÿtch, Gérard Benassayag, et al.. End of range defects in Ge. Journal of Applied Physics, American Institute of Physics, 2009, 105, pp.126110. 〈10.1063/1.3153985〉. 〈hal-01736054〉
  • P. Dimitrakis, A. Mouti, Caroline Bonafos, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low-energy ion-beam-synthesis of Ge nanocrystals in thin ALD Al2O3 layers for memory applications. Microelectronic Engineering, Elsevier, 2009, 86 (7-9), pp.1838-1841. 〈10.1016/j.mee.2009.03.074〉. 〈hal-01745030〉
  • J. Grisolia, C. Dumas, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Silicon nanoparticles synthesized in SiO2 pockets by stencil-masked low energy ion implantation and thermal annealing. Superlattices and Microstructures, Elsevier, 2008, 44 (4-5), pp.395-401. 〈10.1016/j.spmi.2007.12.013〉. 〈hal-01745035〉
  • Sylvie Schamm-Chardon, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, Marzia Carrada, et al.. Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS. Ultramicroscopy, Elsevier, 2008, 108 (4), pp.346--357. 〈10.1016/j.ultramic.2007.05.008〉. 〈hal-01736064〉
  • C. Dumas, L. Ressier, J. Grisolia, Arnaud Arbouet, Vincent Paillard, et al.. KFM detection of charges injected by AFM into a thin SiO2 layer containing Si nanocrystals. Microelectronic Engineering, Elsevier, 2008, 85 (12), pp.2358-2361. 〈10.1016/j.mee.2008.09.027〉. 〈hal-01745038〉
  • D. Mathiot, M. Perego, M. Fanciulli, Gérard Benassayag. Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2. Nucl. Instr. and Meth. B, 2007, 254, pp. 139-142. 〈hal-00128445〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V. Em Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis. Nanotechnology, Institute of Physics, 2007, 18 (21), 〈10.1088/0957-4484/18/21/215204〉. 〈hal-01745043〉
  • C. Dumas, J. Grisolia, Gérard Benassayag, Caroline Bonafos, Sylvie Schamm-Chardon, et al.. Influence of the thickness of the tunnel layer on the charging characteristics of Si nanocrystals embedded in an ultra-thin SiO2 layer. Physica E: Low-dimensional Systems and Nanostructures, Elsevier, 2007, 38 (1-2), pp.80-84. 〈10.1016/j.physe.2006.12.026〉. 〈hal-01745045〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks. Applied Physics Letters, American Institute of Physics, 2007, 90 (26), pp.263513. 〈10.1063/1.2752769〉. 〈hal-01736066〉
  • O. Jambois, Josep Carreras, A. Perez-Rodriguez, B. Garrido, Caroline Bonafos, et al.. Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers. Applied Physics Letters, American Institute of Physics, 2007, 91 (21), pp.211105 - 253124. 〈10.1063/1.2807281〉. 〈hal-01745044〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation. Microelectronic Engineering, Elsevier, 2007, 84 (9-10), pp.1986--1989. 〈10.1016/j.mee.2007.04.068〉. 〈hal-01736069〉
  • A. Claverie, Caroline Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of nanocrystal memory devices by ultra low energy ion implantation. Defect Diffus. Forum, 2006, 258-260, pp.531-541. 〈hal-00204809〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers . Journal of Applied Physics, American Institute of Physics, 2006, 99 (4), pp.044302. 〈10.1063/1.2171785〉. 〈hal-01736074〉
  • Arnaud Arbouet, Marzia Carrada, François Demangeot, Vincent Paillard, Gérard Benassayag, et al.. Photoluminescence characterization of few-nanocrystals electronic devices. Journal of Luminescence, Elsevier, 2006, 121 (2), pp.340-343. 〈10.1016/j.jlumin.2006.08.070〉. 〈hal-01745048〉
  • O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Perez-Rodriguez, et al.. White electroluminescence from C- and Si-rich thin silicon oxides. Applied Physics Letters, American Institute of Physics, 2006, 89 (25), pp.253124 - 253124. 〈10.1063/1.2423244〉. 〈hal-01745047〉
  • Nikolay Cherkashin, Caroline Bonafos, H. Coffin, Marzia Carrada, Sylvie Schamm-Chardon, et al.. Fabrication of nanocrystal memories by ultra low energy ion implantation. physica status solidi (c), Wiley, 2005, 2 (6), pp.1907--1911. 〈10.1002/pssc.200460523〉. 〈hal-01736090〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. The effects of oxidation conditions on structural and electrical properties of silicon nanoparticles obtained by ultra-low-energy ion implantation. Nanotechnology, Institute of Physics, 2005, 16 (12), pp.2987-2992. 〈10.1088/0957-4484/16/12/043〉. 〈hal-01745049〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Marzia Carrada, Nikolay Cherkashin, et al.. Si nanocrystals by ultra-low energy ion implantation for non-volatile memory applications. Materials Science and Engineering: B, Elsevier, 2005, 124-125, pp.499--503. 〈10.1016/j.mseb.2005.08.129〉. 〈hal-01736081〉
  • J Grisolia, M Shalchian, Gérard Benassayag, H. Coffin, Caroline Bonafos, et al.. Oxidation effects on transport characteristics of nanoscale MOS capacitors with an embedded layer of silicon nanocrystals obtained by low energy ion implantation. Materials Science and Engineering: B, Elsevier, 2005, 124, pp.494-498. 〈10.1016/j.mseb.2005.08.082〉. 〈hal-01745050〉
  • Caroline Bonafos, H. Coffin, Sylvie Schamm-Chardon, Nikolay Cherkashin, Gérard Benassayag, et al.. Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications. Solid-State Electronics, Elsevier, 2005, 49 (11), pp.1734--1744. 〈10.1016/j.sse.2005.10.001〉. 〈hal-01736088〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, et al.. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.228-238. 〈10.1016/j.nimb.2003.11.039〉. 〈hal-01736094〉
  • Caroline Bonafos, Marzia Carrada, Nikolay Cherkashin, H. Coffin, D. Chassaing, et al.. Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation. Journal of Applied Physics, American Institute of Physics, 2004, 95 (10), pp.5696-5702. 〈10.1063/1.1695594〉. 〈hal-01736103〉
  • T. Müller, K.-H. Heinig, W. Möller, Caroline Bonafos, H. Coffin, et al.. Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology. Applied Physics Letters, American Institute of Physics, 2004, 85 (12), pp.2373-2375. 〈hal-01736097〉
  • Marzia Carrada, Nikolay Cherkashin, Caroline Bonafos, Gérard Benassayag, D. Chassaing, et al.. Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesised in thin SiO2 layers. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2003, 101 (1-3), pp.204-207. 〈10.1016/S0921-5107(02)00724-9〉. 〈hal-01736116〉
  • T. Müller, K.-H. Heinig, Caroline Bonafos, H. Coffin, Nikolay Cherkashin, et al.. Multi-Dot Floating-Gates in MOSFETs for nonvolatile memories - Their ion beam synthesis and morphology. Materials Research Society Symposium - Proceedings, 2003, 792, pp.333-338. 〈10.1557/PROC-792-R8.7〉. 〈hal-01736111〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Tsoukalas, K. Beltsios, et al.. Effect of annealing environment on the memory properties of thin oxides with embedded si nanocrystals obtained by low-energy ion-beam synthesis. Applied Physics Letters, American Institute of Physics, 2003, 83 (1), pp.168-170. 〈10.1063/1.1588378〉. 〈hal-01736112〉
  • P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, D. Tsoukalas, et al.. Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis. Microelectronic Engineering, Elsevier, 2003, 67-68, pp.629-634. 〈10.1016/S0167-9317(03)00124-2〉. 〈hal-01736114〉
  • M. Benguerba, A. Brunelle, S. Della-Negra, J. Depauw, H. Joret, et al.. Impact of slow gold clusters on various solids: nonlinear effects in secondary ion emission. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 1991, 62, pp.8-22. 〈in2p3-00016202〉
  • Gérard Benassayag, Jean Orloff, L. Swanson. FOCUSED DROPLET BEAM FROM A GOLD LIQUID METAL ION SOURCE. Journal de Physique Colloques, 1986, 47 (C7), pp.C7-389-C7-397. 〈10.1051/jphyscol:1986766〉. 〈jpa-00225961〉
  • P. Sudraud, Jean Orloff, Gérard Benassayag. THE EFFECT OF CARBON BEARING GASES AND SECONDARY ELECTRON BOMBARDMENT ON A LIQUID METAL ION SOURCE. Journal de Physique Colloques, 1986, 47 (C7), pp.C7-381-C7-387. 〈10.1051/jphyscol:1986765〉. 〈jpa-00225960〉
  • Gérard Benassayag, P. Sudraud. LMIS ENERGY BROADENING INTERPRETATION SUPPORTED BY HV-TEM OBSERVATIONS. Journal de Physique Colloques, 1984, 45 (C9), pp.C9-223-C9-226. 〈10.1051/jphyscol:1984937〉. 〈jpa-00224417〉

Communication dans un congrès21 documents

  • E. Navarro, Caroline Bonafos, Alessandro Pugliara, Maxime Bayle, Patrizio Benzo, et al.. The use of biosensors for improving the development of nanotechnology under realistic-use scenarios: Applications for cheaper and more effective silver nanoparticles and nanostructured surfaces. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC) , 2016, Unknown, Unknown Region. Institute of Electrical and Electronics Engineers Inc., 2016, 〈10.1109/NMDC.2016.7777152〉. 〈hal-01718631〉
  • Caroline Bonafos, Alessandro Pugliara, Maxime Bayle, Patrizio Benzo, Assia Haj Salem, et al.. Multifunctional metallic nanoparticles embedded in dielectrics . Colloque « Nano−scaled Systems for Energy Harvesting », Feb 2016, Chennai, India. 〈hal-01767857〉
  • K. Kallel, Arnaud Arbouet, Peter Wiecha, Zhao Yu, Marzia Carrada, et al.. Photoluminescence enhancement of a silicon nanocrystal plane positioned in the near field of a silicon nanowire.. ECS Spring Meeting, nanoscale luminescent materials, May 2014, Orlando Floride, United States. 〈hal-01773874〉
  • Vincent Paillard, Hatem Kallel, Arnaud Arbouet, Peter Wiecha, Yu Zhao, et al.. Photoluminescence enhancement of a silicon nanocrystal plane positioned in the near field of a silicon nanowire.. ECS Spring Meeting, nanoscale luminescent materials, May 2014, Orlando -Floride, United States. 〈hal-01769052〉
  • Houssem Kallel, Peter Wiecha, Yu Zhao, Arnaud Arbouet, Marzia Carrada, et al.. Photoluminescence enhancement of a silicon nanocrystal plane positioned in the nearfield of a silicon nanowire. Mascher P., Lockwood D.J. The Materials Science of Nanoluminescence, 2014, Unknown, Unknown Region. Electrochemical Society Inc., 61 (5), pp.189-197, 2014, 〈10.1149/06105.0189ecst〉. 〈hal-01763392〉
  • V. Ioannou-Sougleridis, P. Dimitrakis, P. Normand, N. Nikolaou, D. Simatos, et al.. Modifications of silicon nitride materials for SONOS memories. 2013 International Semiconductor Conference (CAS), Oct 2013, Sinaia, Romania. pp.3-10, 2013, 〈10.1109/SMICND.2013.6688073〉. 〈hal-01745076〉
  • Celia Castro, A. Andreozzi, Gérard Benassayag, Ana Beltran, G. Seguini, et al.. EFTEM studies on the localization of silicon nanocrystals embedded in SiO2 for nano-devices. Proceeding of the 15th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 〈hal-00720334〉
  • Caroline Bonafos, F. Gloux, Pierre-Eugène Coulon, Jesse Groenen, Sylvie Schamm-Chardon, et al.. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications. Material Research Society (MRS) Spring Meeting, Symposium on Materials and Physics for Nonvolatile Memories II, Apr 2010, San Francisco, United States. pp.ISBN 978-1-60511-226-8, 2010. 〈hal-00590517〉
  • G. Ghibaudo, M. Mouis, L. Pham-Nguyen, K. Bennamane, I. Pappas, et al.. Electrical Transport characterization of nano CMOS devices with ultra-thin silicon film.. to be published, IEEE Conference Proceedings (2009), 2009, kyoto, Japan. International Workshop on Junction Technology (IWJT2009), 2009. 〈hal-00603879〉
  • G. Ghibaudo, M. Mouis, L. Pham-Nguyen, K. Bennamane, I. Pappas, et al.. Drift-diffusion and Ballistic Mobility Characterization in Nano CMOS Devices. GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, May 2009, Orsay, France. GDR Nanoélectronique, Atelier, De la réalité et de l'intérêt du transport balistique dans les composants nanoélectroniques, 2009. 〈hal-00604959〉
  • Pierre-Eugène Coulon, Kristel Chan Shin Yu, Sylvie Schamm-Chardon, Gérard Benassayag, Béatrice Pécassou, et al.. Ultra-Low Energy Ion Implantation of Si Into HfO(2)-Based Layers for Non Volatile Memory Applications. Symposium H – Materials and Physics for Nonvolatile Memories, Apr 2009, San Francisco, United States. 1160, pp.3-10, 2009, 〈10.1557/PROC-1160-H01-03〉. 〈hal-01745027〉
  • Pierre-Eugène Coulon, B.S. Sahu, Marzia Carrada, Sylvie Schamm-Chardon, Gérard Benassayag, et al.. Ultra-low energy ion implantation of Si and Ge into HfO2-based layers for non volatile memory applications. 39th IEEE European Solid-State Device Research Conference (ESSDERC 2009), Sep 2009, ATHENES, Greece. 〈hal-00463965〉
  • Régis Diaz, Carine Dumas, Jérémie Grisolia, Thierry Ondarçuhu, Sylvie Schamm-Chardon, et al.. Localized Silicon Nanocrystals Fabricated by Stencil Masked Low Energy Ion Implantation: Effect of the Stencil Aperture Size on the Implanted Dose. Symposium H – Materials and Physics for Nonvolatile Memories) , 2009, indéterminée, Unknown Region. 1160, pp.61-66, 2009, 〈10.1557/PROC-1160-H04-05〉. 〈hal-01745034〉
  • Vassilios Ioannou-Sougleridis, Panagiotis Dimitrakis, Vassilios Em. Vamvakas, Pascal Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with embedded Si-nanoparticles fabricated by low-energy ion-beam-synthesis. Material Research Society 2007, Apr 2007, San Francisco, United States. 997, pp. 121-125, 2007, 〈10.1557/PROC-0997-I03-10 〉. 〈hal-01745041〉
  • Caroline Bonafos, Sylvie Schamm-Chardon, A. Mouti, P. Dimitrakis, V. Ioannou-Sougleridis, et al.. Low-Energy Ion-Beam-Synthesis of Semiconductor Nanocrystals in Very Thin High-k Layers for Memory Applications. 15th Conference on Microscopy of Semiconducting Materials, Apr 2007, Cambridge, United Kingdom. 120, pp.321-324, 2008, 〈10.1007/978-1-4020-8615-1_70〉. 〈hal-01745036〉
  • O. Jambois, A. Perez-Rodriguez, P. Pellegrino, Josep Carreras, M. Peralvarez, et al.. Electroluminescence from C- and Si- rich silicon oxides in continuous wave and pulsed excitation. 2007 Spanish Conference on Electron Devices, Jan 2007, Madrid, Spain. pp.1-4, 2007, 〈10.1109/SCED.2007.383982〉. 〈hal-01745077〉
  • A. Claverie, Caroline Bonafos, Gérard Benassayag, Sylvie Schamm-Chardon, Nikolay Cherkashin, et al.. Materials science issues for the fabrication of naocrystal memory devices by ultra low energy ion implantation. 2nd International Conference on Diffusion in Solids and Liquids, DSL-2006, 2006, Aveiro, Portugal. 2006. 〈hal-00115744〉
  • Caroline Bonafos, Nikolay Cherkashin, Marzia Carrada, H. Coffin, Gérard Benassayag, et al.. Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. 830, pp.217-222, 2005, 〈10.1557/PROC-830-D5.2〉. 〈hal-01736091〉
  • H. Coffin, Caroline Bonafos, Sylvie Schamm-Chardon, Nikolay Cherkashin, M. Respaud, et al.. Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO2 layers. Symposium D – Materials and Processes for Nonvolatile Memories, 2005, indéterminée, Unknown Region. 830, pp.281-286, 2005, 〈10.1557/PROC-830-D6.6〉. 〈hal-01736087〉
  • M. Perego, S. Ferrari, M. Fanciulli, D. Mathiot, K.H. Heinig, et al.. 2D-arrays of Si nanocrystals embedded in thin SiO2 layers for new memory devices. INFMeeting 2004, Jun 2004, Genova, Italy. 2004. 〈hal-00134298〉
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Chapitre d'ouvrage2 documents

  • Alain Claverie, Caroline Bonafos, Robert Carles, Sylvie Schamm-Chardon, Arnaud Arbouet, et al.. Synthesis and Packaging of Nanocrystals by Ultra Low Energy Ion Implantation for Applications in Electronics, Optics and Plasmonics. Synthesis and Engineering of Nanostructures by Energetic Ions, Nova Science, Chap. 9, pp. 153-172, 2011. 〈hprints-01745455〉
  • C. Dumas, J. Grisolia, Marzia Carrada, Arnaud Arbouet, Vincent Paillard, et al.. Photoluminescence spectroscopy and transport electrical measurements reveal the quantized features of Si nanocrystals embedded in an ultra thin SiO2 layer. Physica Status Solidi C - Current Topics in Solid State Physics, Vol 4, No 2, 4, pp.311-315, 2007, 〈10.1002/pssc.200673272〉. 〈hal-01745040〉