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	Pour les 49 documents Envoyer sur ORCID RSS ATOM Exporter BibTeX XML-TEI CSV RTF EndNote PDF HTML Export avancé	Page : Page précédente 1 2 Page suivante	triés par Pertinence Auteur A→Z Auteur Z→A Titre A→Z Titre Z→A Date de publication croissante Date de publication décroissante Date de dépôt croissante Date de dépôt décroissante

		Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor Gérard Ghibaudo , Georges Pananakakis International Workshop on Semi-conducting Nanometerials for Health, Environment and Security Applications, Nov 2018, Grenoble, France Communication dans un congrès hal-02052299v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Modeling of the programming window distribution in multinanocrystals memories L. Perniola , B. de Salvo , G. Ghibaudo , A. Foglio Para , G. Pananakakis , et al. IEEE Transactions on Nanotechnology, 2003, VOL. 2, NO. 4, p. 277, (2003) Article dans une revue hal-00477194v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Analytical compact model for quantization in undoped double-gate metal oxide semiconductor field effect transistors and its impact on quasi-ballistic current M. Ferrier R. Clerc G. Pananakakis G. Ghibaudo F. Boeuf T. Skotnicki Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 2006, 45, pp.3088 Article dans une revue hal-00145092v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo 2008 International Conference on Solid State Devices and Materials, Sep 2008, -, France Communication dans un congrès hal-00391924v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Analytical model for subband engineering in undoped double gate MOSFETs M. Ferrier R. Clerc G. Pananakakis G. Ghibaudo F. Boeuf T. Skotnicki SSDM 2005, 2005, XX, pp.XX Article dans une revue hal-00146187v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Modélisation analytique tridimensionnelle de l'injection optique de porteurs dans un substrat semiconducteur R. Gary , A. Perron , Jean-Daniel Arnould , G. Pananakakis Telecom'2005 & 4èmes Journées Franco-Maghrébines des Microondes et leurs Applications, 2005, France. pp.XX Communication dans un congrès hal-00149033v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices A. Zaka , Q. Rafhay , M. Iellina , P. Palestri , R. Clerc , et al. Solid-State Electronics, 2010, 54 (12), pp.1669-1674 Article dans une revue hal-00596340v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures S. Altazin , R. Clerc , R. Gwoziecki , G. Ghibaudo , G. Pananakakis , et al. International Conference on Organic Electronics 2009, Jun 2009, Liverpool, United Kingdom Communication dans un congrès hal-00603796v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs A. Tsormpatzoglou , C.A. Dimitriadis , R. Clerc , G. Pananakakis , G. Ghibaudo physica status solidi (c), 2008, 5 (12), pp.3605-3608 Article dans une revue hal-00391594v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Modelling of the Programming Window Distribution in Multi Nanocrystals Memories Luca Perniola , Barbara De Salvo , Gérard Ghibaudo , Armando Foglio Para , Georges Pananakakis , et al. ESSDERC, 2003, Lisbon, Portugal. ⟨10.1109/TNANO.2003.820782⟩ Communication dans un congrès hal-00485165v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs M. Ferrier , Raphael Clerc , L. Lucci , Quentin Rafhay , Georges Pananakakis , et al. IEEE Transactions on Nanotechnology, 2007, 6 (6), pp.613-621 Article dans une revue hal-01957720v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors Q. Rafhay , R. Clerc , J. Coignus , G. Pananakakis , G. Ghibaudo Int. Conference on Ultimate Integration of Silicon, Mar 2010, Glasgow, UK, United Kingdom Communication dans un congrès hal-00604652v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Compact drain current model of short-channel cylindrical gate-all-around MOSFETs A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis Semiconductor Science and Technology, 2009, 24, pp.075017 Article dans une revue hal-00596143v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials Q. Rafhay , R. Clerc , M. Ferrier , G. Pananakakis , G. Ghibaudo Solid-State Electronics, 2008, 52 (Issue 4), pp.540-547 Article dans une revue hal-00391540v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories Marc Bocquet , G. Molas , L. Perniola , X. Garros , J. Buckley , et al. 38th European Solid-State Device Research Conference (ESSDERC'08), Edinburgh, UK, Sep 2008, Edinburgh, France Communication dans un congrès hal-00392558v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes T. Dutta , Q. Rafhay , R. Clerc , J. Lacord , S. Monfray , et al. Solid-State Electronics, 2013, 88, pp.43-48. ⟨10.1016/j.sse.2013.04.007⟩ Article dans une revue istex hal-01002086v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs D.H. Tassis , A. Tsormpatzoglou , C.A. Dimitriadis , G. Ghibaudo , G. Pananakakis , et al. Microelectronic Engineering, 2010, 87, pp.23534-2357 Article dans une revue hal-00596325v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering Alban Zaka , Pierpaolo Palestri , Quentin Rafhay , Raphael Clerc , Matteo Iellina , et al. IEEE Transactions on Electron Devices, 2012, 59 (4), pp.983-993 Article dans une revue hal-01959366v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Origins of the short channel effects increase in III-V nMOSFET technologies T. Dutta , Quentin Rafhay , R. Clerc , J. Lacord , S. Monfray , et al. 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France Communication dans un congrès hal-01959380v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic Stacks S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , J. M. Verilhac , et al. International Electron Device Meeting, Dec 2009, Balitimore, United States Communication dans un congrès hal-00603814v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap J. Buckley , Marc Bocquet , G. Molas , M. Gely , P. Brianceau , et al. NVMsIEDM 2006, 2006, San Francisco, United States. pp.XX Communication dans un congrès hal-00147137v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Contact Resistance in Top Gate / Bottom Contact OTFTs. S. Altazin , R. Clerc , R. Gwoziecki , D. Boudinet , G. Ghibaudo , et al. Int. Conference on Organics Electronics, 2010, Paris, France Communication dans un congrès hal-00604542v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Reliability of charge trapping memories with high-k control dielectrics G. Molas , Marc Bocquet , E. Vianello , L. Perniola , H. Grampeix , et al. Microelectronic Engineering, 2009, 86, pp.1796-1803 Article dans une revue hal-00596125v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Recuit pulsé de semiconducteurs par hyperfréquences. Etude de la répartition de la puissance dans l'échantillon H. Jaouen , P. Chenevier , G. Kamarinos , G. Pananakakis Revue de Physique Appliquée, 1984, 19 (4), pp.319-323. ⟨10.1051/rphysap:01984001904031900⟩ Article dans une revue istex jpa-00245199v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Electronic properties of Al-SiO2-(n or p) Si MIS tunnel diodes J. Vuillod , G. Pananakakis Revue de Physique Appliquée, 1985, 20 (1), pp.37-44. ⟨10.1051/rphysap:0198500200103700⟩ Article dans une revue istex jpa-00245301v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Influence of kinetic and electrostatic properties of interface states on the efficiency of a MIS tunnel solar cell G. Pananakakis , G. Kamarinos , P. Viktorovitch Revue de Physique Appliquée, 1979, 14 (5), pp.639-647. ⟨10.1051/rphysap:01979001405063900⟩ Article dans une revue istex jpa-00244642v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Reliability of charge trapping memories with high-k control dielectrics G. Molas , Marc Bocquet , H. Grampeix , J.P. Colonna , L. Masarotto , et al. 5th International Symposium on Advanced Gate Stack Technology, Austin, Texas, Sep 2008, Austin, United States Communication dans un congrès hal-00392559v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials Q. Rafhay , R. Clerc , G. Pananakakis , G. Ghibaudo 4th EUROSOI Workshop, Jan 2008, EUROSOI, France. pp.43-44 Communication dans un congrès hal-00391957v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories. G. Molas , Marc Bocquet , J. Buckley , H. Grampeix , M. Gély , et al. Microelectronic Engineering, 2008, 85, 2393-2399 Article dans une revue hal-00391751v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More
		Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs Q. Rafhay , R. Clerc , G. Ghibaudo , G. Pananakakis Solid-State Electronics, 2008, 52 (Issue 10), pp.1474-1481 Article dans une revue hal-00391582v1	Envoyer sur ORCID Exporter BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite Export avancé Partager Gmail Facebook X LinkedIn More

Filtrer vos résultats

Analytical expression of top surface charge sensitivity in fully depleted semiconductor on insulator MOS transistor

Modeling of the programming window distribution in multinanocrystals memories

Analytical compact model for quantization in undoped double-gate metal oxide semiconductor field effect transistors and its impact on quasi-ballistic current

Source-to-Drain vs. Band-to-Band Tunneling in Ultra-Scaled DG nMOSFETs with Alternative Channel Materials

Analytical model for subband engineering in undoped double gate MOSFETs

Modélisation analytique tridimensionnelle de l'injection optique de porteurs dans un substrat semiconducteur

On the Accuracy of Current TCAD Hot Carrier Injection Models in Nanoscale Devices

Impact of Ohmic Contacts on Space Charge Limited Currents in Au / Pentacene / Au Structures

Semi-analytical modelling of short channel effects in Si Double-Gate, Tri-Gate and Gate-All-Around MOSFETs

Modelling of the Programming Window Distribution in Multi Nanocrystals Memories

Conventional Technological Boosters for Injection Velocity in Ultrathin-Body MOSFETs

Dark Space, Quantum Capacitance and Inversion Capacitance in Si, Ge, GaAs and In0.53Ga0.47As nMOS Capacitors

Compact drain current model of short-channel cylindrical gate-all-around MOSFETs

Impact of Channel Orientation on Ballistic Current of nDGFETs with Alternative Channel Materials

On the Role of a HTO/Al2O3 Bi-Layer Blocking Oxide in Nitride-Trap Non-Volatile Memories

Impact of quantum effects on the short channel effects of III-V nMOSFETs in weak and strong inversion regimes

Source/drain optimization of underlapped lightly doped nanoscale double gate MOSFETs

An Efficient Nonlocal Hot Electron Model Accounting for Electron–Electron Scattering

Origins of the short channel effects increase in III-V nMOSFET technologies

Vertical Transport in Spin Coated Ultra Thin Polycrystalline Pentacene Organic Stacks

In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap

Contact Resistance in Top Gate / Bottom Contact OTFTs.

Reliability of charge trapping memories with high-k control dielectrics

Recuit pulsé de semiconducteurs par hyperfréquences. Etude de la répartition de la puissance dans l'échantillon

Electronic properties of Al-SiO2-(n or p) Si MIS tunnel diodes

Influence of kinetic and electrostatic properties of interface states on the efficiency of a MIS tunnel solar cell

Reliability of charge trapping memories with high-k control dielectrics

Estimations of the Ion-Ioff Performances of Nano nMOSFETs with Alternative Channels Materials

Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories.

Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs