Geoffroy Kremer

Maître de conférences. Département Physique de la Matière et des Matériaux. Institut Jean Lamour - UMR 7198 - Université de Lorraine/CNRS. Equipe 102, Surfaces, Spectroscopies et Modélisations

96%

Libre accès

Documents

Affiliations actuelles

104710

Identifiants chercheurs

geoffroy-kremer
0000-0003-1753-3471
IdRef : 23446352X
Google Scholar : https://scholar.google.fr/citations?user=LSJcrNwAAAAJ
VIAF : 170157098339572550668

Présentation

Domaines de recherche

Science des matériaux [cond-mat.mtrl-sci] Physique [physics] Electrons fortement corrélés [cond-mat.str-el]

Compétences

Physique des surfaces Photoémission résolue en temps Photoémission résolue en angle Matière condensée Matériaux 2D Ferroélectricité Systèmes Rashba

Publications

	Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature Frédéric Chassot , Aki Pulkkinen , Geoffroy Kremer , Tetiana Zakusylo , Gauthier Krizman Nano Letters, 2024, 24 (1), pp.82-88. ⟨10.1021/acs.nanolett.3c03280⟩ Article dans une revue hal-04194728v2
	Gap collapse and flat band induced by uniaxial strain in 1T-TaS2 Christopher W. Nicholson , Francesco Petocchi , Bjoern Salzmann , Catherine Witteveen , Maxime Rumo Physical Review B, 2024, 109 (3), pp.035167. ⟨10.1103/physrevb.109.035167⟩ Article dans une revue hal-04431369v1
	Van der Waals epitaxy of Weyl-semimetal Td-WTe2 Alexandre Llopez , Frédéric Leroy , Calvin Tagne-Kaegom , Boris Croes , Adrien Michon ACS Applied Materials & Interfaces, 2024, ⟨10.1021/acsami.4c00676⟩ Article dans une revue hal-04542981v1
	Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition Aymen Mahmoudi , Meryem Bouaziz , Anis Chiout , Gaia Di Berardino , Nathan Ullberg Physical Review B, 2023, 108 (4), pp.045417. ⟨10.1103/PhysRevB.108.045417⟩ Article dans une revue hal-04302594v1
	Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride Meryem Bouaziz , Aymen Mahmoudi , Geoffroy Kremer , Julien Chaste , César González Physical Review Research, 2023, 5 (3), pp.033152. ⟨10.1103/PhysRevResearch.5.033152⟩ Article dans une revue hal-04190986v2
	Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure Aymen Mahmoudi , Meryem Bouaziz , Niels Chapuis , Geoffroy Kremer , Julien Chaste ACS Nano, 2023, 17, pp.21307 - 21316. ⟨10.1021/acsnano.3c05818⟩ Article dans une revue hal-04302601v1
	Direct observation of highly anisotropic electronic and optical nature in indium telluride Geoffroy Kremer , Aymen Mahmoudi , Meryem Bouaziz , Cléophanie Brochard-Richard , Lama Khalil Physical Review Materials, 2023, 7 (7), pp.074601. ⟨10.1103/physrevmaterials.7.074601⟩ Article dans une revue hal-04159938v1
	Carrier-Density Control of the Quantum-Confined 1T-TiSe2 Charge Density Wave Thomas Jaouen , Aki Pulkkinen , Maxime Rumo , Geoffroy Kremer , Björn Salzmann Physical Review Letters, 2023, 130 (22), pp.226401. ⟨10.1103/physrevlett.130.226401⟩ Article dans une revue hal-04113005v1
	Protection of Ising spin-orbit coupling in bulk misfit superconductors Tomáš Samuely , Darshana Wickramaratne , Martin Gmitra , Thomas Jaouen , Ondrej Šofranko Physical Review B, 2023, 108 (22), pp.L220501. ⟨10.1103/physrevb.108.l220501⟩ Article dans une revue hal-04325007v2
	Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3 Geoffroy Kremer , Aymen Mahmoudi , A. M'Foukh , Meryem Bouaziz , Mehrdad Rahimi ACS Nano, 2023, ⟨10.1021/acsnano.3c04186⟩ Article dans une revue hal-04179830v1
	α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene Lama Khalil , Pietro Maria Forcella , Geoffroy Kremer , Federico Bisti , Julien Chaste Physical Review B, 2022, 106 (12), pp.125152. ⟨10.1103/physrevb.106.125152⟩ Article dans une revue hal-03865011v1
	Electron-momentum dependence of electron-phonon coupling underlies dramatic phonon renormalization in YNi2B2C Philipp Kurzhals , Geoffroy Kremer , Thomas Jaouen , Christopher Nicholson , Rolf Heid Nature Communications, 2022, 13 (1), pp.228. ⟨10.1038/s41467-021-27843-y⟩ Article dans une revue hal-03521119v1
	Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric α-GeTe(111) Geoffroy Kremer , Julian Maklar , Laurent Nicolaï , Christopher W. Nicholson , Changming Yue Nature Communications, 2022, 13, pp.6396. ⟨10.1038/s41467-022-33978-3⟩ Article dans une revue hal-03833989v2
	Insensitivity of the striped charge orders in IrTe 2 to alkali surface doping implies their structural origin Maxime Rumo , Aki Pulkkinen , Bjoern Salzmann , Geoffroy Kremer , Baptiste Hildebrand Physical Review Materials, 2021, 5 (7), pp.074002. ⟨10.1103/PhysRevMaterials.5.074002⟩ Article dans une revue hal-03277839v1
	Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2 Christopher W. Nicholson , Maxime Rumo , Aki Pulkkinen , Geoffroy Kremer , Björn Salzmann Communications Materials, 2021, 2 (25), ⟨10.1038/s43246-021-00130-5⟩ Article dans une revue hal-03157775v1
	Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide Geoffroy Kremer , Juan Camilo Alvarez Quiceno , Thomas Pierron , Cesar Gonzalez Pascual , M. Sicot 2D Materials, 2021, 8 (3), pp.035021. ⟨10.1088/2053-1583/abf715⟩ Article dans une revue hal-03218918v1
	Ultrafast dynamics of the surface photovoltage in potassium-doped black phosphorus Geoffroy Kremer , Maxime Rumo , Changming Yue , Aki Pulkkinen , Christopher Nicholson Physical Review B, 2021, 104 (3), pp.035125. ⟨10.1103/PhysRevB.104.035125⟩ Article dans une revue hal-03285155v2
	Misfit Layer Compounds: A Platform for Heavily Doped 2D Transition Metal Dichalcogenides Raphaël T. Leriche , Alexandra Palacio‐morales , Marco Campetella , Cesare Tresca , Shunsuke Sasaki Advanced Functional Materials, 2021, 31 (6), pp.2007706. ⟨10.1002/adfm.202007706⟩ Article dans une revue hal-02993227v1
	Examining the surface phase diagram of IrTe 2 with photoemission Maxime Rumo , Christopher W. Nicholson , Aki Pulkkinen , Baptiste Hildebrand , Geoffroy Kremer Physical Review B, 2020, 101 (23), pp.235120. ⟨10.1103/PhysRevB.101.235120⟩ Article dans une revue hal-02961505v1
	Adsorption-Induced Kondo Effect in Metal-Free Phthalocyanine on Ag(111) Julien Granet , Muriel Sicot , Iann C Gerber , Geoffroy Kremer , Thomas Pierron Journal of Physical Chemistry C, 2020, 124 (19), pp.10441-10452. ⟨10.1021/acs.jpcc.9b11141⟩ Article dans une revue hal-03079564v1
	Carbon‐Assisted Stable Silver Nanostructures S. Narjes Abdollahi , Efraín Ochoa Martínez , Cédric Kilchoer , Geoffroy Kremer , Thomas Jaouen Advanced Materials Interfaces, 2020, 7 (23), pp.2001227. ⟨10.1002/admi.202001227⟩ Article dans une revue hal-02974866v1
	Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric α − GeTe ( 111 ) by alkali doping Geoffroy Kremer , Thomas Jaouen , Bjoern Salzmann , Laurent Nicolaï , Maxime Rumo Physical Review Research, 2020, 2 (3), ⟨10.1103/PhysRevResearch.2.033115⟩ Article dans une revue hal-02961511v1
	Electronic Structure of Heavy Halogen Atoms Adsorbed on the Cu(111) Surface: A Combined ARPES and First Principles Calculations Study Won June Kim , Sarah Xing , Geoffroy Kremer , Muriel Sicot , Bertrand Kierren Journal of Physical Chemistry C, 2019, 123 (43), pp.26309-26314. ⟨10.1021/acs.jpcc.9b07057⟩ Article dans une revue hal-02345890v1
	Recovery of surface state bands after desorption of Te capping layer on (Bi_1−xSb_x)₂Te₃ ternary topological insulators Geoffroy Kremer , Kejing Zhu , Thomas Pierron , Vincent Fournee , Julian Ledieu Journal of Physics D: Applied Physics, 2019, 52 (49), pp.494002. ⟨10.1088/1361-6463/ab3fc3⟩ Article dans une revue hal-02999617v1
	Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001) Geoffroy Kremer , Juan Camilo Alvarez Quiceno , Simone Lisi , Thomas Pierron , César Gonzalez Pascual ACS Nano, 2019, 13 (4), pp.4720-4730. ⟨10.1021/acsnano.9b01028⟩ Article dans une revue hal-02131222v1

	Prospective analysis of optoelectronic properties of ZnSnN2 for future tandem solar cells Thibaut Perin , Nathaniel Feldberg , Nicole Fèvre , Geoffroy Kremer , Sylvain Le Gall 7e Journées Nationales du Photovoltaïque 2017, Fédération de recherche du Photovoltaïque, Dec 2017, Dourdan, France Communication dans un congrès hal-01633190v1

	Installation d’un nouveau dispositif de photoémission résolue en angle et en spin, et étude des propriétés électroniques de matériaux artificiels aux propriétés remarquables Geoffroy Kremer Science des matériaux [cond-mat.mtrl-sci]. Université de Lorraine, 2018. Français. ⟨NNT : 2018LORR0293⟩ Thèse tel-02111626v1

Geoffroy Kremer

Présentation

Domaines de recherche

Compétences

Publications

Persistence of structural distortion and bulk band Rashba splitting in SnTe above its ferroelectric critical temperature

Gap collapse and flat band induced by uniaxial strain in 1T-TaS2

Van der Waals epitaxy of Weyl-semimetal Td-WTe2

Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor deposition

Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluride

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe2 on GaP(111) Heterostructure

Direct observation of highly anisotropic electronic and optical nature in indium telluride

Carrier-Density Control of the Quantum-Confined 1T-TiSe2 Charge Density Wave

Protection of Ising spin-orbit coupling in bulk misfit superconductors

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In2Se3

α−As2Te3 as a platform for the exploration of the electronic band structure of single layer β−tellurene

Electron-momentum dependence of electron-phonon coupling underlies dramatic phonon renormalization in YNi2B2C

Field-induced ultrafast modulation of Rashba coupling at room temperature in ferroelectric α-GeTe(111)

Insensitivity of the striped charge orders in IrTe 2 to alkali surface doping implies their structural origin

Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2

Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide

Ultrafast dynamics of the surface photovoltage in potassium-doped black phosphorus

Misfit Layer Compounds: A Platform for Heavily Doped 2D Transition Metal Dichalcogenides

Examining the surface phase diagram of IrTe 2 with photoemission

Adsorption-Induced Kondo Effect in Metal-Free Phthalocyanine on Ag(111)

Carbon‐Assisted Stable Silver Nanostructures

Unveiling the complete dispersion of the giant Rashba split surface states of ferroelectric α − GeTe ( 111 ) by alkali doping

Electronic Structure of Heavy Halogen Atoms Adsorbed on the Cu(111) Surface: A Combined ARPES and First Principles Calculations Study

Recovery of surface state bands after desorption of Te capping layer on (Bi1−xSbx)2Te3 ternary topological insulators

Electronic Band Structure of Ultimately Thin Silicon Oxide on Ru(0001)

Prospective analysis of optoelectronic properties of ZnSnN2 for future tandem solar cells

Installation d’un nouveau dispositif de photoémission résolue en angle et en spin, et étude des propriétés électroniques de matériaux artificiels aux propriétés remarquables

Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe₂ on GaP(111) Heterostructure

Recovery of surface state bands after desorption of Te capping layer on (Bi_1−xSb_x)₂Te₃ ternary topological insulators