Nombre de documents

83

Gaël Gautier


 

Gaël Gautier is a professor of electronics at INSA-Centre Val de Loire (Campus of Blois). He was born in 1976 and received in 1999 an engineering diploma in opto-electronics of INSA (Rennes) and a M. Res. degree in fundamental physics. He received his PhD in microelectronics from the University of Rennes in 2002. His research interests in GREMAN (Research Group in Materials Microelectronics Acoustics and nanotechnologies) of Tours University are focused on the study of electrochemical synthesis of innovative materials for microelectronic devices, in particular porous silicon. He is author or co-author of more than 80 peer-reviewed articles and book chapters in the field of porous silicon and its application in microelectronics and energy microsources. In addition, he has 6 international patents or patents pending in this field. He is in charge of a project on a new specialization in the field of renewable energies in the INSA-CVL. He is also deputy director of the EMSTU (Energy, Materials, Earth and Universe Sciences) doctoral school (Blois-Tours-Orléans).

 


Article dans une revue63 documents

  • Nathanaël Grillon, Emilien Bouyssou, Sebastien Jacques, Gaël Gautier. Cycle life and statistical predictive reliability model for all-solid-state thin film microbatteries. Microelectronics Reliability, Elsevier, 2019, 93, pp.102-108. 〈hal-01997427〉
  • Bin Lu, Samuel Menard, Benjamin Morillon, Daniel Alquier, Gael Gautier. Investigation of Porous Silicon-Based Edge Termination for Planar-Type TRIAC. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (2), pp.655 - 659. 〈10.1109/TED.2017.2786143〉. 〈hal-01740927〉
  • Rongxiang Wu, Niteng Liao, Johnny Sin, Benjamin Bardet, Jérôme Billoue, et al.. A Silicon-Embedded Inductor Surrounded by Porous Silicon for Improved Quality Factor. ECS Journal of Solid State Science and Technology, 2018, 7 (6), pp.Q112-Q115. 〈hal-02010242〉
  • Mathieu Lepesant, Benjamin Bardet, Lise-Marie Lacroix, Pierre Fau, Cyril Garnero, et al.. Impregnation of High-Magnetization FeCo Nanoparticles in Mesoporous Silicon: An Experimental Approach. Frontiers in Chemistry, Frontiers, 2018, 6. 〈hal-02001841〉
  • B. Bardet, S. Desplobain, Jérôme Billoue, L. Ventura, Gaël Gautier. Integration of low-loss inductors on thin porous silicon membranes. Microelectronic Engineering, Elsevier, 2018, 194, pp.96 - 99. 〈10.1016/j.mee.2018.03.020〉. 〈hal-01771559〉
  • Benjamin Bardet, Thomas Defforge, Beatrice Negulescu, Damien Valente, Jérôme Billoue, et al.. Shape-controlled electrochemical synthesis of mesoporous Si/Fe nanocomposites with tailored ferromagnetic properties. Materials chemistry frontiers, Royal Society of Chemistry, 2017, 1 (1), pp.190 - 196. 〈10.1039/c6qm00040a〉. 〈hal-01741022〉
  • Amer Melhem, Domingos De Sousa Meneses, Caroline Andreazza-Vignolle, Thomas Defforge, Gael Gautier, et al.. Structural, Optical and Thermo-physical Properties of Mesoporous Silicon Layers: Influence of Substrate Characteristics. Journal of Physical Chemistry C, American Chemical Society, 2017, 〈10.1021/acs.jpcc.6b13101〉. 〈hal-01495490〉
  • J. Lascaud, Thomas Defforge, Dominique Certon, D. Valente, Gaël Gautier. In-depth porosity control of mesoporous silicon layers by an anodization current adjustment. Journal of Applied Physics, American Institute of Physics, 2017, 122 (21), 〈10.1063/1.4997228〉. 〈hal-01741078〉
  • Bálint Fodor, Thomas Defforge, Emil Agócs, Miklós Fried, Gaël Gautier, et al.. Spectroscopic ellipsometry of columnar porous Si thin films and Si nanowires. Applied Surface Science, Elsevier, 2017, 421, pp.397 - 404. 〈10.1016/j.apsusc.2016.12.063〉. 〈hal-01792014〉
  • Angélique Fèvre, Samuel Menard, Thomas Defforge, Gaël Gautier. Porous Silicon Formation by Hole Injection from a Back Side p + /n Junction for Electrical Insulation Applications. Semiconductor Science and Technology, IOP Publishing, 2016, 31 (1), pp.014001. 〈hal-01784761〉
  • Marie Capelle, Jérôme Billoue, Joël Concord, Patrick Poveda, Gaël Gautier. Monolithic integration of low-pass filters with ESD protections on p+ silicon/porous silicon substrates. Solid-State Electronics, Elsevier, 2016, 116, 〈10.1016/j.sse.2015.11.026〉. 〈hal-01310324〉
  • Benjamin Bardet, Domingos De Sousa Meneses, Thomas Defforge, Jérôme Billoue, Gaël Gautier. In situ investigation of mesoporous silicon oxidation kinetics using infrared emittance spectroscopy. Physical Chemistry Chemical Physics, Royal Society of Chemistry, 2016, 18, pp.18201-18208. 〈10.1039/c6cp02086k〉. 〈hal-01740923〉
  • Bin Lu, Gaël Gautier, Damien Valente, Benjamin Morillon, Daniel Alquier. Etching Optimization of Post Aluminum-Silicon Thermomigration Process Residues. Microelectronic Engineering, 2016, 149, pp.97-105. 〈10.1016/j.mee.2015.10.004〉. 〈hal-01784760〉
  • Balint Fodor, Emil Agocs, Benjamin Bardet, Thomas Defforge, Frederic Cayrel, et al.. Porosity and Thickness Characterization of Porous Si and Oxidized Porous Si layers – an ultraviolet-visible-mid Infrared Ellipsometry Study. Microporous and Mesoporous Materials, 2016, 227, pp.112-120. 〈10.1016/j.micromeso.2016.02.039〉. 〈hal-01784759〉
  • Jinmyoung Joo, Thomas Defforge, Armando Loni, Dokyoung Kim, Z.Y. Li, et al.. Enhanced quantum yield of photoluminescent porous silicon prepared by supercritical drying. Applied Physics Letters, American Institute of Physics, 2016, 108 (15), 〈10.1063/1.4947084〉. 〈hal-01792031〉
  • Bin Lu, Thomas Defforge, Bálint Fodor, Benjamin Morillon, Daniel Alquier, et al.. Optimized plasma-polymerized fluoropolymer mask for local porous silicon formation. Journal of Applied Physics, American Institute of Physics, 2016, 119 (21), 〈10.1063/1.4953088〉. 〈hal-01792035〉
  • Abderazek Talbi, Agnès Petit, Amer Melhem, Arnaud Stolz, Chantal Boulmer-Leborgne, et al.. Nanoparticles based laser-induced surface structures formation on mesoporous silicon by picosecond laser beam interaction. Applied Surface Science, Elsevier, 2016, 〈10.1016/j.apsusc.2015.09.003〉. 〈hal-01214265〉
  • Erwann Luais, Fouad Ghamouss, Jérôme Wolfman, Sébastien Desplobain, Gael Gautier, et al.. Mesoporous Silicon Negative Electrode for Thin Film Lithium-Ion Microbatteries. Journal of Power Sources, 2015, 274, pp.693-700. 〈10.1016/j.jpowsour.2014.10.084〉. 〈hal-01831013〉
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gael Gautier. Porous Silicon/Silicon Hybrid Substrate Applied to the Monolithic Integration of Common-Mode and Bandpass RF Filters. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (12), pp.4169-4173. 〈10.1109/TED.2015.2483840〉. 〈hal-01784767〉
  • Gaël Gautier, Sébastien Kouassi. Integration of porous silicon in microfuel cells: a review. International Journal of Energy Research, Wiley, 2015, 39 (1), pp.1 - 25. 〈10.1002/er.3206〉. 〈hal-01741027〉
  • Raoudha Haddad, Jessica Thery, Bernard Gauthier-Manuel, Kamal Elouarzaki, Michael Holzinger, et al.. High performance miniature glucose/O2 fuel cell based on porous silicon anion exchange membrane. Electrochemistry Communications, Elsevier, 2015, 54, pp.10 - 13. 〈10.1016/j.elecom.2015.02.010〉. 〈hal-01651064〉
  • Samuel Ménard, Angélique Fèvre, Jérôme Billoue, Gael Gautier. P Type Porous Silicon Resistivity and Carrier Transport. Journal of Applied Physics, 2015, 118 (10), pp.105703. 〈10.1063/1.4930222〉. 〈hal-01784762〉
  • Marie Capelle, Jérôme Billoue, Thomas Defforge, Patrick Poveda, Gael Gautier. Evaluation of Mesoporous Silicon Substrates Strain for the Integration of Radio Frequency Circuits. Thin Solid Films, 2015, 585, pp.66-71. 〈10.1016/j.tsf.2015.04.022〉. 〈hal-01784771〉
  • Armando Loni, L. T. Canham, Thomas Defforge, Gael Gautier. Supercritically-Dried Porous Silicon Powders with Surface Areas Exceeding 1000 M2/G. ECS Journal of Solid State Science and Technology, 2015, 4 (8), pp.289-292. 〈10.1149/2.0031508jss〉. 〈hal-01784765〉
  • Armando Loni, Thomas Defforge, E. Caffull, Gael Gautier, L.T. Canham. Porous Silicon Fabrication by Anodisation: Progress towards the Realisation of Layers and Powders with High Surface Area and Micropore Content. Microporous and Mesoporous Materials, 2015, 213, pp.188-191. 〈10.1016/j.micromeso.2015.03.006〉. 〈hal-01784772〉
  • Amer Melhem, Thomas Defforge, Domingos De Sousa Meneses, Caroline Andreazza-Vignolle, Gael Gautier, et al.. Structural, Optical, and Thermal Analysis of n-Type Mesoporous Silicon Prepared by Electrochemical Etching. Journal of Physical Chemistry C, American Chemical Society, 2015, 〈10.1021/acs.jpcc.5b04984〉. 〈hal-01214262〉
  • Vincent Chaudoy, Erwann Luais, Fouad Ghamouss, Thomas Defforge, Sébastien Desplobain, et al.. Anode Based on Porous Silicon Films Using Polymer Electrolyte for Lithium-Ion Microbatteries. ECS Transactions, Electrochemical Society, Inc., 2015, 66 (8), pp.31-39. 〈10.1149/06608.0031ecst〉. 〈hal-01831016〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Ultrasonic Characterization of Electrochemically Etched Porous Silicon. Japanese Journal of Applied Physics, 2014, 53 (6), pp.060308. 〈hal-01831024〉
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gaël Gautier. Study of Porous Silicon Substrates for the Monolithic Integration of Radiofrequency Circuits. International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2014, 6 (1), pp.39-43. 〈10.1017/S1759078713001050〉. 〈hal-01784776〉
  • Gaël Gautier, Philippe Leduc. Porous silicon for electrical isolation in radio frequency devices: A review. Applied Physics Reviews, 2014, 1 (1), 〈10.1063/1.4833575〉. 〈hal-01741021〉
  • Gaël Gautier, Jérôme Biscarrat, Thomas Defforge, Angélique Fèvre, Damien Valente, et al.. Investigation of Direct Current Electrical Properties of Electrochemically Etched Mesoporous Silicon Carbide. Journal of Applied Physics, 2014, 116 (22), pp.223705. 〈10.1063/1.4904085〉. 〈hal-01784775〉
  • Sébastien Jacques, Samuel Ménard, Gaël Gautier. New Field Stopper Process to Strengthen Double MESA-GLASS AC Switches' Reliability During Rugged Application Environments. Advances in Microelectronic Engineering, 2014, 2 (3), pp.8. 〈hal-01784780〉
  • Nathanaël Grillon, Emilien Bouyssou, Steve Dimitri Fabre, Bernard Lestriez, Dominique Guyomard, et al.. Extended Electrochemical Reliability Study of All-Solid-State Thin Film Microbatteries. ECS Transactions, Electrochemical Society, Inc., 2014, 61 (27), pp.137-143. 〈10.1149/06127.0137ecst〉. 〈hal-01784777〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Ultrasonic characterization of electrochemically etched porous silicon. Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2014, 53 (6), 〈10.7567/JJAP.53.060308〉. 〈hal-01255201〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Ultrasonic characterization of porous silicon using a genetic algorithm to solve the inverse problem. NDT International, Elsevier, 2013, 62, pp.93-98. 〈10.1016/j.ndteint.2013.11.007〉. 〈hal-01080736〉
  • Erwann Luais, Joe Sakai, Sébastien Desplobain, Gaël Gautier, François Tran-Van, et al.. Thin and Flexible Silicon Anode Based on Integrated Macroporous Silicon Film onto Electrodeposited Copper Current Collector. Journal of Power Sources, 2013, 242, pp.166-170. 〈10.1016/j.jpowsour.2013.04.158〉. 〈hal-01831025〉
  • Gaël Gautier, Damien Valente, Jérôme Biscarrat, A. Yvon. Observations of Macroporous Gallium Nitride Electrochemically Etched from High Doped Single Crystal Wafers in HF Based Electrolytes. ECS Journal of Solid State Science and Technology, 2013, 2 (4), pp.P146-P148. 〈10.1149/2.019304jss〉. 〈hal-01810900〉
  • Thomas Defforge, Loïc Coudron, Olivier Ménard, Virginie Grimal, Gaël Gautier, et al.. Copper Electrodeposition into Macroporous Silicon Arrays for through Silicon via Applications. Microelectronic Engineering, 2013, 106, pp.160-163. 〈10.1016/j.mee.2013.01.014〉. 〈hal-01810902〉
  • G. Gautier, R. Serra, Jean-Mathieu Mencik. Vibratory diagnosis by finite element model updating and operational modal analysis. Mechanics & Industry, EDP Sciences, 2013, 14 (2), pp.145 - 149. 〈10.1051/meca/2013055〉. 〈hal-01709775〉
  • Gaël Gautier, Jérôme Biscarrat, Damien Valente, Thomas Defforge, A. Gary, et al.. Systematic Study of Anodic Etching of Highly Doped N-Type 4H-SiC in Various HF Based Electrolytes. Journal of The Electrochemical Society, Electrochemical Society, 2013, 160 (9), pp.D372-D379. 〈10.1149/2.082309jes〉. 〈hal-01810897〉
  • Thomas Defforge, Marianne Diatta, Damien Valente, François Tran-Van, Gaël Gautier. Role of Electrolyte Additives during Electrochemical Etching of Macropore Arrays in Low-Doped Silicon. Journal of The Electrochemical Society, Electrochemical Society, 2013, 160 (4), pp.H247-H251. 〈10.1149/2.013306jes〉. 〈hal-01810901〉
  • Gaël Gautier, Marie Capelle, Jérôme Billoue, Frédéric Cayrel, Patrick Poveda. RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide. IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2012, 33 (4), pp.477-479. 〈10.1109/LED.2012.2185478〉. 〈hal-01810907〉
  • Thomas Defforge, Marie Capelle, François Tran-Van, Gaël Gautier. Plasma-deposited fluoropolymer film mask for local porous silicon formation. Nanoscale Research Letters, 2012, 7 (1), pp.344. 〈10.1186/1556-276X-7-344〉. 〈hal-01810905〉
  • Gaël Gautier, Frédéric Cayrel, Marie Capelle, Jérôme Billoue, Xi Song, et al.. Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces. Nanoscale Research Letters, 2012, 7 (1), pp.367-373. 〈10.1186/1556-276X-7-367〉. 〈hal-01810904〉
  • Thomas Defforge, Jérôme Billoue, Marianne Diatta, François Tran-Van, Gaël Gautier. Copper-selective electrochemical filling of macropore arrays for through-silicon via applications. Nanoscale Research Letters, 2012, 7 (1), pp.375. 〈10.1186/1556-276X-7-375〉. 〈hal-01810906〉
  • Samuel Menard, Angélique Fèvre, Damien Valente, Jérôme Billoue, Gaël Gautier. Non-Oxidized Porous Silicon-Based Power AC Switch Peripheries. Nanoscale Research Letters, 2012, 7 (1), pp.566-576. 〈10.1186/1556-276X-7-566〉. 〈hal-01810908〉
  • Marie Capelle, Jérôme Billoue, Patrick Poveda, Gaël Gautier. RF performances of inductors integrated on localized p+-type porous silicon regions. Nanoscale Research Letters, 2012, 7 (1), pp.523-530. 〈10.1186/1556-276X-7-523〉. 〈hal-01810921〉
  • Gaël Gautier, Sébastien Kouassi, Sébastien Desplobain, Laurent Ventura. Macroporous Silicon Hydrogen Diffusion Layers for Micro-Fuel Cells: From Planar to 3D Structures. Microelectronic Engineering, 2012, 90, pp.79-82. 〈10.1016/j.mee.2011.04.003〉. 〈hal-01810911〉
  • Sébastien Kouassi, Gaël Gautier, Jessica Thery, Sébastien Desplobain, Mathias Borella, et al.. Proton Exchange Membrane Micro Fuel Cells on 3D Porous Silicon Gas Diffusion Layers. Journal of Power Sources, 2012, 216, pp.15-21. 〈10.1016/j.jpowsour.2012.05.046〉. 〈hal-01810903〉
  • Laurent Siegert, Marie Capelle, Fabrice Roqueta, Vladimir Lysenko, Gaël Gautier. Evaluation of Mesoporous Silicon Thermal Conductivity by Electrothermal Finite Element Simulation. Nanoscale Research Letters, SpringerOpen, 2012, 7 (1), pp.427. 〈10.1186/1556-276X-7-427〉. 〈hal-01810918〉
  • Thomas Defforge, Gaël Gautier, Thomas Tillocher, Remi Dussart, François Tran-Van. Elaboration of high aspect ratio monocrystalline silicon suspended nanobridges by low temperature alkaline treatment of dry etched trenches. Journal of Vacuum Science and Technology A, American Vacuum Society, 2012, 30 (1), pp.010601. 〈10.1116/1.3665217〉. 〈hal-00655000〉
  • E Amin-Chalhoub, N Semmar, L Coudron, G Gautier, C Boulmer-Leborgne, et al.. Thermal conductivity measurement of porous silicon by the pulsed-photothermal method. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (35), pp.355401. 〈10.1088/0022-3727/44/35/355401〉. 〈hal-00649058〉
  • Eliane Amin-Chalhoub, Nadjib Semmar, Loïc Coudron, Gaël Gautier, Chantal Boulmer-Leborgne, et al.. Thermal conductivity measurement of porous silicon by pulsed-photothermal method. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44, pp.355401. 〈hal-00623107〉
  • Thomas Defforge, Xi Song, Gaël Gautier, Thomas Tillocher, Remi Dussart, et al.. Scalloping removal on DRIE via using low concentrated alkaline solutions at low temperature. Sensors and Actuators A: Physical , Elsevier, 2011, 170 (1-2), pp.114. 〈10.1016/j.sna.2011.05.028〉. 〈hal-00655001〉
  • David Leroy, R. Thouvarecq, G. Gautier. Postural organisation during cascade juggling: Influence of expertise. Gait & Posture, 2008, 28 (2), pp.265-270. 〈hal-01982209〉
  • Sébastien Kouassi, Gaël Gautier, Laurent Ventura, Chantal Boulmer-Leborgne, Bernard Morillon, et al.. Innovative electrochemical deep etching technique involving aluminum thermomigration. phys.stat.sol.(C), 2007, 4 (6), pp.2175. 〈hal-00256833〉
  • Gaël Gautier, Laurent Ventura, Robert Jerisian, Sébastien Kouassi, Chantal Leborgne, et al.. Deep trench etching combining aluminium thermomigration and electrochemical silicon dissolution. Applied Physics Letters, American Institute of Physics, 2006, 88, pp.212501-3. 〈hal-00097748〉
  • G. Gautier, L. Ventura, T. Pordie, Regis Rogel, R. Jérisian. Fabrication of deep single trenches from N-type macroporous silicon. Thin Solid Films, Elsevier, 2005, 487, pp.283-287. 〈hal-00772793〉
  • G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Towards Complementary Metal-Oxide Silicon Thin-Film Devices with a New Structure. Solid State Phenomena, 2003, 93, pp.429-434. 〈hal-00913000〉
  • Regis Rogel, G. Gautier, Nathalie Coulon, Michel Sarret, Olivier Bonnaud. Influence of precursor on LPCVD polysilicon TFT's characteristics. Thin Solid Films, Elsevier, 2003, 427, pp.108-112. 〈hal-00913123〉
  • G. Gautier, Nathalie Coulon, C.E. Viana, Samuel Crand, Regis Rogel, et al.. Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HMDSO). Polycristalline Semiconductors VI, 2002, 2002-23, pp.55-62. 〈hal-00933274〉
  • Tayeb Mohammed-Brahim, A. Rahal, G. Gautier, F. Raoult, H. Toutah, et al.. Study of the stability of polycristalline silicon by means of the behavior of thin film transistors under gate bias stress. journal of non -Crystalline solids, 2002, 299-302, pp.497-501. 〈hal-00934150〉
  • T Mostefaoui, Sylvain Laube, G Gautier, C Rebrion-Rowe, Bertrand Rowe, et al.. The dissociative recombination of NO+ : the influence of the vibrational excitation state. Journal of Physics B: Atomic and Molecular Physics, Institute of Physics (IOP), 1999, 32 (22), pp.5247-5256. 〈10.1088/0953-4075/32/22/303〉. 〈hal-01290322〉

Communication dans un congrès16 documents

  • Abderazek Talbi, Amer Melhem, Agnes Petit, Sostaine Kaya-Boussougou, Chantal Boulmer-Leborgne, et al.. Investigation of surface interference between LIPSS and nano-pores in case of mesopouros silicon induced by pico and femto-second laser beams. 1st International Conference on Applied Surface Science (ICASS), Jul 2015, Shangai, China. 〈http://www.icassconference.com〉. 〈hal-01147788〉
  • Julien Bustillo, Mathieu Domenjoud, Jérôme Fortineau, Gael Gautier, Marc Lethiecq. Determination of microscopic parameters of piezoceramic materials under electrical loading using genetic algorithm. IEEE International Symposium on the Applications of Ferroelectrics and Piezoresponse Force Microscopy, May 2014, Penn State, United States. 〈10.1109/ISAF.2014.6922964〉. 〈hal-01235821〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Ultrasonic investigation of mesoporous silicon. PSST 2014, Mar 2014, Alicante, Spain. 〈hal-01255222〉
  • Julien Bustillo, Gaël Gautier, Jérôme Fortineau, Laurianne Blanc. Caractérisation Ultrasonore de silicium poreux. S2P, Jul 2014, Tours, France. 〈hal-01255332〉
  • Julien Bustillo, Mathieu Domenjoud, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Characterisation of soft and hard piezoceramic materials using genetic algorithm based optimisation. Electroceramics for End-users, Mar 2013, Les Arcs, France. 〈hal-01235846〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Caractérisation ultrasonore du silicium poreux. JAPSUS 2013, Jun 2013, Montpellier, France. 〈hal-01255339〉
  • Julien Bustillo, Jérôme Fortineau, Gaël Gautier, Marc Lethiecq. Ultrasonic Characterization of Electrochemically Etched Porous Silicon. International Congress on Ultrasonics, May 2013, Singapore, Singapore. 〈hal-01255327〉
  • Julien Bustillo, Jérôme Fortineau, Marie Capelle, François Vander Meulen, Lionel Haumesser, et al.. Porosity evaluation of PoSi wafer using a nondestructive ultrasonic technic. Société Française d'Acoustique. Acoustics 2012, Apr 2012, Nantes, France. 2012. 〈hal-00810963〉
  • G. Gautier, Samuel Crand, Olivier Bonnaud. Dynamic electrical characterization of CMOS-like thin film transistor circuits. Microelectronics Systems Education Conference (MSE), Jun 2003, Anaheim, United States. 2003. 〈hal-00916737〉
  • G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Comparison of NMOS and CMOS TFT inverters fabricated by LPCVD and SPC techniques at low temperature (<600 B0C). ICCDS 922002, Apr 2002, Aruba, Netherlands Antilles. 2002. 〈hal-00944715〉
  • G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Polysilicon CMOS TFTs inverters fabricated with a new structure using SPC and LPCVD techniques. POLYSE, Sep 2002, Nara, Japan. 2002. 〈hal-00944724〉
  • G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HDMO). ElectroChem. Soc. TFTVI, Oct 2002, Salt Lake City, United States. 2002. 〈hal-00944710〉
  • G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Towards Complementary Metal-Oxide -Silicon Thin Film Devices with a New Structure. POLYSE 2002, Sep 2002, Nara, Japan. 2002. 〈hal-00944720〉
  • C.E. Viana, G. Gautier, Samuel Crand, N.I. Morimoto, Olivier Bonnaud. Polycrystalline CMOS TFT's Low Temperature (<600 B°) Fabrication Process by LPCVD and SPC Techniques. Proc. IDMC 922002, Jan 2002, Seoul, South Korea. pp.421-423, 2002. 〈hal-00958880〉
  • Samuel Crand, G. Gautier, Olivier Bonnaud. Mise en place d'un banc de caractérisation dynamique de circuits CMOS en couches minces. 7éme Journées Pédagogiques du CNFM, Nov 2002, Saint Malo, France. 2002. 〈hal-00959357〉
  • Régis Rogel, G. Gautier, Nathalie Coulon, Michel Sarret, Olivier Bonnaud. Influence of precursor gases on LPCVD polysilicon TFT 92s characteristics. E-MRS 2002, Spring meeting, Jun 2002, Strasbourg, France. 2002. 〈hal-00958794〉

Poster3 documents

  • Abderazek Talbi, Agnès Petit, Sostaine Kaya-Boussougou, Chantal Boulmer-Leborgne, Gael Gautier, et al.. Interference between LIPSS and nano-pores in case of mesoporous silicon induced by pico and femto-second laser beams. 2015 E-MRS Spring Meeting, May 2015, Lille, France. 〈http://www.emrs-strasbourg.com〉. 〈hal-01147892〉
  • Amer Melhem, Domingos De Sousa Meneses, Caroline Andreazza, Thomas Defforge, Gael Gautier, et al.. ➢Structural, optical and thermal investigations of mesoporous silicon substrate prepared by electrochemical etching. Porous Semiconductors-Science and Technology (PSST) Conferences, Mar 2014, Benidorm, Spain. 〈http://www.the-psst.com/index.php?conference=PSST&schedConf=2014〉. 〈hal-01147791〉
  • Amer Melhem, Thomas Defforge, Domingos De Sousa Meneses, Caroline Andreazza, Gael Gautier, et al.. Structural, optical and thermal investigations of meso-porous silicon substrate prepared by electrochemical etching. Nanosmat Conference 2013, Sep 2013, Grenade, Spain. 〈http://www.nanosmat-conference.com〉. 〈hal-01147790〉

Autre publication1 document

  • Samuel Crand, G. Gautier, Olivier Bonnaud. Dynamic electrical characterization of CMOS-like Thin Film Transistor circuits. IEEE MSE'03; Poster; Conf. Proc. Pp 14-15; Anaheim (Californie-USA). 2003. 〈hal-00927727〉