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Two-dimensional defect mapping of the SiO 2 / 4 H − SiC interface

 Judith Woerle , Brett Johnson , Corrado Bongiorno , Kohei Yamasue , Gabriel Ferro , et al.
Physical Review Materials, 2019, 3 (8), pp.084602. ⟨10.1103/physrevmaterials.3.084602⟩
Article dans une revue hal-02322052v1

Optical Study of Ge Incorporation in Cubic SiC Layers Grown by VLS

 Nada Habka , Veronique Souliere , Jean Marie M Bluet , Maher Soueidan , Gabriel Ferro , et al.
ICSCRM 2007, Oct 2007, Otsu, Japan. pp.529-532, ⟨10.4028/www.scientific.net/MSF.600-603.529⟩
Communication dans un congrès hal-02875529v1

Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

 Didier Chaussende , Gabriel Ferro , Yves Monteil
Journal of Crystal Growth, 2002, 234, pp.63-69
Article dans une revue hal-00187136v1

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

 Nikoletta Jegenyes , Jean Lorenzzi , Véronique Soulière , Jacques Dazord , François Cauwet , et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.127-130, ⟨10.4028/www.scientific.net/MSF.645-648.127⟩
Communication dans un congrès hal-02864840v1
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Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti3SiC2 Phase

 Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Christophe Raynaud , et al.
Materials Science Forum, 2016, 858, pp.553-556. ⟨10.4028/www.scientific.net/MSF.858.553⟩
Article dans une revue hal-01388027v1
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A Study on the Chemistry of Epitaxial Ti3SiC2 Formation on 4H-SiC Using Al-Ti Annealing

 Tony Abi-Tannous , Maher Soueidan , Gabriel Ferro , Mihai Lazar , Berangère Toury , et al.
Materials Science Forum, 2015, 821-823, pp.432-435. ⟨10.4028/www.scientific.net/MSF.821-823.432⟩
Article dans une revue hal-01391858v1

Characterization of a 3C-SiC single domain grown on 6H-SiC(0001) by a vapor-liquid-solid mechanism

 Maher Soueidan , Gabriel Ferro , B. Nsouli , Mohamad Roumie , Efsthatios Polychroniadis , et al.
Crystal Growth & Design, 2006, 6 (11), pp.2598-2602. ⟨10.1021/cg0603523⟩
Article dans une revue hal-00389882v1

Defect-induced polytype transformations in LPE grown SiC epilayers on (111) 3C-SiC seeds grown by VLS on 6H-SiC

 Maya Marinova , Georgios Zoulis , Teddy Robert , Frederic Mercier , Alkioni Mantzari , et al.
25th International Conference on Defects in Semiconductors, Jul 2009, St Petersburg (RUSSIA), France. pp.4727-4730
Communication dans un congrès hal-00543681v1

Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts

 Maher Soueidan , Gabriel Ferro , Christophe Jacquier , Philippe Godignon , J. Pezoldt , et al.
Diamond and Related Materials, 2007, 16, pp.37-45. ⟨10.1016/j.diamond.2006.03.015⟩
Article dans une revue istex hal-00188186v1

Synthèse et caractérisation de nanotubes et nanofils inorganiques. Etude du dopage d’un nanofil de SiC par spectroscopie Raman

 Mikhael Bechelany , A. Brioude , Gabriel Ferro , Samuel Bernard , P. Stadelmann , et al.
GDR NANOFILS ET NANOTUBES SEMICONDUCTEURS, 2ème workshop, May 2007, Ecully, France
Communication dans un congrès hal-01710627v1

4H-SiC(0001) Surface Faceting during Interaction with Liquid Si

 Véronique Soulière , Davy Carole , Massimo Camarda , Judith Woerle , Ulrike Grossner , et al.
Materials Science Forum, 2016, 858, pp.163-166. ⟨10.4028/www.scientific.net/MSF.858.163⟩
Article dans une revue hal-02735337v1
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Very High Sustainable Forward Current Densities on 4H-SiC p-n Junctions Formed by VLS Localized Epitaxy of Heavily Al-Doped p++ Emitters

 Selsabil Sejil , Loïc Lalouat , Mihai Lazar , Davy Carole , Christian Brylinski , et al.
Materials Science Forum, 2017, 897, pp.63 - 66. ⟨10.4028/www.scientific.net/MSF.897.63⟩
Article dans une revue hal-01648360v1

Study of the lateral growth by VLS mechanism using Al-based melts on patterned SiC substrate

 Jean Lorenzzi , Romain Esteve , Mihai Lazar , Dominique Tournier , Davy Carole , et al.
CSCRM, Sep 2011, Cleveland, United States
Communication dans un congrès hal-00747299v1

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate

 Nikoletta Jegenyes , Véronique Soulière , François Cauwet , Gabriel Ferro
14th International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States. pp.145-148, ⟨10.4028/www.scientific.net/MSF.717-720.145⟩
Communication dans un congrès hal-02864847v1

Electrical Characterization of PiN Diodes with p+ Layer Selectively Grown by VLS Transport

 Nicolas Thierry-Jebali , Mihai Lazar , Arthur Vo Ha , Davy Carole , Véronique Soulière , et al.
Materials Science Forum, 2013, 740-742, pp.911 - 914. ⟨10.4028/www.scientific.net/MSF.740-742.911⟩
Article dans une revue hal-01627792v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

 Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet , et al.
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777v1

Electrical Characteristics of Schottky Contacts on Ge-Doped 4H-SiC

 Marilena Vivona , Kassem Al Assaad , Veronique Souliere , Filippo Giannazzo , Fabrizio Roccaforte , et al.
ICSCRM 2013, Sep 2013, Miyazaki, Japan. pp.706-709, ⟨10.4028/www.scientific.net/MSF.778-780.706⟩
Communication dans un congrès hal-02875471v1

AlN hollow-nanofilaments by electrospinning

 Tony Gerges , Vincent Salles , Samuel Bernard , Catherine Journet , Xavier Jaurand , et al.
Nanotechnology, 2015, 26 (8), ⟨10.1088/0957-4484/26/8/085603⟩
Article dans une revue hal-01615279v1

A Raman Spectroscopy Study of Individual SiC Nanowires

 Mikhael. Bechelany , A. Brioude , D. Cornu , Gabriel Ferro , P. Miele
Advanced Functional Materials, 2007, 17 (6), pp.939 - 943. ⟨10.1002/adfm.200600816⟩
Article dans une revue istex hal-01597230v1

SIMS Investigation of Ge Incorporation in 3C-SiC Layers Grown from Ge-Si Melts

 Hervé Peyre , Nada Habka , Véronique Soulière , Maher Soueidan , Gabriel Ferro , et al.
6th European Conference on Silicon Carbide and Related Materials, Sep 2006, Newcastle upon Tyne, United Kingdom. pp.477-480, ⟨10.4028/www.scientific.net/MSF.556-557.477⟩
Communication dans un congrès hal-02042524v1
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Doping-induced metal-insulator transition in aluminum-doped 4H silicon carbide

 Philipp Achatz , Julien Pernot , C. Marcenat , Jozef Kacmarcik , Gabriel Ferro , et al.
Applied Physics Letters, 2008, 92, pp.072103. ⟨10.1063/1.2885081⟩
Article dans une revue hal-00761033v1
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A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

 Gabriel Ferro , Didier Chaussende
Scientific Reports, 2017, 7, pp.43069. ⟨10.1038/srep43069⟩
Article dans une revue hal-01615178v1
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Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

 Kassem Alassaad , Véronique Soulière , François Cauwet , Hervé Peyre , Davy Carole , et al.
Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩
Article dans une revue hal-01023271v1
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Prospects for 3C-SiC bulk crystal growth

 Didier Chaussende , Frédéric J. Mercier , Alexandre Boulle , Florine Conchon , Maher Soueidan , et al.
Journal of Crystal Growth, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Article dans une revue hal-00174181v1

Nanoscale probing of dielectric breakdown at SiO2/3C-SiC interfaces

 Jens Eriksson , Fabrizio Roccaforte , Patrick Fiorenza , Ming-Hung Weng , Filippo Giannazzo , et al.
Journal of Applied Physics, 2011, 109 (1), pp.013707. ⟨10.1063/1.3525806⟩
Article dans une revue hal-02573232v1

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

 Jean Lorenzzi , Nicoletta Jegenyes , Mihai Lazar , Dominique Tournier , Davy Carole , et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès hal-00747669v1

Low temperature photoluminescence investigations of 3C-SiC quasi-substrates grown on hexagonal 6H-SiC seeds

 Georgios Zoulis , Jean Lorenzi , R. Vasiliauskas , N. Jegenyes , M. Beshkova , et al.
International workshop on 3C-SiC hetero-epitaxy (HeteroSiC '09), 2009, Catane, Italy
Communication dans un congrès hal-00390772v1

Nanodiamond Integration with Photonic Devices

 Marina Radulaski , Jingyuan Linda Zhang , Yan‐kai Tzeng , Konstantinos Lagoudakis , Hitoshi Ishiwata , et al.
Laser and Photonics Reviews, 2019, 13 (8), pp.1800316. ⟨10.1002/lpor.201800316⟩
Article dans une revue hal-02322336v1
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Thermochromic properties of pure NiTiO3 and its Cu- or Co-doped derivatives

 Loren Acher , Hyewon Ji , Nicolas Garino , Florian Massuyeau , Laurie Pontille , et al.
Ceramics International, 2023, 49 (8), pp.12267-12273. ⟨10.1016/j.ceramint.2022.12.079⟩
Article dans une revue hal-03921687v1
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4H-SiC P-N junctions realized by VLS for JFET lateral structures

 Selsabil Sejil , Farah Laariedh , Mihai Lazar , Davy Carole , Christian Brylinski , et al.
ECSCRM'14, Sep 2014, Grenoble, France. pp.TU-P-61
Communication dans un congrès hal-02133686v1
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