Nombre de documents

23

Fuccio CRISTIANO


Article dans une revue13 documents

  • Sabrina Habtoun, Saïd Houmadi, Benjamin Reig, Emilie Pouget, Dmytro Dedovets, et al.. Structural and mechanical characterization of hybrid metallic-inorganic nanosprings. Materials Research Express, IOP Publishing Ltd, 2017, 4 (10), 〈10.1088/2053-1591/aa8e1a〉. 〈hal-01651965〉
  • A. Pakfar, C. Tavernier, F. Wacquant, C. Zechner, M. Juhel, et al.. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. 〈10.1016/j.sse.2016.08.002〉. 〈hal-01435138〉
  • Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, American Institute of Physics, 2015, 106 (6), pp.062104. 〈10.1063/1.4908123〉. 〈hal-01659149〉
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. 〈10.1021/nl4042438〉. 〈hal-01659180〉
  • X.L. Han, G. Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606, pp.836-839. 〈10.1016/j.susc.2012.01.021〉. 〈hal-00787379〉
  • Pier Francesco Fazzini, Fuccio Cristiano, E. Talbot, Gérard Benassayag, S. Paul, et al.. Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2338 - 2341. 〈10.1016/j.tsf.2009.09.172〉. 〈hal-01633467〉
  • V. Vervisch, Yannick Larmande, Philippe Delaporte, Thierry Sarnet, Marc Sentis, et al.. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation. Applied Surface Science, Elsevier, 2009, 255 (10), pp.5647-5650. 〈hal-00542699〉
  • C. Dupré, T. Ernst, J.-M. Hartmann, F. Andrieu, J.-P. Barnes, et al.. Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films. Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8. 〈hal-00393080〉
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. Diffusion and activation of dopants in silicon and advanced silicon-based materials. Physica Scripta, IOP Publishing, 2006, T126, pp.89-96. 〈hal-00138673〉
  • E. Lampin, C.J. Ortiz, N.E.B. Cowerne, B. Colombeau, Fuccio Cristiano. Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si. Solid-State Electronics, Elsevier, 2005, 49, pp.1168-1171. 〈hal-00138394〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, et al.. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.90-94. 〈hal-00140976〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.95-99. 〈hal-00140975〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, A. Claverie, B. Colombeau, et al.. Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects. Journal of Applied Physics, American Institute of Physics, 2003, 94, pp.7520-7525. 〈hal-00146393〉

Communication dans un congrès9 documents

  • Richard Monflier, Toshiyuki Tabata, Megane Turpin, Amin Benyoucef, Fuccio Cristiano, et al.. Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy. MRS Fall Meeting , Nov 2017, Boston, United States. 2017. 〈hal-01555348〉
  • Richard Monflier, Toshiyuki Tabata, Fuccio Cristiano, Inès Toque-Tresonne, Fulvio Mazzamuto, et al.. Defect investigation of excimer laser annealed silicon. IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France. 〈hal-01343978v3〉
  • Ana Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Fuccio Cristiano, et al.. Compositional characterization of SiC-SiO2 interfaces in MOSFETs. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p., 2012. 〈hal-00720226〉
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. On the modelling of transient diffusion and activation of boron during post-implantation annealing. International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States. 2004. 〈hal-00141013〉
  • Bernard Colombeau, A. Smith, N.E.B. Cowern, B. Pawlak, Fuccio Cristiano, et al.. Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions. 2004, Materials Research Society, Warrendale, PA, USA, pp.91-102, 2004. 〈hal-00140989〉
  • A. Claverie, Fuccio Cristiano, B. Colombeau, X. Hebras, P. Calvo, et al.. Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon. 2003, The Electrochemical Society Inc, Pennington, NJ, USA, pp.73, 2003. 〈hal-00146421〉
  • N.E.B. Cowern, B. Colombeau, R. Duffy, V. Venezia, C. Dachs, et al.. Physics-based process simulation of ultrashallow junctions. Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States. 2003. 〈hal-00146422〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. European Materials Research Society Spring Meeting, 2003, Strasbourg, France. 2003. 〈hal-00146423〉
  • N.E.B. Cowern, B. Colombeau, E. Lampin, Fuccio Cristiano, A. Claverie, et al.. Physics-based diffusion simulations for preamorphized ultrashallow junctions. 2003, Materials Research Society, Warrendale, PA, USA, pp.D6.8, 2003. 〈hal-00146407〉

HDR1 document

  • Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties. Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013. 〈tel-00919958〉