Number of documents

96

Fuccio CRISTIANO


Journal articles68 documents

  • Luis Marques, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, et al.. On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2019, 458, pp.179-183. ⟨10.1016/j.nimb.2018.09.030⟩. ⟨hal-02360279⟩
  • Georgios Gakis, Hugues Vergnes, Fuccio Cristiano, Yann Tison, Constantin Vahlas, et al.. Ιn situ N 2 -NH 3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD. Journal of Applied Physics, American Institute of Physics, 2019, 126 (12), pp.125305. ⟨10.1063/1.5113755⟩. ⟨hal-02396236⟩
  • S Lombardo, S. Boninelli, Fuccio Cristiano, I. Deretzis, M.G. Grimaldi, et al.. Phase field model of the nanoscale evolution during the explosive crystallization phenomenon. Journal of Applied Physics, American Institute of Physics, 2018, 123 (10), ⟨10.1063/1.5008362⟩. ⟨hal-01921142⟩
  • Luis Marques, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, et al.. On the anomalous generation of {0 0 1} loops during laser annealing of ion-implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2018, ⟨10.1016/j.nimb.2018.09.030⟩. ⟨hal-01921136⟩
  • Ahmet Lale, Emmanuel Scheid, Fuccio Cristiano, Lucien Datas, Benjamin Reig, et al.. Study of aluminium oxide thin films deposited by plasma-enhanced atomic layer deposition from tri-methyl-aluminium and dioxygen precursors: investigation of interfacial and structural properties. Thin Solid Films, Elsevier, 2018, 666, pp.20 - 27. ⟨10.1016/j.tsf.2018.09.028⟩. ⟨hal-02043421⟩
  • Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, et al.. A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers. Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩. ⟨hal-01921179⟩
  • Simona Boninelli, R. Milazzo, Robert Carles, Florent Houdellier, Ray Duffy, et al.. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium. APL Materials, AIP Publishing 2018, 6 (5), pp.058504. ⟨10.1063/1.5022876⟩. ⟨hal-01796115⟩
  • Daya Dhungana, Anne Hémeryck, Nicolo Sartori, Pier-Francesco Fazzini, Fuccio Cristiano, et al.. Insight of surface treatments for CMOS compatibility of InAs nanowires. Nano Research, Springer, 2018, ⟨10.1007/s12274-018-2257-8⟩. ⟨hal-02017661⟩
  • Sabrina Habtoun, Saïd Houmadi, Benjamin Reig, Emilie Pouget, Dmytro Dedovets, et al.. Structural and mechanical characterization of hybrid metallic-inorganic nanosprings. Materials Research Express, IOP Publishing Ltd, 2017, 4 (10), ⟨10.1088/2053-1591/aa8e1a⟩. ⟨hal-01651965⟩
  • S Lombardo, S. Boninelli, Fuccio Cristiano, G. Fisicaro, G. Fortunato, et al.. Laser annealing in Si and Ge: Anomalous physical aspects and modeling approaches. Materials Science in Semiconductor Processing, Elsevier, 2017, 62, pp.80 - 91. ⟨10.1016/j.mssp.2016.10.047⟩. ⟨hal-01921231⟩
  • Luis Marques, María Aboy, Iván Santos, Pedro López, Fuccio Cristiano, et al.. Ultrafast Generation of Unconventional { 001 } Loops in Si. Physical Review Letters, American Physical Society, 2017, 119 (20), pp.205503. ⟨10.1103/physrevlett.119.205503⟩. ⟨hal-01921215⟩
  • Fuccio Cristiano, M. Shayesteh, R. Duffy, K. Huet, F. Mazzamuto, et al.. Defect evolution and dopant activation in laser annealed Si and Ge. Materials Science in Semiconductor Processing, Elsevier, 2016, 42, pp.188 - 195. ⟨10.1016/j.mssp.2015.09.011⟩. ⟨hal-01921268⟩
  • Zahi Essa, B. Pelletier, P. Morin, P. Boulenc, A. Pakfar, et al.. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. ⟨10.1016/j.sse.2016.08.002⟩. ⟨hal-01435138⟩
  • Anna Maria Beltrán, Sébastien Duguay, Christian Strenger, Anton J Bauer, Fuccio Cristiano, et al.. Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, 2015, 221, pp.28-32. ⟨10.1016/j.ssc.2015.08.017⟩. ⟨hal-01720451⟩
  • Viktoryia Uhnevionak, Alex Burenkov, Christian Strenger, Guillermo Ortiz, Vincent Mortet, et al.. Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation. Materials Science Forum, Trans Tech Publications Inc., 2015, 821-823, pp.737 - 740. ⟨10.4028/www.scientific.net/msf.821-823.737⟩. ⟨hal-01921384⟩
  • Cloud Nyamhere, A Scheinemann, A Schenk, A Scheit, François Olivie, et al.. A comprehensive study of the impact of dislocation loops on leakage currents in Si shallow junction devices. Journal of Applied Physics, American Institute of Physics, 2015, 118, pp.184501. ⟨10.1063/1.4935293⟩. ⟨hal-01921377⟩
  • Viktoryia Uhnevionak, Alexander Burenkov, Christian Strenger, Guillermo Ortiz, Eléna Bedel-Pereira, et al.. Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (8), pp.2562-2570. ⟨10.1109/ted.2015.2447216⟩. ⟨cea-01745394⟩
  • Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, American Institute of Physics, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩. ⟨hal-01659149⟩
  • François-Xavier Darras, Nikolay Cherkashin, Fuccio Cristiano, Emmanuel Scheid, Oleg Kononchuk, et al.. Quantification of the number of Si interstitials formed by hydrogen implantation in silicon using boron marker layers. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2014, 327 (1), pp.29-32. ⟨10.1016/j.nimb.2013.09.045⟩. ⟨hal-01719500⟩
  • Larbi Laânab, Amine Belafhaili, Fuccio Cristiano, Nikolay Cherkashin, Alain Claverie. The effect of Ge content on the formation and evolution of 113 defects in SiGe alloys. physica status solidi (c), Wiley, 2014, 11 (1), pp.20-23. ⟨10.1002/pssc.201300177⟩. ⟨hal-01719497⟩
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. ⟨10.1021/nl4042438⟩. ⟨hal-01659180⟩
  • Giuseppe Fisicaro, Lourdes Pelaz, Maria Aboy, Pedro Lopez, Markus Italia, et al.. Kinetic Monte Carlo simulations of boron activation in implanted Si under laser thermal annealing. Applied Physics Express, IOPScience - Japan Society of Applied Physics, 2014, 7 (2), pp.021301. ⟨10.7567/apex.7.021301⟩. ⟨hal-01921825⟩
  • Guillermo Ortiz, Vincent Mortet, Chrisitan Strenger, Viktoryia Uhnevionak, Alexander Burenkov, et al.. Impact of Fabrication Process on Electrical Properties and on Interfacial Density of States in 4H-SiC n-MOSFETs Studied by Hall Effect. Materials Science Forum, Trans Tech Publications Inc., 2014, 806, pp.127 - 132. ⟨10.4028/www.scientific.net/msf.806.127⟩. ⟨hal-01921388⟩
  • Viktoryia Uhnevionak, Alex Burenkov, Christian Strenger, Vincent Mortet, Eléna Bedel-Pereira, et al.. Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.483 - 486. ⟨10.4028/www.scientific.net/msf.778-780.483⟩. ⟨hal-01921813⟩
  • Christian Strenger, Viktoryia Uhnevionak, Vincent Mortet, Guillermo Ortiz, Tobias Erlbacher, et al.. Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2014, 778-780, pp.583 - 586. ⟨10.4028/www.scientific.net/msf.778-780.583⟩. ⟨hal-01921817⟩
  • Maryam Shayesteh, Dan Connell, Farzan Gity, Philip Murphy-Armando, Ran Yu, et al.. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (12), pp.4047 - 4055. ⟨10.1109/ted.2014.2364957⟩. ⟨hal-01921394⟩
  • Cloud Nyamhere, Fuccio Cristiano, François Olivie, Z. Essa, Eléna Bedel-Pereira, et al.. Electrical characterisation and predictive simulation of defects induced by keV Si+ implantation in n-type Si. Journal of Applied Physics, American Institute of Physics, 2013, 113 (18), pp.184508. ⟨hal-01921870⟩
  • O. Cojocaru-Mirédin, Fuccio Cristiano, P.-F. Fazzini, Dominique Mangelinck, D. Blavette. Extended defects and precipitation in heavily B-doped silicon. Thin Solid Films, Elsevier, 2013, 534, pp.62 - 66. ⟨10.1016/j.tsf.2013.01.090⟩. ⟨hal-01921833⟩
  • Viktoryia Uhnevionak, Christian Strenger, Alex Burenkov, Vincent Mortet, Eléna Bedel-Pereira, et al.. Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.533 - 536. ⟨10.4028/www.scientific.net/msf.740-742.533⟩. ⟨hal-01921843⟩
  • Christian Strenger, Viktoryia Uhnevionak, Alex Burenkov, Anton Bauer, Vincent Mortet, et al.. Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.537 - 540. ⟨10.4028/www.scientific.net/msf.740-742.537⟩. ⟨hal-01921853⟩
  • V. Mortet, E. Bedel-Pereira, J Bobo, Fuccio Cristiano, Christian Strenger, et al.. Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation. Materials Science Forum, Trans Tech Publications Inc., 2013, 740-742, pp.525 - 528. ⟨10.4028/www.scientific.net/msf.740-742.525⟩. ⟨hal-01921860⟩
  • A. Belafhaili, L. Laânab, Fuccio Cristiano, Nikolay Cherkashin, Alain Claverie. Influence of the Germanium content on the amorphization of silicon-germanium alloys during ion implantation. Materials Science in Semiconductor Processing, Elsevier, 2013, 16 (6), pp.1655-1658. ⟨10.1016/j.mssp.2013.04.014⟩. ⟨hal-01736024⟩
  • W. Lerch, W. Kegel, J. Niess, A. Gschwandtner, J. Gelpey, et al.. Scaling Requires Continuous Innovation in Thermal Processing: Low-Temperature Plasma Oxidation. ECS Transactions, Electrochemical Society, Inc., 2012, 45 (6), pp.151 - 161. ⟨10.1149/1.3700948⟩. ⟨hal-01922632⟩
  • B Pawlak, T. Janssens, S. Singh, I. Kuzma-Filipek, J. Robbelein, et al.. Studies of implanted boron emitters for solar cell applications. Progress in Photovoltaics: Research and Applications, 2012, 20 (1), pp.106 - 110. ⟨10.1002/pip.1106⟩. ⟨hal-01922649⟩
  • Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Matthieu Lefebvre, Eléna Bedel-Pereira, et al.. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp.134-138. ⟨10.4028/www.scientific.net/MSF.711.134⟩. ⟨hal-01745014⟩
  • C. Strenger, V. Haeublein, T. Enbacher, A. J. Bauer, H. Ryssel, et al.. Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 717-720, pp.437-440. ⟨10.4028/www.scientific.net/MSF.717-720.437⟩. ⟨hal-01745018⟩
  • X.-L. Han, Guilhem Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606 (9-10), pp.836 - 839. ⟨10.1016/j.susc.2012.01.021⟩. ⟨hal-01921880⟩
  • X.L. Han, G. Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606, pp.836-839. ⟨10.1016/j.susc.2012.01.021⟩. ⟨hal-00787379⟩
  • S. Boninelli, G. Impellizzeri, A. Alberti, F. Priolo, Fuccio Cristiano, et al.. Role of the Ge surface during the end of range dissolution. Applied Physics Letters, American Institute of Physics, 2012, 101 (16), pp.162103. ⟨10.1063/1.4759031⟩. ⟨hal-01921897⟩
  • Z. Essa, C. Gaumer, A. Pakfar, M. Gros-Jean, M. Juhel, et al.. Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks. Applied Physics Letters, American Institute of Physics, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩. ⟨hal-01921905⟩
  • E. Bazizi, P Fazzini, A. Pakfar, C. Tavernier, B. Vandelle, et al.. Modeling of the effect of the buried Si–SiO2 interface on transient enhanced boron diffusion in silicon on insulator. Journal of Applied Physics, American Institute of Physics, 2010, 107 (7), pp.074503. ⟨10.1063/1.3369160⟩. ⟨hal-01922894⟩
  • Nick Cowern, Nick Bennett, Chihak Ahn, Joo Yoon, Silke Hamm, et al.. Overlayer stress effects on defect formation in Si and Ge. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2442 - 2447. ⟨10.1016/j.tsf.2009.09.142⟩. ⟨hal-01922665⟩
  • S. Duguay, M. Ngamo, P. Fazzini, Fuccio Cristiano, K. Daoud, et al.. Atomic scale study of a MOS structure with an ultra-low energy boron-implanted silicon substrate. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2398 - 2401. ⟨10.1016/j.tsf.2009.09.159⟩. ⟨hal-01922657⟩
  • Pier Francesco Fazzini, Fuccio Cristiano, E. Talbot, Gérard Benassayag, S. Paul, et al.. Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2338 - 2341. ⟨10.1016/j.tsf.2009.09.172⟩. ⟨hal-01633467⟩
  • E. Bazizi, A. Pakfar, P Fazzini, Fuccio Cristiano, C. Tavernier, et al.. Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2427 - 2430. ⟨10.1016/j.tsf.2009.09.141⟩. ⟨hal-01922678⟩
  • Fabrice Severac, Fuccio Cristiano, Eléna Bedel-Pereira, Pier Fazzini, Jonathan Boucher, et al.. Influence of boron-interstitials clusters on hole mobility degradation in high dose boron-implanted ultrashallow junctions. Journal of Applied Physics, American Institute of Physics, 2010, 107 (12), pp.123711. ⟨10.1063/1.3446844⟩. ⟨hal-01922687⟩
  • S. Duguay, T. Philippe, Fuccio Cristiano, D. Blavette. Direct imaging of boron segregation to extended defects in silicon. Applied Physics Letters, American Institute of Physics, 2010, 97 (24), pp.242104. ⟨10.1063/1.3526376⟩. ⟨hal-01922903⟩
  • F. Panciera, P Fazzini, M. Collet, J. Boucher, Eléna Bedel-Pereira, et al.. End-of-range defects in germanium and their role in boron deactivation. Applied Physics Letters, American Institute of Physics, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩. ⟨hal-01922899⟩
  • V. Vervisch, Yannick Larmande, Philippe Delaporte, Thierry Sarnet, Marc Sentis, et al.. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation. Applied Surface Science, Elsevier, 2009, 255 (10), pp.5647-5650. ⟨hal-00542699⟩
  • S. Boninelli, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, et al.. Formation and evolution of F nanobubbles in amorphous and crystalline Si. Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. ⟨10.1063/1.2969055⟩. ⟨hal-01736061⟩
  • C. Dupré, T. Ernst, J.-M. Hartmann, F. Andrieu, J.-P. Barnes, et al.. Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films. Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8. ⟨hal-00393080⟩
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.80-84. ⟨10.1016/j.nimb.2006.10.019⟩. ⟨hal-01736073⟩
  • Fuccio Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, et al.. Defects evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. ⟨10.1016/j.nimb.2006.10.046⟩. ⟨hal-01736079⟩
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops . Applied Physics Letters, American Institute of Physics, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩. ⟨hal-01736076⟩
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. Diffusion and activation of dopants in silicon and advanced silicon-based materials. Physica Scripta, IOP Publishing, 2006, T126, pp.89-96. ⟨hal-00138673⟩
  • Nikolay Cherkashin, Martin Hÿtch, Fuccio Cristiano, A. Claverie. Structure determination of clusters formed in ultra-low energy high-dose implanted silicon. Solid State Phenomena, 2005, 108-109, pp.303-308. ⟨10.4028/www.scientific.net/SSP.108-109.303⟩. ⟨hal-01736085⟩
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions. Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. ⟨10.1149/1.2018176⟩. ⟨hal-01736089⟩
  • E. Lampin, C.J. Ortiz, N.E.B. Cowerne, B. Colombeau, Fuccio Cristiano. Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si. Solid-State Electronics, Elsevier, 2005, 49, pp.1168-1171. ⟨hal-00138394⟩
  • Fuccio Cristiano, Nikolay Cherkashin, Xavier Hebras, P. Calvo, Y. Lamrani, et al.. Ion beam induced defects in crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. ⟨10.1016/j.nimb.2003.11.019⟩. ⟨hal-01736101⟩
  • P. Calvo, Alain Claverie, Nikolay Cherkashin, B. Colombeau, Y. Lamrani, et al.. Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.173-177. ⟨10.1016/j.nimb.2003.11.075⟩. ⟨hal-01736098⟩
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, et al.. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.90-94. ⟨hal-00140976⟩
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.95-99. ⟨hal-00140975⟩
  • Fuccio Cristiano, Nikolay Cherkashin, P. Calvo, Y. Lamrani, Xavier Hebras, et al.. Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. ⟨10.1016/j.mseb.2004.07.049⟩. ⟨hal-01736096⟩
  • Silke Paul, Wilfried Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle. MRS Proceedings, 2004, 810, ⟨10.1557/proc-810-c5.4⟩. ⟨hal-01736104⟩
  • Nikolay Cherkashin, P. Calvo, Fuccio Cristiano, B. de Mauduit, Alain Claverie. On the “Life” of {113} Defects. MRS Proceedings, 2004, 810, pp.103-108. ⟨10.1557/PROC-810-C3.7⟩. ⟨hal-01736093⟩
  • Fuccio Cristiano, Xavier Hebras, Nikolay Cherkashin, Alain Claverie, W. Lerch, et al.. Clusters formation in ultralow-energy high-dose boron-implanted silicon. Applied Physics Letters, American Institute of Physics, 2003, 83 (26), pp.5407-5409. ⟨10.1063/1.1637440⟩. ⟨hal-01736115⟩
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Nikolay Cherkashin, et al.. Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon . Applied Physics Letters, American Institute of Physics, 2003, 83 (10), pp.1953-1955. ⟨10.1063/1.1608489⟩. ⟨hal-01736110⟩
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, A. Claverie, B. Colombeau, et al.. Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects. Journal of Applied Physics, American Institute of Physics, 2003, 94, pp.7520-7525. ⟨hal-00146393⟩

Conference papers22 documents

  • A-S. Royet, S. Kerdiles, P. Acosta Alba, C. Bonafos, V. Paillard, et al.. Numerical simulations of nanosecond laser annealing of Si nanoparticles for plasmonic structures. 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2019, Udine, Italy. pp.1-4, ⟨10.1109/SISPAD.2019.8870529⟩. ⟨hal-02392503⟩
  • Richard Monflier, Hiba Rizk, Toshiyuki Tabata, Julien Roul, Simona Boninelli, et al.. Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization. 22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩. ⟨hal-01803955v2⟩
  • Richard Monflier, Toshiyuki Tabata, Mégane Turpin, Amin Benyoucef, Fuccio Cristiano, et al.. Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy. MRS Fall Meeting , MRS, Nov 2017, Boston, United States. ⟨hal-01555348⟩
  • Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain. ⟨hal-01735436⟩
  • Richard Monflier, Amin Benyoucef, Mégane Turpin, Fuccio Cristiano, Eléna Bedel-Pereira. Etude des défauts induits par recuit laser excimer sur silicium. 20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p. ⟨hal-01690886⟩
  • L. Pasini, P. Batude, J. Lacord, M. Cassé, B. Mathieu, et al.. High performance CMOS FDSOI devices activated at low temperature. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. ⟨10.1109/VLSIT.2016.7573407⟩. ⟨hal-01730659⟩
  • R Daubriac, M Daher, E. Scheid, S. Joblot, D Barge, et al.. Differential Hall characterisation of shallow strained SiGe layers. 2016 21st International Conference on Ion Implantation Technology (IIT), Sep 2016, Tainan, Taiwan. ⟨hal-01730666⟩
  • Richard Monflier, Toshiyuki Tabata, Fuccio Cristiano, Inès Toque-Tresonne, Fulvio Mazzamuto, et al.. Defect investigation of excimer laser annealed silicon. IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France. ⟨hal-01343978v3⟩
  • Hélène Carrère, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Alexandre Arnoult, et al.. Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys. 6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States. ⟨hal-01947411⟩
  • Fuccio Cristiano, Y. Qiu, Eléna Bedel-Pereira, Karim Huet, Fulvio Mazzamuto, et al.. Extended defects in ion-implanted si during nanosecond laser annealing. Junction Technology (IWJT), 2014 International Workshop on, May 2014, Shanghai, China. pp.7-12, ⟨10.1109/IWJT.2014.6842019⟩. ⟨hal-01721156⟩
  • Alexandre Arnoult, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, et al.. On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing. 5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947318⟩
  • Ana Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Fuccio Cristiano, et al.. Compositional characterization of SiC-SiO2 interfaces in MOSFETs. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p. ⟨hal-00720226⟩
  • Fuccio Cristiano, Zahi Essa, Yang Qiul, Y. Spiegel, F. Torregrosa, et al.. Implantation-induced structural defects in highly activated USJs: Boron precipitation and trapping in pre-Amorphised silicon. 12th International Workshop on Junction Technology (IWJT 2012), May 2012, Shanghai, China. pp.1--7, ⟨10.1109/IWJT.2012.6212827⟩. ⟨hal-01928869⟩
  • S. Paul, W. Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.215-221, ⟨10.1557/PROC-810-C5.4⟩. ⟨hal-01736106⟩
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions. Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. pp.90-105. ⟨hal-01736100⟩
  • R. El Farhane, C. Laviron, Fuccio Cristiano, Nikolay Cherkashin, P. Morin, et al.. Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. pp.21-27, ⟨10.1557/PROC-810-C1.4⟩. ⟨hal-01736099⟩
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. On the modelling of transient diffusion and activation of boron during post-implantation annealing. International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States. ⟨hal-00141013⟩
  • Bernard Colombeau, A. Smith, N.E.B. Cowern, B. Pawlak, Fuccio Cristiano, et al.. Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions. 2004, pp.91-102. ⟨hal-00140989⟩
  • A. Claverie, Fuccio Cristiano, B. Colombeau, Xavier Hebras, P. Calvo, et al.. Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon. 2003, pp.73. ⟨hal-00146421⟩
  • N.E.B. Cowern, B. Colombeau, R. Duffy, V. Venezia, C. Dachs, et al.. Physics-based process simulation of ultrashallow junctions. Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States. ⟨hal-00146422⟩
  • N.E.B. Cowern, B. Colombeau, E. Lampin, Fuccio Cristiano, A. Claverie, et al.. Physics-based diffusion simulations for preamorphized ultrashallow junctions. 2003, pp.D6.8. ⟨hal-00146407⟩
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. European Materials Research Society Spring Meeting, 2003, Strasbourg, France. ⟨hal-00146423⟩

Poster communications4 documents

  • Chantal Fontaine, Alexandre Arnoult, Fuccio Cristiano, Hélène Carrère, Sawsen Azaizia, et al.. Growth and properties of GaAsBi thin layers by molecular beam epitaxy. International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016. ⟨hal-01947425⟩
  • Chantal Fontaine, Alexandre Arnoult, Patchareewan Prongjit, Simone Mazzucato, Hélène Carrère, et al.. Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015. ⟨hal-01947381⟩
  • Alexandre Arnoult, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, et al.. Spin properties of dilute bismides. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015. ⟨hal-01947398⟩
  • Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Hélène Carrère, T.T. Zhang, et al.. Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster). 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014. ⟨hal-01947354⟩

Preprints, Working Papers, ...1 document

  • Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers. 2018. ⟨hal-01730674⟩

Habilitation à diriger des recherches1 document

  • Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties. Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013. ⟨tel-00919958⟩