Nombre de documents

45

Fuccio CRISTIANO


Article dans une revue27 documents

  • Simona Boninelli, R. Milazzo, Robert Carles, Florent Houdellier, Ray Duffy, et al.. Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium. APL Materials, AIP Publishing 2018, 6 (5), pp.058504. 〈10.1063/1.5022876〉. 〈hal-01796115〉
  • Sabrina Habtoun, Saïd Houmadi, Benjamin Reig, Emilie Pouget, Dmytro Dedovets, et al.. Structural and mechanical characterization of hybrid metallic-inorganic nanosprings. Materials Research Express, IOP Publishing Ltd, 2017, 4 (10), 〈10.1088/2053-1591/aa8e1a〉. 〈hal-01651965〉
  • A. Pakfar, C. Tavernier, F. Wacquant, C. Zechner, M. Juhel, et al.. Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors. Solid-State Electronics, Elsevier, 2016, 126, pp.163-169. 〈10.1016/j.sse.2016.08.002〉. 〈hal-01435138〉
  • Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, American Institute of Physics, 2015, 106 (6), pp.062104. 〈10.1063/1.4908123〉. 〈hal-01659149〉
  • Viktoryia Uhnevionak, Alexander Burenkov, Christian Strenger, Guillermo Ortiz, Eléna Bedel-Pereira, et al.. Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2015, 62 (8), pp.2562-2570. 〈10.1109/ted.2015.2447216〉. 〈cea-01745394〉
  • Yang Qiu, Fuccio Cristiano, Karim Huet, Fulvio Mazzamuto, Giuseppe Fisicaro, et al.. Extended Defects Formation in Nanosecond Laser-Annealed Ion Implanted Silicon. Nano Letters, American Chemical Society, 2014, 14 (4), pp.1769-1775. 〈10.1021/nl4042438〉. 〈hal-01659180〉
  • Anna Maria Beltrán, Sylvie Schamm-Chardon, Vincent Mortet, Matthieu Lefebvre, Eléna Bedel-Pereira, et al.. Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs. Materials Science Forum, Trans Tech Publications Inc., 2012, 711, pp.134-138. 〈10.4028/www.scientific.net/MSF.711.134〉. 〈hal-01745014〉
  • X.L. Han, G. Larrieu, E. Dubois, Fuccio Cristiano. Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts. Surface Science, Elsevier, 2012, 606, pp.836-839. 〈10.1016/j.susc.2012.01.021〉. 〈hal-00787379〉
  • Pier Francesco Fazzini, Fuccio Cristiano, E. Talbot, Gérard Benassayag, S. Paul, et al.. Effect of Germanium content and strain on the formation of extended defects in ion implanted Silicon/Germanium. Thin Solid Films, Elsevier, 2010, 518 (9), pp.2338 - 2341. 〈10.1016/j.tsf.2009.09.172〉. 〈hal-01633467〉
  • V. Vervisch, Yannick Larmande, Philippe Delaporte, Thierry Sarnet, Marc Sentis, et al.. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation. Applied Surface Science, Elsevier, 2009, 255 (10), pp.5647-5650. 〈hal-00542699〉
  • S. Boninelli, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, et al.. Formation and evolution of F nanobubbles in amorphous and crystalline Si. Applied Physics Letters, American Institute of Physics, 2008, 93 (6), pp.61906 - 171916. 〈10.1063/1.2969055〉. 〈hal-01736061〉
  • C. Dupré, T. Ernst, J.-M. Hartmann, F. Andrieu, J.-P. Barnes, et al.. Carrier mobility degradation due to high dose implantation in ultrathin unstrained and strained silicon-on-insulator films. Journ. Appl. Phys, 2007, 102 (10), pp.104505:1-8. 〈hal-00393080〉
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. Diffusion and activation of dopants in silicon and advanced silicon-based materials. Physica Scripta, IOP Publishing, 2006, T126, pp.89-96. 〈hal-00138673〉
  • Fuccio Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, et al.. Defects evolution and dopant activation anomalies in ion implanted silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.68-79. 〈10.1016/j.nimb.2006.10.046〉. 〈hal-01736079〉
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Transformation of {1 1 3} defects into dislocation loops mediated by the {1 1 1} rod-like defects. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2006, 253 (1-2), pp.80-84. 〈10.1016/j.nimb.2006.10.019〉. 〈hal-01736073〉
  • S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops . Applied Physics Letters, American Institute of Physics, 2006, 89 (16), pp.161904. 〈10.1063/1.2361178〉. 〈hal-01736076〉
  • Nikolay Cherkashin, Martin Hÿtch, Fuccio Cristiano, A. Claverie. Structure determination of clusters formed in ultra-low energy high-dose implanted silicon. Solid State Phenomena, 2005, 108-109, pp.303-308. 〈10.4028/www.scientific.net/SSP.108-109.303〉. 〈hal-01736085〉
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Deactivation of Solid Phase Epitaxy-Activated Boron Ultrashallow Junctions. Journal of The Electrochemical Society, Electrochemical Society, 2005, 152 (10), pp.G787. 〈10.1149/1.2018176〉. 〈hal-01736089〉
  • E. Lampin, C.J. Ortiz, N.E.B. Cowerne, B. Colombeau, Fuccio Cristiano. Combined master and Fokker–Planck equations for the modeling of the kinetics of extended defects in Si. Solid-State Electronics, Elsevier, 2005, 49, pp.1168-1171. 〈hal-00138394〉
  • Silke Paul, Wilfried Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, Diffusion and Defect Analysis of a Spike Anneal Thermal Cycle. MRS Proceedings, 2004, 810, 〈10.1557/proc-810-c5.4〉. 〈hal-01736104〉
  • Fuccio Cristiano, Nikolay Cherkashin, P. Calvo, Y. Lamrani, Xavier Hebras, et al.. Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Elsevier, 2004, 114-115 (SPEC. ISS.), pp.174-179. 〈10.1016/j.mseb.2004.07.049〉. 〈hal-01736096〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, B. Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.95-99. 〈hal-00140975〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Y. Lamrani, et al.. Depth dependence of defect evolution and TED during annealing. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216, pp.90-94. 〈hal-00140976〉
  • P. Calvo, Alain Claverie, Nikolay Cherkashin, B. Colombeau, Y. Lamrani, et al.. Thermal evolution of {1 1 3} defects in silicon: transformation against dissolution. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.173-177. 〈10.1016/j.nimb.2003.11.075〉. 〈hal-01736098〉
  • Fuccio Cristiano, Nikolay Cherkashin, Xavier Hebras, P. Calvo, Y. Lamrani, et al.. Ion beam induced defects in crystalline silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2004, 216 (1-4), pp.46-56. 〈10.1016/j.nimb.2003.11.019〉. 〈hal-01736101〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, A. Claverie, B. Colombeau, et al.. Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects. Journal of Applied Physics, American Institute of Physics, 2003, 94, pp.7520-7525. 〈hal-00146393〉
  • B. Colombeau, N.E.B. Cowern, Fuccio Cristiano, P. Calvo, Nikolay Cherkashin, et al.. Time evolution of the depth profile of {113} defects during transient enhanced diffusion in silicon . Applied Physics Letters, American Institute of Physics, 2003, 83 (10), pp.1953-1955. 〈10.1063/1.1608489〉. 〈hal-01736110〉

Communication dans un congrès16 documents

  • Richard Monflier, H Rizk, Toshiyuki Tabata, Julien Roul, Éric Imbernon, et al.. Nanosecond laser defects induced in crystalline silicon annealed: identification, localization and electrical impact. 22nd International Conference on Ion Implantation Technology , Sep 2018, Würzburg, Germany. pp.1, 2018, 〈https://www.iit2018.org/〉. 〈hal-01803955〉
  • Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain. 2017. 〈hal-01735436〉
  • Richard Monflier, Toshiyuki Tabata, Mégane Turpin, Amin Benyoucef, Fuccio Cristiano, et al.. Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy. MRS Fall Meeting , Nov 2017, Boston, United States. 2017. 〈hal-01555348〉
  • L. Pasini, P. Batude, J. Lacord, M. Cassé, B. Mathieu, et al.. High performance CMOS FDSOI devices activated at low temperature. 2016 IEEE Symposium on VLSI Technology, Jun 2016, Honolulu, United States. IEEE, 2016, 〈10.1109/VLSIT.2016.7573407〉. 〈hal-01730659〉
  • Richard Monflier, Toshiyuki Tabata, Fuccio Cristiano, Inès Toque-Tresonne, Fulvio Mazzamuto, et al.. Defect investigation of excimer laser annealed silicon. IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France. 〈hal-01343978v3〉
  • Ana Beltran, Sylvie Schamm-Chardon, Vincent Mortet, Eléna Bedel-Pereira, Fuccio Cristiano, et al.. Compositional characterization of SiC-SiO2 interfaces in MOSFETs. 15Th European Microscopy Conference, Sep 2012, Manchester, United Kingdom. 2p., 2012. 〈hal-00720226〉
  • S. Paul, W. Lerch, Xavier Hebras, Nikolay Cherkashin, Fuccio Cristiano. Activation, diffusion and defect analysis of a spike anneal thermal cycle. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. 810, pp.215-221, 2004, 〈10.1557/PROC-810-C5.4〉. 〈hal-01736106〉
  • Nikolay Cherkashin, P. Calvo, Fuccio Cristiano, B. De Mauduit, Alain Claverie. On the “Life” of {113} Defects. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. 810, pp.103-108, 2004, 〈10.1557/PROC-810-C3.7〉. 〈hal-01736093〉
  • R. El Farhane, C. Laviron, Fuccio Cristiano, Nikolay Cherkashin, P. Morin, et al.. Solid phase epitaxy process integration on 50-nm PMOS devices: Effects of defects on chemical and electrical characteristics of ultra shallow junctions. Symposium C – Silicon Front-End Junction Formation-Physics and Technology, 2004, indéterminée, Unknown Region. 810, pp.21-27, 2004, 〈10.1557/PROC-810-C1.4〉. 〈hal-01736099〉
  • W. Lerch, S. Paul, J. Niess, Fuccio Cristiano, Y. Lamrani, et al.. Solid phase epitaxy - Activation and deactivation of boron in ultra-shallow junctions. Advanced short-time thermal processing for Si-based CMOS devices , 2004, indéterminée, Unknown Region. 1, pp.90-105, 2004, Advanced short-time thermal processing for Si-based CMOS devices II : proceedings of the international symposium. 〈hal-01736100〉
  • Bernard Colombeau, A. Smith, N.E.B. Cowern, B. Pawlak, Fuccio Cristiano, et al.. Current understanding and modelling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions. 2004, Materials Research Society, Warrendale, PA, USA, pp.91-102, 2004. 〈hal-00140989〉
  • P. Pichler, C.J. Ortiz, B. Colombeau, N.E.B. Cowern, E. Lampin, et al.. On the modelling of transient diffusion and activation of boron during post-implantation annealing. International Electron Devices Meeting, IEDM 2004, 2004, San Francisco, CA, United States. 2004. 〈hal-00141013〉
  • N.E.B. Cowern, B. Colombeau, E. Lampin, Fuccio Cristiano, A. Claverie, et al.. Physics-based diffusion simulations for preamorphized ultrashallow junctions. 2003, Materials Research Society, Warrendale, PA, USA, pp.D6.8, 2003. 〈hal-00146407〉
  • E. Lampin, Fuccio Cristiano, Y. Lamrani, Bernard Colombeau. Coupling of atom-by-atom calculations of extended defects with B kick-out equations : application to the simulation of boron TED. European Materials Research Society Spring Meeting, 2003, Strasbourg, France. 2003. 〈hal-00146423〉
  • N.E.B. Cowern, B. Colombeau, R. Duffy, V. Venezia, C. Dachs, et al.. Physics-based process simulation of ultrashallow junctions. Ultra-Shallow Junctions Worshop, 2003, Santa Cruz, CA, United States. 2003. 〈hal-00146422〉
  • A. Claverie, Fuccio Cristiano, B. Colombeau, Xavier Hebras, P. Calvo, et al.. Relation between thermal evolution of interstitial defects and transient enhanced diffusion in silicon. 2003, The Electrochemical Society Inc, Pennington, NJ, USA, pp.73, 2003. 〈hal-00146421〉

Pré-publication, Document de travail1 document

  • Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. A Differential Hall Effect method with sub-nanometre resolution for active dopant concentration profiling in ultra-thin Si 1-x Ge x and Si doped layers. Rapport LAAS n° 18068. 2018. 〈hal-01730674〉

HDR1 document

  • Fuccio Cristiano. Ion Implantation‐Induced extended defects: structural investigations and impact on Ultra‐Shallow Junction properties. Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013. 〈tel-00919958〉