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Number of documents

2

Full professor Nicolas Fressengeas


Professeur de l'Université de Lorraine

Détails, opinions et vulgarisations

Données publiées sur Zenodo

Données publiées sur DOREL


Muhd Azi Che Seliman   

Journal articles2 documents

  • Ahmad Sauffi yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, et al.. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate. Materials Science in Semiconductor Processing, Elsevier, 2022, 144, pp.106614. ⟨10.1016/j.mssp.2022.106614⟩. ⟨hal-03609434⟩
  • Sauffi Bin yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, Emerald, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩