Number of documents

2

Full professor Nicolas Fressengeas

Full Professor in Université de Lorraine

Vice President of Université de Lorraine, in charge of the digital, data and Open Science policies
- Data, algorithms and source code university administrator
  - Recherche Data Gouv Board member
- University delegate to the CCSD partners assembly
  - assembly delegate to the CCSD Board
- University Open Science delegate to France Universités
- Member of national DORA working group on research assessment
- Member the institute for scientific and technical information board
Member of the French International Open Science Expert Network
Member of the French Office for Research Integrity
Member of the EOSC Task Force Research Careers, Recognition and Credit

Data on Recherche Data Gouv

Mohd Anas Ahmad Sha Shiong Ng

Journal articles2 documents

Ahmad Sauffi Yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, et al.. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate. Materials Science in Semiconductor Processing, Elsevier, 2022, 144, pp.106614. ⟨10.1016/j.mssp.2022.106614⟩. ⟨hal-03609434⟩
Sauffi Bin Yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, Emerald, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩