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Number of documents

3

Full professor Nicolas Fressengeas


Professeur de l'Université de Lorraine

Détails, opinions et vulgarisations

Données publiées sur Zenodo

Données publiées sur DOREL


Way Foong Lim   

Journal articles2 documents

  • Ahmad Sauffi yusof, Sidi Ould Saad Hamady, Christyves Chevallier, Nicolas Fressengeas, Zainuriah Hassan, et al.. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate. Materials Science in Semiconductor Processing, Elsevier, 2022, 144, pp.106614. ⟨10.1016/j.mssp.2022.106614⟩. ⟨hal-03609434⟩
  • Sauffi Bin yusof, Zainuriah Hassan, Sidi Ould Saad Hamady, Sha Shiong Ng, Mohd Anas Ahmad, et al.. The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures. Microelectronics International, Emerald, 2021, 38 (3), pp.105-112. ⟨10.1108/MI-02-2021-0018⟩. ⟨hal-03247074⟩

Conference papers1 document

  • Sidi Ould Saad Hamady, Sauffi Bin yusof, Sourav Bose, Christyves Chevallier, Nicolas Fressengeas, et al.. Development of InGaN based solar cells: present status and challenges. 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), Dec 2020, Penang, Malaysia. ⟨hal-03248338⟩