Number of documents

2

Full professor Nicolas Fressengeas


Lorraine university full professor

Details and opinions in French :


"A. Ougazzaden"   

Journal articles1 document

  • A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, et al.. Interface states effects in GaN Schottky diodes. Thin Solid Films, Elsevier, 2012. ⟨hal-00720225⟩

Conference papers1 document

  • T. Moudakir, S. Gautier, G. Orsal, N. Maloufi, D. J. Rogers, et al.. MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications. EW-MOVPE XIII Conference, Jun 2009, Ulm, Germany. pp.249. ⟨hal-00415609⟩