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Frédéric Genty

42
Documents
Identifiants chercheurs

Présentation

Professeur à CentraleSupélec Délégué à la Recherche du campus de Metz Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels" Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes
Professeur à CentraleSupélec Délégué à la Recherche du campus de Metz Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels" Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes

Publications

laurent-cerutti
Image document

Oxide confinement and high contrast grating mirrors for Mid-infrared VCSELs

Youness Laaroussi , Christyves Chevallier , Frédéric Genty , Nicolas Fressengeas , Laurent Cerutti
Optical Materials Express, 2013, 3 (10), pp.1576-1585. ⟨10.1364/OME.3.001576⟩
Article dans une revue hal-00863150v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE

Laurent Cerutti , Arnaud Ducanchez , Grégoire Narcy , Pierre Grech , G. Boissier
Journal of Crystal Growth, 2009, 311 (7), pp.1912-1916. ⟨10.1016/j.jcrysgro.2008.11.026⟩
Article dans une revue hal-00380447v1

Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié
Electronics Letters, 2009, 45 (5), pp.265-266. ⟨10.1049/el:20090134⟩
Article dans une revue hal-00380609v1

Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 [micro sign]m

L. Cerutti , A. Ducanchez , P. Grech , A. Garnache , F. Genty
Electronics Letters, 2008, 44 (3), ⟨10.1049/el:20083424⟩
Article dans une revue hal-01616288v1

GaSb-based monolithic EP-VCSEL emitting above 2.5 [micro sign]m

A. Ducanchez , L. Cerutti , P. Grech , F. Genty
Electronics Letters, 2008, 44 (23), ⟨10.1049/el:20082845⟩
Article dans une revue hal-01617261v1

Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction

Arnaud Ducanchez , Laurent Cerutti , Alban Gassenq , Pierre Grech , Frédéric Genty
IEEE Journal of Selected Topics in Quantum Electronics, 2008, 14 (4), pp.1014 - 1021. ⟨10.1109/JSTQE.2008.922014⟩
Article dans une revue hal-01616283v1

Room-Temperature Continuous-Wave Operation of 2.3-$\mu$m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers

A. Ducanchez , L. Cerutti , P. Grech , F. Genty
IEEE Photonics Technology Letters, 2008, 20 (20), pp.1745 - 1747. ⟨10.1109/LPT.2008.2004997⟩
Article dans une revue hal-01616306v1

Room temperature continuous wave operation of electrically-injected Sb-based RC-LED emitting near

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty
Superlattices and Microstructures, 2008, 44 (1), pp.62 - 69. ⟨10.1016/j.spmi.2008.02.005⟩
Article dans une revue hal-01616275v1

AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3µm

A. Pérona , A. Garnache , L. Cerutti , A. Ducanchez , S. Mihindou
Semiconductor Science and Technology, 2007, 22 (10), pp.1140-1144. ⟨10.1088/0268-1242/22/10/010⟩
Article dans une revue hal-00327771v1

Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm

L. Cerutti , G. Boissier , P. Grech , A. Pérona , J. Angellier
Journal of Crystal Growth, 2007, 301-302, pp.967-970. ⟨10.1016/j.jcrysgro.2006.11.057⟩
Article dans une revue hal-00327288v1

Novel Hole well antimonide laser diodes on GaSb operating near 2.93 µm

L. Cerutti , G. Boissier , P. Grech , A. Pérona , J. Angellier
Electronics Letters, 2006, 42 (24), pp.1400-1401. ⟨10.1049/el:20062753⟩
Article dans une revue hal-00329057v1

2-2.7μm single frequency tunable Sb–based lasers operating in CW at RT: Microcavity and External-cavity VCSELs, DFB

A. Garnache , A. Ouvrard , L. Cerutti , D. Barat , A. Vicet
Proceedings of SPIE, the International Society for Optical Engineering, 2006, 6184, ⟨10.1117/12.663448⟩
Article dans une revue hal-00330456v1

Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

A. Ouvrard , A. Garnache , L. Cerutti , F. Genty , D. Romanini
IEEE Photonics Technology Letters, 2005, 17 (10), pp.2020-2022. ⟨10.1109/LPT.2005.856341⟩
Article dans une revue hal-00330815v1

Vertical Cavity Surface Emitting Laser Sources for Gas Detection

L. Cerutti , A. Garnache , A. Ouvrard , M. Garcia , F. Genty
physica status solidi (a), 2005, 202 (4), pp.631-635. ⟨10.1002/pssa.200460453⟩
Article dans une revue hal-00328107v1

2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam

L. Cerutti , A. Garnache , A. Ouvrard , M. Garcia , E. Cerda
Electronics Letters, 2004, 40 (14), pp.869 - 871. ⟨10.1049/el:20045067⟩
Article dans une revue hal-00327926v1

Continuous-wave operation up to 350K of optically-pumped antimony-based midinfrared VCSELs

L. Cerutti , A. Garnache , A. Ouvrard , F. Genty , E. Cerda
Proceedings of SPIE, the International Society for Optical Engineering, 2004, 5582, pp.77-87. ⟨10.1117/12.583392⟩
Article dans une revue hal-00327790v1

High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm

L. Cerutti , A. Garnache , A. Ouvrard , F. Genty
Journal of Crystal Growth, 2004, 268 (1 - 2), pp.128-134. ⟨10.1016/j.jcrysgro.2004.02.116⟩
Article dans une revue hal-00328054v1

Sb-based VCSEL operating at 2.3 µm in continuous wave regime up to 350 K with a TEM00 beam

L. Cerutti , A. Garnache , A. Ouvrard , F. Genty
Journal de Physique IV Proceedings, 2004, 119, pp.147-148. ⟨10.1051/jp4:2004119030⟩
Article dans une revue hal-00327773v1

Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm

L. Cerutti , A. Garnache , F. Genty , C. Alibert
Electronics Letters, 2003, 39 (3), pp.290 - 292. ⟨10.1049/el:20030192⟩
Article dans une revue hal-00327486v1

Type-I Quantum-Well VCSEL structure on GaSb emitting in the 2 -2.5 µm range

F. Genty , L. Cerutti , A. Garnache , E. Picard , E. Hadji
IEE Proceedings Optoelectronics, 2002, pp.149. ⟨10.1049/ip-opt:20020267⟩
Article dans une revue hal-00324343v1

Luminescence of silicon thin film and SiGe multiple quantum wells realized on SOI

T. Charvolin , M. Zelsman , M. Assous , B. Dalzotto , E. Nier
Optical Materials, 2001, 17 (1-2), pp.107-110. ⟨10.1016/S0925-3467(01)00030-1⟩
Article dans une revue cea-01996940v1
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GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs

Guilhem Almuneau , Youness Laaroussi , Christyves Chevallier , Frédéric Genty , Nicolas Fressengeas
Photonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720S-93720S-9, ⟨10.1117/12.2084515⟩
Communication dans un congrès hal-01132804v1
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Parameter-tolerant design of high contrast gratings

Christyves Chevallier , Nicolas Fressengeas , Joel Jacquet , Guilhem Almuneau , Youness Laaroussi
Photonics West, SPIE, Feb 2015, San Francisco, United States. pp.93720N-93720N-8, ⟨10.1117/12.2081595⟩
Communication dans un congrès hal-01132683v1

Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELs

Guilhem Almuneau , Youness Laaroussi , Christyves Chevallier , Frédéric Genty , Nicolas Fressengeas
ICTON 2014, Jul 2014, Graz, Austria. pp.1-4, ⟨10.1109/ICTON.2014.6876343⟩
Communication dans un congrès hal-01108786v1

AlOx/GaAs high contrast grating mirrors for mid infrared VCSELs

Youness Laaroussi , Olivier Gauthier-Lafaye , Laurent Bouscayrol , Chantal Fontaine , Laurent Cerutti
ICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, ⟨10.1109/ICTON.2012.6254396⟩
Communication dans un congrès hal-00772551v1

GaAs-based monolithic high contrast gratings for mid-infrared VCSELs

Y. Laaroussi , Olivier Gauthier-Lafaye , T. Taliercio , L. Cerutti , C. Chevallier
Semiconductor and Integrated OptoElectronics 2012 (SIOE), 2012, Cardiff, United Kingdom
Communication dans un congrès hal-01862190v1

Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μm

Christyves Chevallier , Nicolas Fressengeas , Frédéric Genty , Joel Jacquet , Youness Laaroussi
Frontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings
Communication dans un congrès hal-00642181v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

L. Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier
15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada
Communication dans un congrès hal-01826633v1

GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm

Arnaud Ducanchez , Laurent Cerutti , Pierre Grech , Frédéric Genty , Eric Tournié
CLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, ⟨10.1109/CLEOE-EQEC.2009.5192675⟩
Communication dans un congrès hal-00429890v1

Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3µm

A. Ducanchez , L. Cerutti , A. Garnache , F. Genty
IEEE IPRM 2008, 2008, Versailles, France
Communication dans un congrès hal-01825799v1

Réalisation de lasers VCSELs pompés électriquement émettant au dessus de 2.2µm en régime continu à température ambiante

A. Ducanchez , L. Cerutti , P. Grech , F. Genty
12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France
Communication dans un congrès hal-01826545v1

GaSb-based microcavity EP-VCSEL emitting above 2.2µm in CW at RT

A. Ducanchez , L. Cerutti , P. Grech , F. Genty
IEEE International Semiconductor Laser Conference (ISLC), 2008, Sorrento, Italy
Communication dans un congrès hal-01825836v1

GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy

Laurent Cerutti , A. Ducanchez , G. Narcy , P. Grech , G. Boissier
International Molecular Beam Epitaxy Conference (MBE international), 2008, Vancouver, Canada
Communication dans un congrès hal-01785734v1

Room Temperature, Sb-Based Monolithic EP-VCSEL at 2.3 µm Including 2 N-Type DBR

A. Ducanchez , L. Cerutti , A. Garnache , F. Genty
IEEE Conference on Laser and Electro-Optics,, 2008, San Jose, United States
Communication dans un congrès hal-01825809v1

Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications

F. Genty , L. Cerutti , A. Ducanchez , P. Grech , Eric Tournié
MIOMD IX, 2008, Freiburg, Germany
Communication dans un congrès hal-01785770v1

2.3 um Single-mode tunable lasers in cw at RT: design and characterization

A. Ouvrard , L. Cerutti , J. Angellier , A. Vicet , D. Barat
8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), 2006, Cadix, Spain
Communication dans un congrès hal-01798501v1

2-2.7µm Single-frequency tunable Sb-based lasers operating in cw at RT

A. Garnache , A. Ouvrard , L. Cerutti , J. Angellier , A. Vicet
Photonics Europe (SPIE), 2006, Strasbourg, France
Communication dans un congrès hal-01797236v1

2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB

A. Garnache , A. Ouvrard , L. Cerutti , D. Barat , A. Vicet
Proceedings of SPIE - The International Society for Optical Engineering, 2006, Strasbourg, France. ⟨10.1117/12.663448⟩
Communication dans un congrès hal-01793363v1

Overview of Laser diodes (FP, QCL, DFB, and VCSEL) for trace gas analysis grown by the University of Montpellier

C. Alibert , J. Angellier , D. Barat , L. Cerutti , J. Commalonga
6th international conference Tunable Diode Laser Spectroscopy (TDLS), 2005, Florence, Italy
Communication dans un congrès hal-01797293v1

2-3µm Single-frequency tunable Sb-based lasers operating in cw at RT

A. Garnache , A. Ouvrard , L. Cerutti , J. Angellier , A. Vicet
International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2005, Lancaster, United Kingdom
Communication dans un congrès hal-01797256v1

Single-frequency tunable Sb-based semiconductor lasers emitting in cw at 300K in the 2.3µm spectral range

A. Ouvrard , A. Garnache , L. Cerutti , A. Sahli , A. Vicet
International Workshop on Stable Isotope Ratio Infrared Spectrometry (SIRIS), 2004, Vienne, Austria
Communication dans un congrès hal-01797307v1

Recent progress on the heterostructures grown by MBE on GaSb and InAs. Overview of laser diodes (FP, QCL, DFB and VCSEL) and applications (trace gas analysis)

C. Alibert , J. Angellier , D. Barate , L. Cerutti , J. Commalonga
IXèmes Journées Maghrébines sur les Sciences des Matériaux (JMSM), 2004, Oran, Algeria
Communication dans un congrès hal-01797320v1