Mots-clés

Co-auteurs

Identifiants chercheur

  • IdHAL : frederic-genty
Nombre de documents

105

Frédéric Genty


Professeur à CentraleSupélec

Délégué à la Recherche du campus de Metz

Membre permanent du Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS) - Axe "Matériaux fonctionnels"

Centres d'intérêts: Matériaux pour l'Optique et la la Photonique - Composants - Systèmes


Article dans une revue47 documents

  • Mathieu Lauffer, Frédéric Genty, Samuel Margueron, Jean-Luc Collette. Morphological recognition with the addition of multi-band fluorescence excitation of chlorophylls of phytoplankton. Photosynthetica, Springer Verlag, 2016, pp.1-9. 〈10.1007/s11099-016-0663-2〉. 〈hal-01409752〉
  • Xin Li, Gaëlle Le Gac, Sophie Bouchoule, Youssef El Gmili, Gilles Patriarche, et al.. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm. Journal of crystal growth 0022-0248, 2015, 〈10.1016/j.crysgro.2015.09.013〉. 〈hal-01212591〉
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Frédéric Genty, et al.. BAlN thin layers for deep UV applications. physica status solidi (a), Wiley, 2015, 212 (4), pp.745-750. 〈10.1002/pssa.201400199〉. 〈hal-01108100〉
  • X Li, S Sundaram, Pierre Disseix, G Le Gac, S Bouchoule, et al.. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm. Optical Materials Express, OSA pub, 2015, 5 (2), pp.381-392. 〈10.1364/OME.5.000380〉. 〈hal-01108085〉
  • Xin Lin, Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAIN heterostructure with high boron content. Journal of Crystal Growth, Elsevier, 2015, 414, pp.119-122. 〈hal-01257005〉
  • Li X., Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. Journal of crystal growth 0022-0248, 2014, 414, pp.119-122. 〈hal-01212596〉
  • Samuel Margueron, Solène Ropers, Alban Maertens, Ouarda Legrani, Frédéric Genty, et al.. Effect of microwave remote plasma and radiofrequency plasma on the photoluminescence of (0001) epitaxial ZnO films. Materials Chemistry and Physics, Elsevier, 2014, 147 (3), pp.623-628. 〈10.1016/j.matchemphys.2014.05.040〉. 〈hal-01108555〉
  • Fatima Zohra Bedia, Asma Bedia, Nabila Maloufi, Michel Aillerie, Frédéric Genty, et al.. Effect of tin doping on optical properties of nanostructured ZnO thin films grown by spray pyrolysis technique. Journal of Alloys and Compounds, Elsevier, 2014, 616, pp.312-318. 〈10.1016/j.jallcom.2014.07.086〉. 〈hal-01024959〉
  • Youness Laaroussi, Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, Laurent Cerutti, et al.. Oxide confinement and high contrast grating mirrors for Mid-infrared VCSELs. Optical Materials Express, OSA pub, 2013, 3 (10), pp.1576-1585. 〈10.1364/OME.3.001576〉. 〈hal-00863150〉
  • Soufiene Ilahi, Nourreddine Yacoubi, Frédéric Genty. Two-layer photo-thermal deflection model to study the non-radiative recombination process: Application to Ga0.7In0.3As0.23Sb0.77/GaSb and Al0.3Ga0.7As0.08Sb0.92/GaSb laser structures. Journal of Applied Physics, American Institute of Physics, 2013, 113 (18), pp.183705. 〈10.1063/1.4803513〉. 〈hal-00924736〉
  • Tarik Moudakir, Frédéric Genty, Michael Kunzer, Paul Börner, Thorsten Passow, et al.. Design, fabrication and characterization of near milliwatt power RCLEDs emitting at 390 nm. IEEE Photonics Journal, Institute of Electrical and Electronics Engineers (IEEE), 2013, 5 (6), pp.8400709-1-10. 〈10.1109/JPHOT.2013.2287558〉. 〈hal-00924838〉
  • Faycel Saadallah, Sameh Abroug, Frédéric Genty, Nourreddine Yacoubi. Determination of free-carrier and phonon-assisted absorptions for Si-doped GaSb thin layers. Applied physics. A, Materials science & processing, Springer Verlag, 2013, 113 (3), pp.729-733. 〈10.1007/s00339-013-7571-0〉. 〈hal-00924740〉
  • T. Moudakir, S. Gautier, S. Suresh, M. Abid, Y. El Gmili, et al.. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE. Journal of Crystal Growth, Elsevier, 2013, 370, pp.12-15. 〈10.1016/j.jcrysgro.2012.09.061〉. 〈hal-00784993〉
  • Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, Joel Jacquet. Robust Design by Antioptimization for Parameter Tolerant GaAs/AlOx High Contrast Grating Mirror for VCSEL Application. Journal of Lightwave Technology, Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA), 2013, 31 (21), pp.3374-3380. 〈10.1109/JLT.2013.2282871〉. 〈hal-00870878〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joel Jacquet. Robust design of Si/Si3N4 high contrast grating mirror for mid-infrared VCSEL application. Optical and Quantum Electronics, Springer Verlag, 2012, 44 (3), pp.169-174. 〈10.1007/s11082-012-9578-8〉. 〈hal-00693474〉
  • Christyves Chevallier, Frédéric Genty, Joel Jacquet, Nicolas Fressengeas. Optimized Si/SiO2 high contrast grating mirror design for mid-infrared wavelength range: robustness enhancement. Optics and Laser Technology, Elsevier, 2012, 44, pp.626-630. 〈10.1016/j.optlastec.2011.09.010〉. 〈hal-00628574〉
  • Tarik Moudakir, Mohamed Abid, B.T. Doan, Etienne Demarly, Simon Gautier, et al.. Asymmetrical Design of AlGaN/GaN Distributed Bragg Reflectors for Near-UV Optoelectronic Applications. Advanced Science Letters, American Scientific Publishers, 2012, 16 (1), pp.100-104. 〈10.1166/asl.2012.3295〉. 〈hal-00776087〉
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. MRS Proceedings, 2011, 1327, pp.mrss11--1327. 〈hal-01276965〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joël Jacquet. Optimized sub-wavelength grating mirror design for mid-infrared wavelength range. Applied physics. A, Materials science & processing, Springer Verlag, 2011, 103 (4), pp.1139-1144. 〈10.1007/s00339-010-6059-4〉. 〈hal-00521032〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joel Jacquet. Mid-infrared sub-wavelength grating mirror design: tolerance and influence of technological constraints. Journal of Optics, Institute of Physics (IOP), 2011, 13 (12), pp.125502. 〈10.1088/2040-8978/13/12/125502〉. 〈hal-00647153〉
  • Imen Gaied, Salima Lassoued, Frédéric Genty, Nourreddine Yacoubi. New Photothermal Deflection Method to Determine Thermal Properties of Bulk Semiconductors. Defect and Diffusion Forum, Trans Tech Publications, 2010, Diffusion in Solids and Liquids V (297-301), pp.525-530. 〈10.4028/www.scientific.net/DDF.297-301.525〉. 〈hal-00472233〉
  • Matthieu Bardoux, Adel Bousseksou, Gilles Tessier, Sophie Bouchoule, Danièle Fournier, et al.. Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction. Optics and Lasers in Engineering, Elsevier, 2009, 47 (3-4), pp.473-476. 〈hal-00380616〉
  • Arnaud Ducanchez, Laurent Cerutti, Pierre Grech, Frédéric Genty, Eric Tournié. Mid-Infrared GaSb-based EP-VCSEL emitting at 2.63 µm. Electronics Letters, IET, 2009, 45 (5), pp.265-266. 〈10.1049/el:20090134〉. 〈hal-00380609〉
  • Laurent Cerutti, Arnaud Ducanchez, Grégoire Narcy, Pierre Grech, G. Boissier, et al.. GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by MBE. Journal of Crystal Growth, Elsevier, 2009, 311 (7), pp.1912-1916. 〈10.1016/j.jcrysgro.2008.11.026〉. 〈hal-00380447〉
  • Arnaud Ducanchez, Laurent Cerutti, Pierre Grech, Frédéric Genty. Room temperature continuous wave operation of electrically-injected Sb-based RC-LED emitting near. Superlattices and Microstructures, Elsevier, 2008, 44 (1), pp.62 - 69. 〈10.1016/j.spmi.2008.02.005〉. 〈hal-01616275〉
  • A. Ducanchez, L. Cerutti, P. Grech, F. Genty. GaSb-based monolithic EP-VCSEL emitting above 2.5 [micro sign]m. Electronics Letters, IET, 2008, 44 (23), 〈10.1049/el:20082845〉. 〈hal-01617261〉
  • L. Cerutti, A. Ducanchez, P. Grech, A. Garnache, F. Genty. Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 [micro sign]m. Electronics Letters, IET, 2008, 44 (3), 〈10.1049/el:20083424〉. 〈hal-01616288〉
  • A. Ducanchez, L. Cerutti, P. Grech, F. Genty. Room-Temperature Continuous-Wave Operation of 2.3-$\mu$m Sb-Based Electrically Pumped Monolithic Vertical-Cavity Lasers. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2008, 20 (20), pp.1745 - 1747. 〈10.1109/LPT.2008.2004997〉. 〈hal-01616306〉
  • Arnaud Ducanchez, Laurent Cerutti, Alban Gassenq, Pierre Grech, Frédéric Genty. Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction. IEEE Journal of Selected Topics in Quantum Electronics, Institute of Electrical and Electronics Engineers, 2008, 14 (4), pp.1014 - 1021. 〈10.1109/JSTQE.2008.922014〉. 〈hal-01616283〉
  • A. Pérona, A. Garnache, L. Cerutti, A. Ducanchez, S. Mihindou, et al.. AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3µm. Semiconductor Science & Technology, 2007, 22 (10), pp.1140-1144. 〈10.1088/0268-1242/22/10/010〉. 〈hal-00327771〉
  • N. Deguffroy, V. Tasco, A. N. Baranov, B. Satpati, A. Trampert, et al.. Investigations on InSb-based quantum dots grown by molecular beam epitaxy. physica status solidi (c), Wiley, 2007, 4 (5), pp.1743-1746. 〈10.1002/pssc.200674268〉. 〈hal-00327182〉
  • L. Cerutti, G. Boissier, P. Grech, A. Pérona, J. Angellier, et al.. Growth and characterization of GaInSb/GaInAsSb hole-well laser diodes emitting near 2.93 μm. Journal of Crystal Growth, Elsevier, 2007, 301-302, pp.967-970. 〈10.1016/j.jcrysgro.2006.11.057〉. 〈hal-00327288〉
  • L. Cerutti, G. Boissier, P. Grech, A. Pérona, J. Angellier, et al.. Novel Hole well antimonide laser diodes on GaSb operating near 2.93 µm. Electronics Letters, IET, 2006, 42 (24), pp.1400-1401. 〈10.1049/el:20062753〉. 〈hal-00329057〉
  • L. Cerutti, A. Garnache, A. Ouvrard, M. Garcia, F. Genty. Vertical Cavity Surface Emitting Laser Sources for Gas Detection. physica status solidi (a), Wiley, 2005, 202 (4), pp.631-635. 〈hal-00328107〉
  • A. Ouvrard, A. Garnache, L. Cerutti, F. Genty, D. Romanini. Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2005, 17 (10), pp.2020-2022. 〈hal-00330815〉
  • A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, et al.. 2-2.7μm single frequency tunable Sb–based lasers operating in CW at RT: Microcavity and External-cavity VCSELs, DFB. Optics Express, Optical Society of America, 2005, 15 (15), pp.9403-9417. 〈hal-00330456〉
  • L. Cerutti, A. Garnache, A. Ouvrard, F. Genty. Sb-based VCSEL operating at 2.3 µm in continuous wave regime up to 350 K with a TEM00 beam. Journal de Physique IV Colloque, 2004, pp.147-148. 〈10.1051/jp4:2004119030〉. 〈hal-00327773〉
  • L. Cerutti, A. Garnache, A. Ouvrard, F. Genty, E. Cerda, et al.. Continuous-wave operation up to 350K of optically-pumped antimony-based midinfrared VCSELs. SPIE Proceedings Series, 2004, 5582, pp.77-87. 〈10.1117/12.583392〉. 〈hal-00327790〉
  • L. Cerutti, A. Garnache, A. Ouvrard, M. Garcia, E. Cerda, et al.. 2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM00 output beam. Electronics Letters, IET, 2004, 40 (14), pp.869 - 871. 〈10.1049/el:20045067〉. 〈hal-00327926〉
  • L. Cerutti, A. Garnache, A. Ouvrard, F. Genty. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm. Journal of Crystal Growth, Elsevier, 2004, 268 (1 - 2), pp.128-134. 〈hal-00328054〉
  • F. Saadallah, N. Yacoubi, F. Genty, C. Alibert. Photothermal investigations of thermal and optical properties of GaAlAsSb and AlAsSb thin layers. Applied optics, Optical Society of America, 2003, 41 (36), pp.7561-7568. 〈hal-00327203〉
  • L. Cerutti, A. Garnache, F. Genty, C. Alibert. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm. Electronics Letters, IET, 2003, 39 (3), pp.290 - 292. 〈10.1049/el:20030192〉. 〈hal-00327486〉
  • F. Saadallah, N. Yacoubi, F. Genty, C. Alibert. Investigation of thermal and optical properties of Distributed Bragg Reflector By photothermal Deflection spectroscopy. Applied optics, Optical Society of America, 2002, 41 (36), pp.7561-7568. 〈hal-00324962〉
  • F. Genty, L. Cerutti, A. Garnache, E. Picard, E. Hadji, et al.. Type-I Quantum-Well VCSEL structure on GaSb emitting in the 2 -2.5 µm range. IEEE Proceeding-Optoelectronics, 2002, pp.149. 〈hal-00324343〉
  • Y. Rouillard, F. Genty, A. Pérona, A. Vicet, D. Yarekha, et al.. Edge and vertical surface emitting lasers around 2.0-2.5 m and their applications. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Royal Society, The, 2001, 359 (1780), pp.581 - 597. 〈10.1098/rsta.2000.0744〉. 〈hal-01800009〉
  • A. Wilk, F. Genty, B. Fraisse, G. Boissier, P. Grech, et al.. MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers. Journal of Crystal Growth, Elsevier, 2001, 223 (3), pp.341 - 348. 〈10.1016/S0022-0248(01)00600-5〉. 〈hal-01786381〉
  • A. Vicet, F. Genty, E.M. Skouri, C. Alibert, J.-C. Nicolas, et al.. Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm. IEE Proceedings Optoelectronics, Institution of Engineering and Technology, 2000, 147 (3), pp.172 - 176. 〈10.1049/ip-opt:20000298〉. 〈hal-01793936〉

Communication dans un congrès56 documents

  • Alban Maertens, Samuel Margueron, Frédéric Genty, Adulfas Abrutis, Belmonte Thierry, et al.. Influence of plasma treatments and Sn incorporation on Ga2O3 properties. E-MRS fall meeting 2016, Sep 2016, Varsovie, Poland. 〈http://www.european-mrs.com/meetings/2016-fall〉. 〈hal-01371975〉
  • Frédéric Genty, Alban Maertens, Samuel Margueron, Adulfas Abrutis, Thierry Belmonte, et al.. Ga2O3 filsm alloyed with SnO2 and treated by RF plasma : an interesting way for the development of transparent contacts for UV-emitting photonics devices. International Conference on Fiber Optics and Photonics - PHOTONICS2016, Dec 2016, Kanpur, India. 〈http://iitk.ac.in/photonics2016/〉. 〈hal-01422031〉
  • Mathieu Lauffer, Frédéric Genty, Samuel Margueron, Jean-Luc Collette, Jean-Claude Pihan. Automatic recognition system of aquatic organisms by classical and fluorescence microscopy. Optical Sensors 2015, Apr 2015, Prague, Czech Republic. 9506 (95061O), pp.1-7, 2015, Proceedings of SPIE 9506. 〈10.1117/12.2185055〉. 〈hal-01279497〉
  • Gaëlle Le Gac, Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, et al.. AlGaN-based MQWs emitting at 280nm for Vertical Cavity Surface Emitting Lasers. Conference on Lasers and Electro-Optics, Jun 2015, Munich, Germany. 〈hal-01257060〉
  • Guilhem Almuneau, Youness Laaroussi, Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, et al.. GaAs/AlOx high-contrast grating mirrors for mid-infrared VCSELs. Connie J. Chang-Hasnain; David Fattal; Fumio Koyama; Weimin Zhou. Photonics West, Feb 2015, San Francisco, United States. SPIE, SPIE Proceedings, 9372, pp.93720S-93720S-9, 2015, High Contrast Metastructures IV. 〈http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2190941〉. 〈10.1117/12.2084515〉. 〈hal-01132804〉
  • Christyves Chevallier, Nicolas Fressengeas, Joel Jacquet, Guilhem Almuneau, Youness Laaroussi, et al.. Parameter-tolerant design of high contrast gratings. Connie J. Chang-Hasnain; David Fattal; Fumio Koyama; Weimin Zhou. Photonics West, Feb 2015, San Francisco, United States. SPIE, SPIE Proceedings, 9372, pp.93720N-93720N-8, 2015, High Contrast Metastructures IV. 〈http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2190938〉. 〈10.1117/12.2081595〉. 〈hal-01132683〉
  • X. Li, S. Sundaram, Y. El Gmili, F. Genty, S. Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. ICMOVPE, 2015, Lausanne, Switzerland. Journal of Crystal Growth, 414, 2015. 〈hal-01170572〉
  • T. Mengis, Frédéric Genty, Thierry Aubert. Analysis of NO2 absorption cross-sections at high temperature for the developement of post-combustion gases optical sensor. IEEE Workshop on Environmental, Energy and Structural Monitoring Systems (EESMS), Jul 2015, Trento, Italy. 2015, IEEE Workshop on Environmental, Energy and Structural Monitoring Systems (EESMS) proceedings. 〈10.1109/EESMS.2015.7175867〉. 〈hal-01257590〉
  • Mathieu Lauffer, Frédéric Genty, Jean-Luc Collette, Samuel Margueron. Phytoplankton identification by combined methods of morphological processing and fluorescence imaging. EESMS, Jul 2015, Trento, Italy. pp.131-135, Proceedings of IEEE Workshop on Environmental, Energy and Structural Monitoring Systems. 〈10.1109/EESMS.2015.7175865〉. 〈hal-01286763〉
  • Mathieu Lauffer, Frédéric Genty, Samuel Margueron, Jean-Luc Collette, Annie Levey, et al.. Fluorescence imaging of plant pigments for automatical recognition of aquatic organisms. Conference on Optical Chemical Sensors and Biosensors 2014, Apr 2014, Athens, Greece. Proceedings of the XII Conference on Optical Chemical Sensors and Biosensors, pp.FS-29, 2014. 〈hal-01108885〉
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Tarik Moudakir, Pierre Disseix, et al.. AlGaN-based multi-quantum wells emitting at 285 nm grown on a thick AlGaN relaxed buffer on AlN template. 17th International Conference on MetalOrganic Vapour Phase Epitaxy, Jul 2014, Lausanne, Switzerland. Proceedings of the 17th International Conference on MetalOrganic Vapour Phase Epitaxy, pp.Mon-Poster-0-28, 2014. 〈hal-01108899〉
  • Guilhem Almuneau, Youness Laaroussi, Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, et al.. Technologies of oxide confinement and high contrast grating mirrors for mid-infrared VCSELs. ICTON 2014, Jul 2014, Graz, Austria. Proceedings of the 2014 16th International Conference on Transparent Optical Networks, pp.1-4, 2014, 〈10.1109/ICTON.2014.6876343〉. 〈hal-01108786〉
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Paul L Voss, et al.. BAlN thin layers for deep UV applications. E-MRS Spring Meeting, May 2014, Lille, France. Proceedings of the E-MRS Spring Meeting, K (III), pp.14, 2014, Challenges for group III nitride semiconductors for solid state lighting and beyond. 〈hal-01109577〉
  • Xin Li, Suresh Sundaram, Youssef El Gmili, Frédéric Genty, Sophie Bouchoule, et al.. MOVPE grown periodic AlN/BAlN heterostructure with high boron content. ICMOVPE 2014, Jul 2014, Lausanne, Switzerland. Proceedings of the 17th International Conference on MetalOrganic Vapour Phase Epitaxy, pp.1-4, 2014, Journal of Crystal Growth. 〈10.1016/j.jcrysgro.2014.09.030〉. 〈hal-01109542〉
  • Alban Maertens, Samuel Margueron, Frédéric Genty, Ouarda Legrani, Thierry Belmonte, et al.. Influence of RF Plasma on Zinc Oxide Surface Properties. Compound Semiconductor Week, May 2014, Montpellier, France. Proceedings of the Compound Semiconductor Week, 2014. 〈hal-01109404〉
  • Fatima Zohra Bedia, Asma Bedia, Michel Aillerie, Nabila Maloufi, Frédéric Genty, et al.. Influence of Al-doped ZnO Transparent Contacts Deposited by a Spray Pyrolysis Technique on Performance of HIT Solar Cells. TMREES14 International ConferenceTechnologies and Materials for Renewable Energy, Environment and Sustainability, Apr 2014, Beyrouth, Lebanon. Energy Procedia, 50, pp.853-861, 2014, TMREES14 International ConferenceTechnologies and Materials for Renewable Energy, Environment and Sustainability. 〈10.1016/j.egypro.2014.06.104〉. 〈hal-01058674〉
  • Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, Joel Jacquet. Robust design for parameter tolerant GaAs High Contrast Grating mirror for mid infrared VCSEL application. 41st Freiburg Infrared Colloquium, Feb 2013, Freiburg, Germany. 〈hal-00795962〉
  • Mathieu Lauffer, Joël Jacquet, Frédéric Genty, Samuel Margueron, Jean-Luc Collette. Traitement d'images pour la reconnaissance d'organismes aquatiques. 8èmes Journées "Imagerie optique non conventionnelle", GDR ISIS et Ondes, Mar 2013, Paris, France. 〈hal-00924987〉
  • Tarik Moudakir, Simon Gautier, Suresh Sundaram, Mohamed Abid, Konstantinos Pantzas, et al.. Suppression of Crack Generation in AlGaN/GaN Distributed Bragg Reflector Grown by MOVPE. IC-MOVPE 2012, May 2012, Busan, South Korea. 〈hal-00776095〉
  • Youness Laaroussi, Olivier Gauthier-Lafaye, L. Bouscayrol, Chantal Fontaine, Laurent Cerutti, et al.. AlOx/GaAs high contrast grating mirrors for mid infrared VCSELs. ICTON 2012, Jul 2012, Coventry, United Kingdom. pp.1-3, 2012, 〈10.1109/ICTON.2012.6254396〉. 〈hal-00772551〉
  • Christyves Chevallier, Frédéric Genty, Nicolas Fressengeas, Joel Jacquet. Robust design of subwavelength grating mirror for mid-infrared VCSEL application. Numerical Simulation of Optoelectronic Devices NUSOD 2011, Sep 2011, Rome, Italy. 2 p. - ISBN:978-1-61284-877-8, 2011, 〈10.1109/NUSOD.2011.6041173〉. 〈hal-00628591〉
  • Frédéric Genty, Samuel Margueron, Sidi Ould Saad Hamady, Jean-Claude Petit, Hussein Srour, et al.. Low Temperature Transparent ITO-based Contacts for Mid-IR Applications. 2011 MRS Spring Meeting and Exhibit, Apr 2011, San Francisco, United States. 1327, mrss11-1327-g09-02-s08-02 (6 p.), 2011, 〈10.1557/opl.2011.1123〉. 〈hal-00652277〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joel Jacquet, Youness Laaroussi, et al.. Optimized GaAs High Contrast Grating Design and Fabrication for Mid-infrared Application at 2.3 μm. Frontiers in Optics 2011, Oct 2011, San Jose, United States. pp.CD-ROM Proceedings, 2011. 〈hal-00642181〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joël Jacquet. Optimized sub-wavelength grating mirror design for mid infrared wavelength range. Journées Nano, Micro et Optoélectronique, Sep 2010, Les Issambres, France. 〈hal-00536555〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joël Jacquet. Optimized sub-wavelength grating mirror design for mid-infrared wavelength range. NANOSMAT-5, Oct 2010, Reims, France. CD-ROM, NANO-377 (3 p.), 2010. 〈hal-00537142〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joël Jacquet. Optimized sub-wavelength grating mirror design for mid-infrared wavelength range. EOS Annual Meeting 2010, Oct 2010, Paris, France. pp.CD-ROM (TOM3_3493_05), 2010. 〈hal-00558012〉
  • Frédéric Genty. Mid Infrared InGaAsSb based laser for gas detection. International Travelling Summer School on Microwaves and Lightwaves (ITSS 2010), Jul 2010, Metz, France. 〈hal-00555016〉
  • Alexandru Zorila, Joel Jacquet, Abdallah Ougazzaden, Frédéric Genty. Modelling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors. OPTO 2010 - Part of SPIE Photonics West, Jan 2010, San Francisco, United States. 7597, pp.0C, 2010, 〈10.1117/12.842074〉. 〈hal-00461641〉
  • T. Moudakir, M. Abid, B. T. Doan, E. Demarly, S. Gautier, et al.. Asymmetrical design for non-relaxed near-UV AlGaN/GaN Distributed Bragg Reflectors. SPIE Asia, Oct 2010, China. 〈hal-00554334〉
  • Christyves Chevallier, Nicolas Fressengeas, Frédéric Genty, Joel Jacquet. Optimized subwavelength grating mirror design for mid-infrared wavelength range. INTERREG IV A NANODATA JOURNEES SUR LES NANOTECHNOLOGIES, Nov 2010, Metz, France. 〈hal-00557011〉
  • Tarik Moudakir, Mohamed Abid, Bich-Thuy Doan, Etienne Demarly, Simon Gautier, et al.. Asymmetrical design for non-relaxed near-UV AlGaN/GaN distributed Bragg reflectors. Xuping Zhang; Hai Ming; Alan Xiaolong Wang. SPIE Photonics Asia 2010, Oct 2010, Beijing, China. 7847, pp.0B, 2010, 〈10.1117/12.871826〉. 〈hal-00544649〉
  • L. Cerutti, A. Ducanchez, G. Narcy, P. Grech, G. Boissier, et al.. GaSb-based VCSELs emitting in the mid-infrared wavelength range (2-3 µm) grown by molecular beam epitaxy. 15th Int. Conf. on Molecular-Beam Epitaxy (MBE-15), 2009, Vancouver, Canada. 〈hal-01826633〉
  • Abdelwaheb Hamdi, Nourreddine Yacoubi, Frédéric Genty, Yves Rouillard, Aurore Vicet. Paraffin oil thermal diffusivity determination using a photothermal deflection setup with a 2.3μm pump: a first step towards methane detection. 15th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP15), Jul 2009, Leuven, Belgium. 214 (1), pp.012121-1-5, 2010, 〈10.1088/1742-6596/214/1/012121〉. 〈hal-00474038〉
  • Arnaud Ducanchez, Laurent Cerruti, Pierre Grech, Frédéric Genty, Eric Tournié. GaSb-based mid-IR electrically-pumped VCSELs covering the wavelength range from 2.3 to 2.7 µm. CLEO Europe - EQEC 2009, Jun 2009, Munich, Germany. pp.1-1, 2009, 〈10.1109/CLEOE-EQEC.2009.5192675〉. 〈hal-00429890〉
  • A. Hamdi, F. Genty, N. Yacoubi, Y. Rouillard, A. Vicet. Application of mirage effect to methane detection at 2.3µm. ICPPP15, 2009, Leuven, Belgium. 〈hal-01798428〉
  • A. Ducanchez, L. Cerutti, A. Garnache, F. Genty. Monolithic, Sb-based Electrically pumped VCSELs emitting at 2.3µm. IEEE IPRM 2008, 2008, Versailles, France. 〈hal-01825799〉
  • A. Ducanchez, L. Cerutti, A. Garnache, F. Genty. Room Temperature, Sb-Based Monolithic EP-VCSEL at 2.3 µm Including 2 N-Type DBR. IEEE Conference on Laser and Electro-Optics,, 2008, San Jose, United States. 〈hal-01825809〉
  • F. Genty, L. Cerutti, A. Ducanchez, P. Grech, Eric Tournié. Recent progress on electrically-pumped GaSb-based VCSELs emittingabove 2 µm for sensing applications. MIOMD IX, 2008, Freiburg, Germany. 〈hal-01785770〉
  • A. Ducanchez, L. Cerutti, P. Grech, F. Genty. Réalisation de lasers VCSELs pompés électriquement émettant au dessus de 2.2µm en régime continu à température ambiante. 12èmes Journées Nano et Micro-électronique et Optoélectronique, 2008, Oléron, France. 〈hal-01826545〉
  • Sameh Abroug, Faycel Saadallah, Frédéric Genty, Nourreddine Yacoubi. Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy. 11ème Journées Maghrébines des Sciences de Matériaux - JMSM 2008, Nov 2008, Hammamet, Tunisia. 2 (3), pp.787-795, 2009, 〈10.1016/j.phpro.2009.11.026〉. 〈hal-00462204〉
  • A. Ducanchez, L. Cerutti, P. Grech, F. Genty. GaSb-based microcavity EP-VCSEL emitting above 2.2µm in CW at RT. IEEE International Semiconductor Laser Conference (ISLC), 2008, Sorrento, Italy. 〈hal-01825836〉
  • M. Bardoux, A. Bousseksou, G. Tessier, S. Bouchoule, D. Fournier, et al.. Thermoreflectance imaging of laser diodes and VCSELs along and perpendicular to the emission direction. Workshop on Optical Measurement Techniques for Structures and Systems, 2007, Leuven, Belgium. 〈hal-01827306〉
  • A. Garnache, A. Ouvrard, L. Cerutti, J. Angellier, A. Vicet, et al.. 2-2.7µm Single-frequency tunable Sb-based lasers operating in cw at RT. Photonics Europe (SPIE), 2006, Strasbourg, France. 〈hal-01797236〉
  • A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, et al.. 2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB. Proceedings of SPIE - The International Society for Optical Engineering, 2006, Strasbourg, France. 〈10.1117/12.663448〉. 〈hal-01793363〉
  • A. Ouvrard, L. Cerutti, J. Angellier, A. Vicet, D. Barat, et al.. 2.3 um Single-mode tunable lasers in cw at RT: design and characterization. 8th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC), 2006, Cadix, Spain. 〈hal-01798501〉
  • C. Alibert, J. Angellier, D. Barat, L. Cerutti, J. Commalonga, et al.. Overview of Laser diodes (FP, QCL, DFB, and VCSEL) for trace gas analysis grown by the University of Montpellier. 6th international conference Tunable Diode Laser Spectroscopy (TDLS), 2005, Florence, Italy. 〈hal-01797293〉
  • G. Tessier, A. Salhi, Y. Rouillard, F. Genty, J. Roger, et al.. Quantitative thermal imaging of GalnAsSb/AlGaAsSb laser diodes by thermoreflectance. 13th ICPPP International Conference on Photoacoustic and Photothermal Phenomena, 2005, Rio de Janeiro, Brazil. 〈hal-01793379〉
  • A. Garnache, A. Ouvrard, L. Cerutti, J. Angellier, A. Vicet, et al.. 2-3µm Single-frequency tunable Sb-based lasers operating in cw at RT. International Conference on Mid-Infrared Optoelectronics Materials and Devices (MIOMD), 2005, Lancaster, United Kingdom. 〈hal-01797256〉
  • A. Ouvrard, A. Garnache, L. Cerutti, A. Sahli, A. Vicet, et al.. Single-frequency tunable Sb-based semiconductor lasers emitting in cw at 300K in the 2.3µm spectral range. International Workshop on Stable Isotope Ratio Infrared Spectrometry (SIRIS), 2004, Vienne, Austria. 〈hal-01797307〉
  • C. Alibert, J. Angellier, D. Barate, L. Cerutti, J. Commalonga, et al.. Recent progress on the heterostructures grown by MBE on GaSb and InAs. Overview of laser diodes (FP, QCL, DFB and VCSEL) and applications (trace gas analysis). IXèmes Journées Maghrébines sur les Sciences des Matériaux (JMSM), 2004, Oran, Algeria. 〈hal-01797320〉
  • G. Tessier, A. Salhi, Y. Rouillard, F. Genty, J-P. Roger, et al.. Quantitative thermal imaging of GaInAsSb/AlGaAsSb laser diodes by thermoreflectance. 13th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), 2004, Rio de Janeiro, Brazil. 〈hal-01798860〉
  • C. Alibert, A. N. Baranov, G. Boissier, S. Gaillard, F. Genty, et al.. Récents progrès dans les lasers à base d’antimoniures et application à la détection de traces de gaz. JNOG 2000, 2000, Toulouse, France. 〈hal-01805172〉
  • R. Alabédra, C. Alibert, A. N. Baranov, G. Boissier, F. Genty, et al.. Novel GaInAsSb/GaAlAsSb Mid-Infrared Lasers Designed for Gas Analysis. COMMAD 2000, 2000, Melbourne, Australia. 〈hal-01798941〉
  • C. Alibert, A. N. Baranov, F. Genty, A. Joullié, A. Pérona, et al.. Edge and vertical surface emitting lasers around 2.0-2.5µm and their applications. Semiconductor light sources for Mid-IR applications, 2000, London, United Kingdom. 〈hal-01798944〉
  • A. Vicet, J.-C. Nicolas, F. Genty, Y. Rouillard, E.M. Skouri, et al.. Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 µm. Mid-IR Optoelectronics: Materials and Devices (MIOMD), 1999, Aachen, Germany. 〈hal-01793950〉
  • D. Yarekha, J. -L. Delor, G. Glastre, Y. Rouillard, E. M. Skouri, et al.. Efficient GaInSbAs/GaSb type II quantum well room temperature cw lasers. 3rd International Conference on Mid-infrared Optoelectronics Materials and Devices (MIOMD), 1999, Aachen, Germany. 〈hal-01798958〉

Poster2 documents

  • Alban Maertens, Samuel Margueron, Frédéric Genty, Adulfas Abrutis, Thierry Belmonte, et al.. Influence of plasma treatments and SnO2 alloying on the conductive properties of epitaxial Ga2O3 films deposited on C-sapphire by chemical vapor deposition. Compound Semicondcutor Week 2016, Jun 2016, Toyama, Japan. 〈http://csw-jpn.org/〉. 〈hal-01341006〉
  • M. Lauffer, F. Genty, S. Margueron, J.L. Collette, A. Le Vey, et al.. Fluorescence imaging of plant pigments for automatic recognition of aquatic organisms. Europtrode XIΙ, Apr 2014, Athènes, Greece. 〈hal-01117174〉