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2D and 3D Terahertz Imaging and X-Rays CT for Sigillography Study

 Patrick Mounaix , Jean-Paul Guillet , F. Fauquet , H. Balacey , B. Recur , et al.
Journal of Infrared, Millimeter and Terahertz Waves, 2017, 38 (4), pp.483 - 494. ⟨10.1007/s10762-017-0356-3⟩
Article dans une revue hal-01653623v1

Test de circuits intégrés par faisceau laser pulsé

 Dean Lewis , Vincent Pouget , Frédéric Darracq , Hervé Lapuyade , Pascal Fouillat
Colloque Interdisciplinaire en Instrumentation (C2I), 2001, France. pp.1
Communication dans un congrès hal-00185412v1

Influence of Laser Pulse Duration in Single Event Upset Testing

 Alexandre Douin , Vincent Pouget , Frédéric Darracq , Dean Lewis , Pascal Fouillat , et al.
8th European Conference on Radiation and its Effects on Components and Systems (RADECS) 2005, Sep 2005, Cap d'Agde, France. pp.1-7
Communication dans un congrès hal-00397942v1

Optimizing pulsed OBIC technique for ESD defect localization

 Fabien Essely , Nicolas Guitard , Frédéric Darracq , Vincent Pouget , Marise Bafleur , et al.
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2006, Singapour, Singapore. pp.270-275, 10.1109/IPFA.2006.251044, ⟨10.1109/IPFA.2006.251044⟩
Communication dans un congrès hal-00204574v1

Impact of Negative Bias Temperature Instability on the Single-Event Upset Threshold of a 65nm SRAM cell

 I. El Moukhtari , V. Pouget , C. Larue , Frédéric Darracq , D. Lewis , et al.
ESREF 2013, 2013, Arcachon, France
Communication dans un congrès hal-01935692v1

Temperature Effect on Reflected Laser Probing Signal of Multiple Elementary Substructures

 Mohamed Rebai , Frédéric Darracq , Jean-Paul Guillet , Philippe Perdu , Kévin Sanchez , et al.
21th International symposium on the Physical and Failure Analysis of integrated circuits (IPFA), Jun 2014, Singapour, Singapore. pp.374-378
Communication dans un congrès hal-01020683v1

Application of various optical techniques for ESD defect localization

 Fabien Essely , Frédéric Darracq , Vincent Pouget , Mustapha Remmach , Félix Beaudoin , et al.
Microelectronics Reliability, 2006, 46 (9-11), pp.1563-1568, 10.1016/j.microrel.2006.07.021. ⟨10.1016/j.microrel.2006.07.021⟩
Article dans une revue istex hal-00204570v1

Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

 Issam El Moukhtari , Vincent Pouget , Frédéric Darracq , Camille Larue , Philippe Perdu , et al.
IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2635-2639. ⟨10.1109/TNS.2012.2231437⟩
Article dans une revue hal-00880480v1

Evaluation of SRAMs Reliability for Space Electronics Using Ultra Short Laser Pulses

 Frédéric Darracq , Hervé Lapuyade , Pascal Fouillat , Vincent Pouget , Dean Lewis , et al.
19th Symposium on Microelectronics Technology and Devices (SBMicro 2004), 2004, Brazil. pp.1
Communication dans un congrès hal-00185409v1

Evaluation of SRAMs reliability for space electronics using ultrashort laser pulses

 Frédéric Darracq , Herve Lapuyade , Pascal Fouillat , Vincent Pouget , Dean Lewis , et al.
Journal of Integrated Circuits and Systems, 2006, 1 (3), pp.11 -16
Article dans une revue hal-00359396v1

Comprehensive Study into Underlying Mechanisms of Anomalous Gate Leakage Degradation in GaN High Electron Mobility Transistors

 Mukherjee Kalparupa , Frédéric Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
IRPS 2018, Mar 2018, San Francisco, United States
Communication dans un congrès hal-01718850v1

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

 Mukherjee Kalparupa , Frédéric Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
Microelectronics Reliability, 2017
Article dans une revue hal-01625567v1

Investigation of Trapping Behaviour in GaN HEMTs through physical TCAD Simulation of Capacitance Voltage characteristics

 Mukherjee Kalparupa , Frédéric Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
EuroSimE 2018, Apr 2018, Toulouse, France. ⟨10.1109/EuroSimE.2018.8369924⟩
Communication dans un congrès hal-01718857v1

TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices

 Kalparupa Mukherjee , Frederic Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
ESREF 2017, Sep 2017, Bordeaux, France
Communication dans un congrès hal-02462694v1

Radiation Hardness Assessment of an ADC for Space Application using a Laser Test Equipment

 Vincent Pouget , Pascal Fouillat , Dean Lewis , Frédéric Darracq
Proc. of XIX Conference on Design of Circuits and Integrated Systems (DCIS) 2004, ISBN 2-9522971-0-X, Nov 2004, Bordeaux, France
Communication dans un congrès hal-01887701v1

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs

 Mukherjee Kalparupa , Frédéric Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
2018 IEEE International Reliability Physics Symposium (IRPS), Mar 2018, Burlingham, United States. ⟨10.1109/IRPS.2018.8353581⟩
Communication dans un congrès hal-01787593v1

Frequency modulated continuous wave terahertz imaging for art restoration

 Jean-Paul Guillet , Kejian Wang , Marie Roux , Frederic Fauquet , Frédéric Darracq , et al.
IRMMW 2016, Sep 2016, Copenhagen, Denmark. ⟨10.1109/IRMMW-THz.2016.7758717⟩
Communication dans un congrès hal-01418837v1

Optical parametric amplification in gas-filled hollow core capillary for the generation of tunable pulses in the infrared

 Olivia Zurita-Miranda , Coralie Fourcade Dutin , Pierre Béjot , Frederic Fauquet , Jean-Paul Guillet , et al.
9TH EPS-QEOD EUROPHOTON, EPS, Aug 2020, Prague, Czech Republic
Communication dans un congrès hal-02965824v1

Fundamentals of the Pulsed Laser Technique for single-event upset testing

 Pascal Fouillat , Vincent Pouget , D. Mcmorrow , Frédéric Darracq , S. Buchner , et al.
School on the Effects of Radiation on Embedded Systems for Space Application (SERESSA), 2005, Manaus, Brazil
Communication dans un congrès hal-00401314v1

Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects

 Frédéric Darracq , Hervé Lapuyade , N. Buard , Pascal Fouillat , R. Dufayel , et al.
Microelectronics Reliability, 2003, 43, pp.1
Article dans une revue hal-00185396v1

Single-event Sensitivity of a single SRAM cell

 Frédéric Darracq , Thomas Beauchene , Vincent Pouget , Hervé Lapuyade , Dean Lewis , et al.
RADECS, 2001, France. pp.1
Communication dans un congrès hal-00185411v1

Investigation of single event burnout sensitive depth in power MOSFETS

 Frédéric Darracq , V. Pouget , D. Lewis , P. Fouillat , E. Lorfèvre , et al.
2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS),, Sep 2009, Bruges, Belgium. pp.106 - 111
Communication dans un congrès hal-00667364v1

Evaluation of a Design Methodology Dedicated to Dose-Rate-Hardened Linear Integrated Circuits

 Yann Deval , Hervé Lapuyade , Pascal Fouillat , H. J. Barnaby , Frédéric Darracq , et al.
IEEE Transactions on Nuclear Science, 2002, 49, pp.1468-1473
Article dans une revue hal-00184299v1

Terahertz imaging and tomography as efficient instruments for testing polymer additive manufacturing objects

 Jean Baptiste Perraud , Anne Françoise Obaton , Joyce Bou-Sleiman , Benoit Recur , Hugo Balacey , et al.
Applied optics, 2016, 55, pp.3462 - 3462. ⟨10.1364/AO.55.003462.v003⟩
Article dans une revue hal-01390875v1

Investigation of the trap-limited transient response of GaN HEMTs

 Mukherjee Kalparupa , Frédéric Darracq , Arnaud Curutchet , Nathalie Malbert , Nathalie Labat
2018 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop, Jul 2018, Brives, France. ⟨10.1109/INMMIC.2018.8430007⟩
Communication dans un congrès hal-01851997v1

A New Laser System for X-Rays Flashes Sensitivity Evaluation

 Dean Lewis , Hervé Lapuyade , Yann Deval , Yvan Maidon , Frédéric Darracq , et al.
Proc. of the 7th IEEE International On-Line Testing Workshop, 2001, Italy. pp.1
Communication dans un congrès hal-00184302v1

A Review and some Future Prospects on Laser-Based Techniques for Single-Event Effects Testing and Analysis

 Pascal Fouillat , Vincent Pouget , Dean Lewis , Frédéric Darracq
International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA), 2006, Tokyo, Japan
Communication dans un congrès hal-00398038v1

Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell

 Issam El Moukhtari , Vincent Pouget , Camille Larue , Frédéric Darracq , D. Lewis , et al.
Microelectronics Reliability, 2013, 53 (9-11), pp.1325-1328. ⟨10.1016/j.microrel.2013.07.129⟩
Article dans une revue istex hal-00880459v1

Characterization and modeling of laser-induced single-event burn-out in SiC power diodes

 Nogaye Mbaye , Vincent Pouget , Frédéric Darracq , D. Lewis
Microelectronics Reliability, 2013, 53 (9-11), pp.1315-1319. ⟨10.1016/j.microrel.2013.07.113⟩
Article dans une revue istex hal-00880471v1
Image document

Tunable source of infrared pulses in gas-filled hollow core capillary

 Olivia Zurita-Miranda , Coralie Fourcade-Dutin , Pierre Béjot , Frederic Fauquet , Jean-Paul Guillet , et al.
Laser Congress (virtual event), OSA, Oct 2020, San Diego, France
Communication dans un congrès hal-02965842v1
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