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Frédéric CAYREL
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Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline facesNanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩
Article dans une revue
hal-01810904v1
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