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Frédéric CAYREL

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Publications

A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy

Georgio El-Zammar , Arnaud Yvon , Wahid Khalfaoui , Maher Nafouti , Frédéric Cayrel
Materials Science in Semiconductor Processing, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
Article dans une revue hal-02140135v1

Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer

Wahid Khalfaoui , Thomas Oheix , Georgio El-Zammar , Roland Benoit , Frédéric Cayrel
physica status solidi (a), 2017, 214 (4), ⟨10.1002/pssa.201600438⟩
Article dans une revue hal-01721021v1

Investigation of ferromagnetic heterogeneities in La 0.7 Sr 0.3 MnO 3 thin films

Silvana Mercone , B Belmeguenai , M Malo , F. Ott , Frédéric Cayrel
Journal of Physics D: Applied Physics, 2017, 50 (4), pp.045001. ⟨10.1088/1361-6463/aa50be⟩
Article dans une revue hal-01862707v1
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Optimization of VLS Growth Process for 4H-SiC P/N Junctions

Selsabil Sejil , Mihai Lazar , Frédéric Cayrel , Davy Carole , Christian Brylinski
Materials Science Forum, 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩
Article dans une revue hal-01388031v1
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Single-crystalline ZnO sheet Source-Gated Transistors

Abhishek Singh Dahiya , Charles Opoku , R A Sporea , Balasubramaniam Sarvankumar , G. Poulin-Vittrant
Scientific Reports, 2016, 6, pp.19232. ⟨10.1038/srep19232⟩
Article dans une revue hal-02077037v1

Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors

Abhishek Singh Dahiya , Charles Opoku , Frédéric Cayrel , Damien Valente , Guylaine Poulin-Vittrant
Thin Solid Films, 2016, 617, pp.114-119. ⟨10.1016/j.tsf.2016.02.021⟩
Article dans une revue hal-02069635v1

Porosity and Thickness Characterization of Porous Si and Oxidized Porous Si layers – an ultraviolet-visible-mid Infrared Ellipsometry Study

Balint Fodor , Emil Agocs , Benjamin Bardet , Thomas Defforge , Frederic Cayrel
Microporous and Mesoporous Materials, 2016, 227, pp.112-120. ⟨10.1016/j.micromeso.2016.02.039⟩
Article dans une revue hal-01784759v1

Zinc Oxide Sheet Field-Effect Transistors

Abhishek Singh Dahiya , Charles Opoku , Christopher Oshman , Guylaine Poulin-Vittrant , Frédéric Cayrel
Applied Physics Letters, 2015, 107 (3), pp.033105. ⟨10.1063/1.4927270⟩
Article dans une revue hal-01831015v1

Fabrication of high performance field-effect transistors and practical Schottky contacts using hydrothermal ZnO nanowires

Charles Opoku , Abhishek Singh Dahiya , Christopher Oshman , Christophe Daumont , Frédéric Cayrel
Nanotechnology, 2015, 26 (35), pp.355704. ⟨10.1088/0957-4484/26/35/355704⟩
Article dans une revue hal-02077067v1

Fabrication of Field-Effect Transistors and Functional Nanogenerators Using Hydrothermally Grown ZnO Nanowires

Charles Opoku , Abhishek Singh Dahiya , Frédéric Cayrel , Guylaine Poulin-Vittrant , Daniel Alquier
RSC Advances, 2015, 5 (86), pp.69925-69931. ⟨10.1039/C5RA11450K⟩
Article dans une revue hal-01831012v1

Surface State of GaN after Rapid-Thermal-Annealing Using AlN Cap-Layer

Georgio El-Zammar , Wahid Khalfaoui , Thomas Oheix , Arnaud Yvon , Emmanuel Collard
Applied Surface Science, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩
Article dans une revue hal-01784768v1
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Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

Charles Opoku , Abhishek Singh Dahiya , Christopher Oshman , Frédéric Cayrel , Guylaine Poulin-Vittrant
Physics Procedia, 2015, 70, pp.858-862. ⟨10.1016/j.phpro.2015.08.176⟩
Article dans une revue hal-02092564v1

Characterization of In-Depth Cavity Distribution after Thermal Annealing of Helium-Implanted Silicon and Gallium Nitride

Balint Fodor , Frédéric Cayrel , E. Agocs , Daniel Alquier , M. Fried
Thin Solid Films, 2014, 571, pp.567-572. ⟨10.1016/j.tsf.2014.02.014⟩
Article dans une revue hal-01784778v1

Controlled Growth of 1D and 2D ZnO Nanostructures on 4H-SiC Using Au Catalyst

Abhishek Singh Dahiya , Charles Opoku , Daniel Alquier , Guylaine Poulin-Vittrant , Frederic Cayrel
Nanoscale Research Letters, 2014, 9 (1), pp.379. ⟨10.1186/1556-276X-9-379⟩
Article dans une revue hal-01831021v1

Systematic Study of Anodic Etching of Highly Doped N-Type 4H-SiC in Various HF Based Electrolytes

Gaël Gautier , Jérôme Biscarrat , Damien Valente , Thomas Defforge , A. Gary
Journal of The Electrochemical Society, 2013, 160 (9), pp.D372-D379. ⟨10.1149/2.082309jes⟩
Article dans une revue hal-01810897v1

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

David Schenk , Alexis Bavard , Eric Frayssinet , Xi Song , Frédéric Cayrel
Applied Physics Express, 2012, 5 (2), pp.025504. ⟨10.1143/APEX.5.025504⟩
Article dans une revue hal-01810916v1

Si Implanted Reactivation in GaN Grown on Sapphire Using AlN and Oxide Cap Layers

Frédéric Cayrel , Anne-Elisabeth Bazin , Mohamed Lamhamdi , Y. Benchanaa , Olivier Ménard
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 272, pp.137-140. ⟨10.1016/j.nimb.2011.01.050⟩
Article dans une revue hal-01810910v1

Room light anodic etching of highly doped n-type 4 H-SiC in high-concentration HF electrolytes: Difference between C and Si crystalline faces

Gaël Gautier , Frédéric Cayrel , Marie Capelle , Jérôme Billoue , Xi Song
Nanoscale Research Letters, 2012, 7 (1), pp.367-373. ⟨10.1186/1556-276X-7-367⟩
Article dans une revue hal-01810904v1

Carrier Profiling in Si-Implanted Gallium Nitride by Scanning Capacitance Microscopy

Mohamed Lamhamdi , Frédéric Cayrel , Anne-Elisabeth Bazin , Emmanuel Collard , Daniel Alquier
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 275, pp.37-40. ⟨10.1016/j.nimb.2011.12.003⟩
Article dans une revue hal-01810912v1

Recent Progresses in GaN Power Rectifier

Daniel Alquier , Frédéric Cayrel , Olivier Ménard , Anne-Elisabeth Bazin , Arnaud Yvon
Japanese Journal of Applied Physics, 2012, 51 (1S), pp.01AG08. ⟨10.1143/JJAP.51.01AG08⟩
Article dans une revue hal-01810909v1

RF Planar Inductor Electrical Performances on N-Type Porous 4H Silicon Carbide

Gaël Gautier , Marie Capelle , Jérôme Billoue , Frédéric Cayrel , Patrick Poveda
IEEE Electron Device Letters, 2012, 33 (4), pp.477-479. ⟨10.1109/LED.2012.2185478⟩
Article dans une revue hal-01810907v1

TiAl Ohmic Contact on GaN, in Situ High or Low Doped or Si Implanted, Epitaxially Grown on Sapphire or Silicon

Frédéric Cayrel , Olivier Ménard , Arnaud Yvon , Nicolas Thierry-Jébali , Christian Brylinsky
physica status solidi (a), 2012, 209 (6), pp.1059-1066. ⟨10.1002/pssa.201127564⟩
Article dans une revue hal-01810914v1
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Low temperature (down to 450° C) annealed TiAl contacts on N-type gallium nitride characterized by differential scanning calorimetry

N. Thierry-Jebali , O. Menard , R. Chiriac , E. Collard , C. Brylinski
physica status solidi (c), 2011, 8 (2), pp.447--449
Article dans une revue hal-00763471v1