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237 résultats
Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩
Communication dans un congrès
hal-00549924v1
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100mV noise performances of Te-doped Sb-HEMT8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩
Communication dans un congrès
hal-00549922v1
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Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès
hal-01020278v1
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Comparative study of laterally asymmetric channel and conventional MOSFETs7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.96-99, ⟨10.1109/SCED.2009.4800439⟩
Communication dans un congrès
hal-00474096v1
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Temperature noise model for FET mixersUNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS: UPoN'99: Second International Conference, Jul 1999, Adelaide, Australia. pp.541-546
Communication dans un congrès
hal-00157898v1
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Noise modeling in fully depleted SOI MOSFETsSolid-State Electronics, 2004, 48, pp.813-825
Article dans une revue
hal-00133880v1
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Caractérisation et extraction du schéma équivalent petit signal en bande G de transistor bipolaire à hétérojonction SiGe:C de dernière génération et montrant des performances fT/fmax=300/400 GHz18èmes Journées Nationales Microondes, JNM 2013, May 2013, Paris, France. papier J2-DA-P11, 4 p
Communication dans un congrès
hal-01402473v1
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On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs2005, pp.745-748
Communication dans un congrès
hal-00125309v1
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Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETsIEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩
Communication dans un congrès
hal-00284387v1
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Low frequency noise into phase noise in FETsIEEE MTT-S International Microwave Symposium, Workshop on : Device Low Frequency Noise and Phase Noise of Microwave Circuits : How Good a Connection ?, 2003, Philadelphia, PA, United States
Communication dans un congrès
hal-00146039v1
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Microscopic analysis of the high-frequency noise behaviour of fully-depleted silicon-on-insulator MOSFETs2003, pp.585-588
Communication dans un congrès
hal-00145998v1
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A 40 GHz single-ended down-conversion mixer in 0.13 µm SiGeC BiCMOS HBTIEEE Microwave and Wireless Components Letters, 2005, 15, pp.496-498
Article dans une revue
hal-00124964v1
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Bias point optimization for low power/low noise applications of advanced SiGe HBT6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.386-389
Communication dans un congrès
hal-00799967v1
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High-frequency noise performance of 60-nm gate-length FinFETsIEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩
Article dans une revue
hal-00356670v1
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Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlationIEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩
Article dans une revue
hal-00356669v1
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Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-bandEuropean Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference, Oct 2013, Nuremberg, Germany
Communication dans un congrès
hal-01402459v1
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Extraction des performances AC et bruit HF d'une technologie CMOS 45 nm en gamme mmW17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 162, 6E3, 1-4
Communication dans un congrès
hal-00597146v1
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High performance GaN on Si transistors up to 40 GHz36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, May 2012, Porquerolles, France
Communication dans un congrès
hal-00797334v1
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Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHzIEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩
Article dans une revue
hal-00786956v1
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A 4-fJ/spike artificial neuron in 65 nm CMOS technologyFrontiers in Neuroscience, 2017, 11, pp.123. ⟨10.3389/fnins.2017.00123⟩
Article dans une revue
hal-03283312v1
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High performance CMOS with enhanced property of mechanical flexibilityCMOS Emerging Technologies Research Symposium, 2014, Grenoble, France
Communication dans un congrès
hal-00976625v1
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On-wafer differential noise figure measurement without couplers on a vector network analyzer84th ARFTG Microwave Measurement Conference, Dec 2014, Boulder, United States. ⟨10.1109/ARFTG.2014.7013403⟩
Communication dans un congrès
hal-03272692v1
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Application-oriented performance of RF CMOS technologies on flexible substratesIEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. ⟨10.1109/IEDM.2015.7409707⟩
Communication dans un congrès
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Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510217⟩
Communication dans un congrès
hal-03272698v1
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A 283 GHz low power heterodyne receiver with on-chip local oscillator in 65 nm CMOS processIEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, 2013, Seattle, WA, United States. paper RTU1C-3, 301-304, ⟨10.1109/RFIC.2013.6569588⟩
Communication dans un congrès
hal-00877841v1
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60 GHz UWB transmitter for use in WLAN communicationInternational Symposium on Signals, Systems, and Electronics, ISSSE 2007, 2007, Canada. pp.371-374, ⟨10.1109/ISSSE.2007.4294490⟩
Communication dans un congrès
hal-00284059v1
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Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391
Communication dans un congrès
hal-00922492v1
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Noise in devices and circuits II – Proceedings of SPIE Vol. 5470SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, 585 p., 2004
Ouvrages
hal-00131720v1
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Non-linear modeling of the kink effect in deep sub-micron SOI MOSFET2004, pp.47-50
Communication dans un congrès
hal-00133900v1
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Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.125-128, ⟨10.1109/ESSDERC.2009.5331397⟩
Communication dans un congrès
hal-00474099v1
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