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Tellurium delta-doped 120nm AlSb/InAs HEMTs : towards sub-100mV electronics

Yannick Roelens , A. Olivier , L. Desplanque , A. Noudeviwa , Francois Danneville , et al.
68th Device Research Conference, DRC 2010, 2010, United States. pp.53-54, ⟨10.1109/DRC.2010.5551945⟩
Communication dans un congrès hal-00549924v1

100mV noise performances of Te-doped Sb-HEMT

A. Noudeviwa , A. Olivier , Yannick Roelens , Francois Danneville , Nicolas Wichmann , et al.
8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, 2010, Slovakia. pp.25-28, ⟨10.1109/ASDAM.2010.5667012⟩
Communication dans un congrès hal-00549922v1

Intégration hétérogène de systèmes communicants CMOS-SOI en gamme millimétrique

Justine Philippe , Aurélien Lecavelier , Francois Danneville , Daniel Gloria , Emmanuel Dubois
17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès hal-01020278v1

Comparative study of laterally asymmetric channel and conventional MOSFETs

R. Rengel , M.J. Martin , Francois Danneville
7th Spanish Conference on Electron Devices, CDE 09, 2009, Spain. pp.96-99, ⟨10.1109/SCED.2009.4800439⟩
Communication dans un congrès hal-00474096v1

Temperature noise model for FET mixers

Francois Danneville , B. Tamen , Gilles Dambrine , A. Cappy
UNSOLVED PROBLEMS OF NOISE AND FLUCTUATIONS: UPoN'99: Second International Conference, Jul 1999, Adelaide, Australia. pp.541-546
Communication dans un congrès hal-00157898v1

Noise modeling in fully depleted SOI MOSFETs

G. Pailloncy , B. Iniguez , Gilles Dambrine , J.P. Raskin , Francois Danneville
Solid-State Electronics, 2004, 48, pp.813-825
Article dans une revue hal-00133880v1

Caractérisation et extraction du schéma équivalent petit signal en bande G de transistor bipolaire à hétérojonction SiGe:C de dernière génération et montrant des performances fT/fmax=300/400 GHz

Marina Deng , Thomas Quémerais , Daniel Gloria , Pascal Chevalier , Sylvie Lepilliet , et al.
18èmes Journées Nationales Microondes, JNM 2013, May 2013, Paris, France. papier J2-DA-P11, 4 p
Communication dans un congrès hal-01402473v1

On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

R. Rengel , M.J. Martin , G. Pailloncy , Gilles Dambrine , Francois Danneville
2005, pp.745-748
Communication dans un congrès hal-00125309v1

Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs

G. Larrieu , Emmanuel Dubois , R. Valentin , N. Breil , Francois Danneville , et al.
IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩
Communication dans un congrès hal-00284387v1

Low frequency noise into phase noise in FETs

Francois Danneville
IEEE MTT-S International Microwave Symposium, Workshop on : Device Low Frequency Noise and Phase Noise of Microwave Circuits : How Good a Connection ?, 2003, Philadelphia, PA, United States
Communication dans un congrès hal-00146039v1

Microscopic analysis of the high-frequency noise behaviour of fully-depleted silicon-on-insulator MOSFETs

R. Rengel , J. Mateos , D. Pardo , T. Gonzales , M.J. Martin , et al.
2003, pp.585-588
Communication dans un congrès hal-00145998v1

A 40 GHz single-ended down-conversion mixer in 0.13 µm SiGeC BiCMOS HBT

S. Pruvost , I. Telliez , Francois Danneville , Gilles Dambrine , N. Rolland , et al.
IEEE Microwave and Wireless Components Letters, 2005, 15, pp.496-498
Article dans une revue hal-00124964v1

Bias point optimization for low power/low noise applications of advanced SiGe HBT

N. Waldhoff , Francois Danneville , N. Rolland , P. Rolland , K. Aufinger
6th European Microwave Integrated Circuits Conference, EuMIC 2011, 2011, Manchester, United Kingdom. pp.386-389
Communication dans un congrès hal-00799967v1

High-frequency noise performance of 60-nm gate-length FinFETs

J.P. Raskin , G. Pailloncy , D. Lederer , Francois Danneville , Gilles Dambrine , et al.
IEEE Transactions on Electron Devices, 2008, 55, pp.2718-2727. ⟨10.1109/TED.2008.2003097⟩
Article dans une revue hal-00356670v1

Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation

A.S. Roy , C.C. Enz , T.C. Lim , Francois Danneville
IEEE Transactions on Electron Devices, 2008, 55, pp.2268-2272. ⟨10.1109/TED.2008.925935⟩
Article dans une revue hal-00356669v1

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

Marina Deng , Sylvie Lepilliet , Francois Danneville , Gilles Dambrine , Daniel Gloria , et al.
European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference, Oct 2013, Nuremberg, Germany
Communication dans un congrès hal-01402459v1

Extraction des performances AC et bruit HF d'une technologie CMOS 45 nm en gamme mmW

L. Poulain , N. Waldhoff , D. Gloria , Francois Danneville , Gilles Dambrine
17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 162, 6E3, 1-4
Communication dans un congrès hal-00597146v1

High performance GaN on Si transistors up to 40 GHz

F Medjdoub , Malek Zegaoui , B. Grimbert , Y. Tagro , Damien Ducatteau , et al.
36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, May 2012, Porquerolles, France
Communication dans un congrès hal-00797334v1

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

F Medjdoub , Yoann Tagro , Malek Zegaoui , B. Grimbert , Francois Danneville , et al.
IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩
Article dans une revue hal-00786956v1
Image document

A 4-fJ/spike artificial neuron in 65 nm CMOS technology

Ilias Sourikopoulos , Sara Hedayat , Christophe Loyez , Francois Danneville , Virginie Hoel , et al.
Frontiers in Neuroscience, 2017, 11, pp.123. ⟨10.3389/fnins.2017.00123⟩
Article dans une revue hal-03283312v1

High performance CMOS with enhanced property of mechanical flexibility

Emmanuel Dubois , Aurélien Lecavelier Des Etangs-Levallois , Justine Philippe , Sylvie Lepilliet , Francois Danneville , et al.
CMOS Emerging Technologies Research Symposium, 2014, Grenoble, France
Communication dans un congrès hal-00976625v1

On-wafer differential noise figure measurement without couplers on a vector network analyzer

Yogadissen Andee , Alexandre Siligaris , Francois Graux , Francois Danneville
84th ARFTG Microwave Measurement Conference, Dec 2014, Boulder, United States. ⟨10.1109/ARFTG.2014.7013403⟩
Communication dans un congrès hal-03272692v1

Application-oriented performance of RF CMOS technologies on flexible substrates

Justine Philippe , Aurélien Lecavelier , Matthieu Berthomé , J.F. Robillard , Christophe Gaquière , et al.
IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. ⟨10.1109/IEDM.2015.7409707⟩
Communication dans un congrès hal-03272696v1
Image document

Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

Joao Carlos Azevedo Goncalves , Issa Alaji , Daniel Gloria , Sylvie Lepilliet , Francois Danneville , et al.
43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510217⟩
Communication dans un congrès hal-03272698v1

A 283 GHz low power heterodyne receiver with on-chip local oscillator in 65 nm CMOS process

J. Moron Guerra , A. Siligaris , Jean-Francois Lampin , Francois Danneville , P. Vincent
IEEE Radio Frequency Integrated Circuits Symposium, IEEE RFIC 2013, 2013, Seattle, WA, United States. paper RTU1C-3, 301-304, ⟨10.1109/RFIC.2013.6569588⟩
Communication dans un congrès hal-00877841v1

60 GHz UWB transmitter for use in WLAN communication

M. Devulder , N. Deparis , I. Telliez , S. Pruvost , N. Rolland , et al.
International Symposium on Signals, Systems, and Electronics, ISSSE 2007, 2007, Canada. pp.371-374, ⟨10.1109/ISSSE.2007.4294490⟩
Communication dans un congrès hal-00284059v1

Benefits and validation of 4-dummies de-embedding method for characterization of SiGe HBT in G-band

M. Deng , Sylvie Lepilliet , Francois Danneville , Gilles Dambrine , D. Gloria , et al.
8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-1, 388-391
Communication dans un congrès hal-00922492v1

Noise in devices and circuits II – Proceedings of SPIE Vol. 5470

Francois Danneville , F. Bonani , J. Deen , M. Levinshtein
SPIE – The International Society for Optical Engineering, Bellingham, WA, USA, 585 p., 2004
Ouvrages hal-00131720v1

Non-linear modeling of the kink effect in deep sub-micron SOI MOSFET

A. Siligaris , Gilles Dambrine , Francois Danneville
2004, pp.47-50
Communication dans un congrès hal-00133900v1

Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs

M. Emam , M.A. Pavanello , Francois Danneville , D. Vanhoenacker-Janvier , J.P. Raskin
39th European Solid-State Device Research Conference, ESSDERC 2009, 2009, Greece. pp.125-128, ⟨10.1109/ESSDERC.2009.5331397⟩
Communication dans un congrès hal-00474099v1