Recherche - Archive ouverte HAL Accéder directement au contenu

Filtrer vos résultats

39 résultats
Page :
triés par

Nanochannel arrays etched into hexagonal boron nitride meso-membranes by a focused ion beam

 S. Linas , R. Fulcrand , F. Cauwet , B. Poinsot , A. Brioude
RSC Advances, 2015, 5 (61), pp.49231 - 49234. ⟨10.1039/c5ra05325k⟩
Article dans une revue hal-01597127v1

Investigation of 3C-SiC(111) Homoepitaxial Growth by CVD at High Temperature

 Nikoletta Jegenyes , Jean Lorenzzi , Véronique Soulière , Jacques Dazord , François Cauwet , et al.
13th International Conference on Silicon Carbide and Related Materials, Oct 2009, Nürnberg, Germany. pp.127-130, ⟨10.4028/www.scientific.net/MSF.645-648.127⟩
Communication dans un congrès hal-02864840v1

Surface Morphology Evolution after Epitaxial Growth on 4°Off-Axis 4H-SiC Substrate

 Nikoletta Jegenyes , Véronique Soulière , François Cauwet , Gabriel Ferro
14th International Conference on Silicon Carbide and Related Materials, Sep 2011, Cleveland, United States. pp.145-148, ⟨10.4028/www.scientific.net/MSF.717-720.145⟩
Communication dans un congrès hal-02864847v1

p-Doped SiC Growth on Diamond Substrate by VLS Transport

 Arthur Vo Ha , Davy Carole , Mihai Lazar , Dominique Tournier , François Cauwet , et al.
Materials Science Forum, 2013, 740-742, pp.331 - 334. ⟨10.4028/www.scientific.net/MSF.740-742.331⟩
Article dans une revue hal-01627777v1
Image document

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

 Kassem Alassaad , Véronique Soulière , François Cauwet , Hervé Peyre , Davy Carole , et al.
Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩
Article dans une revue hal-01023271v1

Elimination of twin boundaries when growing 3C-SiC heteroepitaxial by vapour-liquid-solid mechanism on patterned 4H-SiC substrate

 Jean Lorenzzi , Nicoletta Jegenyes , Mihai Lazar , Dominique Tournier , Davy Carole , et al.
HeteroSiC & WASMPE 2011, Jun 2011, Tours, France. pp.11-15, ⟨10.4028/www.scientific.net/MSF.711.11⟩
Communication dans un congrès hal-00747669v1

Selective growth of p-doped SiC on diamond substrate by vapor–liquid–solid mechanism from Al–Si liquid phase

 A. Vo-Ha , D. Carole , Mihai Lazar , Dominique Tournier , F. Cauwet , et al.
Diamond and Related Materials, 2013, 35, pp.24-28. ⟨10.1016/j.diamond.2013.03.007⟩
Article dans une revue hal-02863887v1

Growing 3C-SiC heteroepitaxial layers on α-SiC substrate by vapour–liquid–solid mechanism from the Al–Ge–Si ternary system

 Jean Lorenzzi , Gabriel Ferro , François Cauwet , Véronique Soulière , Davy Carole
Journal of Crystal Growth, 2011, 318 (1), pp.397-400. ⟨10.1016/j.jcrysgro.2010.10.174⟩
Article dans une revue hal-02573259v1

p-type SiC growth on diamond substrate by VLS Transport

 Arthur Vo-Ha , Davy Carole , Mihai Lazar , D. Tournier , François Cauwet , et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 2p
Communication dans un congrès hal-04423301v1
Image document

Controlled Macrostepping of Si-Face 4°off 4H-SiC over a Large Area via Liquid Si-Induced Reconstruction

 Yann Jousseaume , François Cauwet , Judith Woerle , Ulrike Grossner , Sofia Aslanidou , et al.
Materials Science Forum, 2023, 1089, pp.9-14. ⟨10.4028/p-5p6o3j⟩
Article dans une revue hal-04235371v1

Investigation of the growth of 3C-SiC on Si by Vapor-Liquid-Solid (VLS) transport

 S. Berckmans , Laurent Auvray , G. Ferro , F. Cauwet , D. Carole , et al.
ECSCRM 2010, Aug 2010, Oslo, Norway. pp.99-102
Communication dans un congrès hal-01116070v1
Image document

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

 K. Alassaad , M. Vivona , V. Soulière , B. Doisneau , F. Cauwet , et al.
ECS Journal of Solid State Science and Technology, 2014, 3 (8), pp.P285 - P292. ⟨10.1149/2.0121408jss⟩
Article dans une revue hal-01615319v1

Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer

 S. Berckmans , Laurent Auvray , Gabriel Ferro , F. Cauwet , V. Souliere , et al.
HeteroSiC–WASMPE, Jun 2011, Tours, France
Communication dans un congrès hal-01116084v1

Ge assisted SiC epitaxial growth by CVD on SiC substrate

 Kassem Alassaad , Véronique Soulière , Beatrice Doisneau , François Cauwet , Hervé Peyre , et al.
15th International Conference on Silicon Carbide and Related Materials, Sep 2013, Miyasaki, Japan. pp.187-192, ⟨10.4028/www.scientific.net/MSF.778-780.187⟩
Communication dans un congrès hal-02025422v1

Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism

 Jean Lorenzzi , Georgios Zoulis , Jianwu Sun , Maya Marinova , Olivier Kim-Hak , et al.
Journal of Crystal Growth, 2010, 312 (23), pp.3443-3450. ⟨10.1016/j.jcrysgro.2010.08.058⟩
Article dans une revue istex hal-00547051v1

Deposition of nanocrystalline translucent h-BN films by chemical vapor deposition at high temperature

 Ghassan Younes , Gabriel Ferro , Maher Soueidan , Arnaud Brioude , Véronique Soulière , et al.
Thin Solid Films, 2012, 520 (7), pp.2424 - 2428. ⟨10.1016/j.tsf.2011.09.082⟩
Article dans une revue hal-01597171v1

Growing p-type 3C-SiC heteroepitaxial layers by Vapour-Liquid-Solid mechanism on 6H-SiC substrate

 J. Lorenzzi , Véronique Soulière , F. Cauwet , D. Carole , G. Ferro
E-MRS Symposium 2010, European Materials Research Society, Oct 2010, Strasbourg, France. pp.11-14, ⟨10.1063/1.3518276⟩
Communication dans un congrès hal-02863903v1

A comprehensive study of SiC growth processes in a VPE reactor

 Thierry Chassagne , Gabriel Ferro , Didier Chaussende , François Cauwet , Yves Monteil , et al.
Thin Solid Films, 2002, 402, pp.83-89
Article dans une revue hal-00187126v1
Image document

Study of the Nucleation of p-doped SiC in Selective Epitaxial Growth using VLS Transport

 Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry Thierry-Jebali , et al.
ECSCRM 2012, Sep 2012, Saint-Pétersbourg, Russia. 4p
Communication dans un congrès hal-04362529v1
Image document

Macrosteps formation on 4H-SiC surfaces via Si melting within a sandwich configuration

 Yann Jousseaume , François Cauwet , Gabriel Ferro
Journal of Crystal Growth, 2022, 593, pp.126783. ⟨10.1016/j.jcrysgro.2022.126783⟩
Article dans une revue hal-03712777v1

Synthesis of Silicon Carbide Nanowires from a mixture of CaCO3 and Si powders.

 Mikhael Bechelany , David Cornu , F. Chassagneux , Samuel Bernard , F. Cauwet , et al.
Ceramics Nanomaterials and Nanotechnologies, 172, pp.149-157, 2006, Ceramic Transactions, 978-1-574-98242-8. ⟨10.1002/9781118408049.ch15⟩
Chapitre d'ouvrage hal-01702716v1
Image document

3C-SiC Heteroepitaxial Layers Grown on Silicon Substrates with Various Orientations

 Gabriel Ferro , Taguhi Yeghoyan , François Cauwet , Stéphane Coindeau , Thierry Encinas , et al.
Materials Science Forum, 1062, pp.23 - 27, 2022, ⟨10.4028/p-aaf11g⟩
N°spécial de revue/special issue hal-03800131v1

Study of the Nucleation of p-Doped SiC in Selective Epitaxial Growth Using VLS Transport

 Davy Carole , Arthur Vo-Ha , Anthony Thomas , Mihai Lazar , Nicolas Thierry-Jebali , et al.
Materials Science Forum, 2013, 740-742, pp.177-180. ⟨10.4028/www.scientific.net/MSF.740-742.177⟩
Article dans une revue hal-00803058v1

Investigation of 3C-SiC lateral growth on 4H-SiC MESAs

 Jean Lorenzzi , Nikoletta Jegenyes , Mihai Lazar , Dominique Tournier , Francois Cauwet , et al.
CSCRM, 2010, Oslo, Norway. pp.111-114, ⟨10.4028/www.scientific.net/MSF.679-680.111⟩
Communication dans un congrès hal-00786369v1

Low Doped 3C-SiC Layers Deposited by the Vapour-Liquid-Solid Mechanism on 6H-SiC Substrates

 Jean Lorenzzi , Georgios Zoulis , Olivier Kim-Hak , Nikoletta Jegenyes , Davy Carole , et al.
13th International Conference on Silicon Carbide and Related Materials 2009, Oct 2009, Nürnberg, Germany. pp.171-174, ⟨10.4028/www.scientific.net/MSF.645-648.171⟩
Communication dans un congrès hal-02864825v1
Image document

Fabrication of BN membranes containing high density of cylindrical pores using an elegant approach

 C. Marichy , V. Salles , X. Jaurand , A. Etiemble , Thierry Douillard , et al.
RSC Advances, 2017, 7 (34), pp.20709 - 20715. ⟨10.1039/c7ra03808a⟩
Article dans une revue hal-01597112v1

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

 Kassem Alassaad , François Cauwet , Davy Carole , Véronique Soulière , Gabriel Ferro
9th European Conference on Silicon Carbide and Related Materials, Sep 2012, Saint Petersburg, Russia. pp.323-326, ⟨10.4028/www.scientific.net/MSF.740-742.323⟩
Communication dans un congrès hal-02864858v1

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

 Véronique Soulière , Kassem Alassaad , François Cauwet , Hervé Peyre , Thomas Kups , et al.
10th European Conference on Silicon Carbide and Related Materials, Sep 2014, Grenoble, France. pp.115-120
Communication dans un congrès hal-02025347v1

Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates

 Jean Lorenzzi , Véronique Soulière , Davy Carole , Nikoletta Jegenyes , Olivier Kim-Hak , et al.
Diamond and Related Materials, 2011, 20 (5-6), pp.808-813. ⟨10.1016/j.diamond.2011.03.037⟩
Article dans une revue hal-02573245v1

3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

 J. Lorenzzi , Mihai Lazar , Dominique Tournier , N. Jegenyes , D. Carole , et al.
Crystal Growth & Design, 2011, 11 (6), pp.2177-2182. ⟨10.1021/cg101487g⟩
Article dans une revue hal-00786365v1
Page :