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Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance
Bilal Hassan
,
Adrien Cutivet
,
Meriem Bouchilaoun
,
Christophe Rodriguez
,
Ali Soltani
,
et al.
Article dans une revue
hal-02273403v1
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Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements
A. Cutivet
,
G. Pavlidis
,
B. Hassan
,
M. Bouchilaoun
,
C. Rodriguez
,
et al.
Article dans une revue
hal-02273386v1
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Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors
Adrien Cutivet
,
Philippe Altuntas
,
N. Defrance
,
Etienne Okada
,
Vanessa Avramovic
,
et al.
Communication dans un congrès
hal-03276915v1
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Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis
Jean-Guy Tartarin
,
Damien Saugnon
,
Bernard Franc
,
H. Maher
,
F. Boone
Communication dans un congrès
hal-02088200v1
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Exploring Ru Compatibility With Al-Ge Eutectic Wafer Bonding
Mark Ferguson
,
Mohamed Najah
,
Frederic Banville
,
Mohamed Boucherit
,
Paul Gond-Charton
,
et al.
Article dans une revue
hal-03823296v1
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Characterization of a Wafer-Level Packaged Au-Ru/AlCu Contact for Micro-Switches
Mohamed Najah
,
Serge Ecoffey
,
Tejinder Singh
,
Mark Ferguson
,
Louis-Philippe Roby
,
et al.
Article dans une revue
hal-03686950v1
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Thermal Impedance Extraction From Electrical Measurements for Double-Ended Gate Transistors
Adrien Cutivet
,
Meriem Bouchilaoun
,
Ahmed Chakroun
,
Christophe Rodriguez
,
Ali Soltani
,
et al.
Article dans une revue
hal-01918126v1
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New constraints on dust emission and UV attenuation of z = 6.5–7.5 galaxies from millimeter observations
D. Schaerer
,
F. Boone
,
M. Zamojski
,
J. Staguhn
,
M. Dessauges-Zavadsky
,
et al.
Article dans une revue
hal-02502611v1
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A Hydrogen Plasma Treatment for Soft and Selective Silicon Nitride Etching
Meriem Bouchilaoun
,
Ali Soltani
,
Ahmed Chakroun
,
Abdelatif Jaouad
,
Maxime Darnon
,
et al.
Article dans une revue
hal-01760514v1
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Scaling of GaN HEMTs Thermal Transient Characteristics
Adrien Cutivet
,
Meriem Bouchilaoun
,
Bilal Hassan
,
Christophe Rodriguez
,
Ali Soltani
,
et al.
The compound semiconductor week (CSW), May 2018, Boston, United States
Communication dans un congrès
hal-02310050v1
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Dielectric characterization of vegetation at L band using an open-ended coaxial probe
Alex Mavrovic
,
Alexandre Roy
,
Alain Royer
,
Bilal Filali
,
François Boone
,
et al.
Geoscientific Instrumentation, Methods and Data Systems Discussions, 2018, 7 (3), pp.195-208. ⟨10.5194/gi-7-195-2018⟩
Article dans une revue
hal-02453560v1
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AlN/SI interfaces properties revealed by broadband characterization of coplanar waveguides
Adrien Cutivet
,
Alain Agboton
,
Philippe Altuntas
,
François Lecourt
,
Marie Lesecq
,
et al.
37th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2013, 2013, Warnemünde, Germany. pp.37-38
Communication dans un congrès
hal-00828412v1
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GaN MMIC Differential Multi-function Chip for Ka-Band Applications
Boris Berthelot
,
Jean-Guy Tartarin
,
Christophe Viallon
,
Remy Leblanc
,
Hassan Maher
,
et al.
Communication dans un congrès
hal-02315126v1
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Large Periphery GaN HEMTs Modeling Using Distributed Gate Resistance
Bilal Hassan
,
Adrien Cutivet
,
Ali Soltani
,
Christophe Rodriguez
,
François Boone
,
et al.
The coumpoud semiconductor week (CSW), May 2018, Boston, United States
Communication dans un congrès
hal-02310052v1
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Characterization and modeling of transient self-heating in GaN HEMTs
Adrien Cutivet
,
Meriem Bouchilaoun
,
Ahmed Chakroun
,
Ali Soltani
,
Abdelatif Jaouad
,
et al.
12th International Conference on Nitride Semiconductors 2017 (ICNS-12), Jul 2017, Strasbourg, France
Communication dans un congrès
hal-02310127v1
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Exploring Ru compatibility with Al-Ge eutectic wafer bonding
Mark Ferguson
,
Mohamed Najah
,
Frederic Banville
,
Mohamed Boucherit
,
Paul Gond-Charton
,
et al.
Article dans une revue
hal-03821775v1
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Ru plasma etching process for thermally stable and low resistivity contacts
Mohamed Najah
,
Mark Ferguson
,
Mohamed Boucherit
,
M Guillemain
,
Jacques Renaud
,
et al.
47th International Conference on Micro and Nano Engineering,, Jun 2021, Torino, Italy
Communication dans un congrès
hal-03686953v1
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Room-Temperature AlGaN/GaN Terahertz Plasmonic Detectors with a Zero-Bias Grating
H. Spisser
,
A. Grimault-Jacquin
,
N. Zerounian
,
A. Aassime
,
L. Cao
,
et al.
Article dans une revue
hal-01918143v1
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Characterization of Dynamic Self-Heating in GaN HEMTs Using Gate Resistance Measurement
Adrien Cutivet
,
Flavien Cozette
,
Meriem Bouchilaoun
,
Ahmed Chakroun
,
Osvaldo Arenas
,
et al.
Article dans une revue
hal-01914376v1
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Caractérisation électrique d'une structure passive en hyperfréquence par mesures et modélisation de lignes CPW
Adrien Cutivet
,
A. Thevenot
,
A. Chakroun
,
N. Defrance
,
H. Maher
,
et al.
17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 4 p
Communication dans un congrès
hal-01020312v1
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Scalable small signal modeling of AlGaN/GaN HEMT based on distributed gate resistance
Bilal Hassan
,
Adrien Cutivet
,
Christophe Rodriguez
,
Flavien Cozette
,
Ali Soltani
,
et al.
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), Nov 2019, Nashville, United States
Communication dans un congrès
hal-02310001v1
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Thermal Transient Extraction for GaN HEMTs by Frequency-Resolved Gate Resistance Thermometry with Sub-100 ns Time Resolution
Adrien Cutivet
,
Meriem Bouchilaoun
,
Bilal Hassan
,
Christophe Rodriguez
,
Ali Soltani
,
et al.
Article dans une revue
hal-02273385v1
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