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Number of documents

3

Francois Bay


Karim Inal   

Journal articles1 document

  • Simon Gousseau, Stéphane Moreau, David Bouchu, Alexis Farcy, Pierre Montmitonnet, et al.. Electromigration-induced failure in operando characterization of 3D interconnects: microstructure influence. Microelectronics Reliability, Elsevier, 2015, 55 (8), pp.1205-1213. ⟨10.1016/j.microrel.2015.05.019⟩. ⟨hal-01166314⟩

Conference papers2 documents

  • Roberto Lacerda de Orio, Simon Gousseau, Stéphane Moreau, Hajdin Ceric, Siegfried Selberherr, et al.. On the material depletion rate due to electromigration in a copper TSV structure . 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW) , IEEE, Oct 2014, S. Lake Tahoe, California, United States. pp.111-114 - ISBN 978-1-4799-7308-8 ⟨10.1109/IIRW.2014.7049523⟩. ⟨hal-01298215⟩
  • Simon Gousseau, Stéphane Moreau, David Bouchu, Alexis Farcy, Pierre Montmitonnet, et al.. First in Operando SEM Observation of Electromigration-Induced Voids in TSV Structures. 39th International Symposium for Testing and Failure Analysis - ISTFA 2013, Nov 2013, San Jose, California, United States. pp.59-68 - ISBN 978-1-62708-022-4. ⟨hal-01052908⟩