High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications
A. Wilk
,
S. Godey
,
P. Gerard
,
C. Chaix
,
F. Mollot
2003, pp.421-424
Communication dans un congrès
hal-00162724v1
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Croissance d'alliages GaInP contraints par épitaxie à jets moléculaires à sources gazeuses
X. Wallart
,
C. Priester
,
D. Deresmes
,
F. Mollot
13ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2000 , 2000, Saint Aygulf, France
Communication dans un congrès
hal-00158441v1
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Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy : similarities and differences with the growth of strained arsenides
X. Wallart
,
D. Deresmes
,
F. Mollot
2000, pp.255-259
Communication dans un congrès
hal-00158443v1
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Fabrication and characterization of laterally coupled lasers
S. Mc Murtry
,
Jean-Pierre Vilcot
,
F. Mollot
,
Didier Decoster
2002, pp.367-374
Communication dans un congrès
hal-00149638v1
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Two-photon absorption in InP substrates in the 1.55 µm range
D. Vignaud
,
Jean-Francois Lampin
,
F. Mollot
Applied Physics Letters , 2004, 85, pp.239
Article dans une revue
hal-00018568v1
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Transducteurs optomillimétriques en filière InP pour réseaux locaux courte portée interfacés au réseau fibre optique
J. Barrette
,
Christophe Dalle
,
Didier Decoster
,
Manuel Fendler
,
Marie-Renée Friscourt
,
et al.
Bilan du programme CNRS-TELECOM , Nov 1999, Paris, France
Communication dans un congrès
hal-04457984v1
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Génération et détection d'impulsions électriques picosecondes à l'aide de patchs de GaAs et d'AlGaAs
L. Desplanque
,
Jean-Francois Lampin
,
F. Mollot
9èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2002 , 2002, Saint-Aygulf, France
Communication dans un congrès
hal-00148673v1
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Multi-4. in production MBE system review for the growth of mixed P-based heterostructures, for optoelectronic applications
A. Wilk
,
S. Godey
,
X. Marcadet
,
P. Gerard
,
F. Mollot
,
et al.
2005, pp.495-498
Communication dans un congrès
hal-00154908v1
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High Q InP-based varactor diodes
T. David
,
P. Mounaix
,
X. Melique
,
F. Mollot
,
O. Vanbésien
,
et al.
Proceedings of the 11th International Symposium on Space Terahertz Technology , 2000, Ann Arbor, MI, United States
Communication dans un congrès
hal-00158223v1
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High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz
Alexandre Beck
,
Guillaume Ducournau
,
Mohammed Zaknoune
,
Emilien Peytavit
,
Tahsin Akalin
,
et al.
Article dans une revue
hal-00356950v1
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High Performance Heterostructure Barrier Varactors
Didier Lippens
,
Xavier Mélique
,
S. Arscott
,
Thibaut David
,
V. Duez
,
et al.
MILES R.E., HARRISON P., LIPPENS D.
Terahertz Sources and Systems , Springer Netherlands, pp.53-67, 2001, 978-94-010-0824-2.
⟨10.1007/978-94-010-0824-2_4⟩
Chapitre d'ouvrage
istex
hal-02348008v1
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Thermally detected optical absorption, reflectance and photoreflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy
Pierre Disseix
,
C. Payen
,
Joël Leymarie
,
Aime Vasson
,
F. Mollot
Journal of Applied Physics , 2000, 88, pp.4612-4618
Article dans une revue
hal-00158440v1
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Analysis of right- and left-handed dispersive transmission lines at terahertz frequencies
Jean-Francois Lampin
,
T. Crepin
,
M. Perrin
,
M. Ternisien
,
L. Desplanque
,
et al.
2004, pp.101-102
Communication dans un congrès
hal-00140722v1
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Experimental study of hot-electron inelastic scattering rate in p-type InGaAs
D. Sicault
,
R. Teissier
,
F. Pardo
,
J.L. Pelouard
,
F. Mollot
Physical Review B: Condensed Matter and Materials Physics (1998-2015) , 2002, 65, 12, pp.121301
Article dans une revue
hal-00018482v1
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Thermally detected optical absorption, reflectance and photo-reflectance of In(As,P)/InP quantum wells grown by gas source molecular beam epitaxy
Pierre Disseix
,
C. Payen
,
Joël Leymarie
,
Aime Vasson
,
F. Mollot
European Materials Society Spring Meeting, Symposium G, Optoelectronics I: Materials and Technologies for Optoelectronic Devices , 2001, France. pp.197-200
Communication dans un congrès
hal-00250402v1
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-low temperature GaAs/GaInP FET: device technology and characterization
Didier Theron
,
B. Boudart
,
Mohamed Zaknoune
,
Francis Mollot
,
Y. Druelle
,
et al.
Workshop on non-stoichiometric GaAs and related materials , 1996, Santa Barbara, United States
Communication dans un congrès
hal-01654286v1
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FOLDED AND UNFOLDED ACOUSTIC MODES IN LONG-PERIOD GaAs-AlAs SUPERLATTICES. A COMBINED RAMAN-BRILLOUIN STUDY
J. He
,
J. Sapriel
,
J. Chavignon
,
R. Azoulay
,
L. Dugrand
,
et al.
Article dans une revue
istex
jpa-00226708v1
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Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications
Yvon Cordier
,
Mohammed Zaknoune
,
S. Bollaert
,
Mustafa Boudrissa
,
E. Lefebvre
,
et al.
20ème Séminaire National sur l'Epitaxie par Jets Moléculaires, EJM 2001 , 2001, St Aygulf, France
Communication dans un congrès
hal-00152677v1
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Optical switch using InP optical wire technology
Marie Lesecq
,
Maxime Beaugeois
,
Sophie Maricot
,
Christophe Boyaval
,
Christiane Legrand
,
et al.
Photonic Materials, Devices and Applications II , May 2007, Maspalomas, Spain. pp.659305-1-11,
⟨10.1117/12.721659⟩
Communication dans un congrès
hal-00284394v1
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Interplay between segregation, roughness and local strains in the growth of Ga0.75In0.25P alloy
X. Wallart
,
C. Priester
,
D. Deresmes
,
F. Mollot
Applied Physics Letters , 2000, 77, pp.253-255
Article dans une revue
hal-00158232v1
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High In content pseudomorphic InGaAs layers for high mobility heterostructures on InP(001)
X. Wallart
,
B. Pinsard
,
F. Mollot
Journal of Crystal Growth , 2005, 278, pp.516-520
Article dans une revue
hal-00125354v1
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Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study
D. Vignaud
,
F. Mollot
Proceedings of the 11th International Conference on Molecular Beam Epitaxy, MBE XI , 2000, Beijing, China
Communication dans un congrès
hal-00158221v1
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Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP(001) by gas source molecular beam epitaxy
X. Wallart
,
D. Deresmes
,
F. Mollot
Applied Physics Letters , 2001, 78, pp.2961-2963
Article dans une revue
hal-00152078v1
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Mesures de champs électriques ultra-rapides dans les semiconducteurs
L. Desplanque
,
Jean-Francois Lampin
,
F. Mollot
Vèmes Journées des Phénomènes Ultra-Rapides , 2001, Col de Porte, France
Communication dans un congrès
hal-00152091v1
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Determination of carrier-induced optical index and loss variations in GaInAsP/InP heterostructures from static and dynamic Mach-Zehnder interferometer measurements
Malek Zegaoui
,
Joseph Harari
,
Jean-Pierre Vilcot
,
F. Mollot
,
Didier Decoster
,
et al.
Article dans une revue
hal-00141174v1
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Frequency difference generation in the terahertz region using LTG-GaAs photodetector
Emilien Peytavit
,
Gaël Mouret
,
Jean-Francois Lampin
,
Pascal Masselin
,
P. Mounaix
,
et al.
8th International Conference on Terahertz Electronics , Sep 2000, Darmstadt, Germany
Communication dans un congrès
hal-00158220v1
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Growth of strained Ga1-x Inx P layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides
X. Wallart
,
D. Deresmes
,
F. Mollot
Article dans une revue
hal-00152087v1
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THz study of liquids using an integrated bragg filter
Jean-Francois Lampin
,
L. Desplanque
,
M. Ternisien
,
T. Crepin
,
C. Walloth
,
et al.
2004, pp.469-470
Communication dans un congrès
hal-00140721v1
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Two-photon absorption in InP substrates in the 1.55 µm range
D. Vignaud
,
Jean-Francois Lampin
,
F. Mollot
2004, pp.134-137
Communication dans un congrès
hal-00140715v1
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Composition effect on the growth mode, strain relaxation and critical thickness of tensile Ga1-xInxP layers
X. Wallart
,
O. Schuler
,
D. Deresmes
,
F. Mollot
Applied Physics Letters , 2000, 76, pp.2080-2082
Article dans une revue
hal-00158231v1
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