Documentation
Français (FR)

Anglais (EN)

FC

Francis CALMON

11

Documents

Présentation

Publications

48418

	An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration Tulio Chaves de Albuquerque , Dylan Issartel , Shaochen Gao , Younes Benhammou , Dominique Golanski Semiconductor Science and Technology, 2021, ⟨10.1088/1361-6641/ac00d0⟩ Article dans une revue hal-03255595v1
	An Ultrafast Active Quenching Active Reset Circuit with 50 % SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Enagnon Aguenounon , Dylan Issartel , Jean-Baptiste Schell Sensors, 2021, ⟨10.3390/s21124014⟩ Article dans une revue hal-03254577v1
	Indirect Avalanche Event Detection of Single Photon Avalanche Diode Implemented in CMOS FDSOI Technology Tulio Chaves de Albuquerque , Dylan Issartel , Raphaël Clerc , Patrick Pittet , Rémy Cellier Solid-State Electronics, 2020, pp.107636. ⟨10.1016/j.sse.2019.107636⟩ Article dans une revue hal-02294857v1

	Improving the Photon Detection Probability of SPAD implemented in FD-SOI CMOS Technology with light-trapping concept S. Gao , D. Issartel , Régis Orobtchouk , Fabien Mandorlo , D. Golanski 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560684⟩ Communication dans un congrès hal-03622066v1
	Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology D. Issartel , S. Gao , S. Hagen , P. Pittet , R. Cellier 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560679⟩ Communication dans un congrès hal-03622067v1
	An Active Quenching Circuit for a Native 3D SPAD Pixel in a 28 nm CMOS FDSOI Technology Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Wilfried Uhring , Francis Calmon , Dylan Issartel IEEE NEWCAS 2021, 2021, En ligne, France. ⟨10.1109/NEWCAS50681.2021.9462754⟩ Communication dans un congrès hal-03238121v1
	SPAD FDSOI cell optimization for lower dark count rate achievement D. Issartel , T. Chaves de Albuquerque , R. Clerc , P. Pittet , R. Cellier 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-5, ⟨10.1109/EUROSOI-ULIS49407.2020.9365292⟩ Communication dans un congrès hal-03254726v1
	An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Wilfried Uhring , Jean-Baptiste Schell , Calmon F. 2020 IEEE SENSORS, Oct 2020, Rotterdam, Netherlands. pp.1-4, ⟨10.1109/SENSORS47125.2020.9278902⟩ Communication dans un congrès hal-03254822v1
	Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology T. Chaves de Albuquerque , D. Issartel , R. Clerc , P. Pittet , R. Cellier EUROSOI ULIS 2019, Apr 2019, Grenoble, France. ⟨10.1109/EUROSOI-ULIS45800.2019.9041916⟩ Communication dans un congrès hal-02333580v1
	Body-biasing considerations with SPAD FDSOI: advantages and drawbacks T. Chaves de Albuquerque , D. Issartel , R. Clerc , P. Pittet , R. Cellier ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Sep 2019, Cracow, Poland. pp.210-213, ⟨10.1109/essderc.2019.8901825⟩ Communication dans un congrès hal-02379994v1
	Integration of SPAD in 28nm FDSOI CMOS technology T. Chaves de Albuquerque , F. Calmon , R. Clerc , P. Pittet , Y. Benhammou ESSDERC, 2018, Dresden, Germany. ⟨10.1109/ESSDERC.2018.8486852⟩ Communication dans un congrès hal-01958249v1