Francis CALMON

Documents

Présentation

Publications

	An Ultrafast Active Quenching Active Reset Circuit with 50 % SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Enagnon Aguenounon , Dylan Issartel , Jean-Baptiste Schell Sensors, 2021, ⟨10.3390/s21124014⟩ Article dans une revue hal-03254577v1
	An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration Tulio Chaves de Albuquerque , Dylan Issartel , Shaochen Gao , Younes Benhammou , Dominique Golanski Semiconductor Science and Technology, 2021, ⟨10.1088/1361-6641/ac00d0⟩ Article dans une revue hal-03255595v1
	Indirect Avalanche Event Detection of Single Photon Avalanche Diode Implemented in CMOS FDSOI Technology Tulio Chaves de Albuquerque , Dylan Issartel , Raphaël Clerc , Patrick Pittet , Rémy Cellier Solid-State Electronics, 2020, pp.107636. ⟨10.1016/j.sse.2019.107636⟩ Article dans une revue hal-02294857v1
	A High-Efficiency Compact Planar Antenna for ISM Wireless Systems Tao Zhou , Yazi Cao , Zhiqun Cheng , Martine Le Berre , Francis Calmon International Journal of Antennas and Propagation, 2017, 2017, pp.1 - 5. ⟨10.1155/2017/7319275⟩ Article dans une revue hal-01888316v1
	Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology M.M. Vignetti , F. Calmon , P. Lesieur , A. Savoy-Navarro Solid-State Electronics, 2017, 128, pp.163 - 171. ⟨10.1016/j.sse.2016.10.014⟩ Article dans une revue hal-01885619v1
	Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition Daniel Thomas , Etienne Puyoo , Martine Le Berre , Liviu Militaru , Siddardha Koneti Nanotechnology, 2017, 28 (45), 455602 (8 p.). ⟨10.1088/1361-6528/aa8b5e⟩ Article dans une revue hal-01644827v1
	Electrothermal Modeling for 3-D Nanoscale Circuit Substrates: Noise Yue Ma , Latifa Fakri-Bouchet , Francis Calmon , Christian Gontrand IEEE Transactions on Components and Packaging Technologies, 2016, 6 (7), pp.1042-1052. ⟨10.1109/TCPMT.2016.2575363⟩ Article dans une revue hal-01701400v1
	Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies M.M. Vignetti , F. Calmon , R. Cellier , P. Pittet , L. Quiquerez Microelectronics Journal, 2015, 46 (10), pp.900 - 910. ⟨10.1016/j.mejo.2015.07.002⟩ Article dans une revue hal-01886644v1
	Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET Inga Zbierska , Liviu Militaru , Françis Calmon , Sylvain Feruglio , Guo-Neng Lu Microelectronics Journal, 2015, 46 (7), pp.588-592. ⟨10.1016/j.mejo.2015.03.018⟩ Article dans une revue hal-01488981v1
	Tunnel junction engineering for optimized Metallic Single Electron Transistor K. El Hajjam , Mohamed-Amine Bounouar , Nicolas Baboux , S. Ecoffey , M. Guilmain IEEE Transactions on Electron Devices, 2015, 62 (9), pp.2298-3003. ⟨10.1109/TED.2015.2452575⟩ Article dans une revue hal-01489315v1
	An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration Jean-Etienne Lorival , Francis Calmon , Fengyuan Sun , Felipe Frantz , Carole Plossu Microelectronics Journal, 2015, 46 (2), pp.153-165. ⟨10.1016/j.mejo.2014.12.002⟩ Article dans une revue hal-02060679v1
	Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx /Ti junctions N. Guillaume , E. Puyoo , M. Le Berre , D. Albertini , N. Baboux Journal of Applied Physics, 2015, 118 (14), pp.144502. ⟨10.1063/1.4932646⟩ Article dans une revue hal-02048470v1
	Miniaturized Tunable TeraHertz Antenna Based on Graphene Tao Zhou , Z. Cheng , H. Zhang , M. Le Berre , Liviu Militaru Microwave and Optical Technology Letters, 2015, 56 (8), pp. 1792-1794 Article dans une revue hal-01489440v1
	Preliminary simulation study of a Coincidence Avalanche Pixel Sensor Matteo Vignetti , Francis Calmon , Rémy Cellier , Patrick Pittet , Laurent Quiquerez Journal of Instrumentation, 2015, 10, pp.C06007. ⟨10.1088/1748-0221/10/06/C06007⟩ Article dans une revue hal-01489375v1
	Through silicon vias: from a physical point of view to a compact models initiation Fengyuan Sun , Jean-Etienne Lorival , Francis Calmon , Christian Gontrand The International Journal for Computation and Mathematics in Electrical and Elec, 2014, 33, pp.1462-1484 Article dans une revue hal-01489936v1
	3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radiofrequency circuits Christian Gontrand , Fengyuan Sun , R. Cardenas , P. Ma , Carole Plossu Microelectronics Journal, 2014, 45, pp.1061-1068 Article dans une revue hal-01490330v1
	Highly transparent low capacitance PEALD Al2O3-HfO2 tunnel junction engineering K. El Hajjam , Nicolas Baboux , Francis Calmon , Abdelkader Souifi , O. Poncelet Journal of Vacuum Science and Technology, 2014, 32, pp.01A132 Article dans une revue hal-01490344v1
	Enhanced tunable nonreciprocal effect in CRLH coplanar transmission line on YIG without series capacitive loading Tao Zhou , Martine Le Berre , Gwenaelle Vest , Calmon F. , Farid Boukchiche Microwave and Optical Technology Letters, 2013, ⟨10.1002/mop.27979⟩ Article dans une revue hal-03327975v1
	"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking" E. Eid , T. Lacrevaz , C. Bermond , S. de Rivaz , S. Capraro Microelectronic Engineering, 2011, 88 (5), pp.729-733 Article dans une revue hal-01068838v1
	Coplanar waveguides with or without barium ferrite thin films T. Zhou , M. Le Berre , Evangéline Bènevent , A.-S. Dehlinger , F. Calmon Microwave and Optical Technology Letters, 2010, 52 (9), pp.2007-2010. ⟨10.1002/mop.25393⟩ Article dans une revue ujm-00733387v1
	Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri , R. Clerc , F. Calmon , M.G. Pala , A. Poncet physica status solidi (c), 2009, 6 (6), pp.1408-1411 Article dans une revue hal-00596139v1
	Interdigitated back contact solar cells with SiO2 and SiN back surface passivation I. Jozwik , P. Papet , A. Kaminski , E. Fourmond , F. Calmon Journal of Non-Crystalline Solids, 2008, 354 (35-39), pp.4341-4344. ⟨10.1016/j.jnoncrysol.2008.06.083⟩ Article dans une revue hal-02328336v1
	FPGA and mixed FPGA-DSP implementations of electrical drive algorithms F. Calmon , M. Fathallah , Pierre-Jean Viverge , C. Gontrand , J. Carrabina Lecture Notes in Computer Science, 2002, 2438, pp.1144-1147 Article dans une revue hal-00141474v1
	Numerical and Analytical Investigations on IGBTs Thermal Behaviour F. Calmon , J.-P. Chante , A. Sénès , B. Reymond Journal de Physique III, 1997, 7 (3), pp.689-705. ⟨10.1051/jp3:1997149⟩ Article dans une revue jpa-00249607v1

	Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver Bastien Béchadergue , Thibauld Cazimajou , Fabien Mandorlo , Calmon F. 2023 IEEE Wireless Communications and Networking Conference (WCNC), Mar 2023, Glasgow, United Kingdom. pp.1-6, ⟨10.1109/WCNC55385.2023.10118956⟩ Communication dans un congrès hal-04145642v1
	Identification of stress factors and degradation mechanisms inducing DCR drift in SPADs Mathieu Sicre , Xavier Federspiel , David Roy , Bastien Mamby , Caroline Coutier 2022 IEEE International Integrated Reliability Workshop (IIRW), Oct 2022, South Lake Tahoe, United States. pp.1-5, ⟨10.1109/IIRW56459.2022.10032759⟩ Communication dans un congrès hal-04138806v1
	Statistical measurements and Monte-Carlo simulations of DCR in SPADs Mathieu Sicre , Megan Agnew , Christel Buj , Caroline Coutier , Dominique Golanski ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC), Sep 2022, Milan, Italy. pp.193-196, ⟨10.1109/ESSCIRC55480.2022.9911519⟩ Communication dans un congrès hal-04138798v1
	An Active Quenching Circuit for a Native 3D SPAD Pixel in a 28 nm CMOS FDSOI Technology Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Wilfried Uhring , Francis Calmon , Dylan Issartel IEEE NEWCAS 2021, 2021, En ligne, France. ⟨10.1109/NEWCAS50681.2021.9462754⟩ Communication dans un congrès hal-03238121v1
	Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology D. Issartel , S. Gao , S. Hagen , P. Pittet , R. Cellier 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560679⟩ Communication dans un congrès hal-03622067v1
	Dark Count Rate in Single-Photon Avalanche Diodes: characterization and modeling study M. Sicre , M. Agnew , C. Buj , J. Coignus , D. Golanski ESSCIRC / ESSDERC 2021 - IEEE 47th European Solid State Circuits Conference, Sep 2021, Grenoble, France. pp.143-146, ⟨10.1109/ESSCIRC53450.2021.9567806⟩ Communication dans un congrès hal-03622065v1
	Improving the Photon Detection Probability of SPAD implemented in FD-SOI CMOS Technology with light-trapping concept S. Gao , D. Issartel , Régis Orobtchouk , Fabien Mandorlo , D. Golanski 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS), Sep 2021, Caen, France. ⟨10.1109/EuroSOI-ULIS53016.2021.9560684⟩ Communication dans un congrès hal-03622066v1
	An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology Mohammadreza Dolatpoor Lakeh , Jean-Baptiste Kammerer , Wilfried Uhring , Jean-Baptiste Schell , Calmon F. 2020 IEEE SENSORS, Oct 2020, Rotterdam, Netherlands. pp.1-4, ⟨10.1109/SENSORS47125.2020.9278902⟩ Communication dans un congrès hal-03254822v1
	SPAD FDSOI cell optimization for lower dark count rate achievement D. Issartel , T. Chaves de Albuquerque , R. Clerc , P. Pittet , R. Cellier 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Sep 2020, Caen, France. pp.1-5, ⟨10.1109/EUROSOI-ULIS49407.2020.9365292⟩ Communication dans un congrès hal-03254726v1
	Body-biasing considerations with SPAD FDSOI: advantages and drawbacks T. Chaves de Albuquerque , D. Issartel , R. Clerc , P. Pittet , R. Cellier ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), Sep 2019, Cracow, Poland. pp.210-213, ⟨10.1109/essderc.2019.8901825⟩ Communication dans un congrès hal-02379994v1
	Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology T. Chaves de Albuquerque , D. Issartel , R. Clerc , P. Pittet , R. Cellier EUROSOI ULIS 2019, Apr 2019, Grenoble, France. ⟨10.1109/EUROSOI-ULIS45800.2019.9041916⟩ Communication dans un congrès hal-02333580v1
	Integration of SPAD in 28nm FDSOI CMOS technology T. Chaves de Albuquerque , F. Calmon , R. Clerc , P. Pittet , Y. Benhammou ESSDERC, 2018, Dresden, Germany. ⟨10.1109/ESSDERC.2018.8486852⟩ Communication dans un congrès hal-01958249v1
	PEALD Platinum Nano-island SET Fabrication and Electrical Characterization Daniel Thomas , Etienne Puyoo , M. Le Berre , Liviu Militaru , S. Koneti AVS 17th International Conference on Atomic Layer Deposition, Jan 2017, Denver, United States Communication dans un congrès hal-01701467v1
	Pt nanoislands embedded in Al2O3 matrix: from ALD-based fabrication to structural to electrical characterization Daniel Thomas , Etienne Puyoo , Martine Le Berre , Liviu Militaru , S. Koneti EMRS Spring Meeting, Jan 2017, Strasbourg, France Communication dans un congrès hal-01701466v1
	A novel 3D pixel concept for Geiger-mode detection in SOI technology Matteo Vignetti , Francis Calmon , P. Lesieur , T. Graziosi , A. Savoy-Navarro Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria Communication dans un congrès hal-01489132v1
	Shadow Edge Lithography coupled with ALD growth of Alumina and Platinum Nanoislands Towards the Fabrication of Single Electron Transistors Daniel Thomas , Etienne Puyoo , M. Le Berre , Liviu Militaru , S. Koneti EMRS Fall Meeting, 2016, Warsaw, Poland Communication dans un congrès hal-01489069v1
	On the irreversible transformation of Ti/TiOx/Ti junctions under electrical stress Etienne Puyoo , Nicolas Guillaume , M. Le Berre , David Albertini , Nicolas Baboux Energy Materials and Nanotechnology, 2016, Prague, Czech Republic Communication dans un congrès hal-01489096v1
	Enhancing electrical performances of Metallic DG-SET based circuits by Tunnel junction engineering K. El Hajjam , Mohamed-Amine Bounouar , D. Drouin , Francis Calmon Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2016, Vienna, Austria Communication dans un congrès hal-01489101v1
	Development of a 3D silicon coincidence avalanche detector for charged particle tracking in medical applications M. Vignetti , F. Calmon , P. Pittet , G. Pares , R. Cellier 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), Oct 2016, Strasbourg, France. ⟨10.1109/NSSMIC.2016.8069553⟩ Communication dans un congrès hal-01886637v1
	Novel 3D SPAD architecture in an advanced FDSOI technology Francis Calmon , Matteo Vignetti 8th International Workshop on Intelligent Fast Interconnected and Efficient Devices for Frontier Exploitation in Research and Industry (INFIERI), 2016, FermiLab, USA, United States Communication dans un congrès hal-01489097v1
	A time-integration based quenching circuit for Geiger-mode avalanche diodes M. Vignetti , F. Calmon , R. Cellier , P. Pittet , L. Quiquerez 2015 IEEE 13th International New Circuits and Systems Conference (NEWCAS), Jun 2015, Grenoble, France. ⟨10.1109/NEWCAS.2015.7182007⟩ Communication dans un congrès hal-01886653v1
	Electrical modeling of 3D interconnects: a set of tools under development Francis Calmon , Christian Gontrand Fourth International Workshop on Intelligent Fast Interconnected and Efficient Devices for Frontier Exploitation in Research and Industry, 2014, Madrid, Spain Communication dans un congrès hal-01490294v1
	Investigation of Electrical Characteristics of Multi-Gate Bulk nMOSFET Inga Jolanta Zbierska , L. Militaru , F. Calmon , Sylvain Feruglio , Guo-Neng Lu 29th International Conference on Microelectronics - MIEL 2014, May 2014, Belgrade, Serbia. pp.95 - 98, ⟨10.1109/MIEL.2014.6842094⟩ Communication dans un congrès hal-01201800v1
	Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes Nicolas Guillaume , Etienne Puyoo , Martine Le Berre , David Albertini , Nicolas Baboux 17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, 2014, Lille, France Communication dans un congrès hal-01489838v1
	Towards Nano-Computing Blocks Using Room Temperature Double-Gate Single Electron Transistors Mohamed-Amine Bounouar , D. Drouin , Francis Calmon 12th IEEE International New Circuits and Systems Conference (NEWCAS 2014), 2014, Trois-Rivières, Canada Communication dans un congrès hal-01489822v1
	Experimental Study of a Bulk-Technology Tri-gates nMOSFET Inga Zbierska , Liviu Militaru , Françis Calmon , Sylvain Feruglio , Guo-Neng Lu Colloque du GDR Systemes materiels-logiciels integres, Jun 2013, Lyon, France Communication dans un congrès hal-01217536v1
	Nano fabrication of oxide patterns using Atomic Force Microscopy on titanium towards the development of Nano devices Guillaume Nicolas , Etienne Puyoo , Martine Le Berre , David Albertini , Nicolas Baboux ICQNM (Seventh International Conference on Quantum, Nano and Micro Technologies), Aug 2013, Barcelone, Spain Communication dans un congrès hal-02074965v1
	3D Integration of CMOS Image Sensor with Coprocessor Using TSV last and Micro-Bumps Technologies P. Coudrain , Dominique Henry , A. Berthelot , J. Charbonnier , S. Verrun IEEE 63rd Electronic Components and Technology Conf., May 2013, Las Vegas, United States. pp.674-682 Communication dans un congrès hal-01018405v1
	"Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC." E. Eid , T. Lacrevaz , G. Houzet , C. Bermond , B. Fléchet IEEE 62nd Electronic Components and Technology Conf.,, May 2012, San Diego, United States Communication dans un congrès hal-01062188v1
	On the use of nanoelectronic logic cells based on metallic Single Electron Transistors Mohamed Amine Bounouar , Arnaud Beaumont , Francis Calmon , Dominique A Drouin 2012 13th International Conference on Ultimate Integration on Silicon (ULIS), Mar 2012, Grenoble, France. pp.157-160, ⟨10.1109/ULIS.2012.6193381⟩ Communication dans un congrès hal-02374490v1
	Room temperature double gate single electron transistor based standard cell library Mohamed Amine Bounouar , Arnaud Beaumont , Khalil El Hajjam , Francis Calmon , Dominique A Drouin 2012 IEEE/ACM International Symposium on Nanoscale Architectures, Jul 2012, Amsterdam, France. pp.146-151, ⟨10.1145/2765491.2765518⟩ Communication dans un congrès hal-02074668v1
	" Caractérisation des couplages électriques RF par les substrats de silicium en intégration 3D de circuits " E. Eid , T. Lacrevaz , C. Bermond , S. Capraro , A. Farcy JNM'11, May 2011, Brest, France Communication dans un congrès hal-01073528v1
	Modélisation RLCG de lignes coplanaires sur un substrat Silicium pour applications CMOS O. Valorge , F. Calmon , M. Le Berre , C. Gontrand , E. Eid 15e Compatibilité Electromagnétique CEM 2010, Apr 2010, Limoges, France Communication dans un congrès hal-00604508v1
	"Characterization and Modeling of RF Substrate Coupling Effects due to Vertical Interconnects in 3D Integrated Circuit Stacking " E. Eid , T. Lacrevaz , C. Bermond , S. de Rivaz , S. Capraro IEEE Signal Propagation on Interconnects,, May 2010, Hidelsheim, Germany Communication dans un congrès hal-00604327v1
	Frequency and Time Domain Characterization of Substrate Coupling Effects in 3D Integration Stack E. Eid , T. Lacrevaz , C. Bermond , S. Capraro , J. Roullard IEEE Int. Electronics Manufacturing Technology Conf.,, Dec 2010, Melaka, Malaysia Communication dans un congrès hal-00604338v1
	" Effets de couplage RF par les substrats de silicium dans les empilements de circuits intégrés 3D " E. Eid , T. Lacrevaz , C. Bermond , S. de Rivaz , S. Capraro 11e Journées Caractérisation Microondes et Matériaux, Apr 2010, Brest, France Communication dans un congrès hal-00604503v1
	"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking" E. Eid , T. Lacrevaz , C. Bermond , S. de Rivaz , S. Capraro Materials for Advanced Metallization, Mar 2010, Mechelen, Belgium Communication dans un congrès hal-00604323v1
	“Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking” Materials for Advanced Metallization, March 7-10, 2010, Mechelen, Belgium. Eid E. , Lacrevaz T. , Bermond C. , Rivaz S. De , Capraro S. Materials for Advanced Metallization, Mechelen, Belgium., Mar 2010, Mechelen, Belgium Communication dans un congrès hal-01074511v1
	Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking E. Eid , T. Lacrevaz , S. de Rivaz , C. Bermond , B. Fléchet Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking, Sep 2009, San Francisco, United States Communication dans un congrès hal-00602866v1
	Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes E. Buccafurri , A. Medjahdi , F. Calmon , R. Clerc , M. Pala European Solid-State Device Research Conference, Sep 2009, Athènes, Greece. pp.237-241 Communication dans un congrès hal-00603719v1
	Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet Int. Conference on Ultimate Integration of Silicon, Aachen, Mar 2009, Germany. pp.91-94 Communication dans un congrès hal-00604239v1
	Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes E. Buccafurri , R. Clerc , F. Calmon , M. Pala , A. Poncet ISCS 2008, The International Symposium on Compound Semiconductors, Sep 2008, Grenoble, France Communication dans un congrès hal-00391921v1

	3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for Hadrontherapy and Proton Tomography : Preliminary Results on Charged Particle Detection M. Vignetti , F. Calmon , P. Pittet , G. Pares , R. Cellier Forum de la Recherche en Cancérologie Auvergne-Rhône-Alpes 2017, Apr 2017, Lyon, France Poster de conférence hal-01504838v1
	ALD growth of Platinum Nanoislands on Alumina for Single Electron Transistors Applications Daniel Thomas , Etienne Puyoo , Martine Le Berre , Liviu Militaru , S. Koneti ALD growth of Platinum Nanoislands on Alumina for Single Electron Transistors Applications, 2016, Paris, France. 2016 Poster de conférence hal-01489072v1
	Shadow Edge Evaporation for Single Electron Transistors Daniel Thomas , Etienne Puyoo , Martine Le Berre , Liviu Militaru , David Albertini Shadow Edge Evaporation for Single Electron Transistors, 2015, Lyon, France. 2015 Poster de conférence hal-01489632v1
	On the behavior of electrically stressed Ti/TiOx/Ti junctions fabricated by local anodic oxidation Nicolas Guillaume , Etienne Puyoo , M. Le Berre , David Albertini , Nicolas Baboux On the behavior of electrically stressed Ti/TiOx/Ti junctions fabricated by local anodic oxidation, 2015, Lille, France. 2015 Poster de conférence hal-01489627v1
	Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes Nicolas Guillaume , Etienne Puyoo , Martine Le Berre , David Albertini , Nicolas Baboux Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, May 2014, Lille, France Poster de conférence hal-02075131v1
	Elaboration by AFM lithography of nanostructured Ti/TiOx/Ti tunnel junction Nicolas Guillaume , Etienne Puyoo , David Albertini , Nicolas Baboux , Martine Le Berre Euromat 2013 (European Congress & Exhibition on Advanced Materials and Processes), Sep 2013, Seville, Spain Poster de conférence hal-02075164v1
	Comparison of two conductive AFM probes for the local nano-oxidation of Ti thin films Nicolas Guillaume , Etienne Puyoo , David Albertini , Nicolas Baboux , Martine Le Berre Journées Nationales sur les Technologies Emergentes en micro-nanofabrication, May 2013, Evian, France Poster de conférence hal-02075206v1
	Use of Atomic Force Microscopy towards the Development of Nano Devices by Fabricating Oxide Patterns on Titanium thin Film Nicolas Guillaume , Etienne Puyoo , David Albertini , Nicolas Baboux , Martine Le Berre First French-German Summer School on Noncontact Atomic Force Microscopy, Oct 2013, Porquerolles, France Poster de conférence hal-02075144v1
	Oxydation par AFM de fines couches métalliques pour la réalisation de composants mono-électroniques Nicolas Guillaume , Etienne Puyoo , Martine Le Berre , David Albertini , Nicolas Baboux Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, Jun 2013, Grenoble, France Poster de conférence hal-02075185v1

	Mixed-Signal IC Design addressed to Substrate Noise Immunity in Bulk Silicon ; towards 3D circuits Olivier Valorge , Fengyuan Sun , Jean-Etienne Lorival , Francis Calmon , Christian Gontrand CRC Press, Germany. Mixed-Signal IC Design addressed to Substrate Noise Immunity in Bulk Silicon ; towards 3D circuits, VALORGE, SUN, LORIVAL, CALMON, GONTRAND, 2015 Chapitre d'ouvrage hal-01489586v1

Francis CALMON

Présentation

Publications

An Ultrafast Active Quenching Active Reset Circuit with 50 % SPAD Afterpulsing Reduction in a 28 nm FD-SOI CMOS Technology Using Body Biasing Technique

An analytical solution for McIntyre’s model of avalanche triggering probability for SPAD compact modeling and performance exploration

Indirect Avalanche Event Detection of Single Photon Avalanche Diode Implemented in CMOS FDSOI Technology

A High-Efficiency Compact Planar Antenna for ISM Wireless Systems

Simulation study of a novel 3D SPAD pixel in an advanced FD-SOI technology

Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

Electrothermal Modeling for 3-D Nanoscale Circuit Substrates: Noise

Design guidelines for the integration of Geiger-mode avalanche diodes in standard CMOS technologies

Electrical characterization and TCAD simulations of multi-gate bulk nMOSFET

Tunnel junction engineering for optimized Metallic Single Electron Transistor

An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration

Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx /Ti junctions

Miniaturized Tunable TeraHertz Antenna Based on Graphene

Preliminary simulation study of a Coincidence Avalanche Pixel Sensor

Through silicon vias: from a physical point of view to a compact models initiation

3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radiofrequency circuits

Highly transparent low capacitance PEALD Al2O3-HfO2 tunnel junction engineering

Enhanced tunable nonreciprocal effect in CRLH coplanar transmission line on YIG without series capacitive loading

"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking"

Coplanar waveguides with or without barium ferrite thin films

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

Interdigitated back contact solar cells with SiO2 and SiN back surface passivation

FPGA and mixed FPGA-DSP implementations of electrical drive algorithms

Numerical and Analytical Investigations on IGBTs Thermal Behaviour

Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver

Identification of stress factors and degradation mechanisms inducing DCR drift in SPADs

Statistical measurements and Monte-Carlo simulations of DCR in SPADs

An Active Quenching Circuit for a Native 3D SPAD Pixel in a 28 nm CMOS FDSOI Technology

Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology

Dark Count Rate in Single-Photon Avalanche Diodes: characterization and modeling study

Improving the Photon Detection Probability of SPAD implemented in FD-SOI CMOS Technology with light-trapping concept

An Ultrafast Active Quenching Circuit for SPAD in CMOS 28nm FDSOI Technology

SPAD FDSOI cell optimization for lower dark count rate achievement

Body-biasing considerations with SPAD FDSOI: advantages and drawbacks

Lowering the Dark Count Rate of SPAD Implemented in CMOS FDSOI Technology

Integration of SPAD in 28nm FDSOI CMOS technology

PEALD Platinum Nano-island SET Fabrication and Electrical Characterization

Pt nanoislands embedded in Al2O3 matrix: from ALD-based fabrication to structural to electrical characterization

A novel 3D pixel concept for Geiger-mode detection in SOI technology

Shadow Edge Lithography coupled with ALD growth of Alumina and Platinum Nanoislands Towards the Fabrication of Single Electron Transistors

On the irreversible transformation of Ti/TiOx/Ti junctions under electrical stress

Enhancing electrical performances of Metallic DG-SET based circuits by Tunnel junction engineering

Development of a 3D silicon coincidence avalanche detector for charged particle tracking in medical applications

Novel 3D SPAD architecture in an advanced FDSOI technology

A time-integration based quenching circuit for Geiger-mode avalanche diodes

Electrical modeling of 3D interconnects: a set of tools under development

Investigation of Electrical Characteristics of Multi-Gate Bulk nMOSFET

Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes

Towards Nano-Computing Blocks Using Room Temperature Double-Gate Single Electron Transistors

Experimental Study of a Bulk-Technology Tri-gates nMOSFET

Nano fabrication of oxide patterns using Atomic Force Microscopy on titanium towards the development of Nano devices

3D Integration of CMOS Image Sensor with Coprocessor Using TSV last and Micro-Bumps Technologies

"Effects of silicon substrate coupling phenomena on signal integrity for RF or high speed communications in 3D-IC."

On the use of nanoelectronic logic cells based on metallic Single Electron Transistors

Room temperature double gate single electron transistor based standard cell library

" Caractérisation des couplages électriques RF par les substrats de silicium en intégration 3D de circuits "

Modélisation RLCG de lignes coplanaires sur un substrat Silicium pour applications CMOS

"Characterization and Modeling of RF Substrate Coupling Effects due to Vertical Interconnects in 3D Integrated Circuit Stacking "

Frequency and Time Domain Characterization of Substrate Coupling Effects in 3D Integration Stack

" Effets de couplage RF par les substrats de silicium dans les empilements de circuits intégrés 3D "

"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking"

“Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking” Materials for Advanced Metallization, March 7-10, 2010, Mechelen, Belgium.

Predictive High Frequency Effects of Substrate Coupling in 3D Integrated Circuits Stacking

Challenges and Prospects of RF Oscillators Using Silicon Resonant Tunneling Diodes

Intrinsic Cut Off Frequency of Si and GaAs Based Resonant Tunneling Diodes

Performances Comparison of Si and GaAs Based Resonant Tunneling Diodes

3D Silicon Coincidence Avalanche Detector (3D-SiCAD) for Hadrontherapy and Proton Tomography : Preliminary Results on Charged Particle Detection

ALD growth of Platinum Nanoislands on Alumina for Single Electron Transistors Applications

Shadow Edge Evaporation for Single Electron Transistors

On the behavior of electrically stressed Ti/TiOx/Ti junctions fabricated by local anodic oxidation

Oxydation locale d’une couche de titane par AFM pour la réalisation de composants mono-électroniques : étude paramétrée de différents modes de types de pointes

Elaboration by AFM lithography of nanostructured Ti/TiOx/Ti tunnel junction

Comparison of two conductive AFM probes for the local nano-oxidation of Ti thin films

Use of Atomic Force Microscopy towards the Development of Nano Devices by Fabricating Oxide Patterns on Titanium thin Film

Oxydation par AFM de fines couches métalliques pour la réalisation de composants mono-électroniques

Mixed-Signal IC Design addressed to Substrate Noise Immunity in Bulk Silicon ; towards 3D circuits