Florence Azais
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Impact of process variations on the detectability of resistive short defects: Comparative analysis between 28nm Bulk and FDSOI technologiesLATS 2018 - 19th IEEE Latin American Test Symposium, Mar 2018, Sao Paulo, Brazil. ⟨10.1109/LATW.2018.8349696⟩
Communication dans un congrès
lirmm-02064921v1
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Detection of resistive open and short defects in FDSOI under delay-based test: Optimal VDD and body biasing conditionsETS: European Test Symposium, May 2017, Limassol, Cyprus. ⟨10.1109/ETS.2017.7968208⟩
Communication dans un congrès
hal-01709615v1
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Comprehensive Study for Detection of Weak Resistive Open and Short Defects in FDSOI TechnologyISVLSI: International Symposium on Very Large Scale Integration, Jul 2017, Bochum, Germany. pp.320-325, ⟨10.1109/ISVLSI.2017.63⟩
Communication dans un congrès
hal-01709614v1
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Comparative study of Bulk, FDSOI and FinFET technologies in presence of a resistive short defectLATS: Latin-American Test Symposium, Mar 2016, Foz do Iguacu, Brazil. pp.129-134, ⟨10.1109/LATW.2016.7483352⟩
Communication dans un congrès
lirmm-01374300v1
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Impact of VT and Body-Biasing on Resistive short detection in 28nm UTBB FDSOI – LVT and RVT configurationsISVLSI: International Symposium on Very Large Scale Integration, Jul 2016, Pittsburgh, PA, United States. pp.164-169, ⟨10.1109/ISVLSI.2016.102⟩
Communication dans un congrès
lirmm-01374292v1
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Influence of Gate Oxide Short Defects on the Stability of Minimal Sized SRAM Core-Cell by Applying Non-Split ModelsDTIS: Design and Technology of Integrated Systems in Nanoscale Era, 2009, Cairo, Egypt. pp.225-229
Communication dans un congrès
lirmm-00370798v1
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GOSMOS: A Gate Oxide Short Defect Embedded in a MOS Compact ModelLATW: Latin American Test Workshop, Feb 2003, Natal, Brazil
Communication dans un congrès
lirmm-00269604v1
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Delay Testing of MOS Transistor with Gate Oxide ShortATS: Asian Test Symposium, Nov 2003, Xian, China. pp.168-173
Communication dans un congrès
lirmm-00269641v1
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A Non-Split Model for Realistic Gate Oxide Short in CMOS TechnologyDCIS: Design of Circuits and Integrated Systems, 2002, Santander, Spain. pp.197-204
Communication dans un congrès
lirmm-00268432v1
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Non-Linear and Non-Split Transistor MOS Model for Gate Oxyde ShortDBT: Defect Based Testing, Apr 2002, Monterey, CA, United States. pp.11-16
Communication dans un congrès
lirmm-00269333v1
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Low Voltage Testing of Gate Oxide Short in CMOS TechnologyDDECS: Design and Diagnostics of Electronic Circuits and Systems, 2002, Brno, Czech Republic. pp.168-174
Communication dans un congrès
lirmm-00268526v1
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Modeling Gate Oxide Short Defects in CMOS Minimum TransistorsETW: European Test Workshop, 2002, Corfu, Greece. pp.15-20
Communication dans un congrès
lirmm-00268527v1
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Boolean and Current Detection of MOS Transistor with Gate Oxide ShortIEEE International Test Conference, Oct 2001, Baltimore, USA, pp.10
Communication dans un congrès
lirmm-00370400v1
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A Compact Model for Electrical Simulation of MOS Transistor with Gate Oxide Short Defect[Research Report] 04080, Lirmm, University of Montpellier. 2004
Rapport
lirmm-00109221v1
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