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Atom probe tomography for advanced metallization

D. Mangelinck , F. Panciera , K. Hoummada , M. El Kousseifi , C. Perrin , et al.
Microelectronic Engineering, 2014, 120, pp.19-33. ⟨10.1016/j.mee.2013.12.018⟩
Article dans une revue hal-02385332v1
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Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime

Frank Glas , Federico Panciera , Jean-Christophe Harmand
physica status solidi (RRL) - Rapid Research Letters, 2022, 16 (5), pp.2100647. ⟨10.1002/pssr.202100647⟩
Article dans une revue hal-04261852v1

Growth Dynamics of Ga Nanodroplets on 2D Substrate

Zhaslan Baraissov , Federico Panciera , Jean-Christophe Harmand , Gilles Patriarche , Utkur Mirsaidov
Microscopy and Microanalysis, 2018, 24 (S1), pp.264-265. ⟨10.1017/S1431927618001812⟩
Article dans une revue hal-02377882v1
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Molecular Beam Epitaxy of Germanium in the Atomic-Resolution Transmission Electron Microscope

Eric Ngo , Federico Panciera , Jean-Christophe Harmand , Weixi Wang , Martin Foldyna , et al.
Microscopy and Microanalysis, 2019, Proceedings of CISCEM 2018 - the 4th Conference on In-Situ and Correlative Electron Microscopy, 25 (S1), pp.47-48. ⟨10.1017/S1431927618015969⟩
Article dans une revue hal-02349101v1
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Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusion

Zhaslan Baraissov , Federico Panciera , Laurent Travers , Jean-Christophe Harmand , Utkur Mirsaidov
Journal of Physical Chemistry Letters, 2019, 10 (17), pp.5082-5089. ⟨10.1021/acs.jpclett.9b01563⟩
Article dans une revue hal-02401188v1
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Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks

Zahi Essa , Clement Gaumer , Ardechir Pakfar , Mickael Gros-Jean , Marc Juhel , et al.
Applied Physics Letters, 2012, 101 (18), pp.182901. ⟨10.1063/1.4764558⟩
Article dans une revue hal-01921905v1
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End-of-range defects in germanium and their role in boron deactivation

F. Panciera , P F Fazzini , M. Collet , J. Boucher , Eléna Bedel-Pereira , et al.
Applied Physics Letters, 2010, 97 (1), pp.012105. ⟨10.1063/1.3456537⟩
Article dans une revue hal-01922899v1

Progress in the understanding of Ni silicide formation for advanced MOS structures

Dominique Mangelinck , K. Hoummada , F. Panciera , M. El Kousseifi , I. Blum , et al.
physica status solidi (a), 2014, 211 (1), pp.152-165. ⟨10.1002/pssa.201300167⟩
Article dans une revue istex hal-01951259v1
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Surface Crystallization of Liquid Au-Si and Its Impact on Catalysis

Federico Panciera , Jerry Tersoff , Andrew D Gamalski , Mark C Reuter , Dmitri Zakharov , et al.
Advanced Materials, 2019, 31 (5), pp.1806544. ⟨10.1002/adma.201806544⟩
Article dans une revue hal-02403349v1
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Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Victor Zatko , Simon Mutien-Marie Dubois , Florian Godel , Cécile Carrétéro , Anke Sander , et al.
ACS Nano, 2021, 15, pp.7279. ⟨10.1021/acsnano.1c00544⟩
Article dans une revue hal-03196467v1
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Nucleation and lateral growth kinetics of the NiSi phase at the epitaxial θ-Ni2Si/Si interface

Mike El Kousseifi , Khalid Hoummada , Federico Panciera , Christian Lavoie , Dominique Mangelinck
Acta Materialia, 2020, 198, pp.100-110. ⟨10.1016/j.actamat.2020.07.062⟩
Article dans une revue hal-02923017v1
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Phase Selection in Self-catalyzed GaAs Nanowires

Federico Panciera , Zhaslan Baraissov , Gilles Patriarche , Vladimir G Dubrovskii , Frank Glas , et al.
Nano Letters, 2020, 20, pp.1669 - 1675. ⟨10.1021/acs.nanolett.9b04808⟩
Article dans une revue hal-03048367v1
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In situ TEM modification of individual silicon nanowires and their charge transport mechanisms

Sardar B Alam , Christopher R Andersen , Federico Panciera , Aage a S Nilausen , Ole Hansen , et al.
Nanotechnology, 2020, 31 (49), pp.494002. ⟨10.1088/1361-6528/ababc8⟩
Article dans une revue hal-03048412v1
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Selective Wet Etching of Silicon Germanium in Composite Vertical Nanowires

Zhaslan Baraissov , Antoine Pacco , Siddardha Koneti , Geeta Bisht , Federico Panciera , et al.
ACS Applied Materials & Interfaces, 2019, 11 (40), pp.36839-36846. ⟨10.1021/acsami.9b11934⟩
Article dans une revue hal-02404924v1

Epitaxy of hexagonal Ge-2H : growth regimes and related I3 defects

Laetitia Vincent , Charles Renard , J. Fraunié , T Dursap , Laurent Travers , et al.
FAME : First International Workshop on Fundamentals and Advances of MOVPE processes, Jul 2023, Cork, Ireland
Communication dans un congrès hal-04261830v1
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Lateral growth of NiSi at the θ-Ni2Si/Si(100) interface: Experiments and modelling

Dominique Mangelinck , M. El Kousseifi , K. Hoummada , F. Panciera , T. Epicier
Microelectronic Engineering, 2018, 199, pp.45-51. ⟨10.1016/j.mee.2018.07.014⟩
Article dans une revue hal-01916302v1
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Modeling the dynamics of interface morphology and crystal phase change in self-catalyzed GaAs nanowires

D Wilson , A Sokolovskii , R Lapierre , F Panciera , F Glas , et al.
Nanotechnology, 2020, 31 (48), pp.485602. ⟨10.1088/1361-6528/abb106⟩
Article dans une revue hal-03048435v1
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Observations of the synthesis of straight single wall carbon nanotubes directed by electric fields in an Environmental Transmission Electron Microscope

Pascal Vincent , Federico Panciera , Ileana Florea , Nicholas Blanchard , Costel Sorin Cojocaru , et al.
Carbon, In press, pp.118272. ⟨10.1016/j.carbon.2023.118272⟩
Article dans une revue hal-04161302v1

Atomic Step Flow on a Nanofacet

Jean-Christophe Harmand , Gilles Patriarche , Frank Glas , Federico Panciera , Ileana Florea , et al.
Physical Review Letters, 2018, 121 (16), ⟨10.1103/PhysRevLett.121.166101⟩
Article dans une revue hal-02349114v1
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Growth‐Related Formation Mechanism of I3‐Type Basal Stacking Fault in Epitaxially Grown Hexagonal Ge‐2H

Laetitia Vincent , Elham Fadaly , Charles Renard , Wouter Peeters , Marco Vettori , et al.
Advanced Materials Interfaces, 2022, 9 (16), pp.2102340. ⟨10.1002/admi.202102340⟩
Article dans une revue hal-03775620v1
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Real-time thermal decomposition kinetics of GaAs nanowires and their crystal polytypes on the atomic scale

Paul Schmiedeke , Federico Panciera , J.-C. Harmand , Laurent Travers , Gregor Koblmüller
Nanoscale Advances, In press, ⟨10.1039/d3na00135k⟩
Article dans une revue hal-04097669v1

Ni silicide nanowires analysis by atom probe tomography

M. El Kousseifi , F. Panciera , K. Hoummada , M. Descoins , T. Baron , et al.
Microelectronic Engineering, 2014, 120, pp.47-51. ⟨10.1016/j.mee.2013.12.011⟩
Article dans une revue hal-01991913v1