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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

 Matteo Meneghini , Geok Ing Ng , Farid Medjdoub , Matteo Buffolo , Shireen Warnock , et al.
IEEE Transactions on Electron Devices, 71 (3), pp.1340-1343, 2024, ⟨10.1109/TED.2024.3359934⟩
N°spécial de revue/special issue hal-04493325v1

Temperature dependent contact and channel sheet resistance extraction of GaN HEMT.

 A.K. Sahoo , N.K. Subramani , Jean-Christophe Nallatamby , N. Rolland , Raymond Quéré , et al.
INMMIC, Oct 2015, Taormina, Italy
Communication dans un congrès hal-01285706v1

Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements

 N. K. Subramani , A. K. Sahoo , Jean-Christophe Nallatamby , R. Sommet , N. Rolland , et al.
IEEE Transactions on Microwave Theory and Techniques, 2016, 64 (5), pp.1351-1358. ⟨10.1109/TMTT.2016.2549528⟩
Article dans une revue hal-01394908v1

High polarization high breakdown voltage AlN/GaN-on-silicon transistors

 Nicolas Herbecq , Isabelle Roch-Jeune , F Medjdoub
38th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2014, 2014, Delphi, Greece. 2 p
Communication dans un congrès hal-01006455v1

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

 F Medjdoub , Malek Zegaoui , Damien Ducatteau , N. Rolland , Paul-Alain Rolland
69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩
Communication dans un congrès hal-00799973v1
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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-on-SiC HEMTs by Means of a Thin AlGaN Back Barrier

 Kathia Harrouche , Srisaran Venkatachalam , Lyes Ben-Hammou , François Grandpierron , Etienne Okada , et al.
Micromachines, 2023, 14 (2), pp.291. ⟨10.3390/mi14020291⟩
Article dans une revue hal-03952213v1

[Webinar] Towards high performance mm-wave GaN power transistors

 F Medjdoub
pCoE - GaN Research and Development (GRAND) Webinar Series, Indian Institute of technology Madras, Apr 2022, Online, India
Communication dans un congrès hal-03637279v1

Beyond 100 GHz AlN/GaN HEMTs on silicon substrate

 F Medjdoub , Malek Zegaoui , N. Rolland
Electronics Letters, 2011, 47 (24), pp.1345-1346. ⟨10.1049/el.2011.3166⟩
Article dans une revue hal-00783379v1

GaN-on-Silicon transistors with extremely low off-state leakage current above 3 kilovolts

 Ezgi Dogmus , Malek Zegaoui , F Medjdoub
TWHM 2017(12th Topical Workshop on Heterostructure Microelectronics), Aug 2017, Kirishima, Japan
Communication dans un congrès hal-03298882v1
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Surface capping of AlInN/GaN HEMT structures

 F Medjdoub , D. Ducatteau , Christophe Gaquière , J.-F Carlin , M Gonschorek , et al.
European Workshop on III-Nitride Semiconductor Materials and Devices, Sep 2006, Heraklion, Greece
Communication dans un congrès hal-03281380v1

Transistors à base de semi-conducteurs III-N sur substrat de silicium et applications

 F Medjdoub
Techniques de l'Ingénieur, TI Sciences et Techniques, Paris, France, dossier IN146, 14 p., 2012
Chapitre d'ouvrage hal-00798938v1
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Optimized ohmic contacts for InAlGaN/GaN HEMTs

 Pierre Ruterana , Marie Pierre Chauvat , Magali Morales , Farid Medjdoub , Piero Gamarra , et al.
ASDAM 2022 - 14th International Conference on Advanced Semiconductor Devices and Microsystems, Oct 2022, Smolenice, Slovakia. pp.1-8, ⟨10.1109/ASDAM55965.2022.9966781⟩
Communication dans un congrès hal-03930667v1
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ABOVE 2 A/mm DRAIN CURRENT DENSITY OF GaN HEMTS GROWN ON SAPPHIRE

 F Medjdoub , J.-F. Carlin , M. Gonschorek , E. Feltin , M. A Py , et al.
International Journal of High Speed Electronics and Systems, 2011, 17 (01), pp.91-95. ⟨10.1142/S012915640700428X⟩
Article dans une revue hal-03281326v1
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High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

 Kathia Harrouche , Riad Kabouche , Etienne Okada , F Medjdoub
IEEE/MTT-S International Microwave Symposium (IMS 2020), Aug 2020, Los Angeles, CA, United States. Session Tu3H - Advances in Microwave Semiconductor Devices, paper Tu3H-2, 285-288, ⟨10.1109/IMS30576.2020.9223971⟩
Communication dans un congrès hal-03043653v1
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Short-term reliability of high performance Q-band AlN/GaN HEMTs

 R. Kabouche , K. Harrouche , Etienne Okada , F Medjdoub
IEEE International Reliability Physics Symposium (IRPS 2020), Apr 2020, Dallas, TX, United States. pp.1-6, ⟨10.1109/IRPS45951.2020.9129322⟩
Communication dans un congrès hal-03044147v1
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Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs

 Zhan Gao , Matteo Meneghini , Kathia Harrouche , Riad Kabouche , Francesca Chiocchetta , et al.
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Jul 2020, Singapour, Singapore. pp.1-6, ⟨10.1109/IPFA49335.2020.9260793⟩
Communication dans un congrès hal-03043453v1

Low Frequency Noise in In-Situ SiN Passivated InAlGaN/GaN HEMTs

 Mehdi Rzin , Bruno Guillet , Laurence Méchin , Piero Gamarra , Cédric Lacam , et al.
ICNF 2017 (24th International Conference on Noise and Fluctuations), Jun 2017, Vilnius, Lithuania
Communication dans un congrès hal-02523201v1

[Invited] AlGaN Channel HEMTs for High Voltage Applications

 F Medjdoub , Jash Mehta , Idriss Abid , Yvon Cordier , Fabrice Semond
MRS Spring Meeting & Exhibit, MRS 2022 spring meeting, May 2022, Honolulu (Online), United States
Communication dans un congrès hal-03637419v1

High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

 F Medjdoub , Riad Kabouche , Astrid Linge , Bertrand Grimbert , Malek Zegaoui , et al.
Applied Physics Express, 2015, 8 (10), pp.101001. ⟨10.7567/APEX.8.101001⟩
Article dans une revue hal-03028367v1
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High quality drift layer thickness scaling in vertical GaN-on-Silicon PIN diodes

 Youssef Hamdaoui , Idriss Abid , Sondre Michler , Katir Ziouche , F Medjdoub
46th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2023), May 2023, Palerme (Italie), Italy
Communication dans un congrès hal-04438189v1

Process optimization of Fully Vertical GaN-on-Silicon PIN diodes

 Idriss Abid , Youssef Hamdaoui , Sondre Michler , Katir Ziouche , F Medjdoub
14th International Conference on Nitride Semiconductors (ICNS-14), Nov 2023, Nagoya, Japan
Communication dans un congrès hal-04436413v1

Investigation on GaN channel thickness downscaling in high electron mobility transistor structures grown on AlN bulk substrate

 Reda Elwaradi , C. Bougerol , Jash Mehta , Maud Nemoz , F Medjdoub , et al.
WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Communication dans un congrès hal-03681811v1
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The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs

 Georges Pavlidis , Samuel Kim , Idriss Abid , Malek Zegaoui , F Medjdoub , et al.
IEEE Electron Device Letters, 2019, 40 (7), pp.1060-1063. ⟨10.1109/LED.2019.2915984⟩
Article dans une revue hal-02356736v1

Degradation processes and origin in InGaN-based high-power photodetectors

 Carlo de Santi , Matteo Meneghini , Alessandro Caria , Ezgi Dogmus , Malek Zegaoui , et al.
Gallium Nitride Materials and Devices XIII, Jan 2018, San Francisco, United States. pp.54, ⟨10.1117/12.2289466⟩
Communication dans un congrès hal-02356755v1

Diamond-on-GaN Heterostructures Towards a New Class of Extreme Performance Hybrid Devices

 E Kohn , M Dipalo , M Alomari , F Medjdoub , C Pietzka
International Conference on Electronic Materials 2008, Jul 2008, Sydney, Australia
Communication dans un congrès hal-03281261v1

Technological development of THz microfluidic microsystems for biological spectroscopy

 Vianney Mille , Nour Eddine Bourzgui , F Medjdoub , L. Desplanque , Jean-Francois Lampin , et al.
Conference Digest of the 2004 Joint 29th International Conference on 2004 and 12th International Conference on Terahertz Electronics, Sep 2004, Karlsruhe, Germany. pp.549-550, ⟨10.1109/ICIMW.2004.1422207⟩
Communication dans un congrès hal-00162775v1

Characteristics of Al2O3/AllnN/GaN MOSHEMT

 F Medjdoub , N. Sarazin , M. Tordjman , M. Magis , M.A. Di Forte-Poisson , et al.
Electronics Letters, 2007, 43, pp.691-692. ⟨10.1049/el:20070425⟩
Article dans une revue hal-00283495v1

InAlN/GaN MOS-HEMT with thermally grown oxide

 M. Alomari , F Medjdoub , E. Kohn , M.A. Di Forte-Poisson , S. Delage , et al.
International Journal of High Speed Electronics and Systems, 2009, 19, pp.137-144. ⟨10.1142/S0129156409006187⟩
Article dans une revue hal-00473433v1

First reliability demonstration of sub-200 nm AlN/GaN-on-silicon double heterostructure HEMTs for Ka band applications

 G. Meneghesso , M. Meneghini , F Medjdoub , Y. Tagro , B. Grimbert , et al.
IEEE Transactions on Device and Materials Reliability, 2013, 13, pp.480-488. ⟨10.1109/TDMR.2013.2276425⟩
Article dans une revue hal-00913577v1

[Invited] Can we achieve high power GaN-on-Si in the mmW range ?

 F Medjdoub
48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States
Communication dans un congrès hal-00797332v1
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